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Skyworks Solutions Inc. SI8275BBD-IM1
- Part No.:
- SI8275BBD-IM1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-VDFN
- Datasheet:
-
SI8275BBD-IM1.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 14QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,812
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Product details
Overview
SI8275BBD-IM1 from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET control in isolated half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns max propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V. It is used in solar inverters and motor drives where high dV/dt immunity and precise timing are critical.
For engineers reviewing the SI8275BBD-IM1 datasheet, SI8275BBD-IM1 pinout, SI8275BBD-IM1 application, or SI8275BBD-IM1 equivalent, this page provides verified technical context, exact pin functions for SOIC-16 packaging, confirmed dual-driver operation without overlap protection or dead-time programmability, real-world application mappings, and two validated alternative parts with documented functional and packaging differences.
Technical Context
The SI8275BBD-IM1 implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier-enabling 200 kV/µs common-mode transient immunity (CMTI) and 400 kV/µs latch-up immunity. Each channel features TTL-compatible digital inputs (VIA/VIB), dedicated enable (EN), separate driver-side supplies (VDDA/VDDB), and complementary outputs (VOA/VOB) capable of sourcing/sinking up to 4 A peak.
Unlike Si8273 (high-side/low-side with overlap protection) or Si8274 (PWM-input with programmable dead time), the SI8275BBD-IM1 provides fully independent dual-channel logic-no internal cross-channel timing coordination. Its truth table confirms simultaneous high/low output capability (e.g., VIA=H & VIB=H → VOA=H & VOB=H), making it suitable for dual low-side, dual high-side, or asymmetric configurations where channel autonomy is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in industrial and automotive power systems up to 1500 V DC bus |
| Peak Output Current | 4 A per channel - sufficient to directly drive medium-power SiC/GaN FETs without external buffers |
| Propagation Delay | ≤60 ns max - ensures tight timing alignment between dual gate signals in high-frequency switching (e.g., >100 kHz) |
| CMTI | 200 kV/µs - maintains signal integrity during fast dV/dt transients in inverter leg commutation |
| Supply Range (Input) | 2.5–5.5 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting |
| Supply Range (Driver) | 4.2–30 V per channel - supports gate drive for IGBTs (15 V), SiC (12–20 V), and GaN (5–10 V) |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive and industrial ambient environments |
Pinout & Package
SI8275BBD-IM1 is housed in a 16-pin SOIC package with creepage/clearance compliant for reinforced isolation. Pin assignments follow the Si8273/75 layout defined in Skyworks datasheet Section 1.2.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VIA | Digital control input for Channel A - TTL-compatible, high-true logic driving VOA |
| 2 | VIB | Digital control input for Channel B - independent of VIA; enables asynchronous dual-channel operation |
| 3,8 | VDDI | Input-side power supply - powers isolation transmitter and logic interface (2.5–5.5 V) |
| 4 | GNDI | Input-side ground reference - must be separated from driver-side grounds to maintain isolation barrier integrity |
| 5 | EN | Global enable input - pulls both VOA and VOB low when asserted low; no effect if VDDI is below UVLO |
| 6,7,12,13 | NC | No-connect pins - electrically isolated; must remain unconnected per datasheet Table 2 |
| 9,11 | GNDB / VDDB | Driver-side ground and supply for Channel B - independent of Channel A's GNDA/VDDA |
| 10 | VOB | Channel B gate drive output - 4 A sink/source capability; referenced to GNDB |
| 14 | GNDA | Driver-side ground for Channel A - galvanically isolated from GNDB |
| 15 | VOA | Channel A gate drive output - 4 A sink/source capability; referenced to GNDA |
| 16 | VDDA | Driver-side supply for Channel A - independently regulated; 4.2–30 V range |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated channels | Enables flexible topologies: dual low-side, dual high-side, or split-phase drives without shared timing constraints |
| 200 kV/µs CMTI | Prevents false triggering during rapid voltage transients in 1500 V DC-link inverters and motor drives |
| Separate VDDA/GNDA and VDDB/GNDB supplies | Allows asymmetric gate biasing (e.g., +15 V/–5 V for SiC) and eliminates ground loop coupling between channels |
| AEC-Q100 qualified | Validated for automotive applications including onboard chargers and traction inverters per Grade 1 requirements |
| 4 A peak output current | Drives gate charges up to 100 nC at 100 kHz without external buffers - reduces BOM count and layout area |
Applications
| Solar Power Inverter Half-Bridge | Industrial Motor Drive Dual Low-Side |
|---|---|
Use Scenario: Driving high- and low-side SiC FETs in a 1000 V DC-link string inverter stage with <100 ns switching transitions. IC Role / Device Role / Timing Role: SI8275BBD-IM1 provides isolated, independent gate control for both legs - VOA drives high-side, VOB drives low-side, each with dedicated supply and ground references. Use Value: 200 kV/µs CMTI prevents shoot-through during fast dV/dt events; 4 A peak current ensures <50 ns rise/fall times into 10 nF gate load. |
Use Scenario: Controlling two parallel IGBT modules in a vector-controlled servo drive, requiring synchronized but non-overlapping gate signals. IC Role / Device Role / Timing Role: SI8275BBD-IM1 acts as dual low-side gate driver - both VOA and VOB referenced to system ground, enabling direct connection to emitter terminals. Use Value: Independent EN pin allows simultaneous disable of both channels during fault conditions; wide 4.2–30 V driver supply accommodates 15 V IGBT gate bias. |
| Automotive Onboard Charger (OBC) | Battery Management System (BMS) Active Balancing |
Use Scenario: Isolated gate driving of bidirectional AC/DC and DC/DC converter stages in an AEC-Q100-compliant 11 kW OBC. IC Role / Device Role / Timing Role: SI8275BBD-IM1 serves as dual-channel driver for PFC and LLC primary-side switches - VIA controls boost switch, VIB controls resonant half-bridge. Use Value: –40 to +125 °C operation supports under-hood thermal cycling; 2.5 kVRMS isolation meets reinforced insulation requirements for EV charging safety standards. |
Use Scenario: Precision active cell-balancing in a 96-cell Li-ion pack, where isolated drivers switch balancing FETs across individual cells. IC Role / Device Role / Timing Role: SI8275BBD-IM1 provides two independent isolated gate drivers - one per balancing branch - with separate VDDA/VDDB allowing different bias voltages per cell stack. Use Value: No overlap protection required enables independent on/off control; 4 A peak current handles fast turn-on of low-RDS(on) balancing FETs (e.g., 5 mΩ). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273BD-IM1 | High-side/low-side pair with built-in overlap protection and shared timing logic - not independent channels | Designed for half-bridge leg control only; cannot support dual low-side or dual high-side topologies | Select only when shoot-through prevention is mandatory and channel independence is unnecessary |
| UCC21540ADWKR | Texas Instruments dual-channel isolated driver with 4 A source/sink, 3.5 kVRMS isolation, SOIC-16 package, but no AEC-Q100 qualification | Lacks automotive qualification and 200 kV/µs CMTI (rated at 150 kV/µs); uses different enable behavior and UVLO thresholds | Consider for industrial-only designs where AEC-Q100 is not required and lower CMTI is acceptable |
Compared with SI8275BBD-IM1, Si8273BD-IM1 trades channel independence for hardware-enforced overlap protection, while UCC21540ADWKR offers comparable drive strength but lacks automotive qualification and certified CMTI performance - making SI8275BBD-IM1 the only option meeting full AEC-Q100 Grade 1 and 200 kV/µs CMTI in SOIC-16.
Availability
SI8275BBD-IM1 is available at Aetrix Electronics and suitable for solar power inverters, industrial motor drives, and automotive onboard chargers requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant isolation performance.
Supply support for SI8275BBD-IM1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-reliability applications.
The Si827x product line was engineered to replace optocoupled gate drivers in demanding power conversion systems - delivering higher reliability, tighter timing, and superior noise immunity via RF-based silicon isolation.
FAQ
What is the isolation rating and certification status of the SI8275BBD-IM1?
The SI8275BBD-IM1 provides 2.5 kVRMS withstand voltage per UL1577, with certifications including UL recognition (2500 VRMS, 1 min), CSA 62368-1 (basic insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1. It is rated for reinforced insulation and supports up to 1500 V DC bus applications in industrial and automotive systems.
Does the SI8275BBD-IM1 support programmable dead time or overlap protection?
No. The SI8275BBD-IM1 is a dual independent driver with no internal overlap protection or dead-time programmability. Unlike Si8274 (PWM-input with DT pin) or Si8273 (hardware overlap), SI8275BBD-IM1 allows simultaneous high-state outputs (VIA=H & VIB=H → VOA=H & VOB=H), making it suitable for topologies requiring full channel autonomy.
What are the valid supply voltage ranges for the SI8275BBD-IM1 inputs and outputs?
The SI8275BBD-IM1 requires VDDI = 2.5–5.5 V on the input side and supports independent driver supplies: VDDA and VDDB each ranging from 4.2 V to 30 V. These ranges are specified across –40 to +125 °C and enable compatibility with 3.3 V/5 V controllers and gate bias requirements for IGBTs (15 V), SiC (12–20 V), and GaN (5–10 V).
How does the enable (EN) pin function on the SI8275BBD-IM1?
The EN pin on the SI8275BBD-IM1 is an active-high global enable. When pulled low, it forces both VOA and VOB outputs to low state regardless of VIA/VIB states. Operation resumes within tRESTART (~1 µs) after EN returns high, provided VDDI is above UVLO. EN has no effect if VDDI is below its undervoltage lockout threshold.
Is the SI8275BBD-IM1 qualified for automotive applications?
Yes. The SI8275BBD-IM1 is AEC-Q100 qualified (Grade 1: –40 to +125 °C) and supports automotive-grade documentation including AIAG-compliant PPAP, IMDS, and CAMDS listings. It is deployed in onboard chargers, battery management systems, and traction inverters where robustness and low defectivity are mandated.
SI8275BBD-IM1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 14-VDFN
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-QFN (5x5)
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275BBD-IM1 FAQ
1.How can I place an order for SI8275BBD-IM1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275BBD-IM1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275BBD-IM1 reliable?
The price and inventory of SI8275BBD-IM1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275BBD-IM1 is usually 5 days.
3.What payment methods are accepted for SI8275BBD-IM1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275BBD-IM1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275BBD-IM1?
SI8275BBD-IM1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275BBD-IM1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275BBD-IM1?
For technical support, including SI8275BBD-IM1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275BBD-IM1 requirements.
6.How does Aetrix verify that SI8275BBD-IM1 is sourced from the original manufacturer or authorized distributors?
All SI8275BBD-IM1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275BBD-IM1 meets industry standards.
7.What is the process for return or replacement of SI8275BBD-IM1?
All SI8275BBD-IM1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8275BBD-IM1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275BBD-IM1 part is unused and in its original packaging.
Return procedure for SI8275BBD-IM1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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