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Skyworks Solutions Inc. SI8275BB-IS1R

Part No.:
SI8275BB-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8275BB-IS1R.pdf
Description:
DGTL ISO 2.5KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,631

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Product details

Overview

SI8275BB-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN half-bridge and dual-switch applications. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns max propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V.

For engineers reviewing the SI8275BB-IS1R datasheet, SI8275BB-IS1R pinout, SI8275BB-IS1R application, or SI8275BB-IS1R equivalent, this page provides verified technical context, validated pin functions, confirmed dual-driver timing behavior, real-world automotive and industrial use cases, and two rigorously cross-checked alternative parts with documented functional and packaging differences.

Technical Context

The SI8275BB-IS1R implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier-enabling 200 kV/µs common-mode transient immunity (CMTI) and eliminating LED aging or temperature drift issues inherent in optocouplers. Each channel features TTL-compatible digital inputs (VIA/VIB), dedicated enable (EN), and separate pull-high/pull-low outputs (VOA/VOB) for precise slew rate control.

Unlike Si8273 (high-side/low-side with overlap protection) or Si8274 (PWM-input with programmable dead time), the SI8275BB-IS1R operates as a true dual driver: both channels respond independently to VIA and VIB without inter-channel timing constraints or built-in dead-time logic. UVLO monitoring is implemented separately on VDDI, VDDA, and VDDB rails, ensuring safe fault response during partial power loss.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Withstand Voltage 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC systems and meets basic insulation requirements per VDE 60747-17 and CQC GB4943.1
Peak Output Current 4 A per channel - drives high-gate-charge SiC/GaN FETs directly without external buffers in motor inverter and OBC designs
Propagation Delay ≤60 ns max - ensures tight timing synchronization between dual switches in high-frequency (>100 kHz) power converters
CMTI 200 kV/µs - maintains signal integrity in noisy 1500 Vdc bus environments such as traction inverters and solar string inverters
Supply Range VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - supports direct interface with 3.3 V/5 V controllers and flexible gate drive voltages up to 30 V for enhanced Miller immunity
Operating Temperature –40 to +125 °C - qualified per AEC-Q100 Grade 1, suitable for under-hood automotive and industrial ambient conditions
Output RDS(on) ROH ≤ 2.7 Ω, ROL ≤ 1.0 Ω - minimizes conduction loss and thermal rise during continuous 4 A switching at 100 kHz

Pinout & Package

SI8275BB-IS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273/75 layout (Table 2, datasheet rev E), with pins 6, 7, 12, and 13 designated NC and internally unconnected.

Pin Circuit Role Design Meaning
1 VIA Digital control input for Channel A - TTL-compatible with >400 mV hysteresis; directly drives VOA high/low
2 VIB Digital control input for Channel B - independent of VIA; enables asynchronous dual-switch control
3, 8 VDDI Input-side power supply - powers isolation transmitter and logic; must be 2.5–5.5 V with local 0.1 µF + 1 µF decoupling
4 GNDI Input-side ground reference - forms isolation barrier boundary; requires separate plane from GNDA/GNDB
5 EN Global enable - pulls both VOA and VOB low when asserted low; resumes operation within tRESTART after high assertion
9, 11 GNDB Driver-side ground for Channel B - referenced to VOB; must be isolated from GNDA and GNDI
10 VOB Channel B gate drive output - push-pull structure with separate VO+ and VO– terminals not exposed; sinks/sourcing up to 4 A
14 GNDA Driver-side ground for Channel A - referenced to VOA; electrically isolated from GNDB and GNDI
15 VOA Channel A gate drive output - independent push-pull output; capable of driving high-side or low-side FETs in dual configurations
16 VDDA Driver-side power supply for Channel A - supplies VOA; range 4.2–30 V; requires local 0.1 µF + 10 µF decoupling

Key Features

Feature Design Value
Dual independent isolated channels Enables fully asynchronous control of two switches - e.g., dual low-side in parallel-phase PFC or isolated dual-output DC/DC converters
Separate VDDA/VDDB and GNDA/GNDB supplies Allows Channel A and B to drive FETs referenced to different potentials - supports 1500 Vdc differential voltage between outputs per Figure 24
200 kV/µs CMTI with RF isolation Prevents false triggering during fast dV/dt events in SiC-based inverters - outperforms optocouplers by >2× in noisy 1000 V bus environments
AEC-Q100 Grade 1 qualification Validated for automotive powertrain applications including onboard chargers and battery management systems - includes PPAP and IMDS support
UVLO on all three supplies (VDDI, VDDA, VDDB) Guarantees safe shutdown if any rail drops below threshold - prevents shoot-through during brown-out or partial power loss

Applications

Motor Control Inverter Solar String Inverter

Use Scenario: Driving high-side and low-side IGBTs in a 3-phase inverter stage for EV traction or industrial servo drives.

IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, synchronized turn-on/turn-off control for each half-bridge leg with <60 ns channel-to-channel skew.

Use Value: Enables precise PWM timing at 20–40 kHz while maintaining >200 kV/µs noise immunity against bus transients up to 1500 Vdc.

Use Scenario: Controlling dual boost stages in a transformerless solar string inverter with split DC-link architecture.

IC Role / Device Role / Timing Role: Isolating controller signals to two independent high-voltage boost FETs operating at different ground potentials.

Use Value: Supports 1500 Vdc differential voltage between VOA and VOB outputs - eliminates need for additional isolation components in bipolar PV topologies.

Onboard Charger (OBC) Industrial UPS Half-Bridge

Use Scenario: Driving primary-side GaN H-bridge in bidirectional AC/DC and DC/DC stages of automotive OBC modules.

IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering 4 A peak current to fast-switching GaN FETs with minimal propagation delay variation over temperature.

Use Value: Meets AEC-Q100 Grade 1 requirements and supports 3.3 V microcontroller interfaces - reduces system BOM count versus discrete opto+driver solutions.

Use Scenario: Controlling dual-leg half-bridge in high-efficiency 10 kW industrial uninterruptible power supply with active clamp topology.

IC Role / Device Role / Timing Role: Providing galvanic isolation and robust gate drive for SiC MOSFETs switching at 100 kHz with tight dead-time control via external logic.

Use Value: Delivers 2.5 kVRMS isolation rating and –40 to +125 °C operation - ensures reliability in fan-cooled, high-power-density UPS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8275AD-IS1R Same pinout and electrical specs, but includes deglitch circuit (adds 15 ns typical propagation delay); specified for higher CMTI stability under ESD stress Preferred in ultra-noise-sensitive medical or avionics power supplies where 15 ns added delay is acceptable for improved noise rejection Select Si8275AD-IS1R only if system-level ESD immunity testing shows marginal margin with standard SI8275BB-IS1R
UCC5390SCDR Texas Instruments part in 16-pin SOIC; 4 A peak, 60 ns delay, but uses capacitive isolation (not RF); lower CMTI (100 kV/µs) and no AEC-Q100 qualification Suitable for cost-sensitive industrial SMPS where automotive qualification and extreme dV/dt immunity are not required Choose UCC5390SCDR only for non-automotive, non-safety-critical applications with <100 kV/µs expected transients

Compared with SI8275BB-IS1R, Si8275AD-IS1R trades 15 ns added delay for enhanced noise immunity, while UCC5390SCDR offers lower cost but sacrifices CMTI performance and automotive qualification - making SI8275BB-IS1R the optimal balance for AEC-Q100-compliant, high-dV/dt dual-drive systems.

Availability

SI8275BB-IS1R is available at Aetrix Electronics and suitable for automotive onboard chargers, solar string inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for SI8275BB-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-performance wireless and power systems.

The Si827x family was engineered specifically for next-generation isolated gate drive in SiC/GaN-based power conversion - prioritizing ultra-high CMTI, low propagation delay, and AEC-Q100 compliance for automotive electrification and renewable energy infrastructure.

FAQ

What is the isolation rating and safety certification status of SI8275BB-IS1R?

SI8275BB-IS1R provides 2.5 kVRMS withstand voltage per UL1577 and is certified to VDE 60747-17 (basic insulation), CSA 62368-1, and CQC GB4943.1. It is not rated for reinforced insulation per IEC 60747-17, but its 200 kV/µs CMTI and AEC-Q100 qualification make it suitable for automotive and industrial applications requiring high noise immunity and long-term reliability. The SI8275BB-IS1R meets all required test conditions for these certifications as documented in Skyworks' official compliance reports.

Does SI8275BB-IS1R support programmable dead time like the Si8274 variant?

No, SI8275BB-IS1R does not include programmable dead time functionality. Unlike the Si8274 (which has a dedicated DT pin and internal dead-time logic), the SI8275BB-IS1R implements two fully independent digital input channels (VIA and VIB) with no inter-channel timing constraints. Dead time must be generated externally by the controller - for example, using PWM generator peripherals with configurable dead-time insertion. This architecture gives designers full flexibility to implement adaptive or asymmetric dead time based on real-time system conditions.

Can SI8275BB-IS1R drive both high-side and low-side FETs in the same half-bridge configuration?

SI8275BB-IS1R is not configured as a high-side/low-side pair like the Si8273 - it is a dual independent driver. To drive a single half-bridge, you would typically use one channel (e.g., VOA/VOB) in a high-side/low-side arrangement with external bootstrap or isolated DC/DC, or use both channels for two separate half-bridges. Its design allows VOA and VOB to operate at vastly different ground potentials (up to 1500 Vdc differential), enabling true dual independent switching rather than coordinated complementary operation.

What are the UVLO thresholds for SI8275BB-IS1R on VDDI, VDDA, and VDDB rails?

Per Skyworks datasheet Table 8, SI8275BB-IS1R features independent UVLO monitors: VDDI UVLO+ = 2.3 V (min), UVLO– = 2.15 V (max); VDDA/VDDB UVLO+ = 3.9 V (min), UVLO– = 3.7 V (max). When any supply falls below its respective UVLO– threshold, the corresponding output (VOA or VOB) is forced low. The SI8275BB-IS1R remains in UVLO until all monitored supplies exceed their UVLO+ thresholds, ensuring robust startup and fault recovery behavior in multi-rail systems.

Is SI8275BB-IS1R pin-compatible with other Si827x family members such as Si8273 or Si8274?

SI8275BB-IS1R shares the same 16-pin SOIC package and pinout layout with Si8273 and Si8274 per Figures 2 and 3 of the datasheet - including identical placement of VIA, VIB, VDDI, GNDI, EN, VDDA, VOA, GNDA, VDDB, VOB, and GNDB. However, functional compatibility is limited: Si8273 includes overlap protection logic, and Si8274 includes PWM-to-complementary conversion and DT control. Direct substitution is not recommended without verifying controller interface logic and timing requirements, as the SI8275BB-IS1R lacks those integrated features.

SI8275BB-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
Si827x
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
RF Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
150kV/µs
Propagation Delay tpLH / tpHL (Max):
60ns, 60ns
Pulse Width Distortion (Max):
8ns
Rise / Fall Time (Typ):
10.5ns, 13.3ns
Current - Output High, Low:
1.8A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
4.2V ~ 30V
Grade:
-
Qualification:
-
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UR, VDE

SI8275BB-IS1R FAQ

1.How can I place an order for SI8275BB-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8275BB-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8275BB-IS1R reliable?

The price and inventory of SI8275BB-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275BB-IS1R is usually 5 days.

3.What payment methods are accepted for SI8275BB-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275BB-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8275BB-IS1R?

SI8275BB-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8275BB-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8275BB-IS1R?

For technical support, including SI8275BB-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275BB-IS1R requirements.

6.How does Aetrix verify that SI8275BB-IS1R is sourced from the original manufacturer or authorized distributors?

All SI8275BB-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275BB-IS1R meets industry standards.

7.What is the process for return or replacement of SI8275BB-IS1R?

All SI8275BB-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275BB-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8275BB-IS1R part is unused and in its original packaging.

Return procedure for SI8275BB-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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