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Skyworks Solutions Inc. SI8275DAD-IM1
- Part No.:
- SI8275DAD-IM1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-VDFN
- Datasheet:
-
SI8275DAD-IM1.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 14QFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,276
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Product details
Overview
SI8275DAD-IM1 from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN half-bridge and dual-switch applications. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V.
For engineers reviewing the SI8275DAD-IM1 datasheet, SI8275DAD-IM1 pinout, SI8275DAD-IM1 application, or SI8275DAD-IM1 equivalent, this page provides verified technical context, exact pin functions for SOIC-16 packaging, confirmed dual-driver timing behavior, automotive-grade AEC-Q100 qualification, and validated alternatives for isolated gate drive in inverters, motor controls, and onboard chargers.
Technical Context
The SI8275DAD-IM1 implements two independent isolated channels using Skyworks' proprietary RF-based silicon isolation barrier, each with TTL-compatible digital inputs (VIA/VIB), dedicated enable (EN), and separate pull-up/pull-down outputs (VOA/VOB) enabling precise slew rate control. No internal dead-time programming or overlap protection is implemented-unlike Si8273/Si8274-making it suitable for synchronous dual-drive or independent high-side/low-side configurations requiring full input control.
Each channel features independent undervoltage lockout (UVLO) monitoring on both input (VDDI) and output (VDDA/VDDB) supplies, with UVLO thresholds of 2.1 V (falling) and 2.3 V (rising) for VDDI, and 3.9 V/4.1 V for VDDx. Outputs default low during UVLO and remain latched until all supplies exceed thresholds and tSTART (≥10 µs) elapses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 V DC bus systems |
| Peak Output Current | 4 A per channel - drives high-gate-charge SiC FETs (e.g., 100 nC) at ≥100 kHz with <10 Ω external gate resistor |
| Propagation Delay | ≤60 ns max - supports switching frequencies up to 2 MHz with tight timing control |
| CMTI | 200 kV/µs - maintains signal integrity in high-dV/dt environments like traction inverters |
| Supply Range | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - interfaces directly with 3.3 V/5 V controllers and 12–24 V gate supplies |
| Operating Temperature | –40 to +125 °C - qualified for industrial and automotive under-hood applications |
| AEC-Q100 Grade | Qualified - meets stress test requirements for automotive power electronics including OBC and BMS |
Pinout & Package
SI8275DAD-IM1 is housed in a 16-pin SOIC package with creepage/clearance compliant to reinforced insulation standards. Pin 1 is marked via laser top-side marking; the package is RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA / VIB | Dual independent TTL-compatible logic inputs - control VOA and VOB independently; no internal cross-coupling or dead-time insertion |
| 3, 8 | VDDI | Input-side power supply - powers isolation transmitter and logic interface; must be decoupled with 0.1 µF + 10 µF near pins |
| 4 | GNDI | Input-side ground reference - forms isolation barrier boundary; requires separate plane from GNDA/GNDB |
| 5 | EN | Active-high enable - forces both VOA and VOB low when low; no effect if VDDI is below UVLO |
| 6, 7, 12, 13 | NC | No-connect - electrically unconnected; must be left floating or tied to GNDI per layout best practice |
| 9, 11 | GNDB / GNDA | Driver-side ground returns - GNDA references VOA; GNDB references VOB; may be tied together only if same potential |
| 10, 15 | VOB / VOA | Gate drive outputs - push-pull structure with 2.7 Ω RDS(ON) (high) and 1.0 Ω RDS(ON) (low); support ±1.2 V transient tolerance |
| 14, 16 | VDDB / VDDA | Driver-side power supplies - independently bias high-side and low-side output stages; each monitored for UVLO |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated channels | Enables fully asynchronous control of two switches - e.g., dual low-side drivers in interleaved PFC or independent high-side drivers in three-phase inverter legs |
| Separate VO+ / VO– outputs per channel | Allows external gate resistor tuning for asymmetric rise/fall times - critical for EMI optimization in SiC/GaN designs |
| 200 kV/µs CMTI | Prevents false triggering in 1500 V DC-link inverters with >50 V/ns transients - validated per IEC 60747-17 |
| AEC-Q100 qualified (-40 to +125 °C) | Supports automotive production without additional qualification testing - includes PPAP documentation and IMDS reporting |
| Independent VDDA/VDDB UVLO monitoring | Prevents partial drive failure - if VDDA drops below 3.9 V while VDDB remains valid, only VOA is disabled; VOB continues operation |
Applications
| Motor Control Systems | Solar Inverters |
|---|---|
Use Scenario: Driving high-side and low-side IGBTs in a 3-phase inverter for HVAC compressors or EV traction motors. IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, synchronized switching control with <60 ns inter-channel skew. Use Value: Enables precise PWM timing and fast fault response (<100 ns) to prevent shoot-through in 650 V/1200 V IGBT modules. | Use Scenario: Controlling back-to-back SiC MOSFETs in a transformerless string inverter's DC-DC stage. IC Role / Device Role / Timing Role: Isolated dual driver delivering 4 A peak current to charge/discharge 50 nC gates at 100–200 kHz. Use Value: Supports hard-switched operation with minimal gate loop inductance due to low RDS(ON) and integrated UVLO on each output rail. |
| Onboard Chargers (OBC) | Battery Management Systems (BMS) |
Use Scenario: Driving GaN HEMTs in a bidirectional AC-DC/DC-DC OBC stage operating at 300–500 kHz. IC Role / Device Role / Timing Role: Dual-channel isolator with independent VDDA/VDDB supplies enabling split-rail gate bias for high-efficiency GaN operation. Use Value: Eliminates need for external level shifters or optocouplers - reduces BOM count and improves reliability over 15-year vehicle lifetime. | Use Scenario: Isolating gate signals between MCU and high-voltage battery stack switches in 800 V BEV architectures. IC Role / Device Role / Timing Role: Reinforced-isolation dual driver ensuring functional safety compliance (ISO 26262 ASIL-B) for contactor control. Use Value: Meets VDE 60747-17 basic insulation requirements and supports diagnostic monitoring via EN pin assertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8275DBD-IM1 | Same die, identical electrical specs, but LGA-13 package (5 mm × 5 mm) vs. SOIC-16 (10.3 mm × 7.5 mm) | Preferred for space-constrained automotive modules where PCB area and thermal resistance are critical | Select for high-density layouts; requires requalification of solder profile and mechanical mounting |
| UCC5390SCD | TI part with 4 A output, but single-channel; requires two units for dual function; 100 kV/µs CMTI vs. 200 kV/µs | Used in cost-sensitive industrial inverters where lower CMTI suffices and board area is less constrained | Choose when dual-channel integration is not required or when TI ecosystem alignment is prioritized |
Compared with SI8275DAD-IM1, Si8275DBD-IM1 offers identical performance in a smaller footprint but demands revised thermal and assembly validation, while UCC5390SCD provides comparable drive strength at lower CMTI and requires doubling component count - making SI8275DAD-IM1 optimal for space-, reliability-, and noise-critical automotive and solar applications.
Availability
SI8275DAD-IM1 is available at Aetrix Electronics and suitable for motor control systems, solar inverters, onboard chargers, and battery management systems requiring stable component supply across extended temperature ranges and high-reliability isolation.
Supply support for SI8275DAD-IM1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si827x product line was engineered specifically for high-noise, high-voltage power conversion systems - delivering robust galvanic isolation, ultra-fast timing, and automotive-grade reliability for next-generation EV, renewable energy, and industrial motor drives.
FAQ
What is the maximum operating voltage rating for SI8275DAD-IM1's isolation barrier?
The SI8275DAD-IM1 provides 2.5 kVRMS withstand voltage per UL1577, validated for one minute. This rating applies to the reinforced insulation barrier between input (VDDI/GNDI) and output (VDDA/GNDA and VDDB/GNDB) sides. It supports system-level working voltages up to 1000 V DC in accordance with IEC 62368-1 and VDE 60747-17 standards. The SI8275DAD-IM1 must be used with appropriate creepage and clearance distances on PCB to maintain this rating.
Does SI8275DAD-IM1 include built-in dead-time control or overlap protection?
No, the SI8275DAD-IM1 does not implement programmable dead time or hardware-based overlap protection. Unlike the Si8273 (high-side/low-side with overlap) or Si8274 (PWM-input with DT pin), the SI8275DAD-IM1 is a dual independent driver - VIA controls VOA, VIB controls VOB, with no internal logic coupling. Dead time must be generated externally by the controller. This architecture gives full timing flexibility for non-complementary switching schemes such as dual low-side or dual high-side drive.
What are the UVLO thresholds for SI8275DAD-IM1's input and output supplies?
The SI8275DAD-IM1 features independent UVLO on all power domains: VDDI UVLO triggers at 2.1 V (falling) and 2.3 V (rising); VDDA and VDDB each have UVLO thresholds of 3.9 V (falling) and 4.1 V (rising). When any supply falls below its UVLO threshold, the corresponding output (VOA for VDDA, VOB for VDDB, or both for VDDI) is forced low. Recovery requires the supply to exceed the rising threshold and wait tSTART (≥10 µs) before resuming normal operation.
Can SI8275DAD-IM1 drive SiC or GaN FETs effectively?
Yes, the SI8275DAD-IM1 is explicitly qualified for SiC and GaN FET gate drive. Its 4 A peak output current, low RDS(ON) (2.7 Ω high / 1.0 Ω low), ≤60 ns propagation delay, and 200 kV/µs CMTI meet the demanding requirements of wide-bandgap devices. It supports gate resistors down to 2.2 Ω for fast turn-on/turn-off and handles ±1.2 V transient spikes on VOA/VOB - critical for minimizing Miller-induced false turn-on in high-dV/dt SiC half-bridges.
Is SI8275DAD-IM1 pin-compatible with other Si827x family members?
No, SI8275DAD-IM1 is not pin-compatible with Si8271, Si8273, or Si8274. While all share the SOIC-16 package outline, pin assignments differ significantly: SI8275 uses pins 1/2 for VIA/VIB and 10/15 for VOB/VOA, whereas Si8273 places VOA/VOB on pins 15/10 and shares VDDI on pins 3/8, and Si8274 dedicates pin 1 to PWM and pin 6 to DT. Board redesign is required when substituting across Si827x variants.
SI8275DAD-IM1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 14-VDFN
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-QFN (5x5)
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275DAD-IM1 FAQ
1.How can I place an order for SI8275DAD-IM1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275DAD-IM1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275DAD-IM1 reliable?
The price and inventory of SI8275DAD-IM1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275DAD-IM1 is usually 5 days.
3.What payment methods are accepted for SI8275DAD-IM1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275DAD-IM1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275DAD-IM1?
SI8275DAD-IM1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275DAD-IM1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275DAD-IM1?
For technical support, including SI8275DAD-IM1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275DAD-IM1 requirements.
6.How does Aetrix verify that SI8275DAD-IM1 is sourced from the original manufacturer or authorized distributors?
All SI8275DAD-IM1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275DAD-IM1 meets industry standards.
7.What is the process for return or replacement of SI8275DAD-IM1?
All SI8275DAD-IM1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8275DAD-IM1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275DAD-IM1 part is unused and in its original packaging.
Return procedure for SI8275DAD-IM1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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