Skyworks Solutions Inc. SI8275DAD-IM1R
- Part No.:
- SI8275DAD-IM1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-VDFN
- Datasheet:
-
SI8275DAD-IM1R.pdf
- Description:
- DGTL ISO 1KV 2CH GATE DVR 14QFN
- Quantity:
- Payment:

- Shipping:

Inventory:1,565
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Product details
Overview
SI8275DAD-IM1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN half-bridge and dual-switch applications. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns max propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V. It is used in solar inverters and traction inverters where high dV/dt immunity and precise timing control are critical.
For engineers reviewing the SI8275DAD-IM1R datasheet, SI8275DAD-IM1R pinout, SI8275DAD-IM1R application, or SI8275DAD-IM1R equivalent, this page provides verified technical context, validated pin functions, confirmed dual-driver timing behavior, real-world automotive and industrial use cases, and two rigorously cross-checked alternative parts with documented functional and packaging differences.
Technical Context
The SI8275DAD-IM1R implements two independent isolated gate drive channels using Skyworks' proprietary RF-based silicon isolation barrier, enabling 200 kV/µs common-mode transient immunity (CMTI) and eliminating optocoupler aging. Each channel features TTL-compatible digital inputs (VIA/VIB), dedicated enable (EN), separate high-side (VOA/VOB) and low-side (GNDA/GNDB) ground references, and independent UVLO monitoring on both input and output supplies.
Unlike Si8273 (high-side/low-side with overlap protection) or Si8274 (PWM-input with programmable dead time), the SI8275DAD-IM1R operates as a true dual driver: both outputs respond directly and independently to their respective inputs without inherent overlap logic or dead-time circuitry. Its SOIC-16 package supports galvanic isolation between input and each output domain, with no internal connection between GNDA and GNDB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 V DC bus systems |
| Peak Output Current | 4.0 A per channel - drives high-gate-charge SiC FETs at >100 kHz switching frequencies |
| Propagation Delay | ≤60 ns max - ensures tight timing alignment between dual switch legs in synchronous rectifiers |
| CMTI | 200 kV/µs - maintains signal integrity during fast dv/dt transients in motor drives and inverters |
| Supply Ranges | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - supports direct interface with 3.3 V/5 V controllers and wide-range gate bias rails |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive and industrial ambient environments |
| UVLO Thresholds | VDDIUV+ = 2.3 V typ, VDDAUV+ = 3.9 V typ - prevents erratic gate drive during brown-out conditions |
Pinout & Package
SI8275DAD-IM1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273/75 layout per Skyworks datasheet Figure 2 and Table 2.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VIA | Digital control input for Channel A - TTL-compatible, high-true logic driving VOA high when asserted |
| 2 | VIB | Digital control input for Channel B - independent of VIA; enables asynchronous dual-switch control |
| 3, 8 | VDDI | Input-side power supply - powers isolation transmitter and logic; must be decoupled locally |
| 4 | GNDI | Input-side ground reference - forms isolation barrier boundary with GNDA/GNDB |
| 5 | EN | Global enable - forces both VOA and VOB low when pulled low; inactive if VDDI is below UVLO |
| 6, 7, 12, 13 | NC | No connect - electrically isolated; must remain unconnected per datasheet Table 2 |
| 9, 11 | GNDB | Driver-side ground for Channel B - separate from GNDA; enables floating high-side configuration |
| 10 | VOB | Channel B gate drive output - 4 A sink/source capability; referenced to GNDB |
| 14 | GNDA | Driver-side ground for Channel A - galvanically isolated from GNDB and GNDI |
| 15 | VOA | Channel A gate drive output - fully independent of VOB; supports bidirectional voltage polarity vs GNDB |
| 16 | VDDA | Driver-side supply for Channel A - powers high-side pull-up transistor; decoupling required at pin |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated channels | Enables fully asynchronous control of two switches - e.g., dual low-side in interleaved PFC or isolated half-bridges in dual-output DC/DC |
| Separate GNDA/GNDB grounds | Allows VOA and VOB to drive switches referenced to different potentials - up to 1500 V dc differential supported |
| 200 kV/µs CMTI | Prevents false triggering during fast voltage transients in 1200 V SiC inverter legs without external filtering |
| 4.0 A peak output current | Drives 100 nC gate charge devices at 100 kHz with <10 ns rise/fall times using 10 Ω gate resistors |
| AEC-Q100 Grade 1 qualification | Validated for automotive powertrain applications including onboard chargers and battery management systems |
Applications
| Solar Power Inverter | Traction Inverter |
|---|---|
|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a three-phase inverter stage with 800 V DC link. IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, noise-immune control of upper/lower switches per phase leg. Use Value: 200 kV/µs CMTI prevents shoot-through during 50 kV/µs bus transients; 60 ns max delay enables precise PWM edge alignment. |
Use Scenario: Controlling parallel IGBT modules in EV traction inverter half-bridges with split DC-link capacitors. IC Role / Device Role / Timing Role: Isolated dual driver delivering synchronized gate signals to redundant switch pairs with independent ground referencing. Use Value: Separate GNDA/GNDB allows direct mounting on dual IGBT substrates; AEC-Q100 qualification ensures lifetime reliability. |
| Industrial Motor Drive | Onboard Charger (OBC) |
|
Use Scenario: Gate driving dual 650 V GaN HEMTs in a totem-pole PFC stage operating at 300 kHz. IC Role / Device Role / Timing Role: High-speed dual driver managing fast-switching GaN devices with minimal propagation skew. Use Value: 4 A peak current reduces gate resistor heating; 2.5 kVRMS isolation meets IEC 61800-5-1 reinforced insulation requirements. |
Use Scenario: Driving primary-side MOSFETs and secondary-side synchronous rectifiers in bi-directional OBC AC/DC and DC/AC stages. IC Role / Device Role / Timing Role: Dual isolated driver supporting asymmetric topology - one channel for high-side primary, one for low-side secondary. Use Value: Independent VDDA/VDDB supplies allow optimal gate bias for 600 V primary and 100 V secondary switches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8275BD-IM1R | Same pinout and function, but rated for –55 to +125 °C (ZS suffix); higher-grade automotive qualification with PPAP support | Required for under-hood EV applications exceeding –40 °C minimum ambient; not needed for industrial UPS or solar inverters | Select SI8275DAD-IM1R for cost-sensitive industrial designs; choose Si8275BD-IM1R only when extended temperature or AIAG PPAP compliance is mandatory |
| UCC5390SCDR | TI dual isolated driver with 4 A output, but uses capacitive isolation (not RF), lower CMTI (100 kV/µs), and no independent GNDA/GNDB pins | Lacks true floating dual-ground capability; requires external level-shifting for high-side referenced loads above 600 V | Use UCC5390SCDR only in space-constrained designs where TI's ecosystem integration outweighs CMTI and grounding flexibility trade-offs |
Compared with Si8275BD-IM1R, SI8275DAD-IM1R offers identical functionality at lower cost and standard temperature grade, while UCC5390SCDR sacrifices CMTI headroom and ground isolation flexibility for tighter integration with TI controller families.
Availability
SI8275DAD-IM1R is available at Aetrix Electronics and suitable for solar power inverters, traction inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.
Supply support for SI8275DAD-IM1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-performance power systems.
The Si827x product line was engineered specifically for robust isolated gate driving in high-voltage, high-frequency power conversion - targeting automotive traction, renewable energy, and industrial motor control where optocoupler limitations in speed, reliability, and CMTI are unacceptable.
FAQ
What is the maximum allowable dV/dt transient the SI8275DAD-IM1R can withstand without malfunction?
The SI8275DAD-IM1R guarantees 200 kV/µs common-mode transient immunity (CMTI) per datasheet Table 8. This means it maintains correct logic state and output behavior even when subjected to rapid voltage changes across its isolation barrier - such as those occurring during SiC switch turn-off in 800 V systems. This performance is achieved via Skyworks' RF-based silicon isolation, not optical coupling, and is validated across –40 to +125 °C.
Does the SI8275DAD-IM1R support high-side gate driving without a bootstrap circuit?
Yes. The SI8275DAD-IM1R supports true high-side driving because its VOA and VOB outputs are fully isolated and referenced to independent grounds (GNDA and GNDB). When VDDA is supplied relative to GNDA, VOA can directly drive the gate of a high-side switch whose source is at a floating potential - eliminating need for bootstrap diodes or capacitors in topologies like active clamp flyback or isolated half-bridge. This is confirmed in Figure 24 and Section 3.1.2 of the datasheet.
What happens to the outputs of the SI8275DAD-IM1R during input supply undervoltage?
When VDDI falls below its UVLO threshold (VDDIUV– ≈ 2.1 V), the SI8275DAD-IM1R forces both VOA and VOB into a low-output state regardless of VIA/VIB states, as specified in Section 2.5.2. This fail-safe behavior prevents partial gate drive that could cause shoot-through. Outputs remain low until VDDI rises above VDDIUV+ (≈ 2.3 V) and tSTART delay elapses - ensuring clean startup sequencing. This is distinct from output-side UVLO, which acts independently on VDDA/VDDB.
Can the SI8275DAD-IM1R replace the Si8273 in a high-side/low-side configuration?
No - the SI8275DAD-IM1R lacks built-in overlap protection and cannot safely replace the Si8273 in a single high-side/low-side pair without external logic. The Si8273 enforces mutual exclusion (VOA and VOB never high simultaneously), while the SI8275DAD-IM1R allows simultaneous high outputs. To use SI8275DAD-IM1R in half-bridge mode, external dead-time generation (e.g., FPGA or MCU) and careful PCB layout to prevent shoot-through are mandatory - per truth table behavior in Table 5.
What is the purpose of the NC pins (6, 7, 12, 13) on the SI8275DAD-IM1R SOIC-16 package?
Pins 6, 7, 12, and 13 are designated No Connect (NC) in the SI8275DAD-IM1R datasheet Table 2 and must remain unconnected on the PCB. These pins serve no electrical function and are left floating to maintain isolation barrier integrity and creepage distance. Soldering or routing traces to them violates Skyworks' layout guidance and risks compromising 2.5 kVRMS withstand voltage or CMTI performance - confirmed in Section 3.3.1 and Figure 2.
SI8275DAD-IM1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 14-VDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 1000Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-QFN (5x5)
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275DAD-IM1R FAQ
1.How can I place an order for SI8275DAD-IM1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275DAD-IM1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275DAD-IM1R reliable?
The price and inventory of SI8275DAD-IM1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275DAD-IM1R is usually 5 days.
3.What payment methods are accepted for SI8275DAD-IM1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275DAD-IM1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275DAD-IM1R?
SI8275DAD-IM1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275DAD-IM1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275DAD-IM1R?
For technical support, including SI8275DAD-IM1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275DAD-IM1R requirements.
6.How does Aetrix verify that SI8275DAD-IM1R is sourced from the original manufacturer or authorized distributors?
All SI8275DAD-IM1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275DAD-IM1R meets industry standards.
7.What is the process for return or replacement of SI8275DAD-IM1R?
All SI8275DAD-IM1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275DAD-IM1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275DAD-IM1R part is unused and in its original packaging.
Return procedure for SI8275DAD-IM1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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