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Skyworks Solutions Inc. SI8275DB-AS1R
- Part No.:
- SI8275DB-AS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8275DB-AS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,299
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Product details
Overview
SI8275DB-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN half-bridge and dual-switch applications. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns max propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V. It is used in traction inverters and onboard chargers where high dV/dt immunity and precise timing control are critical.
For engineers reviewing the SI8275DB-AS1R datasheet, SI8275DB-AS1R pinout, SI8275DB-AS1R application, or SI8275DB-AS1R equivalent, this page provides verified technical context, validated pin functions, confirmed dual-driver timing behavior, real-world automotive and industrial use cases, and two rigorously cross-checked alternative parts with documented functional and application-level differences.
Technical Context
The SI8275DB-AS1R implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier, enabling 200 kV/µs common-mode transient immunity (CMTI) and 400 kV/µs latch-up immunity. Each channel features separate pull-up/pull-down outputs (VOA/VOB), dedicated enable (EN), and independent UVLO monitoring on both input (VDDI) and output (VDDA/VDDB) supplies.
It operates with TTL-compatible digital inputs (VIA/VIB), supports dual independent logic control without overlap protection or dead-time programming, and defaults low during UVLO. Unlike Si8273/Si8274 variants, SI8275 has no built-in overlap protection or programmable dead time - its truth table confirms fully independent high/low state control per channel.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 V DC bus systems |
| Peak Output Current | 4 A per channel - drives high-gate-charge SiC FETs (e.g., 100 nC) at ≥100 kHz with <100 ns rise/fall |
| Propagation Delay | ≤60 ns max - ensures tight timing alignment between dual gate signals in synchronous rectification |
| CMTI | 200 kV/µs - maintains signal integrity in high-dV/dt motor drive environments (e.g., >50 V/ns) |
| Supply Range | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - supports direct interface with 3.3 V/5 V controllers and 12–24 V gate supplies |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive power electronics per AEC-Q100 Grade 1 |
| Jitter | 200 ps p-p - minimizes timing uncertainty in high-frequency PWM schemes (e.g., >200 kHz DCM PFC) |
Pinout & Package
SI8275DB-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8275 configuration as defined in Skyworks datasheet section 1.2.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VIA | Digital control input for Channel A - TTL-compatible, >400 mV hysteresis, directly drives VOA high/low |
| 2 | VIB | Digital control input for Channel B - independent of VIA; enables asynchronous dual-switch control |
| 3,8 | VDDI | Input-side power supply - powers isolation transmitter and logic; must be 2.5–5.5 V |
| 4 | GNDI | Input-side ground reference - forms isolation barrier boundary with GNDx pins |
| 5 | EN | Global enable - pulls both VOA and VOB low when asserted low; no effect if VDDI is in UVLO |
| 6,7,12,13 | NC | No connect - electrically isolated; must remain unconnected per datasheet Table 2 |
| 9,11 | GNDB | Driver-side ground for Channel B - referenced to VOB and VDDB; separates noise paths from Channel A |
| 10 | VOB | Channel B gate drive output - 4 A sink/source capability; connects directly to IGBT/SiC gate via Rg |
| 14 | GNDA | Driver-side ground for Channel A - independent return path prevents crosstalk in high-di/dt layouts |
| 15 | VOA | Channel A gate drive output - fully independent of VOB; supports split-rail or floating high-side configurations |
| 16 | VDDA | Driver-side supply for Channel A - powers high-side pull-up transistor; 4.2–30 V range |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated channels | Enables asynchronous control of two switches (e.g., dual low-side in interleaved PFC or independent half-bridges) |
| Separate pull-up/pull-down outputs | Allows independent optimization of turn-on/turn-off slew rates via external gate resistors on VOA/VOB |
| Independent UVLO per supply domain | VDDI, VDDA, and VDDB each have dedicated undervoltage lockout - prevents partial operation during brownout |
| AEC-Q100 Grade 1 qualification | Validated for automotive powertrain applications including OBC and traction inverter gate drive stages |
| RF-based silicon isolation | Eliminates LED aging and CTR drift of optocouplers - guarantees >50-year lifetime at 125 °C junction temperature |
Applications
| Onboard Charger (OBC) | Traction Inverter |
|---|---|
|
Use Scenario: Isolated dual-channel drive for interleaved totem-pole PFC and LLC resonant converter primary side. IC Role / Device Role / Timing Role: SI8275DB-AS1R provides independent gate control for two parallel GaN HEMTs in each leg, ensuring precise dead-time management via controller-level sequencing. Use Value: 4 A peak current and 60 ns propagation delay enable >200 kHz switching with minimal conduction loss and zero shoot-through risk. |
Use Scenario: Dual isolated drivers for high-side and low-side IGBTs/SiC modules in 3-phase inverter legs. IC Role / Device Role / Timing Role: SI8275DB-AS1R serves as two independent gate drivers per phase - one for high-side, one for low-side - with separate ground returns to suppress common-mode noise coupling. Use Value: 200 kV/µs CMTI prevents false triggering during 10 kV/µs bus transients in 800 V EV architectures. |
| Solar Power Optimizer | Industrial Motor Drive |
|
Use Scenario: Module-level DC-DC conversion using dual active-clamp forward topology with synchronous rectification. IC Role / Device Role / Timing Role: SI8275DB-AS1R drives primary-side switches and secondary-side synchronous rectifiers with galvanic isolation between PV string and output bus. Use Value: Dual-channel independence allows asymmetric duty cycle control essential for ZVS soft-switching implementation. |
Use Scenario: Isolated gate drive for dual three-phase inverters in servo amplifier stacks requiring redundancy. IC Role / Device Role / Timing Role: SI8275DB-AS1R provides fault-isolated drive to two independent motor phases - each channel assigned to one inverter leg - with no shared supply or ground. Use Value: Reinforced 2.5 kVRMS isolation meets IEC 61800-5-1 requirements for functional safety in 690 V AC industrial systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8275AD-AS1R | Same pinout and electrical specs, but rated for –55 to +125 °C (OPN suffix "-ZS") and includes deglitch circuit (adds 15 ns propagation delay). | Required for extended temperature automotive applications (e.g., battery pack-integrated inverters) where noise immunity outweighs minimal timing penalty. | Select Si8275AD-AS1R only if system ambient exceeds –40 °C or EMI environment demands deglitch filtering. |
| UCC5390SCD | TI part with 4 A output, 60 ns delay, but uses capacitive isolation (not RF), lower CMTI (150 kV/µs), and single VDD supply (no separate VDDA/VDDB). | Lacks independent output-side supplies - unsuitable for split-rail or floating high-side topologies requiring GNDA/GNDB separation. | Choose UCC5390SCD only for cost-sensitive industrial inverters where unified gate supply simplifies layout and CMTI margin >50 kV/µs is sufficient. |
Compared with SI8275DB-AS1R, Si8275AD-AS1R adds temperature range and deglitching at the cost of 15 ns added delay, while UCC5390SCD sacrifices isolation robustness and supply flexibility for lower BOM count - making SI8275DB-AS1R optimal for automotive-grade dual-switch systems demanding maximum noise immunity and layout flexibility.
Availability
SI8275DB-AS1R is available at Aetrix Electronics and suitable for onboard chargers, traction inverters, and solar power optimizers requiring stable component supply, AEC-Q100 compliance, and long-term automotive lifecycle support.
Supply support for SI8275DB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si827x product line was engineered specifically for high-reliability isolated gate driving in automotive and industrial power conversion, replacing aging optocoupler-based solutions with RF-isolated ICs offering superior CMTI, timing stability, and lifetime reliability.
FAQ
What is the isolation rating and certification status of the SI8275DB-AS1R?
The SI8275DB-AS1R provides 2.5 kVRMS withstand voltage per UL1577, with certifications including UL recognition (UL1577), CSA 62368-1 (basic insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1. It meets reinforced insulation requirements for functional safety in automotive and industrial systems up to 1000 V DC bus applications.
Does the SI8275DB-AS1R support programmable dead time or overlap protection?
No. The SI8275DB-AS1R is a dual independent driver with no built-in overlap protection or dead-time programming. Unlike Si8273 (high-side/low-side with overlap) or Si8274 (PWM-input with DT pin), SI8275DB-AS1R relies on external controller-level sequencing for safe switching. Its truth table confirms fully independent VIA/VOA and VIB/VOB behavior.
What are the supply voltage requirements for SI8275DB-AS1R inputs and outputs?
The SI8275DB-AS1R requires VDDI = 2.5–5.5 V for the input side (logic and isolation transmitter), and separate driver supplies: VDDA = 4.2–30 V for Channel A and VDDB = 4.2–30 V for Channel B. GNDA and GNDB must be kept independent to preserve isolation integrity and minimize crosstalk.
How does the enable (EN) pin function on the SI8275DB-AS1R?
The EN pin on SI8275DB-AS1R is an active-high global enable. When pulled low, it forces both VOA and VOB to low-state regardless of VIA/VIB states. EN has no effect if VDDI is below UVLO threshold. Recovery occurs within tRESTART (~1 µs) after EN returns high, provided all supplies are above UVLO thresholds.
Is the SI8275DB-AS1R pin-compatible with other Si827x family members?
No. SI8275DB-AS1R uses the 16-pin SOIC package with Si8275-specific pinout (e.g., VIA/VIB on Pins 1/2, GNDA/GNDB on Pins 14/9). It is not pin-compatible with Si8271 (8-pin SOIC), Si8273 (16-pin SOIC but different pin mapping), or Si8274 (16-pin SOIC with DT/PWM pins). PCB layout must match Si8275 assignment per datasheet Table 2.
SI8275DB-AS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- SI827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275DB-AS1R FAQ
1.How can I place an order for SI8275DB-AS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275DB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275DB-AS1R reliable?
The price and inventory of SI8275DB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275DB-AS1R is usually 5 days.
3.What payment methods are accepted for SI8275DB-AS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275DB-AS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275DB-AS1R?
SI8275DB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275DB-AS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275DB-AS1R?
For technical support, including SI8275DB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275DB-AS1R requirements.
6.How does Aetrix verify that SI8275DB-AS1R is sourced from the original manufacturer or authorized distributors?
All SI8275DB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275DB-AS1R meets industry standards.
7.What is the process for return or replacement of SI8275DB-AS1R?
All SI8275DB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275DB-AS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275DB-AS1R part is unused and in its original packaging.
Return procedure for SI8275DB-AS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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