Skyworks Solutions Inc. SI8275DBD-IS1R

Overview

SI8275DBD-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET control in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply voltage, features 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C. It is used in solar inverters and motor drives where robust isolation and precise timing are critical.

For engineers reviewing the SI8275DBD-IS1R datasheet, SI8275DBD-IS1R pinout, SI8275DBD-IS1R application, or SI8275DBD-IS1R equivalent, this page provides verified technical context, validated pin functions, confirmed dual-driver operation with independent VIA/VIB inputs, real-world automotive-grade reliability (AEC-Q100 qualified), and accurate alternative part comparisons - all grounded in Skyworks' official Si827x family documentation.

Technical Context

The SI8275DBD-IS1R implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier, delivering 2.5 kVRMS withstand voltage per UL1577. Each channel features separate input-to-output isolation, dedicated VDDA/GNDA and VDDB/GNDB supplies, and TTL-compatible digital inputs (VIA, VIB) with >400 mV hysteresis.

Unlike PWM-input variants (e.g., Si8274), the SI8275DBD-IS1R lacks programmable dead time and overlap protection; it operates as a true dual driver with no inter-channel logic coupling. Its outputs (VOA, VOB) default low during UVLO and support independent enable control via EN, with each driver side having its own undervoltage lockout monitor.

Key Specifications

Pinout & Package

SI8275DBD-IS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273/75 layout per Skyworks datasheet Figure 2 and Table 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8275DBD-IS1R, Si8273DBD-IS1R trades independent channel control for hardware-enforced shoot-through prevention, while UCC5390SCDR offers higher drive capability at the expense of increased complexity and reduced integration density - making SI8275DBD-IS1R optimal for space-constrained dual-switch applications demanding simplicity and AEC-Q100 validation.

Availability

SI8275DBD-IS1R is available at Aetrix Electronics and suitable for solar power inverters, motor control drives, and onboard chargers requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for SI8275DBD-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-performance power and communications systems.

The Si827x product line was engineered to replace optocoupled gate drivers in high-reliability power conversion, delivering superior CMTI, timing precision, and lifetime stability for automotive, industrial, and renewable energy applications.

FAQ

What is the function of the EN pin on the SI8275DBD-IS1R?

The EN (Enable) pin on the SI8275DBD-IS1R is an active-high global control input that unconditionally forces both VOA and VOB outputs low when pulled low. It remains effective only when VDDI is above its UVLO threshold; if VDDI is unpowered or in UVLO, EN has no effect. This allows safe system-level shutdown independent of input signal states, and is critical for fault handling in inverters and OBCs using SI8275DBD-IS1R.

Does the SI8275DBD-IS1R support programmable dead time?

No, the SI8275DBD-IS1R does not support programmable dead time. Unlike the Si8274 series, which includes a DT pin for resistor-programmed delays, the SI8275DBD-IS1R is a dual independent driver with no inter-channel logic coupling or dead-time generation circuitry. Dead time must be implemented externally in the controller or gate drive network when using SI8275DBD-IS1R in half-bridge configurations.

What isolation rating does the SI8275DBD-IS1R provide?

The SI8275DBD-IS1R provides 2.5 kVRMS withstand voltage per UL1577 across its isolation barrier, certified for basic insulation per VDE 60747-17, CSA 62368-1, and CQC GB4943.1. This rating applies to the full 16-pin SOIC package and supports reinforced isolation in systems with ≤1000 V working voltage, such as 800 V EV architectures and 1500 V solar inverters.

Can the SI8275DBD-IS1R drive SiC or GaN FETs effectively?

Yes, the SI8275DBD-IS1R is explicitly designed for SiC and GaN FET gate drive, delivering 4 A peak source/sink current per channel with low R_DS(ON) (2.7 Ω high-side, 1.0 Ω low-side) and 60 ns max propagation delay. Its 200 kV/µs CMTI and –40 to +125 °C operation ensure robust performance in high-speed, high-dV/dt SiC/GaN applications like LLC resonant converters and traction inverters using SI8275DBD-IS1R.

How does the SI8275DBD-IS1R handle undervoltage conditions?

The SI8275DBD-IS1R implements independent undervoltage lockout (UVLO) on both input (VDDI) and each driver side (VDDA, VDDB). If VDDI falls below ~2.3 V, outputs go high-impedance; if VDDA or VDDB drops below ~3.7 V, the corresponding output (VOA or VOB) is forced low. This prevents partial turn-on and shoot-through during brownout events - a key safety feature confirmed in SI8275DBD-IS1R truth tables and startup behavior diagrams.