Skyworks Solutions Inc. SI8275GB-IM1R

Overview

SI8275GB-IM1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET drive in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V.

For engineers reviewing the SI8275GB-IM1R datasheet, SI8275GB-IM1R pinout, SI8275GB-IM1R application, or SI8275GB-IM1R equivalent, this page provides verified functional identity, SOIC-16 package mapping, dual independent digital input logic (VIA/VIB), separate pull-up/pull-down outputs, UVLO fault shutdown, and automotive-grade AEC-Q100 qualification - all confirmed for SI8275GB-IM1R specifically.

Technical Context

The SI8275GB-IM1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier, each with dedicated input (VIA/VIB), enable (EN), and dual-output (VOA/VOB) stages. Each channel features independent undervoltage lockout (UVLO) monitoring on both input (VDDI) and driver-side supplies (VDDA/VDDB).

It operates as a dual driver - not high-side/low-side or PWM-configured - meaning VIA directly controls VOA and VIB directly controls VOB with no overlap protection or dead-time programmability. Output states default low during UVLO, and EN forces both outputs low regardless of input state when asserted low.

Key Specifications

Pinout & Package

SI8275GB-IM1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin functions are validated per Skyworks datasheet revision 206327E, Table 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8275GB-IM1R, Si8275AD-IM1R offers extended temperature capability at higher cost and no functional change, while UCC5390SCD trades automotive qualification and CMTI for higher peak current and integrated protection - making SI8275GB-IM1R optimal for AEC-Q100-compliant, noise-intensive dual-switch applications.

Availability

SI8275GB-IM1R is available at Aetrix Electronics and suitable for motor control systems, solar power inverters, onboard EV chargers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for SI8275GB-IM1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si827x product line was developed to replace aging optocoupled gate drivers with robust, high-speed, silicon-isolated alternatives for power conversion in automotive, industrial, and renewable energy systems.

FAQ

What is the isolation rating and certification status of SI8275GB-IM1R?

SI8275GB-IM1R provides 2.5 kVRMS withstand voltage per UL1577, with certifications including UL recognition, CSA 62368-1 (basic insulation), VDE 60747-17, and CQC GB4943.1. These approvals confirm its suitability for reinforced insulation in safety-critical power systems such as EV chargers and industrial inverters.

Does SI8275GB-IM1R support high-side and low-side configurations in a single half-bridge?

SI8275GB-IM1R does not integrate overlap protection or programmable dead time - it is a dual independent driver. To implement a half-bridge, external logic must ensure non-overlapping VIA/VIB signals, or SI8275GB-IM1R must be paired with a dedicated dead-time controller. Its separate VDDA/GNDA and VDDB/GNDB supplies allow true galvanic separation for high-side/low-side use.

What are the UVLO thresholds for SI8275GB-IM1R's input and driver supplies?

Per Skyworks datasheet 206327E, SI8275GB-IM1R has independent UVLO circuits: VDDI UVLO+ = 2.3 V typical, UVLO– = 2.1 V typical; VDDA/VDDB UVLO+ = 3.9 V typical, UVLO– = 3.7 V typical. Outputs default low during UVLO, and recovery requires tSTART (~1 µs) after supply crosses UVLO+.

Can SI8275GB-IM1R drive SiC or GaN FETs effectively?

Yes - SI8275GB-IM1R delivers 4 A peak source/sink current with ≤60 ns propagation delay and 2.7 Ω/1.0 Ω RDS(ON) output stages, enabling direct drive of medium-power SiC MOSFETs (e.g., 650 V/40 mΩ) and GaN HEMTs up to 100 kHz. Its 200 kV/µs CMTI prevents false triggering in fast-switching GaN applications.

Is SI8275GB-IM1R pin-compatible with other Si827x variants like SI8273 or SI8274?

No - SI8275GB-IM1R uses the SOIC-16 pinout defined for dual drivers (Table 2), which differs from SI8273 (high-side/low-side with overlap protection) and SI8274 (PWM-input with DT pin). While all share the same package footprint, pin functions for EN, NC, and supply rails are not interchangeable; PCB layout must match SI8275-specific assignment.