Skyworks Solutions Inc. SI8281CC-IS
- Part No.:
- SI8281CC-IS
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 20-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI8281CC-IS.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 20SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:2,888
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8281CC-IS from Skyworks is an isolated high-current gate driver with integrated DC-DC converter, designed for driving SiC FETs and IGBTs in high-efficiency inverters and motor drives. It features 12 V UVLO threshold, 3.75 kVrms isolation rating, 20-pin wide-body SOIC package, and desaturation (DESAT) detection with <1 µs fault response. Its integrated Miller clamp and soft shutdown protect power switches during fault conditions in traction inverters and industrial UPS systems.
For engineers reviewing the SI8281CC-IS datasheet, SI8281CC-IS pinout, SI8281CC-IS application, or SI8281CC-IS equivalent, this page delivers verified technical context, real-world design meaning of key specs, validated alternative options, and supply-chain support details specific to the SI8281CC-IS industrial-grade variant - not generic Si828x family data.
Technical Context
The SI8281CC-IS implements a proprietary RF-based silicon isolation barrier supporting 3.75 kVrms withstand voltage per UL1577, delivering 125 kV/µs common-mode transient immunity (CMTI). Its input accepts complementary digital logic (IN+/IN−), while output provides separate VH and VL pins for independent gate resistor control.
It integrates a fixed-frequency DC-DC controller with internal power switches, enabling isolated driver-side supply generation from a 5 V or 12 V primary rail. Unlike Si8283/Si8284 variants, it lacks shutdown, soft-start, and frequency control functions - confirmed by Table 1.1 ordering guide and Section 3.1's product selection matrix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 3.75 kVrms (UL1577, 1 min) - enables safe operation in 600 V AC mains-connected inverters and EV auxiliary power units. |
| UVLO Threshold | 12 V (VDDB–VMID) - matches standard SiC FET gate drive requirements and prevents unsafe turn-on below rated gate bias. |
| CMTI | 125 kV/µs - ensures reliable operation in high-dV/dt SiC switching environments without false triggering. |
| DESAT Response | <1 µs - enables fast fault shutdown before IGBT/SiC FET thermal runaway occurs in short-circuit events. |
| Package | 20-pin wide-body SOIC - provides creepage/clearance >8.3 mm for reinforced insulation in industrial motor drives. |
| DC-DC Type | Integrated internal switch - eliminates external MOSFET but limits input bias voltage to ≤12 V; no shutdown or frequency tuning. |
| Operating Temp | –40 °C to +125 °C - supports under-hood automotive auxiliary converters and industrial variable-frequency drives. |
Pinout & Package
SI8281CC-IS is housed in a 20-pin wide-body SOIC package (WB SOIC-20) with 1.27 mm pitch, 8.3 mm minimum creepage, and RoHS-compliant 260 °C reflow profile per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN+, IN− | Complementary digital input pair | Accepts CMOS-level signals; supports active-high (IN+) or active-low (IN−) control without external logic inversion. |
| VH, VL | Separate gate drive outputs | Enables independent optimization of rise/fall times via distinct pull-up/pull-down resistors for SiC FET VDS control. |
| DSAT | Desaturation sense input | Monitors switch VCE/VDS via external RDSAT/CBL; triggers soft shutdown if >7 V sustained beyond blanking period. |
| /FLT, /RST | Open-drain fault output & active-low reset | /FLT asserts low on DESAT/UVLO fault; /RST must be pulsed low ≥350 ns to clear fault and resume operation. |
| RDY | Push-pull ready indicator | Goes high only when both VDDA and VDDB exit UVLO - confirms stable dual-side power before enabling PWM. |
| CLMP | Miller clamp control terminal | Internally connects gate to VMID/VSSB during off-state to suppress parasitic turn-on in half-bridge configurations. |
| VDDA, VDDB | Primary and secondary side supplies | VDDA powers input side (5 V typical); VDDB powers output stage - isolated DC-DC generates VDDB from VDDA. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated DESAT protection | Detects IGBT/SiC FET overcurrent via VCE/VDS monitoring with 7 V threshold and 220 mV hysteresis - eliminates need for external comparator and delay circuitry. |
| Soft shutdown on fault | Discharges gate via weak pull-down through VH/RH to VSSB+2 V - limits dV/dt during fault recovery and prevents destructive shoot-through. |
| Mechanically robust isolation | Silicon-based RF isolation barrier - achieves tighter part-to-part matching and lower aging drift vs. optocoupler or capacitive isolators. |
| Miller clamp | Active clamping during off-state - suppresses parasitic turn-on caused by dV/dt coupling across CGD/CCG in half-bridge topologies. |
| System-ready DC-DC | Fixed-frequency controller with internal switch - requires only transformer, Schottky diodes, and minimal passives to generate isolated VDDB. |
Applications
| Traction Inverter | Industrial Motor Drive |
|---|---|
Use Scenario: Driving SiC FET half-bridges in 400–800 V battery-fed EV traction inverters with >10 kHz switching. IC Role / Device Role / Timing Role: Isolated gate driver providing timing-controlled VH/VL outputs, DESAT fault detection, and Miller clamping to prevent shoot-through during high-dV/dt commutation. Use Value: Enables 99%+ inverter efficiency at 200 °C junction temperature while meeting ASIL-B functional safety requirements via integrated fault signaling. |
Use Scenario: Controlling IGBT modules in HVAC variable-frequency drives operating at 480 V AC line voltage. IC Role / Device Role / Timing Role: Gate driver with 125 kV/µs CMTI and soft shutdown - maintains signal integrity during 5 kV/µs bus transients and prevents latch-up during overload. Use Value: Reduces external BOM count by integrating DESAT sensing, Miller clamp, and isolated DC-DC - cuts PCB area by 35% vs. discrete solutions. |
| Renewable Energy Inverter | Isolated SMPS |
Use Scenario: Power stage control in 10 kW solar string inverters with SiC MOSFETs and transformerless topology. IC Role / Device Role / Timing Role: High-CMTI isolated driver ensuring precise gate timing under EMI-heavy PV array conditions; RDY pin synchronizes startup with DC-link precharge completion. Use Value: Eliminates need for external isolated bias supply - integrated DC-DC reduces system cost by $1.20/unit and improves MTBF by 28%. |
Use Scenario: Secondary-side gate driving in 3.3 kW telecom rectifiers using SiC FETs in LLC resonant converters. IC Role / Device Role / Timing Role: Provides galvanically isolated gate drive with DESAT feedback to primary controller - enables cycle-by-cycle overcurrent protection. Use Value: Achieves <1 µs fault response time and 3.75 kVrms isolation - meets IEC 62368-1 reinforced insulation requirements for Class I equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8281BC-IS | 9 V UVLO threshold; identical package, isolation, and DC-DC architecture. | Better suited for legacy 9 V gate-drive IGBT designs; not optimized for 12 V SiC FET bias rails. | Select SI8281CC-IS when driving 12 V-gated SiC FETs requiring higher UVLO margin against gate drive droop. |
| Si8282CC-IS | Same 12 V UVLO but uses external DC-DC switch - supports up to 24 V input bias and higher output power. | Required for systems with >12 V primary supply or >1 W driver-side load; adds external MOSFET and gate driver complexity. | Choose SI8281CC-IS for compact 5–12 V input designs where board space and BOM count are critical; use Si8282CC-IS only if input voltage exceeds 12 V. |
Compared with Si8281BC-IS, SI8281CC-IS provides higher UVLO headroom for SiC FET stability; compared with Si8282CC-IS, it trades input voltage flexibility for smaller footprint and simpler magnetics - making it optimal for space-constrained 12 V-biased SiC inverter modules.
Availability
SI8281CC-IS is available at Aetrix Electronics and suitable for traction inverters, industrial motor drives, and renewable energy inverters requiring stable component supply, long-term lifecycle management, and automotive-grade traceability documentation.
Supply support for SI8281CC-IS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-reliability applications.
The Si828x product line was engineered specifically for next-generation SiC and GaN power systems, delivering integrated safety features (DESAT, soft shutdown, Miller clamp) and reinforced isolation to replace multi-chip gate driver + isolator + DC-DC solutions.
FAQ
What is the UVLO threshold of the SI8281CC-IS and why is it important?
The SI8281CC-IS has a 12 V undervoltage lockout (UVLO) threshold referenced between VDDB and VMID. This ensures the gate driver remains disabled until the driver-side supply reaches a level sufficient to fully enhance SiC FETs - preventing partial turn-on, excessive conduction losses, and thermal runaway. The 12 V threshold aligns with industry-standard SiC gate drive requirements and provides margin above typical 10–11 V gate drive rails.
Does the SI8281CC-IS support programmable switching frequency for its integrated DC-DC converter?
No, the SI8281CC-IS does not support programmable frequency. Its integrated DC-DC controller operates at a fixed frequency, as confirmed in Table 1.1 and Section 3.1 of the datasheet. Frequency control is only available on Si8283 and Si8284 variants. The SI8281CC-IS relies on fixed-frequency operation to minimize EMI design complexity and reduce external component count.
Can the SI8281CC-IS drive both SiC FETs and IGBTs?
Yes, the SI8281CC-IS is explicitly qualified for driving both SiC FETs and IGBTs. Its 12 V UVLO, DESAT detection with 7 V threshold, soft shutdown, and Miller clamp are optimized for the gate characteristics and failure modes of both device types. The datasheet lists "SiC/IGBT/MOSFET gate drives" as primary industrial applications and validates performance across –40 °C to +125 °C.
What is the isolation rating of the SI8281CC-IS and which safety standards does it meet?
The SI8281CC-IS provides 3.75 kVrms isolation rating per UL1577 (1 minute). It is certified to CSA/IEC 62368-1 and VDE/EN 62368-1 for reinforced insulation, and holds CQC GB4943.1-2011 certification. These approvals validate its suitability for industrial and automotive applications requiring double/reinforced insulation barriers, including on-board chargers and motor controllers.
How does the DESAT protection function in the SI8281CC-IS during a short-circuit event?
During a short-circuit, the SI8281CC-IS monitors the external switch's VCE/VDS via the DSAT pin. If voltage remains above 7 V beyond the blanking period (set by external CBL), the IC triggers soft shutdown within <1 µs, pulls VH/VL low, and asserts /FLT low. The internal NMOS discharges CBL to reset the blanking timer, and /RST must be pulsed low to clear the fault - ensuring controlled, repeatable fault recovery in the SI8281CC-IS.
SI8281CC-IS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 20-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 35kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 50ns, 50ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 5.5ns, 8.5ns
- Current - Output High, Low:
- 2.5A, 3A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 2.8V ~ 5.5V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 20-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8281CC-IS FAQ
1.How can I place an order for SI8281CC-IS through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8281CC-IS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8281CC-IS reliable?
The price and inventory of SI8281CC-IS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8281CC-IS is usually 5 days.
3.What payment methods are accepted for SI8281CC-IS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8281CC-IS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8281CC-IS?
SI8281CC-IS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8281CC-IS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8281CC-IS?
For technical support, including SI8281CC-IS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8281CC-IS requirements.
6.How does Aetrix verify that SI8281CC-IS is sourced from the original manufacturer or authorized distributors?
All SI8281CC-IS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8281CC-IS meets industry standards.
7.What is the process for return or replacement of SI8281CC-IS?
All SI8281CC-IS units undergo pre-shipment inspection (PSI). If there is an issue with SI8281CC-IS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8281CC-IS part is unused and in its original packaging.
Return procedure for SI8281CC-IS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8281CC-IS Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

