My Inquiry
My Account
Skyworks Solutions Inc. SI8285ED-ISR
- Part No.:
- SI8285ED-ISR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI8285ED-ISR.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,687
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8285ED-ISR from Skyworks is a SiC FET–ready isolated gate driver with integrated DC-DC converter, designed for high-reliability inverter and motor control systems. It delivers 4 A peak source/sink drive current, supports 15 V UVLO threshold for SiC FETs, provides desaturation detection with <1 µs fault response, and features 5.0 kVrms isolation per UL1577-enabling robust operation in 1200 V SiC half-bridge topologies used in EV traction inverters.
For engineers reviewing the SI8285ED-ISR datasheet, SI8285ED-ISR pinout, SI8285ED-ISR application, or SI8285ED-ISR equivalent, this page delivers verified technical context on its integrated DC-DC controller (external switch configuration), soft shutdown behavior, Miller clamp functionality, and automotive-grade qualification-critical for selecting a safety-certified, high-CMTI gate driver for SiC power stages.
Technical Context
The SI8285ED-ISR implements an RF-based isolation channel with 125 kV/µs common-mode transient immunity (CMTI), enabling noise-resilient signal transmission across the barrier. Its input accepts complementary digital logic (IN+/IN−) with configurable active-high or active-low control, while the output side provides independent VH and VL pins for asymmetric gate resistor tuning.
This device integrates a feedback-controlled DC-DC controller optimized for external power switches, supporting wide input bias rails (7–24 V) and delivering up to 30 V driver-side supply. It includes programmable frequency dithering, soft-start, shutdown control, and a dedicated DSAT pin with 7 V desaturation threshold and 220 mV hysteresis-paired with internal blanking timer logic for reliable short-circuit protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5.0 kVrms withstand voltage (UL1577), enabling reinforced insulation in 1200 V SiC systems |
| Peak Output Current | ±4 A source/sink, sufficient to drive high-Qg SiC FETs at >100 kHz switching frequencies |
| UVLO Threshold | 15 V (VDDB–VMID), specifically calibrated for SiC FET gate drive stability and safe turn-off margin |
| CMTI | 125 kV/µs minimum, ensuring reliable operation during fast dV/dt transients in high-power inverters |
| Desat Detection | 7 V threshold with 220 mV hysteresis and <1 µs response, enabling ultra-fast short-circuit shutdown |
| DC-DC Configuration | External switch topology, allowing flexible transformer selection and higher input voltage support (7–24 V) |
| Operating Temp | –40 °C to +125 °C ambient, qualified per AEC-Q100 Grade 1 for automotive power electronics |
Pinout & Package
SI8285ED-ISR is housed in a 24-pin wide-body SOIC package (WB SOIC-24) with creepage/clearance optimized for reinforced insulation. Pin layout follows Skyworks' standard Si828x family assignment for industrial and automotive-grade variants.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN+, IN− | Complementary digital input pair | Enables active-high or active-low gate control without external logic; supports differential noise rejection |
| VH, VL | Independent high-side and low-side gate drive outputs | Allows separate Rg_on and Rg_off resistors to independently tune SiC FET rise/fall times and dV/dt |
| DSAT | Desaturation sense input | Monitors VDS/VCE via external RDSAT/DDSAT; triggers soft shutdown within <1 µs upon overcurrent |
| CLMP | Miller clamp control terminal | Actively clamps gate to VMID during high dV/dt events to prevent parasitic turn-on in half-bridge configurations |
| /FLT, /RST | Open-drain fault output and active-low reset | Enables system-level fault coordination: FLTb asserts low on DESAT/UVLO; RSTb clears fault after MCU intervention |
| RDY | Power-ready status indicator | Push-pull output goes high only when both VDDA and VDDB exit UVLO-provides hardware interlock for safe startup |
| SH/FC, SS | Shutdown/frequency control and soft-start inputs | Allow dynamic disable of DC-DC converter and programmable soft-start timing to limit inrush current |
Key Features
| Feature | Design Value |
|---|---|
| Integrated DC-DC controller | Feedback-controlled, dithered PWM with external switch support-enables efficient, low-EMI isolated bias supply (83% efficiency) |
| Soft shutdown on fault | Controlled gate discharge via weak pull-down path (VH–RH–VSSB) limits dV/dt during fault recovery, preventing secondary failure |
| Mechanically robust isolation | Silicon-based barrier with 5.0 kVrms rating and lifetime stability-superior to optocouplers in temperature drift and part-to-part matching |
| Automotive qualification | AEC-Q100 Grade 1 compliant, PPAP-supported, IMDS/CAMDS listed-validated for traction inverter and OBC use cases |
| Miller clamp circuit | Active NMOS clamp tied to VMID-eliminates need for external negative bias supply while suppressing parasitic turn-on in SiC half-bridges |
Applications
| EV Traction Inverter | Industrial Motor Drive |
|---|---|
Use Scenario: Driving 1200 V SiC FET half-bridges in 400–800 V battery-fed inverters for electric vehicle propulsion. IC Role / Device Role / Timing Role: Isolated gate driver providing timing-controlled, high-current turn-on/turn-off with real-time DESAT monitoring and soft shutdown. Use Value: Enables >98% inverter efficiency and >10 kHz switching while meeting ASIL-B functional safety requirements via integrated fault signaling and reset coordination. |
Use Scenario: Controlling IGBT/SiC modules in HVAC compressors, pumps, and conveyor drives operating at 480 VAC line voltage. IC Role / Device Role / Timing Role: High-CMTI isolated driver managing gate timing, Miller immunity, and overcurrent protection in noisy factory environments. Use Value: Reduces system-level BOM count by integrating DC-DC bias generation and eliminating external desaturation comparators and clamp transistors. |
| On-Board Charger (OBC) | Renewable Energy Inverter |
Use Scenario: Bidirectional SiC FET control in 11 kW+ AC/DC and DC/DC stages of automotive on-board chargers. IC Role / Device Role / Timing Role: Dual-role gate driver supporting synchronous rectification and phase-shifted full-bridge topologies with precise dead-time management. Use Value: Supports 96%+ OBC efficiency through low propagation delay (<60 ns) and tight channel-to-channel matching (<5 ns). |
Use Scenario: Gate driving for string inverters and central inverters converting solar DC to grid-synchronized AC in utility-scale PV farms. IC Role / Device Role / Timing Role: Reinforced-isolation driver handling high dv/dt transients from rapid MPPT transitions and grid fault ride-through events. Use Value: Ensures long-term reliability under 25+ year field life via 5.0 kVrms isolation, AEC-Q100 stress screening, and thermal derating up to 125 °C junction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8284ED-IS | Same pinout, identical specs, but lacks automotive qualification and PPAP documentation support | Suitable for industrial inverters where AEC-Q100 is not required; lower cost for non-automotive programs | Select Si8284ED-IS only if automotive traceability, IMDS reporting, and zero-defect manufacturing flows are unnecessary |
| UCC5870QDWJRQ1 | TI's 5.7 kVRMS automotive gate driver with integrated DC-DC; requires external Miller clamp transistor and has fixed 10 V UVLO | Better suited for IGBT-focused designs; lacks SiC-optimized 15 V UVLO and programmable soft-start | Choose UCC5870QDWJRQ1 only when leveraging TI's ecosystem tools and when 15 V SiC UVLO is not critical |
Compared with SI8285ED-ISR, Si8284ED-IS offers identical electrical performance but no automotive process controls, while UCC5870QDWJRQ1 provides higher isolation voltage but requires additional external components and lacks SiC-specific UVLO tuning-making SI8285ED-ISR the optimal choice for AEC-Q100–compliant SiC traction systems requiring minimal BOM and integrated safety functions.
Availability
SI8285ED-ISR is available at Aetrix Electronics and suitable for EV traction inverters, on-board chargers, and industrial motor drives requiring stable component supply, automotive-grade traceability, and long-lifecycle availability.
Supply support for SI8285ED-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si828x product line was engineered specifically for next-generation wide-bandgap power systems, delivering integrated safety, high CMTI, and automotive-qualified reliability for SiC and GaN-based inverters and motor controllers.
FAQ
What is the isolation voltage rating of the SI8285ED-ISR?
The SI8285ED-ISR is rated for 5.0 kVrms withstand voltage per UL1577, providing reinforced insulation suitable for 1200 V SiC power stages. This rating is validated across temperature and lifetime, with no degradation in CMTI or leakage current under continuous operation at 125 °C junction temperature.
Does the SI8285ED-ISR support SiC FETs with 15 V gate drive requirements?
Yes, the SI8285ED-ISR features a 15 V UVLO threshold (VDDB–VMID) explicitly designed for SiC FET gate drive stability. Its 30 V driver-side supply and ±4 A peak output ensure robust turn-on margin and controlled turn-off-even under high dV/dt conditions typical in SiC half-bridges.
How does the desaturation detection work on the SI8285ED-ISR?
The SI8285ED-ISR monitors VDS/VCE via the DSAT pin using an external RDSAT/DDSAT network. When voltage exceeds 7 V (with 220 mV hysteresis) for longer than the blanking time set by CBL, it triggers soft shutdown within <1 µs and asserts FLTb low-enabling immediate system-level fault response without software latency.
Is the SI8285ED-ISR pin-compatible with other Si828x family members?
Yes, SI8285ED-ISR shares the same 24-pin wide-body SOIC footprint and pin assignment as all Si8283/84 variants. It is functionally and physically compatible with Si8284ED-IS and Si8284ED-AS, differing only in automotive qualification and shipping documentation-not in pinout, timing, or electrical behavior.
What DC-DC converter topology does the SI8285ED-ISR implement?
The SI8285ED-ISR uses a feedback-controlled, current-mode PWM DC-DC controller configured for external power switches. It supports dithered frequency modulation to reduce EMI, achieves 83% efficiency, and allows flexible transformer selection-ideal for generating isolated 15–30 V bias rails from 7–24 V input sources.
SI8285ED-ISR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 50ns, 50ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 5.5ns, 8.5ns
- Current - Output High, Low:
- 2A, 4.1A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 16V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8285ED-ISR FAQ
1.How can I place an order for SI8285ED-ISR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8285ED-ISR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8285ED-ISR reliable?
The price and inventory of SI8285ED-ISR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8285ED-ISR is usually 5 days.
3.What payment methods are accepted for SI8285ED-ISR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8285ED-ISR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8285ED-ISR?
SI8285ED-ISR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8285ED-ISR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8285ED-ISR?
For technical support, including SI8285ED-ISR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8285ED-ISR requirements.
6.How does Aetrix verify that SI8285ED-ISR is sourced from the original manufacturer or authorized distributors?
All SI8285ED-ISR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8285ED-ISR meets industry standards.
7.What is the process for return or replacement of SI8285ED-ISR?
All SI8285ED-ISR units undergo pre-shipment inspection (PSI). If there is an issue with SI8285ED-ISR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8285ED-ISR part is unused and in its original packaging.
Return procedure for SI8285ED-ISR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8285ED-ISR Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
