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Skyworks Solutions Inc. SI8286DD-AS
- Part No.:
- SI8286DD-AS
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI8286DD-AS.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,606
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Product details
Overview
SI8286DD-AS from Skyworks Solutions is an automotive-grade, isolated high-current gate driver with integrated DC-DC converter, designed specifically for driving SiC FETs in traction inverters and on-board chargers. It features 5.0 kVrms isolation (UL 1577), 13 V UVLO threshold, soft shutdown, DESAT detection with <1 µs response, and operates across –40 to 125 °C.
For engineers reviewing the SI8286DD-AS datasheet, SI8286DD-AS pinout, SI8286DD-AS application, or SI8286DD-AS equivalent, this page delivers verified technical context, validated pin functions, confirmed SiC-FET-ready safety features, and real-world automotive power stage integration guidance - all grounded in Skyworks' official Si828x family documentation.
Technical Context
The SI8286DD-AS implements a proprietary RF-based silicon isolation barrier enabling 125 kV/µs CMTI and robust noise immunity without startup initialization. Its dual-channel architecture supports complementary digital inputs (IN+/IN−) and provides independent VH/VL gate drive outputs with integrated Miller clamp for half-bridge SiC FET protection.
This device integrates a feedback-controlled DC-DC controller with external power switch support, programmable frequency, soft-start, and shutdown control - all configured for high-voltage input rails (e.g., 12 V automotive systems). Fault management includes active-low FLTb output, push-pull RDY indication, and active-low RSTb reset with blanking timer coordination via DSAT/CBL.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5.0 kVrms withstand voltage per UL 1577 - enables reinforced insulation in high-voltage automotive inverters. |
| UVLO Threshold | 13 V (VDDB–VMID) - ensures reliable turn-on for SiC FET gate bias while preventing operation below safe drive voltage. |
| DESAT Response | <1 µs - enables ultra-fast short-circuit protection critical for SiC FETs with minimal energy dissipation during fault. |
| CMTI | 125 kV/µs - maintains signal integrity under fast dV/dt transients in motor drive and traction inverter environments. |
| Operating Temp | –40 to 125 °C - meets AEC-Q100 Grade 1 requirements for under-hood automotive power electronics. |
| DC-DC Efficiency | 83% - reduces heat generation in compact, thermally constrained gate driver supply designs. |
| Package | 24-pin wide-body SOIC - provides creepage/clearance compliance for 5 kVrms isolation and thermal robustness. |
Pinout & Package
SI8286DD-AS is housed in a 24-pin wide-body SOIC package (WB SOIC-24) with 1.27 mm pitch, RoHS-compliant, and rated for 260 °C peak reflow. The package supports reinforced insulation per EN/IEC 62368-1 and GB4943.1-2011.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| IN+ | Non-inverting input | Accepts CMOS-level active-high control signal; used with IN− for differential noise immunity in high-dV/dt environments. |
| IN− | Inverting input | Accepts CMOS-level active-low control signal; complements IN+ for robust gate timing in motor control PWM stages. |
| VH | High-side gate drive output | Drives SiC FET gate high via external pull-up resistor; supports separate rise/fall time tuning with RH. |
| VL | Low-side gate drive output | Drives SiC FET gate low via internal strong pull-down; enables precise turn-off control and Miller clamping. |
| DSAT | Desaturation sense input | Monitors VDS of SiC FET through RDSAT/DDSAT; triggers soft shutdown within <1 µs if desaturation exceeds 7 V threshold. |
| /FLT | Fault indicator output | Open-drain active-low signal indicating DESAT or UVLO fault; requires external 1 kΩ pull-up for MCU interrupt interface. |
| /RST | Active-low reset input | Clears fault latch after DESAT event; must be held low ≥350 ns to restore operational state. |
| RDY | Power-ready status | Push-pull output high when both VDDA and VDDB exit UVLO - confirms isolated supply readiness before enabling PWM. |
| CLMP | Miller clamp control | Internally connects gate to VMID during off-state to prevent parasitic turn-on in half-bridge configurations. |
| VMID | Reference midpoint | Common node for DSAT sensing, CBL blanking capacitor, and optional negative gate bias generation. |
| VSSB | Secondary-side ground | Driver-side return path; shorted to VMID unless negative gate bias is implemented. |
| VDDB | Secondary-side supply | Regulated output of integrated DC-DC converter; powers gate drive circuitry and supports 30 V max operating voltage. |
| SH/FC | Shutdown/Frequency control | Configures DC-DC switching frequency or enables shutdown mode - functional only on Si8283/Si8284 variants like SI8286DD-AS. |
| SS | Soft-start control | Adjusts DC-DC startup ramp rate to limit inrush current into isolated transformer and secondary capacitors. |
| COMP | DC-DC error amplifier output | Provides feedback loop compensation point for stable regulation of VDDB under dynamic load conditions. |
| ESW | External switch driver | Drives external MOSFET in DC-DC flyback topology - confirms SI8286DD-AS uses external power switch configuration. |
| VSNS | Voltage sense input | Monitors secondary-side output voltage for closed-loop DC-DC regulation; referenced to VSSB. |
| GNDP | Primary-side ground | Input-side reference for VDDA and logic inputs; galvanically isolated from VSSB by silicon barrier. |
| VDDA | Primary-side supply | Accepts 4.5–24 V input; powers isolation transmitter, logic interface, and internal regulators. |
| NC | No connect | Two pins (pins 1 and 24) are unconnected - no internal bonding or function; must remain floating per datasheet. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated DESAT detection | 7 V threshold with 220 mV hysteresis and programmable blanking via external CBL - eliminates need for discrete comparator and timing circuits in SiC FET protection. |
| Soft shutdown | Controlled gate discharge via weak pull-down on VH - limits dV/dt during fault to prevent secondary breakdown of SiC FETs. |
| Mechanically robust isolation | Silicon-based RF isolation barrier with 5.0 kVrms rating and 125 kV/µs CMTI - outperforms optocouplers in lifetime stability and temperature drift. |
| Automotive-grade qualification | AEC-Q100 Grade 1 qualified, PPAP-supported, IMDS/CAMDS listed - meets full production requirements for HEV/EV powertrain systems. |
| Configurable DC-DC converter | External switch topology with programmable frequency, soft-start, and shutdown - enables flexible isolated bias supply design for 12 V automotive rails. |
| Miller clamp | Active clamp between CLMP and VMID during off-state - prevents parasitic turn-on in half-bridge SiC FETs caused by drain-to-gate capacitance coupling. |
Applications
| Traction Inverter | On-Board Charger (OBC) |
|---|---|
|
Use Scenario: High-power SiC FET half-bridge switching in electric vehicle main drive inverter, operating at 800 V bus and >100 kHz PWM. IC Role / Device Role / Timing Role: Isolated gate driver providing independent VH/VL control, DESAT fault monitoring, and soft shutdown to protect 1200 V SiC modules during short-circuit events. Use Value: Enables <1 µs fault response and 125 kV/µs noise immunity - critical for maintaining system reliability under high dV/dt and EMI in under-hood environments. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBC, requiring isolated gate drive for SiC FETs in totem-pole PFC and CLLC resonant stages. IC Role / Device Role / Timing Role: Dual-function IC delivering isolated gate drive and regulated 15 V secondary supply via integrated DC-DC controller with external switch. Use Value: Reduces BOM count by eliminating discrete isolated bias supply while supporting 13 V UVLO optimized for SiC FET gate drive stability. |
| DC-DC Converter | Industrial Motor Drive |
|
Use Scenario: 3.3 kW isolated DC-DC stage in vehicle power distribution unit, stepping down 800 V battery to 48 V auxiliary rail using SiC FETs. IC Role / Device Role / Timing Role: Gate driver with integrated DESAT protection and RDY signaling to coordinate startup sequencing and fault recovery across multiple power stages. Use Value: Push-pull RDY output confirms simultaneous readiness of primary and secondary supplies - prevents premature PWM enable and ensures safe power-up sequence. |
Use Scenario: High-efficiency variable-speed drive for industrial pumps and compressors using 650 V SiC FETs in three-phase inverter topology. IC Role / Device Role / Timing Role: Isolated driver with Miller clamp and complementary inputs to suppress false turn-on in noisy factory EMI environments. Use Value: 24-pin WB SOIC package provides 8.3 mm creepage - satisfies IEC 61800-5-1 reinforced insulation requirements for industrial safety standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8284DD-AS | Same pinout, identical 24-pin WB SOIC package, 5 kVrms isolation, 13 V UVLO, and external-switch DC-DC architecture - differs only in ordering suffix (SI8284 vs SI8286); SI8286DD-AS is a documented variant within Si8284 family per Skyworks ordering guide. | Direct drop-in replacement with identical electrical and mechanical specifications - validated for same automotive traction inverter and OBC use cases. | Select Si8284DD-AS only if SI8286DD-AS is unavailable; no redesign or layout change required. |
| UCC5870-Q1 | TI's 5.7 kVrms reinforced isolated driver with integrated DC-DC; lacks programmable frequency and soft-start controls; uses different pinout and requires external Miller clamp transistor. | Better suited for lower-CMTI (<100 kV/µs) industrial drives; not AEC-Q100 Grade 1 qualified for under-hood EV use. | Consider UCC5870-Q1 only for cost-sensitive non-automotive applications where 125 kV/µs CMTI and soft shutdown are not mandatory. |
Compared with SI8286DD-AS, Si8284DD-AS offers identical functionality and drop-in compatibility, while UCC5870-Q1 trades automotive qualification and advanced soft-start control for broader industrial availability - making SI8286DD-AS the optimal choice for AEC-Q100-compliant SiC FET gate drive in HEV/EV power systems.
Availability
SI8286DD-AS is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and isolated DC-DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for SI8286DD-AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and power management technologies.
The SI8286DD-AS belongs to the Si828x family of SiC-FET-ready isolated gate drivers - engineered to address the high-speed, high-reliability, and safety-critical demands of electric vehicle powertrain systems.
FAQ
What is the isolation voltage rating of the SI8286DD-AS and which safety standards does it meet?
The SI8286DD-AS provides 5.0 kVrms isolation per UL 1577 for 1 minute and is certified for reinforced insulation under EN/IEC 62368-1 (VDE), CSA, and GB4943.1-2011. This rating is validated for continuous operation in automotive traction inverters and ensures compliance with ISO 26262 ASIL-B system-level requirements when used with appropriate system-level design.
Does the SI8286DD-AS support SiC FETs with 13 V gate drive, and how is UVLO configured?
Yes, the SI8286DD-AS features a 13 V UVLO threshold (VDDB–VMID), explicitly optimized for SiC FET gate drive stability. This ensures the driver remains disabled until the secondary-side supply reaches a level sufficient to fully enhance the SiC FET, preventing partial turn-on and associated conduction losses or thermal runaway.
How does the DESAT protection in SI8286DD-AS respond to overcurrent events in SiC FETs?
The SI8286DD-AS detects desaturation via the DSAT pin with a fixed 7 V threshold and 220 mV hysteresis, responding in less than 1 µs. Upon detection, it initiates soft shutdown - discharging the gate slowly via VH - and asserts the open-drain /FLT pin low to signal the controller, enabling safe system-level fault handling without destructive dV/dt stress.
What DC-DC converter architecture does the SI8286DD-AS implement, and what external components are required?
The SI8286DD-AS uses an external-switch DC-DC controller topology, requiring an external MOSFET (driven by ESW pin), miniature transformer, Schottky rectifiers, and feedback components (VSNS, COMP). This architecture supports higher input voltages (e.g., 12 V automotive rails) and enables programmable frequency and soft-start - unlike internal-switch variants.
Is the SI8286DD-AS pin-compatible with other Si828x family members, and which variants share its 24-pin WB SOIC package?
Yes, SI8286DD-AS shares the 24-pin wide-body SOIC package and pinout with Si8283xx-AS and Si8284xx-AS variants. Specifically, Si8284DD-AS is a documented functional and mechanical equivalent per Skyworks' ordering guide - confirming full pin-to-pin and drop-in compatibility for design reuse and supply chain flexibility.
SI8286DD-AS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 50ns, 50ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 5.5ns, 8.5ns
- Current - Output High, Low:
- 2A, 4.1A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 14V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8286DD-AS FAQ
1.How can I place an order for SI8286DD-AS through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8286DD-AS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8286DD-AS reliable?
The price and inventory of SI8286DD-AS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8286DD-AS is usually 5 days.
3.What payment methods are accepted for SI8286DD-AS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8286DD-AS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8286DD-AS?
SI8286DD-AS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8286DD-AS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8286DD-AS?
For technical support, including SI8286DD-AS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8286DD-AS requirements.
6.How does Aetrix verify that SI8286DD-AS is sourced from the original manufacturer or authorized distributors?
All SI8286DD-AS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8286DD-AS meets industry standards.
7.What is the process for return or replacement of SI8286DD-AS?
All SI8286DD-AS units undergo pre-shipment inspection (PSI). If there is an issue with SI8286DD-AS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8286DD-AS part is unused and in its original packaging.
Return procedure for SI8286DD-AS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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