Skyworks Solutions Inc. SI8286DD-ISR

Overview

SI8286DD-ISR from Skyworks is a SiC FET–ready isolated gate driver with integrated DC-DC converter, designed for high-reliability motor inverters and traction systems. It delivers 4 A peak sink/source drive current, supports 13 V UVLO threshold, features desaturation detection with <1 µs fault response, and provides reinforced isolation rated at 5.0 kVrms per UL1577 - enabling robust operation in 800 V SiC-based EV power stages.

For engineers reviewing the SI8286DD-ISR datasheet, SI8286DD-ISR pinout, SI8286DD-ISR application, or SI8286DD-ISR equivalent, this page details its dual-channel isolation architecture, soft shutdown behavior, Miller clamp implementation, and compatibility with external transformer–based isolated bias supplies - all critical for IGBT/SiC half-bridge gate drive design and functional safety validation.

Technical Context

The SI8286DD-ISR implements a proprietary RF-based isolation channel with on/off keying modulation, delivering 125 kV/µs common-mode transient immunity (CMTI) and supporting up to 1 MHz PWM switching. Its integrated DC-DC controller uses external power switches and closed-loop current-mode control to generate isolated VDDB supply, with programmable frequency, soft-start, and shutdown functions enabled via SH/FC and SS pins.

On the output side, it provides separate VH and VL terminals for independent gate resistor control, a dedicated DSAT pin with 7 V desat threshold and 220 mV hysteresis, and an active Miller clamp (CLMP) tied to VMID to suppress parasitic turn-on in half-bridge topologies. The RDY pin confirms dual-side power readiness, while FLTb and RSTb support system-level fault reporting and recovery.

Key Specifications

Pinout & Package

SI8286DD-ISR is housed in a 24-pin wide-body SOIC package (WB SOIC-24) with 1.27 mm pitch, RoHS-compliant, and rated for 260 °C reflow. The package provides enhanced creepage (>8.3 mm) and clearance (>8.0 mm) for reinforced isolation in high-voltage systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with SI8284DD-ISR and UCC5870QDWJRQ1, SI8286DD-ISR offers fixed-frequency DC-DC simplicity and SiC-optimized 13 V UVLO/7 V DESAT, making it ideal for production-ready 800 V inverter platforms where layout predictability and SiC gate bias stability outweigh frequency tuning needs.

Availability

SI8286DD-ISR is available at Aetrix Electronics and suitable for electric vehicle traction inverters, industrial motor drives, and renewable energy grid-tie inverters requiring stable component supply across multi-year production cycles and automotive-grade lifecycle assurance.

Supply support for SI8286DD-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The SI828x family was engineered specifically for high-reliability SiC and IGBT gate drive in automotive traction, industrial motor control, and renewable energy systems - emphasizing integrated safety, reinforced isolation, and system-level simplification.

FAQ

What is the isolation voltage rating of SI8286DD-ISR and which safety standards does it meet?

The SI8286DD-ISR provides 5.0 kVrms reinforced isolation per UL 1577 and complies with IEC/VDE/GB 62368-1 for reinforced insulation. This rating enables direct use in 800 V DC bus applications without additional isolation barriers. The device also carries AEC-Q100 Grade 1 qualification, confirming suitability for automotive under-hood environments where long-term reliability and high-voltage stress endurance are critical. SI8286DD-ISR maintains this isolation performance across its full –40 °C to +125 °C operating range.

Does SI8286DD-ISR support SiC FETs with 13 V gate bias, and how is UVLO configured?

Yes, SI8286DD-ISR is explicitly designed for SiC FETs and features a 13 V UVLO threshold (VDDB to VMID), ensuring robust gate drive only when sufficient bias voltage is present to maintain full enhancement and avoid linear-mode operation. The UVLO hysteresis is fixed, and the circuit remains engaged until VDDB rises above the turn-on threshold. SI8286DD-ISR does not require external resistive dividers or configuration - the 13 V UVLO is factory-trimmed and guaranteed across temperature and process variation.

How does the desaturation detection work on SI8286DD-ISR, and what external components are required?

SI8286DD-ISR detects desaturation via its DSAT pin, which monitors switch VCE/VDS through an external RDSAT resistor and DDSAT diode. An internal 7 V comparator with 220 mV hysteresis triggers fault response if the sensed voltage exceeds threshold after blanking. A 220–270 pF blanking capacitor (CBL) between DSAT and VMID sets blanking time. SI8286DD-ISR integrates the current source and comparator - only RDSAT, DDSAT, and CBL are needed externally to implement full DESAT protection.

What is the role of the CLMP pin on SI8286DD-ISR, and how should it be connected?

The CLMP pin on SI8286DD-ISR enables active Miller clamping by connecting directly to VMID. During high dV/dt events (e.g., top-switch turn-on), the internal clamp circuit pulls the gate toward VMID, preventing parasitic turn-on of the bottom switch in half-bridge configurations. No external transistor is required - CLMP must be shorted to VMID, and VMID must be tied to VSSB unless a negative gate bias is intentionally used. This integrated clamp eliminates a common failure point in discrete gate drive designs.

Can SI8286DD-ISR generate its own isolated gate supply, and what transformer specifications are needed?

Yes, SI8286DD-ISR integrates a DC-DC controller that drives an external MOSFET switch (via ESW pin) to generate isolated VDDB from primary-side VDDA. It requires a custom miniature transformer with tight coupling between secondary windings to deliver dual-rail output (e.g., +15 V/–5 V). Skyworks recommends low-leakage, low-forward-voltage Schottky rectifiers and specifies typical turns ratios (e.g., 1:1:1) in AN1112. SI8286DD-ISR achieves 83% DC-DC efficiency and supports up to 24 V input without external regulators.