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Skyworks Solutions Inc. SI82E29ABC-IS1
- Part No.:
- SI82E29ABC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E29ABC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
- Payment:
- Shipping:
Inventory:1,056
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Product details
Overview
SI82E29ABC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, designed for high-side/low-side half-bridge control in SiC and GaN power stages. It features 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, 200 kV/µs CMTI, and operates with 3–20 V logic supply and 5–30 V gate drive supply. Used in onboard chargers and motor drives requiring robust noise immunity and shoot-through prevention.
For engineers reviewing the SI82E29ABC-IS1 datasheet, SI82E29ABC-IS1 pinout, SI82E29ABC-IS1 application, or SI82E29ABC-IS1 equivalent, this page delivers verified functional identity, validated SOIC-16 pin mapping, confirmed dead-time programmability, UVLO thresholds (4/8/12/15 V), and automotive-grade AEC-Q100 qualification - all critical for high-reliability power stage design.
Technical Context
The SI82E29ABC-IS1 implements capacitive silicon-dioxide (SiO₂) isolation with differential RF-modulated OOK signaling, enabling precise timing control and fault-tolerant signal transfer. Its dual-channel architecture supports independent non-inverting inputs (VIA/VIB) and a dedicated disable (DIS) input that forces both outputs low unconditionally.
It integrates programmable dead time via external resistor on DT pin (10–110 kΩ), overlap protection to prevent simultaneous conduction, and independent UVLO monitoring per supply rail (VDDI, VDDA, VDDB). Thermal shutdown triggers at TSD+ = 150 °C with 1 ms delay and resets at TSD– = 135 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, CSA 62368-1, VDE 60747-17 reinforced insulation requirements. |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side gate drive signals. |
| CMTI | >200 kV/µs - prevents false triggering in noisy high-dV/dt environments like SiC/GaN inverters. |
| Peak Output Current | 6 A sourcing/sinking - drives large gate capacitances of 100+ nC SiC FETs without external buffers. |
| Logic Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controllers without level-shifting. |
| Gate Drive Supply Range | 5–30 V - supports bipolar (±15 V) or unipolar (12/15/18 V) gate bias for optimal switching loss control. |
| UVLO Thresholds | 4 V, 8 V, 12 V, or 15 V - selectable per device variant to match gate driver supply stability margins. |
| Operating Temperature | –40 to +125 °C - qualified per AEC-Q100 Grade 1 for automotive under-hood applications. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with 1.27 mm pitch and creepage ≥8.3 mm. Reinforced isolation barrier separates logic side (pins 1–8, 12–13) from gate driver side (pins 9–11, 14–16).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Drives VOA high when asserted; CMOS-compatible with deglitch filter option. |
| VIB | Non-inverting logic input for Channel B | Drives VOB high when asserted; independent timing enables asymmetric PWM control. |
| DIS | Active-high disable control | Forces VOA and VOB low regardless of VIA/VIB state - used for fast fault shutdown. |
| DT | Dead time programming input | Resistor-to-GND sets dead time (10–110 kΩ → ~17–200 ns); tied to VDDI disables dead time. |
| VDDA / GNDA | Channel A gate driver supply and ground | Isolated 5–30 V supply path; independent UVLO prevents erratic turn-on during brownout. |
| VDDB / GNDB | Channel B gate driver supply and ground | Separate supply domain enables split-rail or bootstrap configurations without coupling. |
| VDDI / GNDI | Logic input supply and ground | 3–20 V domain with CMOS inputs; isolation barrier referenced to GNDI. |
| VOA / VOB | High-current gate drive outputs | Voltage-mode outputs with 6 A peak drive; short-circuit clamp protects against overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| Voltage Mode Drive | Output behaves as controlled voltage source - gate resistor selection directly tunes rise/fall times and EMI without loop compensation. |
| Programmable Dead Time | External resistor on DT pin sets precise inter-channel delay (17–200 ns typical), eliminating need for controller-level dead-time insertion. |
| Overlap Protection | Hardware-level detection of simultaneous VIA/VIB high states forces both outputs low - prevents shoot-through even with controller timing errors. |
| Shutdown Clamp | Active pull-down to GNDA/GNDB when VDDA/VDDB is unpowered - blocks parasitic turn-on of MOSFETs/IGBTs during power sequencing. |
| Thermal Shutdown | Integrated sensor triggers hard low output at 150 °C and holds weak low until temperature drops to 135 °C - self-resetting protection. |
| AEC-Q100 Qualified | Automotive-grade manufacturing flow with zero defects in HTOL, TC, and ESD testing - validated for 15-year automotive service life. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems using SiC half-bridges. IC Role / Device Role / Timing Role: Isolated gate driver providing independent high-side/low-side control with programmable dead time to prevent shoot-through during phase-shift modulation. Use Value: 200 kV/µs CMTI ensures reliable operation in high-noise 800 V battery domains; 6 kVRMS isolation meets IEC 62109 and UL 62368-1 safety standards. |
Use Scenario: Field-oriented control (FOC) of PMSM/induction motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering synchronized gate signals with <5 ns skew to minimize torque ripple and acoustic noise. Use Value: Independent UVLO on VDDA/VDDB prevents partial turn-on during asymmetric power supply faults; thermal shutdown protects against overload-induced junction overheating. |
| Uninterruptible Power Supply (UPS) | Photovoltaic Inverter |
Use Scenario: High-efficiency double-conversion UPS with SiC-based three-phase inverter stage. IC Role / Device Role / Timing Role: Gate driver with DIS input enabling immediate fault response (<100 ns propagation) to overcurrent events detected by external comparators. Use Value: 6 A peak drive supports fast switching of 1200 V SiC modules; reinforced isolation eliminates need for external isolation components in 1000 V DC-link designs. |
Use Scenario: Transformerless string inverters operating at 1500 V DC with leakage current constraints. IC Role / Device Role / Timing Role: Isolated driver enabling bipolar gate bias (±15 V) for enhanced SiC FET ruggedness and reduced Miller-induced false turn-on. Use Value: 1500 VRMS working voltage and 10 kV bipolar surge rating meet IEC 62109-1 and UL 1741 SB requirements for PV system safety. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8239AD-IS1 | Same Si82Ex family, but with EN (enable) instead of DIS (disable); identical pinout, specs, and isolation rating. | Preferred where active-high enable logic aligns with system controller architecture; requires no firmware change for DIS-to-EN mapping. | Select SI82E29ABC-IS1 when hardware-level fault shutdown must force outputs low on rising edge of fault signal. |
| TI UCC5390SCDW | 3.3–15 V logic supply only; 4 A peak output; 5 kVRMS isolation; no programmable dead time - fixed internal dead time (~100 ns). | Suitable for cost-sensitive industrial inverters where dead time tolerance is wide and SiC/GaN speed is moderate. | Choose SI82E29ABC-IS1 for automotive OBC or high-frequency GaN designs requiring sub-5 ns skew and adjustable dead time. |
Compared with SI8239AD-IS1, SI82E29ABC-IS1 provides faster fault response via DIS assertion; compared with UCC5390SCDW, it delivers higher drive strength, wider supply range, and precision dead-time tuning - critical for high-efficiency, high-reliability power conversion.
Availability
SI82E29ABC-IS1 is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, uninterruptible power supplies, and photovoltaic inverters requiring stable component supply across multi-year production cycles.
Supply support for SI82E29ABC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and communications markets.
The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power systems, delivering superior CMTI, lifetime stability, and integration for SiC/GaN-based switched-mode power supplies and motor controls.
FAQ
What is the isolation rating and safety certification status of the SI82E29ABC-IS1?
The SI82E29ABC-IS1 provides 6 kVRMS reinforced isolation rated for one minute and is certified to UL 1577, CSA 62368-1 (2 MOPP), VDE 60747-17, and CQC GB4943.1. Its 1500 VRMS working voltage and 10 kV bipolar surge capability make it suitable for 1500 V DC PV inverters and 800 V EV architectures. All certifications apply specifically to the SI82E29ABC-IS1 variant per Skyworks' official documentation.
How does the DIS pin function in the SI82E29ABC-IS1, and what is its propagation delay?
The DIS pin on the SI82E29ABC-IS1 is an active-high disable input that forces both VOA and VOB outputs low unconditionally, regardless of VIA/VIB states or power supply conditions. Propagation delay from DIS high to VOA/VOB low is tDID = 35 ns (max) per the datasheet. This feature enables rapid fault shutdown in safety-critical applications such as automotive OBCs, where response time must be deterministic and hardware-governed.
Can the SI82E29ABC-IS1 drive both SiC and GaN FETs, and what gate resistor guidance is provided?
Yes, the SI82E29ABC-IS1 is explicitly qualified for driving SiC MOSFETs and GaN HEMTs, with 6 A peak sourcing/sinking current and voltage-mode drive architecture. Skyworks recommends selecting gate resistors (R5/R6/R12/R15) based on target rise/fall times and FET gate charge (Qg); equations in Section 5.1 of the datasheet calculate peak currents using RON+ and RON– values. For 100 nC SiC FETs, typical Rg = 2.2–4.7 Ω achieves <50 ns transitions while limiting dV/dt-induced EMI.
What is the purpose and configuration method of the DT pin on the SI82E29ABC-IS1?
The DT pin on the SI82E29ABC-IS1 programs dead time between VOA and VOB transitions using an external resistor (RDT) from DT to GNDI. RDT = 10–110 kΩ yields ~17–200 ns typical dead time. Connecting DT to VDDI disables dead time and overlap protection, converting the device into a dual independent driver. A 0.1 µF ceramic capacitor placed near DT improves noise immunity - a requirement specified in the datasheet for stable operation.
Does the SI82E29ABC-IS1 include thermal protection, and how does it behave during overtemperature events?
Yes, the SI82E29ABC-IS1 integrates per-channel thermal sensors. When junction temperature exceeds TSD+ = 150 °C, outputs are driven hard low within 1 ms. If temperature remains above TSD– = 135 °C after 1 ms, outputs transition to weak-low state and remain there until temperature falls below TSD–. This two-threshold hysteresis prevents oscillation during thermal transients and ensures safe recovery before resuming normal operation - a behavior confirmed in Section 4.7 of the SI82E29ABC-IS1 datasheet.
SI82E29ABC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E29ABC-IS1 FAQ
1.How can I place an order for SI82E29ABC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E29ABC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E29ABC-IS1 reliable?
The price and inventory of SI82E29ABC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E29ABC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82E29ABC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E29ABC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E29ABC-IS1?
SI82E29ABC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E29ABC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E29ABC-IS1?
For technical support, including SI82E29ABC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E29ABC-IS1 requirements.
6.How does Aetrix verify that SI82E29ABC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82E29ABC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E29ABC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82E29ABC-IS1?
All SI82E29ABC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E29ABC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E29ABC-IS1 part is unused and in its original packaging.
Return procedure for SI82E29ABC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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