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Skyworks Solutions Inc. SI82E29ABE-IS3R
- Part No.:
- SI82E29ABE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E29ABE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:4,541
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Product details
Overview
SI82E29ABE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output current per channel, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It drives SiC/GaN FETs in half-bridge topologies for onboard chargers and motor inverters.
For engineers reviewing the SI82E29ABE-IS3R datasheet, SI82E29ABE-IS3R pinout, SI82E29ABE-IS3R application, or SI82E29ABE-IS3R equivalent, key selection criteria include its disable-input (DIS) logic interface, programmable dead time via external resistor, UVLO thresholds at 4/8/12/15 V, and SOIC-16 narrow-body package with 8 mm creepage.
Technical Context
The SI82E29ABE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling 200 kV/µs CMTI and stable timing across temperature. Its functional block includes independent UVLO monitors per supply rail (VDDI, VDDA, VDDB), thermal shutdown with 1 ms fault hold, and active pull-down clamps on unpowered outputs.
This variant uses a DIS (active-high disable) input instead of EN, forcing both outputs low when asserted-critical for fast fault response in automotive traction inverters. The DT pin supports resistor-programmed dead time (10–110 kΩ → ~17–110 ns), with overlap protection that forces simultaneous low outputs if both inputs go high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577), reinforced insulation per IEC 62368-1 & IEC 60747-17 |
| Output Drive Strength | 6 A peak sourcing/sinking per channel-supports fast switching of 100+ A SiC MOSFETs with external gate resistors |
| Channel Skew | <5 ns-enables precise timing control in high-frequency half-bridge operation up to 2 MHz |
| Input Supply Range | 3–20 V CMOS-compatible-interfaces directly with MCU GPIOs or isolated level-shifted controllers |
| Gate Supply Range | 5–30 V per channel-supports bipolar gate drive (±15 V) or unipolar (12 V) configurations |
| CMTI | >200 kV/µs-prevents false triggering in noisy high-dV/dt environments like EV power stages |
| Operating Temp | –40 to +125 °C-qualified to AEC-Q100 Grade 1 for under-hood automotive use |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with 8.0 mm creepage and 10.16 mm clearance; RoHS-compliant, halogen-free, and qualified for automotive production.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Directly controls VOA output state; Schmitt-triggered, deglitch-filtered CMOS input |
| VIB | Non-inverting logic input for Channel B | Directly controls VOB output state; independent of VIA, enabling asymmetric PWM control |
| DIS | Active-high disable input | Unconditionally forces VOA and VOB low within tDID (max 120 ns); used for system-level fault shutdown |
| DT | Dead time programming terminal | Resistor-to-GND sets dead time (17–110 ns); tied to VDDI disables dead time and overlap protection |
| VDDA / GNDA | Power and ground for Channel A output stage | Independent supply enables bootstrap or isolated powering of high-side gate driver |
| VDDB / GNDB | Power and ground for Channel B output stage | Allows separate voltage rails (e.g., 15 V for high-side, 12 V for low-side) and independent UVLO |
| VDDI / GNDI | Digital logic supply and reference | 3–20 V input domain; UVLO threshold set at 4/8/12/15 V depending on variant |
| VOA / VOB | High-current gate drive outputs | Voltage-mode outputs with 6 A peak capability; short-circuit clamped to VDDA/B + ~0.7 V |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Dead Time | Resistor-adjustable (10–110 kΩ) yields 17–110 ns delay between VOA/VOB transitions-prevents shoot-through in half-bridge FETs |
| Overlap Protection | Hardware-enforced immediate low-state on both outputs if VIA and VIB simultaneously go high-eliminates need for external logic |
| UVLO Flexibility | Four factory-set thresholds (4/8/12/15 V) per supply rail-allows optimization for 3.3 V logic control or 12 V gate bias stability |
| Shutdown Clamp | Active pull-down on unpowered outputs (GNDA/GNDB floating)-prevents parasitic turn-on of FETs during power sequencing |
| Thermal Fault Handling | Auto-recovering shutdown: hard low until T < TSD− (145 °C), then weak low until full cooldown-avoids latch-up in transient overloads |
Applications
| Onboard Charger (OBC) | Industrial Motor Inverter |
|---|---|
|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems operating at 10–100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side/low-side gate driver for SiC half-bridge power stage; provides synchronized, skew-controlled drive with programmable dead time. Use Value: Enables >97% efficiency at 11 kW OBC using 1200 V SiC MOSFETs while meeting CISPR-25 Class 5 EMI limits via controlled slew rate and CMTI immunity. |
Use Scenario: Variable-frequency drive for HVAC compressors and industrial pumps requiring 0–20 kHz PWM with torque ripple <2%. IC Role / Device Role / Timing Role: Isolated dual gate driver controlling IGBTs in three-phase inverter leg; DIS input interfaces with safety PLC for STO (Safe Torque Off). Use Value: AEC-Q100 qualification and 1500 VRMS working voltage ensure reliability in harsh factory environments with 4 kV ESD and 10 kV surge transients. |
| Renewable Energy Inverter | UPS Half-Bridge Stage |
|
Use Scenario: Grid-tied solar inverter DC/AC stage with MPPT tracking and reactive power support at 16–22 kHz. IC Role / Device Role / Timing Role: Dual-channel isolated driver for GaN HEMTs in totem-pole PFC and inverter legs; DT pin configured for 50 ns dead time. Use Value: 200 kV/µs CMTI prevents misfiring during lightning-induced common-mode noise on rooftop PV arrays. |
Use Scenario: Double-conversion UPS delivering clean sine-wave output during mains failure with <10 ms switchover. IC Role / Device Role / Timing Role: Gate driver for high-efficiency half-bridge in DC/AC inverter stage; UVLO set to 12 V to maintain operation during brownouts. Use Value: Dual independent UVLO monitors allow continued operation of low-side driver even if high-side supply dips-improving system uptime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SIL1225AD-IM | Single-input PWM mode only; no VIA/VIB dual-input option; 4 A peak drive; 3.75 kVRMS isolation | Limited to synchronous half-bridge control; lacks independent channel enable/disable | Choose SIL1225AD-IM only if design uses single PWM signal and lower drive strength suffices |
| UCC5390SCD | EN input (not DIS); 10 A peak drive; 5 kVRMS isolation; no programmable dead time-fixed internal delay | Better for high-current Si IGBTs but less flexible for shoot-through-sensitive SiC/GaN designs | Select UCC5390SCD when higher peak current is required and fixed dead time is acceptable |
Compared with SI82E29ABE-IS3R, SIL1225AD-IM offers lower cost but sacrifices dual-input flexibility and isolation robustness, while UCC5390SCD delivers higher drive strength but removes dead time adjustability-making SI82E29ABE-IS3R optimal for precision-controlled SiC half-bridges demanding skew <5 ns and field-programmable timing margins.
Availability
SI82E29ABE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, industrial motor inverters, renewable energy inverters, and UPS systems requiring stable component supply, automotive-grade reliability, and long-term lifecycle support.
Supply support for SI82E29ABE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in electric vehicle powertrains, industrial motor drives, and renewable energy systems-emphasizing CMTI, skew control, and AEC-Q100 compliance.
FAQ
What is the function of the DIS pin on the SI82E29ABE-IS3R?
The DIS (Disable) pin on the SI82E29ABE-IS3R is an active-high input that unconditionally forces both VOA and VOB outputs low within 120 ns (tDID max), regardless of input states or supply conditions. This feature enables rapid fault shutdown in safety-critical applications such as automotive traction inverters. When DIS is deasserted (logic low), normal operation resumes after tEID (max 150 ns). SI82E29ABE-IS3R uses DIS instead of EN, distinguishing it from Si82E39 variants.
Does the SI82E29ABE-IS3R support bootstrap power for the high-side gate driver?
Yes, the SI82E29ABE-IS3R supports bootstrap powering of the high-side channel (VDDA/GNDA) via an external diode and capacitor, as confirmed in Figure 20 of the datasheet. VDDA can be supplied either from an isolated DC/DC converter or from the low-side supply (VDDB) through a bootstrap network. This allows cost-effective implementation in half-bridge topologies without requiring two isolated supplies. SI82E29ABE-IS3R's independent UVLO on VDDA ensures reliable startup even with bootstrap voltage droop.
What UVLO thresholds are implemented in the SI82E29ABE-IS3R?
The SI82E29ABE-IS3R features factory-configured UVLO thresholds of 4 V, 8 V, 12 V, and 15 V on VDDI, VDDA, and VDDB rails-each independently monitored. These thresholds prevent erroneous switching during brownouts or startup transients. For example, VDDI UVLO at 12 V ensures logic integrity when powered from a 12 V system rail, while VDDA UVLO at 8 V protects SiC FETs from partial turn-on. SI82E29ABE-IS3R does not support user-adjustable UVLO; selection is fixed at manufacture per ordering code.
How is dead time programmed on the SI82E29ABE-IS3R?
Dead time on the SI82E29ABE-IS3R is programmed by connecting an external resistor (RDT) between the DT pin and GNDI. RDT values from 10 kΩ to 110 kΩ yield typical dead times from 17 ns to 110 ns, calculated using tDT = 1.73 × RDT + 5.74 (RDT in kΩ). A 0.1 µF ceramic capacitor must be placed in parallel with RDT near the DT pin for noise immunity. Connecting DT to VDDI disables dead time insertion and overlap protection, converting SI82E29ABE-IS3R into a dual independent driver.
Is the SI82E29ABE-IS3R qualified for automotive applications?
Yes, the SI82E29ABE-IS3R is AEC-Q100 Grade 1 qualified (–40 to +125 °C) and built using automotive-specific manufacturing flows. It carries UL, VDE, CSA, and CQC safety certifications for reinforced insulation, including 6 kVRMS isolation and 1500 VRMS working voltage. These qualifications make SI82E29ABE-IS3R suitable for EV onboard chargers, battery management systems, and ADAS power stages where zero-defect reliability is mandatory.
SI82E29ABE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E29ABE-IS3R FAQ
1.How can I place an order for SI82E29ABE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E29ABE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E29ABE-IS3R reliable?
The price and inventory of SI82E29ABE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E29ABE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E29ABE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E29ABE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E29ABE-IS3R?
SI82E29ABE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E29ABE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E29ABE-IS3R?
For technical support, including SI82E29ABE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E29ABE-IS3R requirements.
6.How does Aetrix verify that SI82E29ABE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E29ABE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E29ABE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E29ABE-IS3R?
All SI82E29ABE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E29ABE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E29ABE-IS3R part is unused and in its original packaging.
Return procedure for SI82E29ABE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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