Skyworks Solutions Inc. SI82E29ACC-IS1R
- Part No.:
- SI82E29ACC-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E29ACC-IS1R.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
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Product details
Overview
SI82E29ACC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is used in half-bridge motor drives and SiC/GaN-based inverters requiring precise dead-time control and shoot-through prevention.
For engineers reviewing the SI82E29ACC-IS1R datasheet, SI82E29ACC-IS1R pinout, SI82E29ACC-IS1R application, or SI82E29ACC-IS1R equivalent, this page delivers verified technical context, validated pin functions, confirmed safety certifications (UL 1577, VDE 60747-17), real-world timing behavior, and two rigorously confirmed alternative parts for high-reliability power stage design.
Technical Context
The SI82E29ACC-IS1R implements capacitive silicon-dioxide (SiO₂) isolation with differential RF-modulated OOK signaling, enabling 200 kV/μs CMTI and stable timing across temperature and lifetime. Its dual-channel architecture supports independent non-inverting inputs (VIA/VIB) and features integrated dead time control via external resistor on DT pin, with overlap protection triggered by simultaneous high inputs.
It includes independent UVLO monitoring on VDDI (4 V threshold), VDDA (8 V), and VDDB (8 V), plus thermal shutdown at 150 °C and active shutdown clamp on unpowered outputs. The device uses voltage-mode drive with external gate resistors to tune switching speed, overshoot, and EMI - no current-source topology or internal current limiting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577), reinforced insulation per VDE 60747-17 and CSA 62368-1 |
| Channel-to-Channel Skew | <5 ns - ensures synchronized switching in half-bridge topologies without timing-induced shoot-through |
| Peak Output Current | ±6 A - sufficient to drive high-Qg SiC FETs and IGBTs at fast dV/dt without external buffers |
| CMTI | >200 kV/μs - maintains signal integrity in noisy high-dV/dt environments like motor drives and inverters |
| Logic Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controllers without level-shifting |
| Gate Driver Supply Range | 5–30 V - supports bipolar gate drive (±15 V) and unipolar configurations for MOSFET/SiC/GaN |
| Operating Temperature | –40 to +125 °C - qualified per AEC-Q100 Grade 1 for automotive under-hood use |
| UVLO Thresholds | VDDI: 4 V (typ), VDDA/VDDB: 8 V (typ) - prevents erratic switching during brown-out or startup |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage ≥8.3 mm and clearance ≥8.0 mm; RoHS-compliant, halogen-free, and qualified for automotive production.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Directly controls VOA output state; CMOS-compatible, Schmitt-triggered, deglitch-enabled |
| VIB | Non-inverting logic input for Channel B | Directly controls VOB output state; independent of VIA, enabling asymmetric PWM or phase-shifted control |
| DIS | Active-high disable input | Forces VOA and VOB low unconditionally; used for fault shutdown without affecting controller logic |
| DT | Dead time programming terminal | Resistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); tied to VDDI disables dead time for dual-driver mode |
| VDDA / GNDA | Channel A gate driver supply and ground | Independent 5–30 V supply domain; enables bootstrap or isolated supply for high-side operation |
| VDDB / GNDB | Channel B gate driver supply and ground | Independent 5–30 V supply domain; allows separate biasing for low-side or floating configurations |
| VDDI / GNDI | Logic input supply and ground | 3–20 V domain isolated from gate supplies; supports mixed-voltage system interfacing |
| VOA / VOB | High-current gate driver outputs | Voltage-mode outputs capable of ±6 A peak; include short-circuit clamp and shutdown clamp for robustness |
Key Features
| Feature | Design Value |
|---|---|
| Capacitive SiO₂ Isolation | Enables 200 kV/μs CMTI and <5 ns skew - superior noise immunity and timing stability vs. optocouplers |
| Programmable Dead Time | External resistor on DT pin sets 18–200 ns dead time; overlap protection prevents shoot-through on simultaneous inputs |
| Voltage-Mode Drive | Output current shaped via external gate resistors - enables precise tuning of dv/dt, EMI, and gate overshoot |
| Independent UVLO Monitoring | VDDI (4 V), VDDA (8 V), VDDB (8 V) - ensures safe operation even if one supply drops while others remain active |
| Shutdown Clamp | Active pull-down on unpowered outputs (GNDA/GNDB) - prevents parasitic turn-on of FETs during power sequencing |
| AEC-Q100 Qualified | Grade 1 (–40 to +125 °C) with automotive-specific manufacturing flow - suitable for EPS, OBC, and traction inverter modules |
Applications
| Motor Drives | Power Inverters |
|---|---|
|
Use Scenario: Three-phase BLDC or PMSM motor control in HVAC compressors and industrial servo systems. IC Role / Device Role / Timing Role: High-side/low-side gate driver for half-bridge legs; enforces dead time to prevent shoot-through during PWM commutation. Use Value: <5 ns skew and 200 kV/μs CMTI ensure clean switching across all phases under high dv/dt bus transients. |
Use Scenario: 400 V–800 V DC-AC conversion in solar string inverters and energy storage systems. IC Role / Device Role / Timing Role: Isolated gate driver for SiC MOSFET half-bridges; provides reinforced 6 kVRMS isolation between control and power domains. Use Value: 6 kVRMS UL/VDE certification and 1500 VRMS working voltage meet IEC 62109 and UL 1741 safety requirements. |
| Onboard Chargers | Uninterruptible Power Supplies |
|
Use Scenario: Bidirectional AC/DC and DC/DC stages in EV onboard chargers (OBC) with GaN FETs. IC Role / Device Role / Timing Role: Dual-channel isolated driver for totem-pole PFC and isolated DC-DC LLC primary side. Use Value: 3–20 V logic supply range interfaces directly with 3.3 V MCU or 15 V FPGA; 6 A drive supports fast GaN switching. |
Use Scenario: Double-conversion UPS systems with IGBT-based inverters delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Robust gate driver for high-current IGBT half-bridges; includes thermal shutdown and UVLO for fault resilience. Use Value: AEC-Q100 qualification and 125 °C operation ensure reliability in continuous-duty, thermally constrained UPS enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8220BD-D-IS | Single-input, dual-output (PWM mode only); no VIA/VIB independent control; 4 A peak drive; 5 kVRMS isolation | Limited to synchronous half-bridge control; unsuitable for phase-shifted or asymmetric PWM topologies | Select when cost-sensitive designs require basic PWM-driven half-bridge operation without independent channel control |
| TI UCC21520CDW | 3.3–5 V logic supply only; 4 A peak drive; 5.7 kVRMS isolation; no deglitch filter option; different pinout | Requires level-shifting for >5 V controllers; lower CMTI (100 kV/μs); not AEC-Q100 qualified | Choose for industrial SMPS where 3.3/5 V MCU interface is fixed and automotive qualification is unnecessary |
Compared with SI82E29ACC-IS1R, SI8220BD-D-IS lacks independent input control and drive strength for SiC/GaN, while UCC21520CDW restricts logic voltage range and omits automotive qualification - making SI82E29ACC-IS1R the only option supporting 3–20 V logic, 6 A drive, AEC-Q100, and full VIA/VIB flexibility in one package.
Availability
SI82E29ACC-IS1R is available at Aetrix Electronics and suitable for motor drives, power inverters, onboard chargers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E29ACC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in automotive and industrial power electronics, emphasizing CMTI robustness, timing precision, and safety certification compliance over generic isolation performance.
FAQ
What is the isolation voltage rating of the SI82E29ACC-IS1R?
The SI82E29ACC-IS1R is safety-certified for 6 kVRMS isolation for one minute per UL 1577, with reinforced insulation per VDE 60747-17, CSA 62368-1, and CQC GB4943.1. Its working voltage is rated at 1500 VRMS, and it withstands 10 kV bipolar surge - all verified in the official Skyworks datasheet revision 206857C.
Does the SI82E29ACC-IS1R support both high-side/low-side and dual independent configurations?
Yes, the SI82E29ACC-IS1R is configured as a high-side/low-side driver with independent VIA and VIB inputs. When the DT pin is tied to VDDI, dead time and overlap protection are disabled, allowing it to operate as a dual independent driver - confirmed in Section 4.5 and Figure 14 of the SI82E29 datasheet.
What are the UVLO thresholds for the SI82E29ACC-IS1R logic and gate supplies?
The SI82E29ACC-IS1R has three independent UVLO monitors: VDDI enters UVLO at ≤4.0 V (typ) and exits at >4.3 V; VDDA and VDDB each enter UVLO at ≤8.0 V (typ) and exit at >8.3 V. These values are specified in Table 7 and Section 4.3 of the official datasheet.
Can the SI82E29ACC-IS1R drive SiC or GaN FETs effectively?
Yes, the SI82E29ACC-IS1R delivers ±6 A peak output current and supports 5–30 V gate supply - enabling direct drive of high-input-capacitance SiC MOSFETs and GaN HEMTs. Its <5 ns skew and >200 kV/μs CMTI prevent timing errors and false triggering in fast-switching applications, as documented in the Applications section and Figure 20.
Is the SI82E29ACC-IS1R qualified for automotive applications?
Yes, the SI82E29ACC-IS1R is AEC-Q100 Grade 1 qualified (–40 to +125 °C) and manufactured using automotive-specific process flows. It carries UL, VDE, CSA, and CQC safety certifications required for EPS, OBC, and traction inverter use - explicitly stated in the "Automotive grade is available" section of the datasheet.
SI82E29ACC-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
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- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
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- Grade:
- -
- Qualification:
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- Operating Temperature:
- -
- Mounting Type:
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- Supplier Device Package:
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- Approval Agency:
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SI82E29ACC-IS1R FAQ
1.How can I place an order for SI82E29ACC-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E29ACC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E29ACC-IS1R reliable?
The price and inventory of SI82E29ACC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E29ACC-IS1R is usually 5 days.
3.What payment methods are accepted for SI82E29ACC-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E29ACC-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E29ACC-IS1R?
SI82E29ACC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E29ACC-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E29ACC-IS1R?
For technical support, including SI82E29ACC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E29ACC-IS1R requirements.
6.How does Aetrix verify that SI82E29ACC-IS1R is sourced from the original manufacturer or authorized distributors?
All SI82E29ACC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E29ACC-IS1R meets industry standards.
7.What is the process for return or replacement of SI82E29ACC-IS1R?
All SI82E29ACC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E29ACC-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E29ACC-IS1R part is unused and in its original packaging.
Return procedure for SI82E29ACC-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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