Skyworks Solutions Inc. SI82E29AEE-IS3R
- Part No.:
- SI82E29AEE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E29AEE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:

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Product details
Overview
SI82E29AEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and disable (DIS) control logic. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN MOSFETs and IGBTs in half-bridge power stages of onboard chargers and motor drives.
For engineers reviewing the SI82E29AEE-IS3R datasheet, SI82E29AEE-IS3R pinout, SI82E29AEE-IS3R application, or SI82E29AEE-IS3R equivalent, this page provides verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed DIS-enabled truth table behavior, and real-world dead time programming guidance using external RDT.
Technical Context
The SI82E29AEE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling between input and output domains. Its dual independent CMOS inputs (VIA, VIB) feed separate isolated driver channels, each with programmable UVLO thresholds (4/8/12/15 V), active shutdown clamp, and thermal shutdown at 150 °C.
It operates with 3–20 V logic supply (VDDI) and 5–30 V gate supplies (VDDA/VDDB), supports unipolar/bipolar output voltages, and uses voltage-mode drive with external gate resistors to tune switching speed and overshoot. Dead time is set via resistor on DT pin (10–110 kΩ), and overlap protection forces both outputs low during simultaneous high inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute; enables reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel-to-Channel Skew | <5 ns; ensures precise timing alignment between high-side and low-side gate signals in half-bridge topologies. |
| CMTI | >200 kV/µs; prevents false triggering under fast transient common-mode noise in high-dV/dt power systems. |
| Peak Output Current | 6 A sourcing/sinking; drives high-gate-charge SiC FETs and IGBTs without external buffers. |
| UVLO Thresholds | Configurable at 4 V, 8 V, 12 V, or 15 V per supply rail; prevents erratic switching during brown-out conditions. |
| Operating Temperature | –40 to +125 °C; qualified per AEC-Q100 Grade 1 for automotive powertrain and charging applications. |
| Package | Narrow-body SOIC-16 (7.5 mm width); meets creepage/clearance requirements for 1500 VRMS working voltage. |
Pinout & Package
Narrow-body 16-pin SOIC package (7.5 mm width) with 1.27 mm pitch; creepage ≥8.3 mm, clearance ≥7.8 mm per IEC 60664-1.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Drives VOA high when asserted; CMOS-compatible, Schmitt-triggered, deglitch-filtered. |
| VIB | Non-inverting logic input for Channel B | Drives VOB high when asserted; independent timing path from VIA, enabling dual independent PWM control. |
| DIS | Active-high disable control | Unconditionally pulls VOA and VOB low when high; overrides all input states for fault-safe shutdown. |
| DT | Dead time programming terminal | Resistor to GNDI sets dead time (10–110 kΩ → ~18–200 ns); connect to VDDI to disable dead time and overlap protection. |
| VDDI | Logic input supply | 3–20 V range; powers internal digital logic, isolation modulator, and input receivers. |
| GNDI | Logic input ground | Reference for VDDI, VIA, VIB, DIS, DT; galvanically isolated from GNDA/GNDB. |
| VDDA | Gate driver A supply | 5–30 V; powers high-side or universal Channel A output stage; includes UVLO monitoring. |
| GNDA | Gate driver A ground | Reference for VOA; isolated from GNDI and GNDB; enables high-side floating operation. |
| VDDB | Gate driver B supply | 5–30 V; powers low-side or universal Channel B output stage; independent UVLO threshold. |
| GNDB | Gate driver B ground | Reference for VOB; isolated from GNDI and GNDA; supports split-rail or bootstrap configurations. |
| VOA | Channel A output | Voltage-source driver with 6 A peak capability; includes short-circuit clamp to VDDA and shutdown clamp to GNDA. |
| VOB | Channel B output | Voltage-source driver with 6 A peak capability; features identical clamping and thermal protection as VOA. |
| VDDI (Pin 12) | Secondary logic supply connection | Duplicate VDDI pin for improved decoupling and reduced supply impedance in high-noise environments. |
| NC (Pins 11,13) | No-connect terminals | Internally unconnected; must remain floating-no external connection permitted. |
Key Features
| Feature | Design Value |
|---|---|
| Universal dual-input topology | Independent VIA/VIB control enables asymmetric PWM, phase-shifted converters, and motor phase control without external logic. |
| Programmable dead time with overlap protection | External RDT sets precise inter-channel delay; simultaneous high inputs force both outputs low to prevent shoot-through. |
| Voltage-mode gate drive | Output current shaped by external gate resistors-not fixed-current sink/source-enabling optimized dV/dt control and EMI reduction. |
| Robust fault handling | Integrated shutdown clamp (active pull-down when unpowered), short-circuit clamp to VDDA/B, and thermal shutdown at 150 °C. |
| AEC-Q100 Grade 1 qualification | Validated for automotive power electronics including onboard chargers, traction inverters, and DC-DC converters. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC-based totem-pole PFC and isolated DC-DC stages. IC Role / Device Role / Timing Role: Isolated dual gate driver controlling high-side/low-side SiC FETs in interleaved half-bridges; manages dead time to prevent shoot-through during zero-voltage switching transitions. Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure reliable operation across 1000 V bus transients; <5 ns skew maintains precise ZVS timing across temperature. |
Use Scenario: Field-oriented control (FOC) of 3-phase PMSM/induction motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Universal configuration drives three half-bridges (six total FETs) via three SI82E29AEE-IS3R units; independent VIA/VIB inputs enable individual phase timing adjustment. Use Value: Configurable UVLO (8 V/12 V) prevents erratic commutation during line dips; –40 to +125 °C rating supports sealed motor enclosure environments. |
| Renewable Energy Inverter | Uninterruptible Power Supply (UPS) |
Use Scenario: Grid-tied solar string inverters using SiC MOSFETs in 3-level NPC or T-type topologies. IC Role / Device Role / Timing Role: Controls outer and inner switches in multi-level bridge arms; DIS input synchronizes shutdown across all drivers during anti-islanding detection. Use Value: 6 A peak drive sustains fast switching of high-Qg SiC devices at 100 kHz; reinforced insulation meets IEC 62109 safety requirements for PV systems. |
Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter/rectifier stages and battery backup. IC Role / Device Role / Timing Role: Drives IGBTs in high-power inverter leg; DT pin configured for 100 ns dead time to accommodate IGBT tail current. Use Value: 1500 VRMS working voltage supports 600 VAC output designs; AEC-Q100 qualification ensures long-term reliability in 24/7 operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8239AD-D-ISR | Same SOIC-16 NB package, but enable (EN) input instead of DIS; identical isolation, skew, and drive strength. | Requires inverted control logic for fault shutdown; no change to gate resistor network or PCB layout. | Select when system controller asserts active-high enable rather than active-high disable for safety interlocks. |
| TI UCC5390SCD | 3.3/5 V logic compatible (vs. 3–20 V CMOS), lower 4 A peak drive, 5 kVRMS isolation, different pinout (SOIC-16 WB). | Requires level-shifting for 15 V logic interfaces; insufficient drive for >100 nC SiC FETs at >100 kHz. | Consider only for cost-sensitive industrial SMPS with legacy 5 V controllers and low-Qg MOSFETs. |
Compared with SI82E29AEE-IS3R, SI8239AD-D-ISR offers identical performance with inverted control polarity, while UCC5390SCD trades isolation robustness, drive strength, and input flexibility for lower cost and TI ecosystem integration-making SI82E29AEE-IS3R optimal for high-reliability SiC/GaN systems demanding wide VDDI range and proven automotive qualification.
Availability
SI82E29AEE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, renewable energy inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and reinforced isolation certification.
Supply support for SI82E29AEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and communications markets.
The Si82Ex family was designed specifically for high-efficiency, high-reliability power conversion systems using wide-bandgap semiconductors-delivering silicon-isolated gate drivers that replace optocouplers with superior CMTI, lifetime, and temperature stability.
FAQ
What is the function of the DT pin on the SI82E29AEE-IS3R?
The DT pin on the SI82E29AEE-IS3R programs dead time between VOA and VOB transitions using an external resistor to GNDI (10–110 kΩ). This sets typical delays from ~18 ns to 200 ns and activates overlap protection. Connecting DT to VDDI disables both functions, allowing pure dual-driver operation. The SI82E29AEE-IS3R uses this pin to prevent shoot-through in half-bridge circuits without requiring external logic.
Does the SI82E29AEE-IS3R support bipolar gate drive voltages?
Yes, the SI82E29AEE-IS3R supports unipolar (0 to VDDA/VDDB) and bipolar (–VEE to VDDA/VDDB) output configurations. By referencing GNDA/GNDB to a negative rail or using external level-shifting circuitry, designers can implement negative turn-off bias for enhanced IGBT/SiC FET robustness. The SI82E29AEE-IS3R's voltage-mode architecture and independent supply rails make this implementation straightforward.
How does the DIS input behave during UVLO conditions on the SI82E29AEE-IS3R?
When VDDI is below its UVLO threshold (e.g., <4 V), the SI82E29AEE-IS3R ignores the DIS input state-the outputs VOA and VOB remain low regardless of DIS logic level. Only after VDDI rises above the UVLO threshold does DIS regain control. This ensures fail-safe behavior during power-up/down sequences, and the SI82E29AEE-IS3R maintains this behavior across its full –40 to +125 °C operating range.
Can the SI82E29AEE-IS3R drive GaN HEMTs with fast switching requirements?
Yes, the SI82E29AEE-IS3R is explicitly validated for GaN FETs: its <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 A peak drive enable clean 100+ kHz switching of high-speed GaN devices. The voltage-mode output allows precise dV/dt tuning via gate resistors, and the shutdown clamp prevents parasitic turn-on during bootstrap capacitor recharge-critical for reliable GaN operation in totem-pole PFC stages.
What safety certifications apply to the SI82E29AEE-IS3R?
The SI82E29AEE-IS3R carries UL 1577 recognition (6 kVRMS, 1 min), VDE 60747-17 (reinforced insulation), CSA 62368-1 (reinforced), CSA 60601-1 (2 MOPP), and CQC GB4943.1 approvals. These certifications validate its use in medical, industrial, and automotive equipment where reinforced isolation and creepage/clearance compliance are mandatory-directly supporting system-level safety certification for the SI82E29AEE-IS3R's target applications.
SI82E29AEE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E29AEE-IS3R FAQ
1.How can I place an order for SI82E29AEE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E29AEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E29AEE-IS3R reliable?
The price and inventory of SI82E29AEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E29AEE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E29AEE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E29AEE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E29AEE-IS3R?
SI82E29AEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E29AEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E29AEE-IS3R?
For technical support, including SI82E29AEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E29AEE-IS3R requirements.
6.How does Aetrix verify that SI82E29AEE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E29AEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E29AEE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E29AEE-IS3R?
All SI82E29AEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E29AEE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E29AEE-IS3R part is unused and in its original packaging.
Return procedure for SI82E29AEE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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