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Skyworks Solutions Inc. SI82E39ABC-IS1R

Part No.:
SI82E39ABC-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
-
Datasheet:
AetrixSI82E39ABC-IS1R.pdf
Description:
3.75 KV 2-CHANNEL ISOLATED VALUE
Quantity:
Payment:
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Inventory:4,377

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Product details

Overview

SI82E39ABC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, designed for high-side/low-side half-bridge control in SiC and GaN power stages. It features 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, CMOS inputs, and programmable dead time via external resistor. It drives power switches in onboard chargers and motor inverters requiring robust noise immunity and precise timing.

For engineers reviewing the SI82E39ABC-IS1R datasheet, SI82E39ABC-IS1R pinout, SI82E39ABC-IS1R application, or SI82E39ABC-IS1R equivalent, key selection criteria include its 6 A drive strength, 200 kV/µs CMTI, universal/high-side-low-side pinout flexibility, automotive-grade AEC-Q100 qualification, and support for 3–20 V logic supply with UVLO options at 4/8/12/15 V.

Technical Context

The SI82E39ABC-IS1R implements capacitive silicon-dioxide (SiO₂) isolation with differential RF-modulated OOK signaling, enabling high fault tolerance and low propagation delay variation across temperature and lifetime. Its dual-channel architecture supports both independent input (VIA/VIB) and PWM-input modes, with configurable EN/DT pins for enable control and dead-time programming.

It integrates independent undervoltage lockout (UVLO) on VDDI, VDDA, and VDDB rails, thermal shutdown with hysteresis, short-circuit clamping to VDDA/B, and active pull-down shutdown clamps on unpowered outputs - all operating within –40 to +125 °C ambient range and supporting 1500 VRMS working voltage.

Key Specifications

ParameterValue and Actual Design Meaning
Isolation Rating6 kVRMS for 1 minute (UL 1577, VDE 60747-17, CSA 62368-1)
Channel-to-Channel Skew<5 ns - ensures synchronized switching in half-bridge topologies to prevent shoot-through
CMTI>200 kV/µs - maintains signal integrity in high-dV/dt SiC/GaN environments
Peak Output Current6 A sourcing/sinking - directly drives high-gate-charge SiC FETs without external buffers
Logic Supply Range3–20 V - compatible with 3.3 V, 5 V, and 15 V controller interfaces
Gate Supply Range5–30 V - supports 12 V and 15 V gate bias for optimal Rds(on) and switching loss trade-offs
Operating Temperature–40 to +125 °C - qualified for automotive under-hood and industrial motor drive environments
UVLO ThresholdsConfigurable at 4 V, 8 V, 12 V, or 15 V - prevents erratic switching during brown-out conditions

Pinout & Package

Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage-optimized layout for reinforced insulation. Pinout matches Si82E39x Universal configuration with Enable (EN) input.

Pin/TerminalCircuit RoleDesign Meaning
VIANon-inverting logic input for Channel ADirectly controls VOA output state; high noise immunity via Schmitt trigger and deglitch filter
VIBNon-inverting logic input for Channel BDirectly controls VOB output state; independent of VIA for dual-drive operation
ENActive-high enable controlAsserting EN = high enables normal operation; deasserting forces VOA/VOB low unconditionally
DTDead time programming inputResistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); tied to VDDI disables dead time
VDDILogic input supply3–20 V rail powering internal digital circuitry and isolation modulator
GNDILogic input groundReference for all digital inputs; galvanically isolated from GNDA/GNDB
VDDA / GNDAChannel A gate driver supply/ground5–30 V isolated supply for high-side or low-side output stage; includes UVLO and clamp
VDDB / GNDBChannel B gate driver supply/groundIndependent 5–30 V supply with per-channel UVLO, thermal shutdown, and shutdown clamp
VOA / VOBIsolated gate driver outputsVoltage-mode outputs with 6 A peak drive; short-circuit clamped to VDDA/B
NCNo connectionPins 12, 13, and 16 are unconnected die pads - must remain floating

Key Features

FeatureDesign Value
Voltage Mode DriveOutput current controlled by external gate resistors - enables precise tuning of dV/dt, EMI, and overshoot without changing IC design
Programmable Dead TimeAdjustable 18–200 ns via single resistor on DT pin - eliminates need for external logic or MCU-based dead-time insertion
Overlap ProtectionHardware-enforced immediate low-state on both outputs if VIA and VIB go high simultaneously - prevents shoot-through even with controller timing errors
Shutdown ClampActive pull-down on VOA/VOB when VDDA/B is unpowered - blocks parasitic turn-on of MOSFETs/IGBTs during power sequencing
AEC-Q100 GradeQualified for automotive applications (Grade 1: –40 to +125 °C) with zero-defect manufacturing flow - suitable for OBC and traction inverter designs
10 kV Bipolar SurgeWithstands ±10 kV surge per IEC 61000-4-5 - enhances reliability in noisy industrial and EV charging environments

Applications

Onboard Charger (OBC)Industrial Motor Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems using SiC half-bridges.

IC Role / Device Role / Timing Role: Isolated gate driver controlling high-side and low-side SiC FETs in interleaved LLC and phase-shifted full-bridge topologies.

Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure reliable operation across 1000 V DC bus transients; <5 ns skew enables tight PWM timing for ZVS optimization.

Use Scenario: Variable-frequency drive for HVAC compressors and industrial pumps using 3-phase IGBT/SiC inverters.

IC Role / Device Role / Timing Role: Dual-channel isolated driver providing shoot-through protection and programmable dead time for each half-bridge leg.

Use Value: Hardware overlap protection eliminates firmware dependency for fault-safe switching; EN pin allows centralized fault shutdown across all 6 phases.

Uninterruptible Power Supply (UPS)Renewable Energy Inverter

Use Scenario: High-efficiency double-conversion UPS with bidirectional buck-boost and inverter stages.

IC Role / Device Role / Timing Role: Gate driver for SiC MOSFETs in high-frequency DC-link choppers and grid-tied inverters.

Use Value: Wide 3–20 V input range interfaces seamlessly with FPGA/CPLD controllers; 1500 VRMS working voltage meets IEC 62109 safety requirements.

Use Scenario: Solar string inverters and battery energy storage systems using multilevel NPC or T-type topologies.

IC Role / Device Role / Timing Role: Isolated driver for high-side and low-side switches in three-level configurations with independent UVLO per channel.

Use Value: Per-rail UVLO (4/8/12/15 V options) prevents partial conduction during DC-link imbalance; thermal shutdown protects against overload in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SIL1225CD-IMSingle-channel, 4 A output; 5 kVRMS isolation; no dead-time programming pinLacks dual-channel integration and hardware overlap protection - requires two devices and external logic for half-bridgeSelect only when space and cost constraints permit discrete channel implementation and dead time is managed externally
UCC5390SCD6 A dual-channel; 5.7 kVRMS; 100 kV/µs CMTI; no AEC-Q100 qualification; different pinout (SOIC-16 WB)Lower CMTI and no automotive qualification - unsuitable for OBC or traction inverter use cases requiring 200 kV/µs immunityConsider for industrial UPS where AEC-Q100 and maximum CMTI are not mandated

Compared with SIL1225CD-IM and UCC5390SCD, SI82E39ABC-IS1R delivers higher integration (dual-channel + EN + DT in one SOIC-16), superior noise immunity (200 kV/µs vs. ≤100 kV/µs), and automotive-grade reliability - making it optimal for safety-critical, high-density SiC/GaN power stages.

Availability

SI82E39ABC-IS1R is available at Aetrix Electronics and suitable for onboard chargers, motor inverters, uninterruptible power supplies, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for SI82E39ABC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, timing, and power management technologies.

The Si82Ex family was developed specifically for high-reliability isolated gate driving in next-generation wide-bandgap power systems - emphasizing low skew, high CMTI, and automotive qualification to replace aging optocoupler-based solutions.

FAQ

What is the isolation voltage rating of the SI82E39ABC-IS1R?

The SI82E39ABC-IS1R is safety-certified for 6 kVRMS isolation for one minute per UL 1577, VDE 60747-17, and CSA 62368-1 standards. It supports a continuous working voltage of 1500 VRMS and withstands ±10 kV bipolar surge per IEC 61000-4-5. This reinforced insulation rating makes SI82E39ABC-IS1R suitable for high-voltage EV and industrial applications where creepage and clearance compliance are critical.

Does the SI82E39ABC-IS1R support both high-side/low-side and dual independent configurations?

Yes, the SI82E39ABC-IS1R uses the Universal pinout configuration with VIA/VIB inputs and EN/DT control, enabling both modes. When DT is grounded, it operates as a high-side/low-side driver with programmable dead time and overlap protection. When DT is tied to VDDI, dead time and overlap protection are disabled, allowing independent control of VOA and VOB - effectively functioning as two isolated single-channel drivers.

What UVLO thresholds are available on the SI82E39ABC-IS1R?

The SI82E39ABC-IS1R offers factory-configured UVLO thresholds on VDDI, VDDA, and VDDB rails at 4 V, 8 V, 12 V, or 15 V. These thresholds are fixed per device variant and selected at order time - they cannot be adjusted externally. The UVLO hysteresis ensures clean entry/exit behavior during power-up and brown-out events, preventing erratic gate drive during unstable supply conditions.

How does the SI82E39ABC-IS1R handle thermal faults?

The SI82E39ABC-IS1R integrates independent thermal sensors per channel. If junction temperature exceeds the trigger threshold (TSD+), the affected channel enters thermal shutdown and pulls VOA or VOB low. After 1 ms, if temperature remains above the reset threshold (TSD–), the output transitions to a weak low state until temperature falls below TSD–. This dual-threshold hysteresis prevents oscillation and enables safe recovery without system reset.

Can the SI82E39ABC-IS1R drive SiC and GaN FETs directly?

Yes, the SI82E39ABC-IS1R delivers 6 A peak sourcing and sinking current with fast rise/fall times (<25 ns typical), making it capable of directly driving medium-power SiC MOSFETs (e.g., up to 1200 V/40 mΩ) and GaN HEMTs without external buffers. Its voltage-mode architecture and external gate resistors allow designers to optimize switching speed, EMI, and gate overshoot independently for each FET technology.

SI82E39ABC-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
-
Number of Channels:
-
Voltage - Isolation:
-
Common Mode Transient Immunity (Min):
-
Propagation Delay tpLH / tpHL (Max):
-
Pulse Width Distortion (Max):
-
Rise / Fall Time (Typ):
-
Current - Output High, Low:
-
Current - Peak Output:
-
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
-
Grade:
-
Qualification:
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Approval Agency:
-

SI82E39ABC-IS1R FAQ

1.How can I place an order for SI82E39ABC-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82E39ABC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82E39ABC-IS1R reliable?

The price and inventory of SI82E39ABC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39ABC-IS1R is usually 5 days.

3.What payment methods are accepted for SI82E39ABC-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39ABC-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82E39ABC-IS1R?

SI82E39ABC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82E39ABC-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82E39ABC-IS1R?

For technical support, including SI82E39ABC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39ABC-IS1R requirements.

6.How does Aetrix verify that SI82E39ABC-IS1R is sourced from the original manufacturer or authorized distributors?

All SI82E39ABC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39ABC-IS1R meets industry standards.

7.What is the process for return or replacement of SI82E39ABC-IS1R?

All SI82E39ABC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39ABC-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82E39ABC-IS1R part is unused and in its original packaging.

Return procedure for SI82E39ABC-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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