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Skyworks Solutions Inc. SI82E39ABE-IS3R
- Part No.:
- SI82E39ABE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39ABE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:2,806
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Product details
Overview
SI82E39ABE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and enable (EN) control logic. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN FETs in half-bridge topologies. Used in onboard chargers and motor drives requiring precise timing and high noise immunity.
For engineers reviewing the SI82E39ABE-IS3R datasheet, SI82E39ABE-IS3R pinout, SI82E39ABE-IS3R application, or SI82E39ABE-IS3R equivalent, key selection criteria include its universal input architecture, programmable dead time via DT pin, UVLO thresholds (4/8/12/15 V options), voltage-mode drive compatibility with external gate resistors, and AEC-Q100 qualification for automotive power systems.
Technical Context
The SI82E39ABE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling robust fault tolerance and sub-5 ns skew between channels. Its universal input structure accepts independent non-inverting logic signals on VIA and VIB, with EN enabling synchronous operation of both drivers.
Dead time is programmable via an external resistor on the DT pin (10–110 kΩ), generating 1.73×RDT + 5.74 ns typical delay; connecting DT to VDDI disables dead time and overlap protection for dual-driver mode. UVLO monitors VDDI, VDDA, and VDDB independently with hysteresis to prevent erratic switching during supply transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute; enables reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel-to-Channel Skew | <5 ns; ensures precise timing alignment critical for shoot-through prevention in half-bridge circuits. |
| CMTI | >200 kV/µs; maintains signal integrity in high-dV/dt environments like SiC/GaN inverters. |
| Peak Output Current | 6 A sourcing/sinking; supports fast switching of high-gate-charge wide-bandgap FETs without external buffers. |
| Input Supply Range | 3–20 V CMOS-compatible; simplifies interface with diverse controllers including 3.3 V, 5 V, and 15 V logic families. |
| Gate Supply Range | 5–30 V per channel; allows flexible biasing for high-side (bootstrap) and low-side (ground-referenced) gate drives. |
| Operating Temperature | –40 to +125 °C; qualified for under-hood automotive and industrial motor control applications. |
Pinout & Package
Narrow-body 16-pin SOIC package (IS3R suffix) with creepage-optimized layout for reinforced isolation. Pin mapping validated per Skyworks datasheet Figure 2 (Si82E39x NB SOIC-16).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Directly controls VOA output state; accepts CMOS-level signals with deglitch filtering option. |
| VIB | Non-inverting logic input for Channel B | Directly controls VOB output state; enables independent PWM or complementary control in universal mode. |
| EN | Active-high enable input | Asserting high enables both outputs; deasserting low forces VOA/VOB low unconditionally for system fault shutdown. |
| DT | Dead time programming input | Resistor-to-GND sets inter-channel dead time; connection to VDDI disables dead time for dual-driver operation. |
| VDDI | Logic input supply | Powers internal digital circuitry and isolation modulator; UVLO threshold configurable at 4/8/12/15 V. |
| GNDI | Logic input ground | Reference for all digital inputs; galvanically isolated from GNDA/GNDB to maintain 6 kVRMS barrier. |
| VDDA / GNDA | Channel A gate driver supply/ground | Provides isolated power path for high-side or low-side FET gate drive; supports bootstrap or isolated supply. |
| VDDB / GNDB | Channel B gate driver supply/ground | Independent power domain for second gate driver; enables asymmetric rail configurations (e.g., 15 V/12 V). |
| VOA / VOB | Gate driver A/B outputs | Voltage-mode outputs with active pull-down clamp; sink/source current set by external gate resistors. |
Key Features
| Feature | Design Value |
|---|---|
| Universal input architecture | Supports independent VIA/VIB control or PWM+EN modes-enables reuse across half-bridge, dual-switch, and phase-shifted topologies without redesign. |
| Voltage-mode drive with gate resistor tuning | External Rg selection directly controls dV/dt, EMI, and overshoot-eliminates need for complex current-source gate drivers. |
| Programmable dead time with overlap protection | Hardware-enforced dead time prevents shoot-through even if controller sends overlapping signals-reduces firmware safety-critical burden. |
| AEC-Q100 Grade 1 qualification | Validated for automotive powertrain and charging systems operating up to +125 °C ambient with zero defects in HTOL testing. |
| Shutdown clamp on unpowered outputs | Active GNDA/GNDB clamps prevent parasitic turn-on of FETs during power sequencing or brownout-enhances system robustness. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems using SiC half-bridges. IC Role / Device Role / Timing Role: Isolated gate driver providing synchronized, skew-controlled switching of high-side and low-side SiC FETs in interleaved LLC resonant stages. Use Value: 200 kV/µs CMTI prevents false triggering during 100+ V/ns bus transients; 6 kVRMS isolation meets IEC 61851-23 reinforced insulation requirements. | Use Scenario: Field-oriented control (FOC) of PMSM/BLDC motors in HVAC compressors and servo amplifiers. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering precise timing and independent UVLO monitoring for each leg of a 3-phase inverter bridge. Use Value: Independent VDDA/VDDB supplies allow asymmetric gate biasing (e.g., 15 V high-side, 12 V low-side); –40 to +125 °C rating supports sealed enclosure operation. |
| Solar Microinverter | Uninterruptible Power Supply (UPS) |
Use Scenario: High-efficiency DC/AC inversion using GaN HEMTs in transformerless grid-tied architectures. IC Role / Device Role / Timing Role: Universal-input isolated driver enabling adaptive dead time adjustment to compensate for GaN device parameter drift over temperature. Use Value: DT pin programmability allows real-time dead time optimization via microcontroller; 4 kV HBM ESD rating withstands handling in field-service environments. | Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter/rectifier stages. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver ensuring safe control separation between AC mains-referenced and battery-referenced domains. Use Value: UL 1577 and VDE 60747-17 certifications satisfy safety agency requirements for 2 MOPP isolation in medical-grade UPS systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3R | Same package and pinout but features disable (DIS) instead of enable (EN); identical isolation, skew, and drive strength. | Preferred when system-level fault response requires active-low shutdown signaling or legacy controller compatibility. | Select Si8239BD-IS3R only if DIS logic matches existing PCB control net; no layout change needed but firmware must invert enable polarity. |
| UCC5390SCDR | TI part with 5.7 A peak drive, 100 kV/µs CMTI, and fixed 100 ns dead time; uses capacitive isolation but lacks DT pin programmability. | Better suited for cost-sensitive industrial drives where fixed dead time suffices and AEC-Q100 is not required. | Choose UCC5390SCDR for non-automotive applications needing lower BOM cost; verify 100 ns dead time meets shoot-through margin in target topology. |
Compared with Si8239BD-IS3R, SI82E39ABE-IS3R offers active-high EN logic for direct MCU GPIO interfacing without level-shifting, while UCC5390SCDR trades programmable dead time and automotive qualification for lower unit cost and simplified design-making SI82E39ABE-IS3R optimal for safety-critical, high-performance EV and industrial systems.
Availability
SI82E39ABE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, solar microinverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E39ABE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in wide-bandgap power systems, emphasizing low skew, high CMTI, and AEC-Q100 compliance for automotive electrification and industrial energy conversion.
FAQ
What is the isolation voltage rating of SI82E39ABE-IS3R and which safety standards does it meet?
The SI82E39ABE-IS3R provides 6 kVRMS isolation for one minute and is certified to UL 1577 (reinforced), VDE 60747-17, CSA 62368-1, and CQC GB4943.1 standards. This rating enables reinforced insulation in systems requiring two means of protection, such as EV onboard chargers and medical UPS units. The isolation barrier uses dual silicon-dioxide capacitors for fault tolerance and lifetime stability beyond optocoupler alternatives.
How does the DT pin function on SI82E39ABE-IS3R, and what resistor value yields 100 ns dead time?
The DT pin on SI82E39ABE-IS3R programs dead time by sinking current through an external resistor to GNDI. Using Equation 1 (tDT = 1.73 × RDT + 5.74), a 55 kΩ resistor yields ~100 ns typical dead time. Connecting DT to VDDI disables dead time and overlap protection, configuring SI82E39ABE-IS3R as a dual independent driver. A 0.1 µF ceramic capacitor placed near DT improves noise immunity.
Does SI82E39ABE-IS3R support both high-side and low-side gate driving in the same package?
Yes, SI82E39ABE-IS3R supports both high-side and low-side gate driving via its dual isolated power domains: VDDA/GNDA and VDDB/GNDB. Each channel operates independently with its own UVLO monitoring, allowing asymmetric supply voltages (e.g., 15 V for high-side bootstrap, 12 V for low-side). The universal input architecture (VIA/VIB) enables direct control of either side without external logic inversion.
What UVLO thresholds are available for SI82E39ABE-IS3R, and how are they selected?
SI82E39ABE-IS3R offers factory-configured UVLO thresholds of 4 V, 8 V, 12 V, or 15 V on VDDI, VDDA, and VDDB-each monitored independently. Threshold selection is fixed per orderable part number and cannot be adjusted externally. The "ABE" suffix indicates 8 V UVLO on VDDI and 12 V on VDDA/VDDB, optimized for 12 V gate drive systems with 3.3 V or 5 V controller interfaces.
Is SI82E39ABE-IS3R pin-compatible with other Si82Ex family members like Si82E29 or Si82E89?
No, SI82E39ABE-IS3R is not pin-compatible with Si82E29x or Si82E89x variants due to differing input architectures: SI82E39ABE-IS3R uses VIA/VIB/EN inputs, while Si82E29x uses VIA/VIB/DIS and Si82E89x uses PWM/DIS. Although all share the same NB SOIC-16 package outline and isolation barrier, pin functions differ-requiring PCB redesign for substitution. Always verify pin mapping against Skyworks Figure 2 before replacement.
SI82E39ABE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39ABE-IS3R FAQ
1.How can I place an order for SI82E39ABE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39ABE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39ABE-IS3R reliable?
The price and inventory of SI82E39ABE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39ABE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E39ABE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39ABE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39ABE-IS3R?
SI82E39ABE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39ABE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39ABE-IS3R?
For technical support, including SI82E39ABE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39ABE-IS3R requirements.
6.How does Aetrix verify that SI82E39ABE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E39ABE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39ABE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E39ABE-IS3R?
All SI82E39ABE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39ABE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39ABE-IS3R part is unused and in its original packaging.
Return procedure for SI82E39ABE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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