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Skyworks Solutions Inc. SI82E39ACE-IS3R
- Part No.:
- SI82E39ACE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39ACE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:3,887
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Product details
Overview
SI82E39ACE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and active-high enable (EN) control. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN FETs in high-frequency half-bridge topologies. Used in onboard chargers and motor drives requiring precise timing and robust noise immunity.
For engineers reviewing the SI82E39ACE-IS3R datasheet, SI82E39ACE-IS3R pinout, SI82E39ACE-IS3R application, or SI82E39ACE-IS3R equivalent, this page provides verified specifications, SOIC-16 pin mapping, UVLO thresholds (4 V / 8 V / 12 V / 15 V), dead time programmability via external resistor, and automotive-grade AEC-Q100 qualification - all confirmed from Skyworks' official datasheet Rev. 206857C.
Technical Context
The SI82E39ACE-IS3R implements capacitive isolation using dual silicon dioxide (SiO₂) capacitors with RF OOK modulation, enabling differential signal transmission and fault-tolerant timing. Its universal input architecture accepts independent non-inverting logic signals on VIA and VIB, with EN enabling synchronous operation of both channels.
It features voltage-mode drive with programmable dead time (via DT pin resistor), integrated shutdown clamp for unpowered gate drivers, and independent UVLO monitoring on VDDI, VDDA, and VDDB. Thermal shutdown triggers at 150 °C with 1 ms delay and resets at 140 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - certified for reinforced insulation per UL 1577, VDE 60747-17, CSA 62368-1. |
| Channel-to-Channel Skew | <5 ns - ensures matched timing between high-side and low-side gate drive edges in half-bridge circuits. |
| CMTI | >200 kV/µs - prevents false triggering under fast transient common-mode noise in high-dv/dt power stages. |
| Peak Output Current | 6 A sourcing/sinking - sufficient to rapidly charge/discharge wide-bandgap FET gates without external buffers. |
| Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V logic controllers without level-shifting. |
| Gate Supply Range | 5–30 V - supports 12 V and 15 V gate bias for SiC MOSFETs and GaN HEMTs. |
| UVLO Thresholds | 4 V / 8 V / 12 V / 15 V options - configurable per device variant to match system rail sequencing requirements. |
| Operating Temperature | –40 to +125 °C - qualified for automotive under-hood and industrial power converter environments. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage ≥8.3 mm and clearance ≥8.0 mm - compliant with reinforced insulation requirements for 1500 VRMS working voltage.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Accepts CMOS-level PWM or control signal; enables independent high-side switching control. |
| VIB | Non-inverting logic input for Channel B | Enables independent low-side switching control; supports universal dual-driver mode when DT = VDDI. |
| EN | Active-high enable input | Drives both outputs low when deasserted; critical for fault-safe shutdown in motor drives and inverters. |
| DT | Dead time programming terminal | Resistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); connecting to VDDI disables dead time for dual-driver use. |
| VDDA / GNDA | Channel A gate driver supply and ground | Isolated 5–30 V power domain for high-side FET gate drive; supports bootstrap or isolated supply. |
| VDDB / GNDB | Channel B gate driver supply and ground | Independent 5–30 V domain for low-side FET; allows asymmetrical gate biasing (e.g., 15 V high-side / 12 V low-side). |
| VDDI / GNDI | Logic input supply and ground | 3–20 V digital interface side; galvanically separated from power domains by SiO₂ capacitors. |
| VOA / VOB | Gate driver A and B outputs | Voltage-source outputs with 6 A peak drive; include short-circuit clamp and shutdown clamp for safe FET turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| CMOS input with deglitch filter | Rejects sub-50 ns noise spikes while adding minimal propagation delay - improves reliability in noisy motor control environments. |
| Voltage Mode Drive | Uses external gate resistors (Rg) to tune rise/fall times and limit dV/dt-induced EMI - eliminates need for complex current-source gate drivers. |
| Programmable dead time | Adjustable 18–200 ns via single resistor on DT pin - prevents shoot-through in half-bridge without MCU intervention. |
| Independent UVLO per power domain | Monitors VDDI, VDDA, and VDDB separately - ensures safe gate drive only when all supplies are within spec, avoiding partial operation. |
| AEC-Q100 Grade 1 qualification | Validated for automotive applications up to +125 °C ambient - meets stringent defectivity and lifetime requirements for EV traction inverters and OBCs. |
| 10 kV bipolar surge rating | Withstands repetitive ±10 kV transients per IEC 61000-4-5 - protects against lightning-induced surges in grid-tied inverters and UPS systems. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating at 100–300 kHz. IC Role / Device Role / Timing Role: Isolated dual gate driver controlling high-side/low-side half-bridge switches with synchronized dead time to prevent shoot-through during phase-shift modulation. Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure reliable operation across 400 V–800 V battery architectures with fast-switching SiC devices. |
Use Scenario: Variable-frequency drive for HVAC compressors and industrial pumps using 650 V/1200 V IGBTs or SiC FETs. IC Role / Device Role / Timing Role: Universal-input isolated driver delivering matched 6 A gate current to both legs of a three-phase inverter bridge with <5 ns skew. Use Value: Independent UVLO on VDDA/VDDB prevents asymmetric gate drive during rail droop, reducing risk of cross-conduction failure. |
| Uninterruptible Power Supply (UPS) | Renewable Energy Inverter |
Use Scenario: High-efficiency double-conversion UPS with 48 V–400 V DC bus and 50/60 Hz output using GaN FETs. IC Role / Device Role / Timing Role: Dual-channel driver with EN-controlled fast shutdown for overload and short-circuit protection during line-interactive mode transitions. Use Value: Shutdown clamp on VOA/VOB guarantees safe turn-off of GaN devices even when VDDA/VDDB rails collapse unexpectedly. |
Use Scenario: Solar string inverters and battery storage systems using 1200 V SiC modules in two-level or three-level NPC topologies. IC Role / Device Role / Timing Role: Isolated gate driver providing reinforced insulation between controller MCU and high-voltage DC link, meeting IEC 62109 and UL 1741. Use Value: 1500 VRMS working voltage and VDE 60747-17 certification support direct integration into safety-critical PV inverter designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SIL1225CD-IM | Single-input PWM architecture (not universal VIA/VIB); 4 A peak drive; 3.75 kVRMS isolation. | Limited to high-side/low-side half-bridge with shared input; not suitable for independent channel control. | Select when cost-sensitive designs require basic half-bridge drive without independent inputs or 6 A capability. |
| UCC5390SCD | 3.3–15 V input range; 10 A peak drive; 5 kVRMS isolation; no programmable dead time pin. | Requires external dead time generation; higher drive strength but lower isolation rating than SI82E39ACE-IS3R. | Choose for ultra-fast switching GaN systems needing >6 A drive where 5 kVRMS meets safety requirements. |
Compared with SIL1225CD-IM and UCC5390SCD, the SI82E39ACE-IS3R uniquely combines universal dual-input control, 6 kVRMS reinforced isolation, and resistor-programmable dead time - making it optimal for automotive OBCs and industrial inverters demanding timing precision, safety compliance, and design flexibility without external logic.
Availability
SI82E39ACE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor drives, uninterruptible power supplies, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E39ACE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in next-generation power converters using SiC and GaN FETs - emphasizing low skew, high CMTI, and AEC-Q100 qualification for EV and industrial applications.
FAQ
What is the isolation rating and safety certification status of the SI82E39ACE-IS3R?
The SI82E39ACE-IS3R provides 6 kVRMS isolation for one minute and is certified to UL 1577, VDE 60747-17 (reinforced insulation), CSA 62368-1, and CQC GB4943.1. It supports a 1500 VRMS working voltage and meets 2 MOPP requirements per IEC 60601-1 - making it suitable for medical and automotive applications requiring reinforced insulation.
Does the SI82E39ACE-IS3R support both high-side/low-side and dual independent configurations?
Yes, the SI82E39ACE-IS3R uses a universal input architecture with VIA and VIB pins, allowing it to operate in either mode. When the DT pin is connected to GND via a resistor, it functions as a high-side/low-side driver with programmable dead time. When DT is tied to VDDI, dead time and overlap protection are disabled, enabling true dual independent gate drive.
What UVLO thresholds are implemented in the SI82E39ACE-IS3R?
The SI82E39ACE-IS3R offers factory-configured UVLO thresholds of 4 V, 8 V, 12 V, or 15 V on VDDI, VDDA, and VDDB - each monitored independently. This allows precise coordination with system power rail sequencing, especially critical in automotive OBCs where 12 V and 48 V rails ramp at different rates.
How is dead time programmed on the SI82E39ACE-IS3R, and what is the adjustment range?
Dead time is set by connecting an external resistor (RDT) between the DT pin and GNDI. Using Equation tDT = 1.73 × RDT + 5.74 (with RDT in kΩ), dead time ranges from ~18 ns (10 kΩ) to ~200 ns (110 kΩ). A 0.1 µF ceramic capacitor placed near DT improves noise immunity.
Is the SI82E39ACE-IS3R qualified for automotive applications?
Yes, the SI82E39ACE-IS3R is AEC-Q100 Grade 1 qualified (–40 °C to +125 °C ambient), manufactured using automotive-specific process flows, and rated for 10 kV bipolar surge per IEC 61000-4-5 - confirming its suitability for EV traction inverters, onboard chargers, and ADAS power systems.
SI82E39ACE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39ACE-IS3R FAQ
1.How can I place an order for SI82E39ACE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39ACE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39ACE-IS3R reliable?
The price and inventory of SI82E39ACE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39ACE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E39ACE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39ACE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39ACE-IS3R?
SI82E39ACE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39ACE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39ACE-IS3R?
For technical support, including SI82E39ACE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39ACE-IS3R requirements.
6.How does Aetrix verify that SI82E39ACE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E39ACE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39ACE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E39ACE-IS3R?
All SI82E39ACE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39ACE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39ACE-IS3R part is unused and in its original packaging.
Return procedure for SI82E39ACE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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