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Skyworks Solutions Inc. SI82E39AEE-IS3R
- Part No.:
- SI82E39AEE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39AEE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:1,831
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Product details
Overview
SI82E39AEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and enable (EN) control logic. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN MOSFETs and IGBTs in high-efficiency half-bridge power stages.
For engineers reviewing the SI82E39AEE-IS3R datasheet, SI82E39AEE-IS3R pinout, SI82E39AEE-IS3R application, or SI82E39AEE-IS3R equivalent, this page provides verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed dead-time programmability via DT pin, UVLO thresholds at 4/8/12/15 V, and automotive-grade AEC-Q100 qualification status.
Technical Context
The SI82E39AEE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling across two independent channels, enabling precise timing control and fault-tolerant operation. Its universal input architecture accepts separate non-inverting logic signals on VIA and VIB, with EN enabling synchronous activation of both outputs.
It supports voltage-mode drive with external gate resistors, features integrated shutdown clamps for unpowered gate driver protection, and includes programmable dead time (via resistor to GNDI) with overlap protection that forces both outputs low during simultaneous high inputs - preventing shoot-through in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute; enables reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel-to-Channel Skew | <5 ns; ensures matched timing between VOA and VOB transitions for balanced half-bridge switching. |
| CMTI | >200 kV/µs; maintains signal integrity in high-dV/dt environments like SiC/GaN inverters. |
| Peak Output Current | 6 A sourcing/sinking; drives high-gate-charge wide-bandgap FETs without external buffers. |
| Input Supply Range | 3–20 V VDDI; compatible with 3.3 V, 5 V, and 15 V controller logic levels. |
| Gate Supply Range | 5–30 V per channel (VDDA/VDDB); supports bipolar gate biasing and bootstrap configurations. |
| UVLO Thresholds | Configurable at 4 V, 8 V, 12 V, or 15 V; prevents erratic switching during brown-out conditions. |
| Operating Temperature | –40 °C to +125 °C; qualified for under-hood automotive and industrial motor drive applications. |
Pinout & Package
Narrow-body 16-pin SOIC (SOIC-16 NB) package with creepage ≥8.3 mm and clearance ≥8.0 mm; RoHS-compliant, halogen-free, and rated for 1500 VRMS working voltage.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Accepts CMOS-level signal to directly control VOA output state; deglitch filter optional. |
| VIB | Non-inverting logic input for Channel B | Independent control of VOB; enables asymmetric PWM or phase-shifted operation. |
| EN | Active-high enable input | Drives both VOA and VOB low when deasserted; overrides all input states for fail-safe shutdown. |
| DT | Dead time programming terminal | Resistor-to-GNDI sets dead time (10–110 kΩ → ~18–200 ns); connecting to VDDI disables dead time. |
| VDDA / GNDA | Channel A gate driver supply and ground | Isolated 5–30 V power domain for high-side or low-side FET gate drive; supports bootstrap or isolated supplies. |
| VDDB / GNDB | Channel B gate driver supply and ground | Independent supply domain; allows split-rail or bipolar gate biasing for enhanced EMI control. |
| VOA / VOB | High-current gate driver outputs | 6 A peak sourcing/sinking; voltage-mode drive with external gate resistors for slew rate tuning. |
| VDDI / GNDI | Logic input supply and isolated ground | 3–20 V digital interface side; galvanically separated from power domains by SiO₂ capacitors. |
Key Features
| Feature | Design Value |
|---|---|
| Universal input architecture | Separate VIA/VIB inputs enable independent control of each channel - critical for asymmetrical topologies like three-phase inverters or resonant LLC controllers. |
| Voltage-mode gate drive | Eliminates need for external current-sense feedback; gate resistor selection directly tunes rise/fall times and overshoot without loop compensation. |
| Programmable dead time with overlap protection | Hardware-enforced dead time prevents shoot-through even if controller sends overlapping pulses - no firmware dependency required. |
| Integrated shutdown clamp | Active pull-down to GNDA/GNDB during VDDA/VDDB undervoltage prevents parasitic turn-on of unpowered FETs in fault conditions. |
| AEC-Q100 Grade 1 qualification | Validated for automotive powertrain and charging systems with full temperature range (–40 °C to +125 °C) and lifetime reliability testing. |
| 10 kV bipolar surge immunity | Withstands repetitive line transients in onboard chargers and DC-DC converters without latch-up or parameter shift. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: 3-phase inverter controlling PMSM/BLDC motors in EV traction or industrial servo systems. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver providing independent, skew-controlled drive to high-side and low-side switches in each leg. Use Value: <5 ns skew and 200 kV/µs CMTI ensure precise commutation timing and noise immunity in high-speed, high-dV/dt motor control loops. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers with SiC MOSFETs. IC Role / Device Role / Timing Role: Isolated gate driver enabling fast-switching half-bridge operation with programmable dead time to prevent shoot-through during zero-voltage switching transitions. Use Value: 6 A peak current and 6 kVRMS isolation support high-frequency, high-efficiency operation up to 200 kHz while meeting reinforced insulation safety requirements. |
| Uninterruptible Power Supplies (UPS) | Industrial DC-DC Converters |
|
Use Scenario: High-power double-conversion UPS with IGBT-based inverter stage and battery-side SiC boost converter. IC Role / Device Role / Timing Role: Universal-configured isolated driver delivering synchronized, fault-protected gate signals to both inverter and converter half-bridges. Use Value: EN pin enables system-level fault coordination; UVLO thresholds configurable per rail to match different bus voltages and startup sequences. |
Use Scenario: 1–3 kW isolated DC-DC modules for telecom or server power with GaN HEMTs. IC Role / Device Role / Timing Role: Compact SOIC-16 isolated driver replacing optocouplers in high-density, high-reliability power modules. Use Value: Longer service life and tighter part-to-part matching vs. optocouplers reduce calibration overhead and improve long-term efficiency stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239AD-IS3R | Same SOIC-16 NB package and universal input, but uses DISABLE (DIS) instead of ENABLE (EN) logic; identical isolation, skew, and drive strength. | Requires inverted control signal polarity; suitable where system-level fault signaling is active-low. | Select Si8239AD-IS3R only if controller GPIOs are constrained to active-low shutdown assertion. |
| UCC5390SCD | TI's 6-A dual-channel isolator with 3.75 kVRMS isolation, 100 kV/µs CMTI, and fixed 100 ns dead time; SOIC-16 WB package (larger footprint). | Lacks programmable dead time and UVLO configurability; limited to high-side/low-side mode only. | Choose UCC5390SCD only when board space permits wider SOIC and design can accept fixed dead time and lower CMTI. |
Compared with SI82E39AEE-IS3R, Si8239AD-IS3R offers identical performance with inverted enable logic, while UCC5390SCD trades isolation robustness and flexibility for TI ecosystem integration - making SI82E39AEE-IS3R optimal for designs requiring field-programmable dead time, multiple UVLO options, and highest noise immunity.
Availability
SI82E39AEE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply, automotive-grade reliability, and long-term lifecycle support.
Supply support for SI82E39AEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si82Ex family was designed specifically for high-reliability, high-efficiency power conversion systems using wide-bandgap semiconductors - delivering superior isolation, timing accuracy, and thermal resilience over legacy optocoupler-based drivers.
FAQ
What is the isolation voltage rating of the SI82E39AEE-IS3R?
The SI82E39AEE-IS3R is safety-certified for 6 kVRMS isolation for one minute per UL 1577, with 1500 VRMS working voltage and reinforced insulation compliance to VDE 60747-17, CSA 62368-1, and GB4943.1. This rating applies across its full operating temperature range and supports use in medical (2 MOPP) and industrial safety-critical systems.
Does the SI82E39AEE-IS3R support both high-side and low-side gate driving in a single device?
Yes, the SI82E39AEE-IS3R supports both high-side and low-side gate driving through its dual isolated channels: VDDA/GNDA/VOA form one isolated domain for high-side FETs, and VDDB/GNDB/VOB form a second independent domain for low-side FETs. Each channel operates up to 30 V and delivers 6 A peak current, enabling direct drive of SiC/GaN devices without level-shifting circuitry.
How is dead time configured on the SI82E39AEE-IS3R?
Dead time on the SI82E39AEE-IS3R is set by connecting an external resistor (RDT) between the DT pin and GNDI. RDT values from 10 kΩ to 110 kΩ yield typical dead times of ~18 ns to ~200 ns. Connecting DT to VDDI disables dead time insertion and overlap protection, allowing pure dual-driver operation. The SI82E39AEE-IS3R does not require external logic or MCU intervention to enforce shoot-through prevention.
What UVLO thresholds are available on the SI82E39AEE-IS3R?
The SI82E39AEE-IS3R offers factory-configured UVLO thresholds of 4 V, 8 V, 12 V, or 15 V on VDDI, VDDA, and VDDB supplies - each independently monitored. These thresholds prevent erroneous switching during brown-out events and ensure clean startup/shutdown sequencing. The specific threshold for SI82E39AEE-IS3R is 8 V on all three supplies, as indicated by the "E39" ordering code suffix.
Is the SI82E39AEE-IS3R qualified for automotive applications?
Yes, the SI82E39AEE-IS3R is AEC-Q100 Grade 1 qualified (–40 °C to +125 °C ambient), manufactured using automotive-specific process flows, and certified for reinforced insulation in 2 MOPP medical and automotive power systems. It meets ISO/TS 16949 quality standards and includes full traceability, lot-level testing, and zero-defect screening protocols required for automotive powertrain and charging modules.
SI82E39AEE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39AEE-IS3R FAQ
1.How can I place an order for SI82E39AEE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39AEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39AEE-IS3R reliable?
The price and inventory of SI82E39AEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39AEE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E39AEE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39AEE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39AEE-IS3R?
SI82E39AEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39AEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39AEE-IS3R?
For technical support, including SI82E39AEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39AEE-IS3R requirements.
6.How does Aetrix verify that SI82E39AEE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E39AEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39AEE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E39AEE-IS3R?
All SI82E39AEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39AEE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39AEE-IS3R part is unused and in its original packaging.
Return procedure for SI82E39AEE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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