Skyworks Solutions Inc. SI82E39AGC-IS1
- Part No.:
- SI82E39AGC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39AGC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
- Payment:

- Shipping:

Inventory:1,931
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI82E39AGC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and enable (EN) control logic. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN FETs in half-bridge topologies. Used in automotive-grade onboard chargers and industrial motor drives requiring robust noise immunity and precise dead-time control.
For engineers reviewing the SI82E39AGC-IS1 datasheet, SI82E39AGC-IS1 pinout, SI82E39AGC-IS1 application, or SI82E39AGC-IS1 equivalent, key selection criteria include its 3–20 V CMOS input range, programmable dead time via DT pin, UVLO thresholds (4/8/12/15 V options), voltage-mode drive architecture, and AEC-Q100 qualification for automotive power systems.
Technical Context
The SI82E39AGC-IS1 implements capacitive silicon-dioxide (SiO₂) isolation with differential RF-modulated OOK signaling, enabling high fault tolerance and timing consistency across temperature and lifetime. Its universal input architecture accepts independent non-inverting logic signals on VIA and VIB, with EN enabling synchronous operation of both channels.
Dead time is programmable via an external resistor on the DT pin (10–110 kΩ), generating typical delays from 22 ns to 250 ns; connecting DT to VDDI disables dead time and overlap protection, converting it to a dual independent driver. Output stage uses voltage-mode drive with external gate resistors to tune switching speed, overshoot, and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577), reinforced insulation per VDE 60747-17, CSA 62368-1, and CQC GB4943.1. |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side gate drive edges in half-bridge circuits. |
| CMTI | >200 kV/µs - prevents false triggering under fast transient common-mode noise in high-dv/dt power stages. |
| Peak Output Current | 6 A sourcing/sinking - supports fast turn-on/turn-off of high-capacitance SiC and GaN FETs without external buffers. |
| Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controller logic, including microcontrollers and DSPs. |
| Gate Supply Range | 5–30 V - enables flexible biasing for diverse FET threshold voltages and Miller plateau requirements. |
| UVLO Thresholds | Factory-set at 4 V, 8 V, 12 V, or 15 V - prevents erratic switching during brown-out or startup/shutdown transitions. |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive and industrial ambient environments. |
Pinout & Package
Narrow-body 16-pin SOIC package (GC suffix), with creepage/clearance optimized for reinforced isolation. Pinout matches Si82E39x Universal/Enable variant per Figure 2 of datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Drives VOA high when asserted; independent of VIB - enables asymmetric PWM or phase-shifted control. |
| VIB | Non-inverting logic input for Channel B | Drives VOB high when asserted; decoupled from VIA - supports dual independent gate drive paths. |
| EN | Active-high enable control | Pulls both VOA and VOB low when deasserted - provides fail-safe shutdown without relying on controller logic state. |
| DT | Dead time programming input | Sets delay between VOA/VOB transitions via external resistor; tied to VDDI to disable dead time and overlap protection. |
| VDDA / GNDA | Channel A gate driver supply and ground | Isolated 5–30 V power domain for high-side or low-side FET gate drive; supports bootstrap or isolated supply. |
| VDDB / GNDB | Channel B gate driver supply and ground | Independent isolated 5–30 V domain - enables split-rail or floating configurations for asymmetrical topologies. |
| VDDI / GNDI | Logic input supply and ground | 3–20 V digital interface side - galvanically separated from power domains by SiO₂ capacitors. |
| VOA / VOB | Gate driver outputs | Voltage-source outputs with 6 A peak drive - configured as unipolar (0–VDDA/B) or bipolar (±VDDA/B) via external circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| Voltage Mode Drive | Uses external gate resistors (Rg) to directly control dV/dt, switching loss, and EMI - eliminates need for complex current-source compensation. |
| Programmable Dead Time | Resistor-tuned delay (22–250 ns) prevents shoot-through in half-bridge inverters without fixed internal timing constraints. |
| Overlap Protection | Hardware-level detection forces both outputs low if VIA and VIB go high simultaneously - failsafe against controller logic errors. |
| Shutdown Clamp | Active pull-down to GNDA/GNDB when VDDA/VDDB is unpowered - prevents parasitic turn-on of FETs during power sequencing. |
| AEC-Q100 Grade | Qualified to Grade 1 (–40 to +125 °C) with automotive-specific manufacturing flow - meets zero-defect requirements for EV traction inverters. |
| CMOS Input with Deglitch | Configurable deglitch filter rejects sub-50 ns noise spikes while adding minimal propagation delay - improves reliability in noisy motor drive environments. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems using SiC half-bridges. IC Role / Device Role / Timing Role: Isolated gate driver controlling high-side and low-side SiC MOSFETs in interleaved LLC resonant converters. Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure safe operation across primary-secondary boundaries under high dv/dt transients. |
Use Scenario: Field-oriented control (FOC) of 3-phase PMSM/induction motors in HVAC and pump inverters. IC Role / Device Role / Timing Role: Dual-channel driver delivering synchronized, skew-controlled gate signals to IGBT/SiC modules in 6-pulse inverter legs. Use Value: <5 ns skew and programmable dead time enable precise PWM edge placement required for low-torque-ripple FOC algorithms. |
| Uninterruptible Power Supply (UPS) | DC-DC Converter (48 V–12 V) |
|
Use Scenario: High-efficiency double-conversion UPS with active rectifier and inverter stages using GaN FETs. IC Role / Device Role / Timing Role: Gate driver for bidirectional totem-pole PFC and full-bridge inverter, managing shoot-through risk during mode transitions. Use Value: Hardware overlap protection and EN-controlled shutdown provide deterministic fault response during grid failure or overload events. |
Use Scenario: High-density 48 V input telecom/data-center DC-DC converters with synchronous buck or phase-shifted full-bridge topologies. IC Role / Device Role / Timing Role: Isolated driver for high-side/low-side GaN HEMTs operating at >1 MHz switching frequencies. Use Value: 6 A peak drive and voltage-mode architecture support fast, controlled switching with minimal gate loop ringing at high frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si82E30AD-IS1 | Same Si82E39x family but with disable (DIS) instead of enable (EN); identical pinout, specs, and isolation rating. | Preferred where controller asserts active-high disable signal rather than enable; truth table behavior differs only in EN/DIS polarity. | Select SI82E39AGC-IS1 when system-level fault handling requires positive-logic activation of gate drive functionality. |
| UCC5390SCD | TI part with 4 A peak drive, 100 kV/µs CMTI, and fixed 100 ns dead time; no deglitch option; different SOIC-16 pinout. | Lacks programmable dead time and overlap protection; not AEC-Q100 qualified; lower drive strength limits SiC/GaN use cases. | Choose SI82E39AGC-IS1 over UCC5390SCD when designing for automotive OBC or high-reliability industrial inverters requiring field-programmable timing and automotive qualification. |
Compared with Si82E30AD-IS1, SI82E39AGC-IS1 offers identical performance but inverted control logic polarity - critical for safety-critical EN-triggered shutdown. Against UCC5390SCD, SI82E39AGC-IS1 provides higher drive strength, superior noise immunity, and design flexibility via resistor-programmed dead time and overlap protection.
Availability
SI82E39AGC-IS1 is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial motor drives, uninterruptible power supplies, and high-density DC-DC converters requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.
Supply support for SI82E39AGC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in next-generation power electronics - targeting SiC/GaN adoption in EV, renewable energy, and industrial automation systems where timing precision, noise immunity, and safety certification are mandatory.
FAQ
What is the isolation voltage rating of the SI82E39AGC-IS1?
The SI82E39AGC-IS1 is safety-certified for 6 kVRMS isolation for one minute per UL 1577, with reinforced insulation compliance to VDE 60747-17, CSA 62368-1, and CQC GB4943.1. Its working voltage is rated at 1500 VRMS, and it withstands 10 kV bipolar surge - making it suitable for high-voltage automotive and industrial power systems where galvanic separation is critical.
Does the SI82E39AGC-IS1 support both high-side/low-side and dual independent configurations?
Yes, the SI82E39AGC-IS1 is a Universal-configuration device with independent VIA and VIB inputs. When the DT pin is connected to VDDI, dead time and overlap protection are disabled, allowing it to operate as two fully independent gate drivers. When DT is grounded via a resistor, it functions as a high-side/low-side driver with programmable dead time - providing topology flexibility without changing hardware.
What UVLO thresholds are implemented in the SI82E39AGC-IS1?
The SI82E39AGC-IS1 features factory-configured undervoltage lockout thresholds on VDDI, VDDA, and VDDB - selectable from 4 V, 8 V, 12 V, or 15 V per supply rail. These thresholds prevent erroneous switching during brown-out conditions and ensure clean startup/shutdown sequencing. The specific UVLO levels for this part are defined in its ordering code and verified in the Skyworks datasheet revision 206857C.
How does the SI82E39AGC-IS1 handle power sequencing between VDDI and VDDA/VDDB?
The SI82E39AGC-IS1 incorporates independent UVLO monitors and shutdown clamps for each supply domain. If VDDI drops below its UVLO threshold, both VOA and VOB are forced low regardless of input states. If VDDA or VDDB falls below its respective UVLO, the corresponding output enters a weak low state via the shutdown clamp - preventing parasitic turn-on of the driven FET even when the gate supply is unpowered.
Is the SI82E39AGC-IS1 qualified for automotive applications?
Yes, the SI82E39AGC-IS1 is AEC-Q100 qualified (Grade 1: –40 °C to +125 °C) and manufactured using automotive-specific process flows at all stages - including wafer fabrication, assembly, and test. It carries automotive-grade OPN designation (IS1 suffix) and meets zero-defect requirements for safety-critical EV subsystems such as onboard chargers and DC-DC converters.
SI82E39AGC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39AGC-IS1 FAQ
1.How can I place an order for SI82E39AGC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39AGC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39AGC-IS1 reliable?
The price and inventory of SI82E39AGC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39AGC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82E39AGC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39AGC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39AGC-IS1?
SI82E39AGC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39AGC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39AGC-IS1?
For technical support, including SI82E39AGC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39AGC-IS1 requirements.
6.How does Aetrix verify that SI82E39AGC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82E39AGC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39AGC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82E39AGC-IS1?
All SI82E39AGC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39AGC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39AGC-IS1 part is unused and in its original packaging.
Return procedure for SI82E39AGC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI82E39AGC-IS1 Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
