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Skyworks Solutions Inc. SI82E39BBC-IS1
- Part No.:
- SI82E39BBC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39BBC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
- Payment:
- Shipping:
Inventory:3,526
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Product details
Overview
SI82E39BBC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, designed for high-side/low-side half-bridge configurations in power converters and motor drives. It features 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, CMOS inputs, and programmable dead time via external resistor. It drives SiC, GaN, IGBT, and MOSFET power switches in automotive-grade systems.
For engineers reviewing the SI82E39BBC-IS1 datasheet, SI82E39BBC-IS1 pinout, SI82E39BBC-IS1 application, or SI82E39BBC-IS1 equivalent, this page delivers verified technical context, exact pin functions, real-world use cases, and validated alternative options - all grounded in Skyworks' official Si82E39 family documentation and ordering guide.
Technical Context
The SI82E39BBC-IS1 implements a High-Side/Low-Side configuration with PWM input (single logic control), EN enable input, and DT pin for dead time programming. Its capacitive isolation uses dual silicon dioxide (SiO₂) capacitors with RF OOK modulation, enabling 200 kV/μs CMTI and stable timing across temperature and lifetime.
It integrates independent UVLO on VDDI (logic supply), VDDA (driver A), and VDDB (driver B), with configurable thresholds (4/8/12/15 V). The output stage operates as a voltage source with active short-circuit clamping and shutdown clamp to prevent parasitic turn-on during unpowered states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - certified reinforced insulation per UL 1577, VDE 60747-17, CSA 62368-1, and CQC GB4943.1. |
| Output Drive Strength | 6 A peak sourcing/sinking - supports fast switching of high-capacitance SiC/GaN FETs without external buffers. |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side outputs, critical for shoot-through prevention. |
| CMTI | >200 kV/μs - rejects high dv/dt noise in high-power inverters and onboard chargers without false triggering. |
| Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controller logic, including microcontrollers and DSPs. |
| Gate Supply Range | 5–30 V - enables direct drive of 12 V or 15 V gate bias rails for IGBTs and wide-bandgap devices. |
| Operating Temperature | –40 to +125 °C - qualified to AEC-Q100 Grade 1, suitable for under-hood automotive and industrial environments. |
| ESD Rating | 4 kV HBM - robust against handling and board-level electrostatic discharge during assembly and operation. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage ≥8.3 mm and clearance ≥8.0 mm - optimized for high-voltage isolation in compact power designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for gate driver A | Accepts CMOS-level PWM or control signal; not used in SI82E39x PWM-input variant - replaced by PWM pin. |
| VIB | Non-inverting logic input for gate driver B | Not applicable to SI82E39BBC-IS1 - this part uses single PWM input, not dual independent inputs. |
| PWM | Single logic input for both drivers | Drives VOA high / VOB low when high; VOA low / VOB high when low - standard half-bridge control interface. |
| EN | Active-high enable input | Asserting high enables normal operation; pulling low forces both outputs low within tDID (≤100 ns), enabling fast fault shutdown. |
| DT | Dead time programming terminal | Connects to GNDI via resistor (10–110 kΩ) to set dead time (tDT = 1.73 × RDT + 5.74 ns); tied to VDDI disables dead time for dual-driver mode. |
| VDDA / GNDA | High-side gate driver supply and ground | Provides isolated 5–30 V power to driver A; GNDA is floating reference - requires separate isolated or bootstrap supply. |
| VDDB / GNDB | Low-side gate driver supply and ground | Provides 5–30 V power to driver B; GNDB is referenced to system power ground - simplifies layout for low-side switch. |
| VOA / VOB | High-side and low-side gate drive outputs | Voltage-mode outputs with internal short-circuit clamp to VDDA/VDDB and shutdown clamp to GNDA/GNDB. |
| VDDI / GNDI | Logic input supply and isolated ground | 3–20 V digital supply; GNDI is galvanically isolated from GNDA/GNDB - defines primary side reference for PWM/EN signals. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable dead time with overlap protection | Resistor-tuned delay (10–110 kΩ → ~20–200 ns) prevents shoot-through; automatic overlap clamp forces both outputs low if inputs go high simultaneously. |
| Voltage-mode gate drive with clamping | Internal short-circuit clamp limits VOA/VOB to ~VDDA/VDDB + 0.7 V during overcurrent; shutdown clamp pulls outputs to GNDA/GNDB when unpowered. |
| Independent triple UVLO monitoring | Dedicated undervoltage lockout on VDDI, VDDA, and VDDB - each with hysteresis; ensures safe startup/shutdown and prevents erratic behavior during brownouts. |
| AEC-Q100 Grade 1 qualification | Validated for automotive applications including onboard chargers and traction inverters - full temperature, ESD, and reliability testing per automotive standards. |
| CMOS input with deglitch filter option | Robust Schmitt-triggered inputs reject noise; optional deglitch (configurable per OPN) suppresses sub-50 ns glitches without compromising propagation delay. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
Use Scenario: Three-phase inverter driving PMSM or induction motors in EV traction or industrial servo systems. IC Role / Device Role / Timing Role: SI82E39BBC-IS1 provides isolated, synchronized high-side/low-side gate drive with programmable dead time to prevent shoot-through in IGBT/SiC half-bridges. Use Value: <5 ns skew and 200 kV/μs CMTI ensure reliable commutation at high switching frequencies (up to 200 kHz) under noisy battery bus conditions. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in automotive 11 kW or 22 kW onboard chargers. IC Role / Device Role / Timing Role: SI82E39BBC-IS1 drives high-frequency SiC MOSFETs in totem-pole PFC and isolated DC-DC stages with reinforced 6 kVRMS isolation. Use Value: AEC-Q100 qualification and 1500 VRMS working voltage meet ISO 6469-3 functional safety requirements for EV charging systems. |
| Uninterruptible Power Supplies | Industrial Motor Inverters |
Use Scenario: Online double-conversion UPS with IGBT-based inverter stage delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: SI82E39BBC-IS1 isolates control logic from 400–800 V DC bus while driving parallel IGBT modules with matched timing. Use Value: Dual UVLO on VDDA/VDDB ensures gate drivers remain disabled until both high- and low-side supplies stabilize - preventing partial conduction faults. |
Use Scenario: Variable-frequency drive (VFD) controlling 3–100 HP induction motors in HVAC, pumps, and compressors. IC Role / Device Role / Timing Role: SI82E39BBC-IS1 serves as isolated gate driver in three half-bridge legs, managing dead time across all six switches via synchronized DT pin routing. Use Value: Narrow-body SOIC-16 footprint enables dense PCB layout; 125 °C max junction temperature supports operation in enclosed industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8239BB-C-IS1 | Same Si82Ex family, identical pinout and specs; differs only in deglitch filter setting (50 ns vs. 100 ns default). | No functional difference in most designs; may require minor timing validation if operating near noise edge cases. | Select SI82E39BBC-IS1 for tighter glitch rejection where high dv/dt transients exceed 100 V/ns. |
| TI UCC5390SCDWR | 3.3–15 V input range (narrower than SI82E39's 3–20 V); 4 A peak drive (vs. 6 A); 5 kVRMS isolation (vs. 6 kVRMS). | Limited to lower-power Si MOSFETs; lacks AEC-Q100 grade and automotive qualification. | Choose SI82E39BBC-IS1 for SiC/GaN systems requiring >4 A drive, 6 kVRMS certification, or automotive compliance. |
Compared with SI8239BB-C-IS1, SI82E39BBC-IS1 offers higher deglitch immunity for ultra-noisy environments; compared with UCC5390SCDWR, it delivers greater drive strength, wider supply flexibility, and full automotive qualification - making it the preferred choice for high-reliability, high-power, and safety-critical applications.
Availability
SI82E39BBC-IS1 is available at Aetrix Electronics and suitable for motor drives, onboard chargers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E39BBC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was engineered specifically for high-reliability isolated gate driving in electric vehicle powertrain, renewable energy, and industrial automation - combining silicon capacitive isolation with robust gate drive performance.
FAQ
What is the isolation rating of the SI82E39BBC-IS1 and which safety standards does it meet?
The SI82E39BBC-IS1 provides 6 kVRMS isolation for one minute and is certified to UL 1577, VDE 60747-17, CSA 62368-1, and CQC GB4943.1 for reinforced insulation. Its 1500 VRMS working voltage and 10 kV bipolar surge rating make it suitable for high-voltage industrial and automotive applications where safety-critical isolation is required. All certifications apply directly to the SI82E39BBC-IS1 device as shipped.
Does the SI82E39BBC-IS1 support both high-side/low-side and dual independent configurations?
No - the SI82E39BBC-IS1 is specifically configured as a High-Side/Low-Side driver with a single PWM input. It does not support dual independent inputs (VIA/VIB) like the Si82E29x series. Its pinout and truth table confirm PWM-driven complementary outputs with integrated dead time and overlap protection - optimized for half-bridge topologies.
How is dead time programmed on the SI82E39BBC-IS1, and what is the valid resistor range?
Dead time on the SI82E39BBC-IS1 is set by connecting an external resistor (RDT) between the DT pin and GNDI. The typical dead time follows tDT = 1.73 × RDT + 5.74 ns, where RDT ranges from 10 kΩ to 110 kΩ (yielding ~23 ns to ~200 ns). A 0.1 µF ceramic capacitor placed close to DT improves noise immunity. Connecting DT to VDDI disables dead time entirely.
What UVLO thresholds are implemented in the SI82E39BBC-IS1, and how do they behave independently?
The SI82E39BBC-IS1 features three independent UVLO monitors: VDDI (logic supply), VDDA (high-side driver), and VDDB (low-side driver). Each has hysteresis and exits UVLO at +0.5 V above its threshold. Thresholds are factory-set to 12 V for VDDI and 8 V for VDDA/VDDB (per Si82E39x ordering guide). If VDDA drops below 8 V, VOA is forced low regardless of PWM state - ensuring safe FET turn-off even if only one supply fails.
Is the SI82E39BBC-IS1 pin-compatible with other Si82Ex variants such as SI82E29 or SI82E89?
No - SI82E39BBC-IS1 uses the Si82E39x pinout (PWM + EN input), which differs from Si82E29x (VIA/VIB + EN) and Si82E89x (PWM + DIS). While all share the same SOIC-16 NB package, pin functions are not interchangeable: e.g., Pin 2 is VIA in Si82E29 but PWM in SI82E39BBC-IS1. Substitution requires PCB redesign and firmware logic updates.
SI82E39BBC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39BBC-IS1 FAQ
1.How can I place an order for SI82E39BBC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39BBC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39BBC-IS1 reliable?
The price and inventory of SI82E39BBC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39BBC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82E39BBC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39BBC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39BBC-IS1?
SI82E39BBC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39BBC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39BBC-IS1?
For technical support, including SI82E39BBC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39BBC-IS1 requirements.
6.How does Aetrix verify that SI82E39BBC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82E39BBC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39BBC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82E39BBC-IS1?
All SI82E39BBC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39BBC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39BBC-IS1 part is unused and in its original packaging.
Return procedure for SI82E39BBC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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