My Inquiry
My Account
Skyworks Solutions Inc. SI82E39BBE-IS3R
- Part No.:
- SI82E39BBE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39BBE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:1,350
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI82E39BBE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, designed for high-side/low-side half-bridge control in power converters and motor drives. It features CMOS inputs, <5 ns channel-to-channel skew, 200 kV/µs CMTI, 6 kVRMS isolation, and programmable dead time via external resistor. It drives SiC, GaN, IGBT, and MOSFET power switches in automotive-grade applications.
For engineers reviewing the SI82E39BBE-IS3R datasheet, SI82E39BBE-IS3R pinout, SI82E39BBE-IS3R application, or SI82E39BBE-IS3R equivalent, key selection criteria include its enable-input (EN) logic interface, universal/high-side-low-side pinout flexibility, UVLO thresholds (4/8/12/15 V), voltage-mode drive architecture, and AEC-Q100 qualification for automotive systems.
Technical Context
The SI82E39BBE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling robust noise immunity and precise timing. Its dual-channel architecture supports independent non-inverting inputs (VIA/VIB) and an active-high EN signal, with dead time programmed via DT pin resistance (10–110 kΩ).
It integrates per-channel undervoltage lockout (UVLO) on VDDI, VDDA, and VDDB, thermal shutdown with hysteresis, short-circuit clamping to VDDA/B, and active pull-down shutdown clamps on unpowered outputs - all operating across –40 °C to +125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, CSA 62368-1, VDE 60747-17 reinforced insulation requirements. |
| Channel-to-Channel Skew | <5 ns - ensures precise synchronous switching in half-bridge topologies to prevent shoot-through. |
| CMTI | >200 kV/µs - maintains signal integrity in high-dv/dt environments like SiC/GaN inverters. |
| Peak Output Current | 6 A sourcing/sinking - directly drives high-gate-charge power devices without external buffers. |
| Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controller logic levels. |
| Gate Supply Range | 5–30 V - supports wide-range biasing for SiC (15–20 V) and IGBT (15 V) gate drive requirements. |
| Operating Temperature | –40 °C to +125 °C - qualified for under-hood automotive and industrial ambient conditions. |
| UVLO Thresholds | 4 V, 8 V, 12 V, or 15 V - configurable per device variant to match gate driver supply rail stability margins. |
Pinout & Package
Narrow-body 16-pin SOIC (NB SOIC-16) package with creepage-enhanced layout for reinforced isolation. Pinout optimized for high-side/low-side half-bridge configuration with dedicated enable (EN) input.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting input for Channel A | Directly controls VOA output state; CMOS-compatible with deglitch filter option. |
| VIB | Non-inverting input for Channel B | Directly controls VOB output state; independent of VIA for dual-drive operation. |
| EN | Active-high enable | Asserting high enables both outputs; asserting low forces VOA/VOB low unconditionally. |
| DT | Dead time programming | Resistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); tied to VDDI disables dead time. |
| VDDA / GNDA | Channel A gate supply and ground | Isolated 5–30 V power domain for high-side or low-side output stage. |
| VDDB / GNDB | Channel B gate supply and ground | Independent isolated 5–30 V domain - enables asymmetric bootstrap or isolated supply designs. |
| VDDI / GNDI | Logic input supply and ground | 3–20 V domain with CMOS inputs; provides galvanic separation from gate drive domains. |
| VOA / VOB | Gate driver outputs | Voltage-mode outputs with 6 A peak drive; include short-circuit clamp and shutdown clamp. |
Key Features
| Feature | Design Value |
|---|---|
| Voltage Mode Drive | Uses external gate resistors (Rg) to precisely tune switching speed, EMI, and overshoot - no current-source complexity. |
| Programmable Dead Time | Adjustable via single resistor (DT-to-GND); prevents shoot-through in half-bridge without MCU intervention. |
| Per-Channel UVLO | Independent monitoring of VDDI, VDDA, and VDDB ensures safe turn-off if any supply drops below threshold. |
| Thermal Shutdown with Hysteresis | Triggers at TSD+ = 150 °C, resets at TSD– = 135 °C - prevents latch-up during transient overloads. |
| AEC-Q100 Qualified | Grade 1 (–40 °C to +125 °C) qualification confirms suitability for automotive powertrain and charging systems. |
| 1500 VRMS Working Voltage | Rated for continuous operation in 1200 V DC bus systems (e.g., EV onboard chargers, traction inverters). |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase inverter driving PMSM or induction motors in electric power steering or HVAC compressors. IC Role / Device Role / Timing Role: SI82E39BBE-IS3R provides isolated, synchronized high-side/low-side gate drive with programmable dead time to prevent shoot-through during PWM commutation. Use Value: <5 ns skew and 200 kV/µs CMTI ensure reliable switching at >100 kHz with SiC FETs, reducing system losses and thermal stress. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers handling 11–22 kW power levels. IC Role / Device Role / Timing Role: SI82E39BBE-IS3R isolates MCU PWM signals and drives high-frequency GaN half-bridges in totem-pole PFC and isolated LLC stages. Use Value: 6 kVRMS isolation and 1500 VRMS working voltage meet reinforced insulation requirements for 1000 V battery systems. |
| Uninterruptible Power Supplies | Industrial Motor Inverters |
|
Use Scenario: Online double-conversion UPS with IGBT-based inverter stage delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: SI82E39BBE-IS3R delivers robust gate drive with UVLO and thermal protection to sustain fault conditions without latch-up. Use Value: AEC-Q100 qualification and 10 kV bipolar surge rating enhance reliability in mission-critical backup power infrastructure. |
Use Scenario: Variable-frequency drives controlling 3–100 HP induction motors in pumps, fans, and conveyors. IC Role / Device Role / Timing Role: SI82E39BBE-IS3R interfaces PLC/PWM controllers with isolated gate drive for 600–1200 V IGBT modules. Use Value: Wide 5–30 V gate supply range supports standard 15 V IGBT gate bias while accommodating aging or ripple effects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8239BBE-IS3R | Same pinout, identical specs, but discontinued and superseded by SI82E39BBE-IS3R per Skyworks documentation. | No functional difference; direct replacement with updated manufacturing flow and extended lifecycle support. | Select SI82E39BBE-IS3R for new designs to ensure long-term availability and AEC-Q100 compliance. |
| TI UCC5390SCDWR | 3.3–15 V input, 5–33 V output, 10 A peak drive, 100 kV/µs CMTI, 5 kVRMS isolation, no EN pin (uses DIS only). | Better peak current for high-Ciss SiC FETs; lower CMTI limits use in ultra-fast switching; lacks EN logic polarity match. | Choose UCC5390SCDWR only when 10 A drive is mandatory and dead time can be managed externally; verify layout compatibility. |
Compared with SI82E39BBE-IS3R, SI8239BBE-IS3R offers identical functionality but lacks current AEC-Q100 support and long-term supply assurance, while UCC5390SCDWR trades isolation robustness and logic interface flexibility for higher peak current - making SI82E39BBE-IS3R optimal for automotive and high-reliability industrial half-bridge control.
Availability
SI82E39BBE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, uninterruptible power supplies, and industrial motor inverters requiring stable component supply, automotive-grade qualification, and reinforced isolation compliance.
Supply support for SI82E39BBE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, timing, and power management ICs.
The SI82E39BBE-IS3R belongs to Skyworks' Si82Ex family of isolated gate drivers, engineered specifically for high-reliability, high-speed power conversion in automotive electrification and industrial energy systems.
FAQ
What is the isolation rating and safety certification status of SI82E39BBE-IS3R?
SI82E39BBE-IS3R provides 6 kVRMS isolation for one minute and is certified to UL 1577, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1. It supports 1500 VRMS working voltage and 10 kV bipolar surge, meeting reinforced insulation requirements for 1200 V DC bus systems. These certifications are documented in the official Skyworks datasheet revision 206857C.
Does SI82E39BBE-IS3R support both high-side/low-side and dual independent configurations?
Yes, SI82E39BBE-IS3R uses a Universal pinout supporting both configurations. When DT is connected to GND, it operates as a high-side/low-side driver with programmable dead time. When DT is tied to VDDI, dead time and overlap protection are disabled, allowing independent VIA/VIB control of VOA/VOB as a dual driver - confirmed in Figures 2 and 18 of the datasheet.
What UVLO thresholds are implemented in SI82E39BBE-IS3R?
SI82E39BBE-IS3R features factory-configured UVLO thresholds of 4 V, 8 V, 12 V, or 15 V on VDDI, VDDA, and VDDB - each independently monitored. The specific threshold set for this part is 8 V on VDDI and 12 V on VDDA/VDDB, per Skyworks ordering guide section 10 and Table 10-1 in datasheet 206857C.
How does the EN pin function in SI82E39BBE-IS3R compared to DIS-based variants?
In SI82E39BBE-IS3R, the EN pin is active-high: asserting EN ≥2.0 V enables normal operation, while pulling EN ≤0.8 V forces VOA and VOB low within tDID (max 120 ns). This differs from DIS variants (e.g., SI82E29), where DIS is active-high disable. The EN logic matches common microcontroller GPIO behavior and simplifies fault-handling firmware design.
Is SI82E39BBE-IS3R suitable for driving GaN FETs, and what design considerations apply?
Yes, SI82E39BBE-IS3R is explicitly validated for GaN FETs per the datasheet Applications section and AN486 reference design. Key considerations include using low-inductance gate loops, selecting Rg to limit dV/dt (≤50 V/ns), leveraging its 6 A peak drive for fast turn-on, and relying on its >200 kV/µs CMTI to reject noise in high-frequency GaN switching (up to 2 MHz).
SI82E39BBE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39BBE-IS3R FAQ
1.How can I place an order for SI82E39BBE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39BBE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39BBE-IS3R reliable?
The price and inventory of SI82E39BBE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39BBE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E39BBE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39BBE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39BBE-IS3R?
SI82E39BBE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39BBE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39BBE-IS3R?
For technical support, including SI82E39BBE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39BBE-IS3R requirements.
6.How does Aetrix verify that SI82E39BBE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E39BBE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39BBE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E39BBE-IS3R?
All SI82E39BBE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39BBE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39BBE-IS3R part is unused and in its original packaging.
Return procedure for SI82E39BBE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI82E39BBE-IS3R Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
