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Skyworks Solutions Inc. SI82E39BCE-IS3R
- Part No.:
- SI82E39BCE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E39BCE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:4,607
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Product details
Overview
SI82E39BCE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with 6 A peak output current, universal configuration (independent VIA/VIB inputs), and enable (EN) control logic. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS reinforced isolation for driving SiC/GaN MOSFETs and IGBTs in high-frequency half-bridge inverters.
For engineers reviewing the SI82E39BCE-IS3R datasheet, SI82E39BCE-IS3R pinout, SI82E39BCE-IS3R application, or SI82E39BCE-IS3R equivalent, key selection criteria include its NB SOIC-16 package, programmable dead time via DT pin, UVLO thresholds at 4/8/12/15 V, voltage-mode drive architecture, and automotive-grade AEC-Q100 qualification.
Technical Context
The SI82E39BCE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling across two independent channels, enabling precise timing control and fault tolerance. Its universal input architecture accepts separate non-inverting logic signals on VIA and VIB, with EN enabling synchronous operation of both outputs.
Dead time is resistor-programmable (10–110 kΩ on DT pin) and disables entirely when DT connects to VDDI-converting the device into a dual independent driver without overlap protection. UVLO monitors VDDI, VDDA, and VDDB independently, ensuring safe startup/shutdown sequencing and preventing erroneous switching during brownout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements. |
| Channel-to-Channel Skew | <5 ns - enables precise timing alignment critical for high-efficiency half-bridge and three-phase inverter topologies. |
| CMTI | >200 kV/µs - ensures robust noise immunity in fast-switching SiC/GaN power stages with high dV/dt transients. |
| Peak Output Current | 6 A sourcing/sinking - supports direct drive of high-gate-charge wide-bandgap FETs without external buffers. |
| Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controller logic levels without level-shifting circuitry. |
| Gate Supply Range | 5–30 V - allows flexible biasing for unipolar or bipolar gate drive configurations (e.g., +15 V/–5 V). |
| Operating Temperature | –40 to +125 °C - qualified per AEC-Q100 Grade 1 for under-hood automotive and industrial motor control environments. |
| UVLO Thresholds | 4, 8, 12, or 15 V options - configurable per variant to match system rail sequencing and prevent partial turn-on. |
Pinout & Package
Narrow-body 16-pin SOIC (NB SOIC-16) package with 8.0 mm creepage/clearance and reinforced insulation barrier between logic and power domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | Accepts CMOS-level signal; drives VOA directly when enabled and not in UVLO. |
| VIB | Non-inverting logic input for Channel B | Independent control path for VOB; enables true dual-driver operation in universal mode. |
| EN | Active-high enable input | Asserting high enables both outputs; asserting low forces VOA/VOB low regardless of VIA/VIB state. |
| DT | Dead time programming terminal | Resistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); tie to VDDI to disable dead time and overlap protection. |
| VDDA / GNDA | Channel A gate driver supply and ground | Isolated 5–30 V power domain for high-side or low-side FET gate drive; monitored by independent UVLO. |
| VDDB / GNDB | Channel B gate driver supply and ground | Independent isolated supply domain; supports asymmetric rail configurations (e.g., +15 V for high-side, –5 V for low-side). |
| VDDI / GNDI | Logic input supply and ground | 3–20 V digital interface domain; provides isolation barrier reference for CMOS inputs and internal modulator. |
| VOA / VOB | Gate driver outputs | Voltage-mode outputs with active pull-down clamp; sink/source up to 6 A with external gate resistors. |
Key Features
| Feature | Design Value |
|---|---|
| Universal input architecture | Separate VIA/VIB inputs allow independent control of high-side and low-side FETs without shared PWM constraints. |
| Voltage-mode drive with gate resistor tuning | External Rg selection enables precise optimization of switching speed, EMI, and overshoot-no current-source complexity. |
| Programmable dead time with overlap protection | Hardware-enforced dead time prevents shoot-through; automatic overlap clamping activates if both inputs go high simultaneously. |
| Independent triple UVLO monitoring | VDDI, VDDA, and VDDB each have dedicated undervoltage detection-ensures safe behavior during asymmetric power loss. |
| Shutdown clamp on unpowered outputs | Active pull-down to GNDA/GNDB prevents parasitic turn-on when gate supplies are off-critical for system safety during fault recovery. |
| AEC-Q100 Grade 1 qualification | Validated for automotive applications including onboard chargers and traction inverters with full temperature and lifetime reliability testing. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase BLDC or PMSM motor control in EV traction inverters and industrial servo drives. IC Role / Device Role / Timing Role: Dual isolated gate driver providing synchronized, skew-controlled drive to high-side and low-side SiC FETs in each half-bridge leg. Use Value: <5 ns skew and 200 kV/µs CMTI maintain timing integrity and prevent shoot-through during 100+ kHz switching with >50 V/ns bus transients. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW EV onboard chargers. IC Role / Device Role / Timing Role: Isolated gate driver for interleaved totem-pole PFC and CLLC resonant DC/DC stages using GaN HEMTs. Use Value: 6 kVRMS isolation and reinforced insulation certification (UL/VDE/CSA) satisfy functional safety requirements for primary-secondary separation in Class II systems. |
| Uninterruptible Power Supplies | Isolated Switched-Mode Supplies |
|
Use Scenario: High-efficiency double-conversion UPS systems with IGBT-based inverters and battery charging circuits. IC Role / Device Role / Timing Role: Gate driver for full-bridge inverter stage delivering clean 50/60 Hz sine wave output under dynamic load. Use Value: Independent UVLO on VDDA/VDDB ensures graceful shutdown if one gate supply fails-prevents asymmetric conduction and thermal runaway. |
Use Scenario: High-density isolated DC/DC modules (e.g., 48 V to 12 V/1 V) used in telecom and server power supplies. IC Role / Device Role / Timing Role: Compact isolated driver for synchronous rectification and active clamp circuits in phase-shifted full-bridge topologies. Use Value: Narrow-body SOIC-16 footprint minimizes PCB area while maintaining 8.0 mm creepage-enabling high-power density without external isolation components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs SI8239BD-IS3R | Same family, identical pinout and specs, but with disable (DIS) instead of enable (EN) logic; otherwise functionally identical. | Requires inverted control signal polarity; suitable where system-level fault handling uses active-low disable assertion. | Select SI82E39BCE-IS3R when enable-active-high control aligns with MCU GPIO or FPGA output logic. |
| Infineon 1ED34xxMX12H | Single-channel, 6 A isolated driver with integrated Miller clamp; no dead time programming or universal input mode. | Requires two devices for dual-channel operation; lacks independent UVLO per channel and programmable dead time. | Choose SI82E39BCE-IS3R when board space, timing precision, and single-package dual-channel integration are critical. |
Compared with SI8239BD-IS3R, SI82E39BCE-IS3R offers native EN-active-high compatibility with standard microcontroller outputs; compared with Infineon 1ED34xxMX12H, it integrates both channels, dead time control, and independent UVLO in one certified package-reducing component count and layout complexity in high-reliability inverters.
Availability
SI82E39BCE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, uninterruptible power supplies, and isolated switched-mode supplies requiring stable component supply, automotive-grade reliability, and long-term lifecycle support.
Supply support for SI82E39BCE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was designed specifically for high-reliability, high-speed isolated gate driving in SiC/GaN-based power conversion systems-emphasizing timing accuracy, noise immunity, and safety certification compliance.
FAQ
What is the isolation rating and safety certification status of the SI82E39BCE-IS3R?
The SI82E39BCE-IS3R provides 6 kVRMS isolation for one minute and is certified to UL 1577, VDE 60747-17, CSA 62368-1, and GB4943.1 for reinforced insulation. It supports 1500 VRMS working voltage and 10 kV bipolar surge, meeting requirements for industrial and automotive applications where galvanic separation between control and power domains is mandatory.
How does the dead time programming work on the SI82E39BCE-IS3R?
The SI82E39BCE-IS3R uses an external resistor (RDT) connected between the DT pin and GNDI to set dead time, with values from 10 kΩ to 110 kΩ yielding ~18 ns to ~200 ns delay. Connecting DT to VDDI disables dead time insertion and overlap protection, allowing the SI82E39BCE-IS3R to operate as a dual independent gate driver rather than a high-side/low-side pair.
Does the SI82E39BCE-IS3R support both unipolar and bipolar gate drive configurations?
Yes, the SI82E39BCE-IS3R supports both unipolar (e.g., 0 V/15 V) and bipolar (e.g., –5 V/+15 V) gate drive voltages. Its VDDA and VDDB supplies are fully independent, enabling asymmetric rail configurations. The voltage-mode output stage works with standard gate resistors to deliver precise rise/fall times and controlled overshoot in either mode.
What is the purpose of the shutdown clamp feature in the SI82E39BCE-IS3R?
The shutdown clamp in the SI82E39BCE-IS3R actively pulls VOA and VOB to GNDA/GNDB when their respective gate supplies (VDDA or VDDB) are unpowered. This prevents parasitic turn-on of power FETs due to transient coupling-a critical safety feature during power-up, fault recovery, or asymmetric supply sequencing in multi-rail systems.
Is the SI82E39BCE-IS3R pin-compatible with other Si82Ex variants like SI82E29 or SI82E89?
No-SI82E39BCE-IS3R uses the universal input configuration (VIA/VIB) with EN control and NB SOIC-16 packaging. SI82E29x uses DIS control, SI82E89x uses PWM input, and SI82E99x combines PWM with DIS. While all share the same NB SOIC-16 footprint and isolation architecture, input logic, pin functions, and truth tables differ significantly; direct substitution requires schematic and firmware validation.
SI82E39BCE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E39BCE-IS3R FAQ
1.How can I place an order for SI82E39BCE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E39BCE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E39BCE-IS3R reliable?
The price and inventory of SI82E39BCE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E39BCE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E39BCE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E39BCE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E39BCE-IS3R?
SI82E39BCE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E39BCE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E39BCE-IS3R?
For technical support, including SI82E39BCE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E39BCE-IS3R requirements.
6.How does Aetrix verify that SI82E39BCE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E39BCE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E39BCE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E39BCE-IS3R?
All SI82E39BCE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E39BCE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E39BCE-IS3R part is unused and in its original packaging.
Return procedure for SI82E39BCE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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