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Skyworks Solutions Inc. SI82E89ABC-IS1R
- Part No.:
- SI82E89ABC-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E89ABC-IS1R.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
- Payment:
- Shipping:
Inventory:2,437
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Product details
Overview
SI82E89ABC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in automotive-grade power inverters.
For engineers reviewing the SI82E89ABC-IS1R datasheet, SI82E89ABC-IS1R pinout, SI82E89ABC-IS1R application, or SI82E89ABC-IS1R equivalent, this page delivers verified functional identity, validated SOIC-14 pin mapping, confirmed UVLO thresholds (4/8/12/15 V), CMTI >200 kV/µs, and AEC-Q100 qualification - all critical for high-reliability motor drive and onboard charger designs.
Technical Context
The SI82E89ABC-IS1R implements a PWM-input, disable-controlled (DIS) high-side/low-side gate driver architecture using capacitive silicon-dioxide isolation. Its RF-modulated OOK signal path enables precise timing control with minimal propagation delay variation across temperature and lifetime.
It features integrated dead time programming via external resistor on DT pin, independent UVLO monitoring per supply rail (VDDI, VDDA, VDDB), and active shutdown clamps on both outputs to prevent parasitic turn-on during unpowered conditions - all operating within –40 to 125 °C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577), reinforced insulation per VDE 60747-17, CSA 62368-1, and CQC GB4943.1 |
| Output Drive Strength | 6 A peak sourcing/sinking - sufficient to directly drive high-Qg SiC FETs (e.g., 100 nC) at ≤100 kHz switching without external buffers |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side gate signals to prevent shoot-through in half-bridge topologies |
| CMTI | >200 kV/µs - maintains signal integrity under fast dv/dt transients common in SiC/GaN-based converters |
| UVLO Thresholds | Configurable 4 V / 8 V / 12 V / 15 V - allows matching to specific gate driver supply rails (e.g., 12 V for IGBTs, 15 V for SiC) |
| Operating Temperature | –40 to 125 °C - qualified per AEC-Q100 Grade 1, enabling use in under-hood automotive power electronics |
| ESD Rating | 4 kV HBM - protects against handling-induced ESD during assembly and test |
Pinout & Package
Narrow-body 14-pin SOIC package (SOIC-14 WB), creepage ≥8.3 mm, clearance ≥8.3 mm, reinforced insulation barrier between logic and power domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Logic input power supply | 3–20 V CMOS-compatible digital supply; powers internal isolator and logic circuits |
| GNDI | Logic input ground | Reference for all digital inputs; galvanically isolated from GNDA/GNDB |
| PWM | Single PWM input for both channels | Drives VOA high / VOB low when high; VOA low / VOB high when low - enables synchronous half-bridge control |
| DIS | Active-high disable control | Forces VOA and VOB low regardless of PWM state - used for fast fault shutdown in safety-critical systems |
| DT | Dead time programming input | Resistor-to-GND sets dead time (10–110 kΩ → ~18–200 ns); connecting to VDDI disables dead time and overlap protection |
| VDDA | High-side gate driver supply | 5–30 V supply for VOA output stage; supports bootstrap or isolated supply configurations |
| GNDA | High-side gate driver ground | Return path for high-side output; floating reference tied to source of high-side switch |
| VDDB | Low-side gate driver supply | 5–30 V supply for VOB output stage; typically referenced to system power ground |
| GNDB | Low-side gate driver ground | System ground reference for low-side output; electrically isolated from GNDA |
| VOA | High-side gate driver output | Voltage-mode output driving high-side FET gate; includes short-circuit clamp to VDDA |
| VOB | Low-side gate driver output | Voltage-mode output driving low-side FET gate; includes shutdown clamp to GNDB when unpowered |
| NC | No connection | Unbonded pin - must remain unconnected per datasheet; no internal circuitry attached |
Key Features
| Feature | Design Value |
|---|---|
| CMOS input with deglitch filter | Rejects sub-100 ns noise pulses while adding only 15 ns typical propagation delay - improves immunity in noisy motor drive environments |
| Voltage Mode Drive | Enables gate resistor tuning for optimized trade-off between switching speed, overshoot, and EMI - no current-source complexity required |
| Programmable dead time with overlap protection | Prevents shoot-through by forcing both outputs low on simultaneous high inputs - eliminates need for external logic or timing ICs |
| Independent UVLO per supply rail | Ensures safe operation even if only one gate supply fails - VOA remains low if VDDA drops below threshold while VDDB stays valid |
| Thermal shutdown with hysteresis | Triggers at 150 °C (TSD+), resets at 135 °C (TSD–) - provides robust overtemperature protection without nuisance tripping |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: 3-phase inverter controlling PMSM/BLDC motors in EV traction or industrial servo systems. IC Role / Device Role / Timing Role: High-side/low-side gate driver for each half-bridge leg, synchronizing PWM edges with <5 ns skew to minimize torque ripple and conduction losses. Use Value: 6 A drive strength enables direct SiC FET control at 100 kHz, while 200 kV/µs CMTI prevents false triggering during high dv/dt commutation events. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers with dual active bridge (DAB) topology. IC Role / Device Role / Timing Role: Isolated gate driver for high-frequency GaN half-bridges on primary and secondary sides, enforcing dead time to avoid cross-conduction. Use Value: Programmable DT pin allows precise dead time tuning (18–200 ns) to match GaN FET switching characteristics and optimize ZVS performance. |
| Power Inverters | Uninterruptible Power Supplies (UPS) |
|
Use Scenario: Solar string inverters and energy storage system (ESS) inverters requiring high-efficiency, high-reliability DC/AC conversion. IC Role / Device Role / Timing Role: Dual-channel isolated driver for IGBT/SiC modules in three-level NPC or T-type topologies, providing reinforced isolation per IEC 62109. Use Value: 6 kVRMS isolation rating and AEC-Q100 qualification support long-term field reliability in outdoor-rated inverters exposed to humidity and thermal cycling. |
Use Scenario: Online double-conversion UPS systems where fast fault response and galvanic isolation between control and power stages are mandatory. IC Role / Device Role / Timing Role: Gate driver for IGBT-based inverter stage, using DIS pin for immediate shutdown upon detection of overcurrent or bus overvoltage. Use Value: Active shutdown clamp on VOA/VOB prevents unintended turn-on during brownout or controller reset - eliminating need for external pull-down resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Silicon Labs Si82E89AD-IS1R | Dual-channel, same pinout and specs, but with EN (enable) instead of DIS (disable) logic polarity | Requires inverted control signal for fault shutdown; less intuitive for safety-critical fast-disable paths | Select SI82E89ABC-IS1R when active-high DIS simplifies integration with existing fault logic or ISO-SPI safety monitors |
| TI UCC5350MCDWVR | Single-channel, 10 A drive, 3.75 kVRMS isolation, no programmable dead time; uses split-output architecture | Requires two devices for half-bridge; lacks integrated overlap protection and DT programming | Choose SI82E89ABC-IS1R for space-constrained half-bridge designs needing single-package integration, dead time control, and overlap protection |
Compared with Si82E89AD-IS1R, SI82E89ABC-IS1R offers more deterministic fault response via DIS; compared with UCC5350MCDWVR, it reduces component count and PCB area while delivering tighter skew control and built-in shoot-through prevention.
Availability
SI82E89ABC-IS1R is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial motor drives, and renewable energy inverters requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle support.
Supply support for SI82E89ABC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power systems, delivering superior CMTI, lifetime stability, and integration for SiC/GaN-based motor control and energy conversion.
FAQ
What is the isolation voltage rating of the SI82E89ABC-IS1R?
The SI82E89ABC-IS1R has a certified 6 kVRMS isolation rating for one minute per UL 1577, with reinforced insulation validated to VDE 60747-17, CSA 62368-1, and CQC GB4943.1. Its working voltage is rated at 1500 VRMS, making it suitable for 1200 V SiC and 650 V GaN systems with margin.
Does the SI82E89ABC-IS1R support both high-side/low-side and dual independent configurations?
The SI82E89ABC-IS1R is specifically configured as a high-side/low-side driver with PWM input and DIS control. It does not support universal (independent VIA/VIB) mode - that functionality is implemented in Si82E29x/Si82E39x variants. The SI82E89ABC-IS1R's pinout and truth table confirm fixed PWM-to-VOA/VOB mapping.
How is dead time programmed on the SI82E89ABC-IS1R?
Dead time is set by connecting an external resistor (RDT) between the DT pin and GNDI. Values from 10 kΩ to 110 kΩ yield typical dead times of 18 ns to 200 ns per Equation 1 in the datasheet. Connecting DT to VDDI disables dead time insertion and overlap protection, reverting the device to dual-driver behavior - though this is not the intended mode for SI82E89ABC-IS1R.
What UVLO thresholds are implemented in the SI82E89ABC-IS1R?
The SI82E89ABC-IS1R includes factory-configured UVLO thresholds of 4 V, 8 V, 12 V, and 15 V on VDDI, VDDA, and VDDB supplies. These are fixed per device variant and cannot be adjusted externally. The specific thresholds for this part are documented in Skyworks' ordering guide as matching automotive-grade 12 V gate drive requirements.
Is the SI82E89ABC-IS1R qualified for automotive applications?
Yes, the SI82E89ABC-IS1R is AEC-Q100 Grade 1 qualified (–40 to +125 °C) and manufactured using automotive-specific process flows. It carries full safety certifications including UL, VDE, CSA, and CQC for reinforced insulation - meeting requirements for EV traction inverters, onboard chargers, and DC-DC converters.
SI82E89ABC-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E89ABC-IS1R FAQ
1.How can I place an order for SI82E89ABC-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E89ABC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E89ABC-IS1R reliable?
The price and inventory of SI82E89ABC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E89ABC-IS1R is usually 5 days.
3.What payment methods are accepted for SI82E89ABC-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E89ABC-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E89ABC-IS1R?
SI82E89ABC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E89ABC-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E89ABC-IS1R?
For technical support, including SI82E89ABC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E89ABC-IS1R requirements.
6.How does Aetrix verify that SI82E89ABC-IS1R is sourced from the original manufacturer or authorized distributors?
All SI82E89ABC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E89ABC-IS1R meets industry standards.
7.What is the process for return or replacement of SI82E89ABC-IS1R?
All SI82E89ABC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E89ABC-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E89ABC-IS1R part is unused and in its original packaging.
Return procedure for SI82E89ABC-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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