Skyworks Solutions Inc. SI82E89ABE-IS3R

Overview

SI82E89ABE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and features programmable dead time, UVLO (12 V threshold), and CMOS inputs with deglitch filtering-designed for half-bridge SiC/GaN FET control in onboard chargers and motor drives.

For engineers reviewing the SI82E89ABE-IS3R datasheet, SI82E89ABE-IS3R pinout, SI82E89ABE-IS3R application, or SI82E89ABE-IS3R equivalent, key selection criteria include its disable-input (DIS) logic interface, SOIC-16 narrow-body package, 200 kV/µs CMTI, automotive-grade AEC-Q100 qualification, and compatibility with bootstrap high-side power architectures.

Technical Context

The SI82E89ABE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling precise timing control and fault-tolerant signal transfer across 6 kVRMS barrier. Its architecture integrates independent UVLO monitors per VDDI, VDDA, and VDDB, plus active shutdown clamps on both outputs to prevent parasitic turn-on during unpowered states.

This variant uses PWM input mode with active-high DIS control, supports dead time programming via external resistor on DT pin (10–110 kΩ), and delivers voltage-mode drive with unipolar output capability. It is configured as a High-Side/Low-Side driver per functional block diagram Figure 16 and truth table Table 3.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC (SOIC-16 NB) package with 1.27 mm pitch, creepage ≥8.3 mm, and reinforced insulation barrier between logic and power sides.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with SIL1225CD-IM and UCC5390SCD, the SI82E89ABE-IS3R uniquely combines AEC-Q100 qualification, 12 V UVLO, DIS-controlled fast disable, and integrated dead time/overlap protection - making it optimal for automotive OBC and high-reliability industrial inverters where timing precision and safety compliance are critical.

Availability

SI82E89ABE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor drives, uninterruptible power supplies, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for SI82E89ABE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, timing, and power management ICs.

The Si82Ex family was designed specifically for high-reliability isolated gate driving in SiC/GaN-based power converters, emphasizing timing accuracy, CMTI robustness, and automotive qualification - with SI82E89ABE-IS3R targeting high-side/low-side half-bridge control.

FAQ

What is the function of the DT pin on the SI82E89ABE-IS3R?

The DT pin on the SI82E89ABE-IS3R programs dead time between VOA and VOB transitions using an external resistor to GND (10–110 kΩ), yielding 17–110 ns delay. When tied to VDDI, dead time and overlap protection are disabled, allowing universal dual-driver operation. This pin directly controls shoot-through prevention in half-bridge topologies and is validated in datasheet Figure 18 and Equation 1.

Does the SI82E89ABE-IS3R support bootstrap high-side power supply?

Yes, the SI82E89ABE-IS3R supports bootstrap high-side power supply via VDDA. Datasheet Figure 20 shows a typical bootstrap implementation using diode D1 and capacitors C4/C5 referenced to GNDA. The device's shutdown clamp on VOA ensures safe operation during bootstrap capacitor recharge cycles, and its 30 V max VDDA rating accommodates typical 12–15 V bootstrap rails.

What safety certifications does the SI82E89ABE-IS3R hold?

The SI82E89ABE-IS3R holds UL 1577 recognition (6000 VRMS, 1 min), VDE 60747-17 (reinforced insulation), CSA 62368-1 (reinforced insulation), CSA 60601-1 (2 MOPP), and CQC GB4943.1 (reinforced insulation). These certifications are explicitly listed in the "Safety Regulator Approvals" section of the datasheet and apply to the SI82E89x family including SI82E89ABE-IS3R.

How does the DIS input behave during UVLO conditions on SI82E89ABE-IS3R?

When VDDI is below its UVLO threshold (VDDIUV–), the SI82E89ABE-IS3R ignores the DIS input and forces VOA and VOB low regardless of DIS state. The DIS input only becomes active once VDDI exceeds VDDIUV+, as confirmed in datasheet Section 4.4.2 and Truth Table 3. This ensures fail-safe behavior during power-up or brown-out events.

What is the maximum gate supply voltage supported by SI82E89ABE-IS3R?

The SI82E89ABE-IS3R supports a maximum gate supply voltage of 30 V on both VDDA and VDDB pins, as specified in the "Absolute Maximum Ratings" table (Section 6.1) and reiterated in Section 1 overview. This allows direct interfacing with 15 V or 20 V gate drive rails common in SiC and GaN applications without level-shifting.