Skyworks Solutions Inc. SI82E89AEC-IS1R

Overview

SI82E89AEC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN FET control in automotive-grade power inverters.

For engineers reviewing the SI82E89AEC-IS1R datasheet, SI82E89AEC-IS1R pinout, SI82E89AEC-IS1R application, or SI82E89AEC-IS1R equivalent, this page delivers verified electrical parameters, safety-certified isolation specs, dead-time programmability, UVLO thresholds, and automotive qualification details critical for high-reliability motor drive and onboard charger designs.

Technical Context

The SI82E89AEC-IS1R implements a PWM-input, disable-controlled (DIS) high-side/low-side gate driver architecture using Skyworks' silicon-dioxide capacitive isolation. Its differential RF-modulated signal path delivers 200 kV/μs CMTI and stable timing across temperature.

It features independent UVLO monitoring on VDDI (4 V/5.5 V), VDDA (8 V/9.5 V), and VDDB (8 V/9.5 V), plus integrated shutdown clamp and short-circuit protection. The DT pin accepts 10–110 kΩ resistor to program dead time per Equation 1 (t_DT = 1.73 × R_DT + 5.74 ns), with overlap protection activated when both inputs go high simultaneously.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC package (7.5 mm × 10.3 mm, 1.27 mm pitch) with creepage ≥8.3 mm and clearance ≥7.8 mm per IEC 60664-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.

Compared with Si82E89AD-IS1R, SI82E89AEC-IS1R provides identical isolation and timing performance but uses DIS logic for immediate fault shutdown without signal inversion. Against UCC5390SCD, it delivers 50% higher peak drive and deterministic dead time control - critical for high-frequency SiC/GaN systems where firmware latency is unacceptable.

Availability

SI82E89AEC-IS1R is available at Aetrix Electronics and suitable for automotive onboard chargers, traction inverters, solar microinverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant isolation.

Supply support for SI82E89AEC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si82Ex family was engineered specifically for high-reliability, high-efficiency power conversion in automotive and industrial systems - delivering silicon-isolated gate drivers that replace aging optocoupler-based solutions with superior CMTI, lifetime, and thermal stability.

FAQ

What is the isolation voltage rating of the SI82E89AEC-IS1R and which safety standards does it meet?

The SI82E89AEC-IS1R is rated for 6 kVRMS isolation for one minute and complies with UL 1577, VDE 60747-17 (reinforced insulation), CSA 62368-1, and CSA 60601-1 (2 MOPP). These certifications confirm its suitability for medical and automotive applications requiring reinforced isolation barriers, including EV onboard chargers and traction inverters where galvanic separation between control and power domains is mandatory.

How does the DT pin function in the SI82E89AEC-IS1R, and what resistor value yields 50 ns dead time?

The DT pin in the SI82E89AEC-IS1R programs dead time by sinking current through an external resistor to GNDI. Using Equation 1 (t_DT = 1.73 × R_DT + 5.74 ns), a 50 ns dead time requires R_DT ≈ 25.7 kΩ. A standard 26.1 kΩ ±1% resistor achieves this precisely. Connecting DT to VDDI disables dead time insertion entirely, reconfiguring SI82E89AEC-IS1R as a dual independent driver.

Does the SI82E89AEC-IS1R support both unipolar and bipolar gate drive voltages?

Yes, the SI82E89AEC-IS1R supports unipolar (e.g., 0 V / +15 V) and bipolar (e.g., –5 V / +15 V) gate drive configurations. Its voltage-mode output architecture allows VDDA and VDDB to be independently set - for example, VDDA = +15 V and GNDA = –5 V yields –5 V / +15 V swing. This enables enhanced dV/dt immunity and faster turn-off for SiC/GaN FETs in high-noise power stages.

What is the purpose of the shutdown clamp feature in the SI82E89AEC-IS1R, and when does it activate?

The shutdown clamp in the SI82E89AEC-IS1R is an active pull-down circuit connecting VOA to GNDA and VOB to GNDB when VDDA or VDDB falls below UVLO threshold. It activates during power sequencing or fault conditions to prevent parasitic turn-on of FETs due to Miller capacitance coupling - a critical safeguard in half-bridge topologies where unpowered gate drivers could otherwise allow shoot-through.

Is the SI82E89AEC-IS1R pin-compatible with other Si82Ex family members such as the Si82E89AD-IS1R?

Yes, the SI82E89AEC-IS1R and Si82E89AD-IS1R share identical pinout, package (SOIC-16), and electrical specifications - differing only in control logic: SI82E89AEC-IS1R uses active-high DIS, while SI82E89AD-IS1R uses active-high EN. This allows direct PCB replacement when system-level fault signaling polarity matches the selected variant, with no layout changes required.