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Skyworks Solutions Inc. SI82E89AGC-IS1
- Part No.:
- SI82E89AGC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E89AGC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED VALUE
- Quantity:
- Payment:
- Shipping:
Inventory:3,197
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Product details
Overview
SI82E89AGC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and features programmable dead time via external resistor for half-bridge motor inverter applications.
For engineers reviewing the SI82E89AGC-IS1 datasheet, SI82E89AGC-IS1 pinout, SI82E89AGC-IS1 application, or SI82E89AGC-IS1 equivalent, this page delivers verified technical context, validated pin functions, confirmed safety certifications (UL 1577, VDE 60747-17), real-world timing behavior, and precise alternative selection guidance for SiC/GaN half-bridge designs.
Technical Context
The SI82E89AGC-IS1 implements RF-modulated capacitive isolation using dual silicon dioxide barriers, enabling 200 kV/µs CMTI and stable timing across temperature. Its PWM-input architecture drives both channels synchronously with overlap protection triggered by simultaneous high inputs.
Dead time is set by an external resistor on the DT pin (10–110 kΩ), generating 1.73×RDT + 5.74 ns delay; connecting DT to VDDI disables dead time and overlap protection, converting operation to dual independent drivers. UVLO thresholds are fixed at 4 V (VDDI), 8 V (VDDA), and 8 V (VDDB) for robust startup/shutdown control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements. |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side outputs in half-bridge switching. |
| Peak Output Current | ±6 A - sufficient to drive high-gate-charge SiC FETs and GaN HEMTs with fast turn-on/turn-off. |
| CMTI | >200 kV/µs - prevents false triggering in noisy high-dV/dt power converter environments. |
| Logic Input Supply Range | 3–20 V - supports direct interface with 3.3 V, 5 V, and 15 V controllers without level shifting. |
| Gate Supply Range | 5–30 V - enables flexible biasing for 12 V and 15 V gate drive, including bootstrap configurations. |
| Operating Temperature | –40 to +125 °C - qualified per AEC-Q100 Grade 1 for automotive onboard chargers and traction inverters. |
| UVLO Thresholds | VDDI = 4 V, VDDA = 8 V, VDDB = 8 V - prevents erratic switching during brown-out conditions. |
Pinout & Package
Narrow-body 16-pin SOIC package (GC suffix), with creepage/clearance optimized for reinforced insulation. Pin layout supports high-side/low-side half-bridge topology with dedicated PWM input and disable (DIS) control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Logic input power supply | 3–20 V supply for internal digital circuitry; powers isolation modulator and input logic. |
| GNDI | Logic input ground | Reference for all digital inputs; galvanically isolated from gate driver grounds. |
| PWM | Single logic input for both channels | Drives VOA high / VOB low when high; VOA low / VOB high when low - synchronous complementary mode. |
| DIS | Active-high disable control | Forces VOA and VOB low unconditionally; used for fault shutdown without affecting controller state. |
| DT | Dead time programming input | Resistor-to-GND sets dead time (1.73×RDT + 5.74 ns); tied to VDDI to disable dead time and overlap protection. |
| VDDA | High-side gate driver supply | 5–30 V supply for channel A output stage; supports bootstrap or isolated supply topologies. |
| GNDA | High-side gate driver ground | Local return for high-side output; isolated from GNDI and GNDB to maintain barrier integrity. |
| VDDB | Low-side gate driver supply | 5–30 V supply for channel B; referenced to system ground in standard half-bridge layouts. |
| GNDB | Low-side gate driver ground | System ground reference for low-side output; electrically common with power stage source node. |
| VOA | High-side gate driver output | ±6 A voltage-mode output driving high-side switch gate; includes short-circuit clamp to VDDA. |
| VOB | Low-side gate driver output | ±6 A voltage-mode output driving low-side switch gate; includes shutdown clamp to GNDB. |
Key Features
| Feature | Design Value |
|---|---|
| RF-modulated capacitive isolation | Dual SiO₂ barriers enable 6 kVRMS rating, 200 kV/µs CMTI, and <5 ns skew - superior to optocouplers in lifetime and temp stability. |
| Programmable dead time with overlap protection | Resistor-set delay (10–110 kΩ) inserts dead time before rising edges; simultaneous high inputs force both outputs low to prevent shoot-through. |
| Voltage-mode gate drive | Output behaves as controlled voltage source - gate resistor selection directly tunes dV/dt, EMI, and overshoot without current-loop complexity. |
| AEC-Q100 Grade 1 qualification | Validated for automotive use up to +125 °C ambient; manufactured in automotive-specific process flow with zero unknown failure modes. |
| Integrated shutdown clamp | Active pull-down to GNDA/GNDB when VDDA/VDDB is unpowered - eliminates parasitic turn-on of MOSFETs/IGBTs during power sequencing. |
| Fixed 4 V / 8 V / 8 V UVLO thresholds | Prevents partial turn-on during undervoltage events; independent monitoring per supply rail ensures safe gate drive under asymmetric brownouts. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase inverter driving PMSM or induction motors in EV traction or industrial servo systems. IC Role / Device Role / Timing Role: High-side/low-side gate driver providing synchronized, shoot-through-protected PWM outputs to SiC FET half-bridges. Use Value: <5 ns skew and 200 kV/µs CMTI ensure clean commutation at >100 kHz switching frequencies with minimal timing margin loss. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in automotive OBC modules with 650 V SiC switches. IC Role / Device Role / Timing Role: Isolated gate driver delivering 6 A peak current to high-side SiC FETs while maintaining 6 kVRMS reinforced insulation. Use Value: AEC-Q100 qualification and –40 to +125 °C operation guarantee reliability across full vehicle thermal envelope. |
| Power Inverters | Uninterruptible Power Supplies (UPS) |
|
Use Scenario: Solar string inverters or energy storage systems using 1200 V SiC half-bridges operating at 50–100 kHz. IC Role / Device Role / Timing Role: Dual-channel isolated driver with programmable dead time ensuring safe switching transitions under variable load and grid conditions. Use Value: DT pin resistor tuning allows precise dead time optimization for different SiC FET gate charges and bus voltages. |
Use Scenario: Online double-conversion UPS with IGBT-based inverter stage requiring robust isolation and fast fault response. IC Role / Device Role / Timing Role: Gate driver with active DIS input enabling sub-microsecond shutdown during overcurrent or overtemperature events. Use Value: Integrated shutdown clamp prevents IGBT latch-up during AC line dropout or DC bus collapse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si82E89AD-IS1 | Narrow-body SOIC-16 with EN (enable) instead of DIS (disable); identical isolation, drive strength, and timing specs. | Requires active-high enable signal from controller instead of active-high disable; same half-bridge use case. | Select Si82E89AD-IS1 if controller provides ENABLE logic; Si82E89AGC-IS1 preferred for fault-initiated shutdown. |
| UCC5390SCD | Texas Instruments part with 10 A peak drive, 3.3/5 V logic compatibility, and integrated Miller clamp; no programmable dead time. | Lacks resistor-programmable dead time and overlap protection; requires external logic for shoot-through prevention. | Choose UCC5390SCD only when higher peak current is mandatory and dead time is managed externally. |
Compared with Si82E89AD-IS1, SI82E89AGC-IS1 offers faster fault response via DIS assertion; compared with UCC5390SCD, it delivers built-in dead time control and tighter skew for SiC/GaN half-bridges without added logic.
Availability
SI82E89AGC-IS1 is available at Aetrix Electronics and suitable for motor drives, onboard chargers, power inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and reinforced isolation compliance.
Supply support for SI82E89AGC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was designed specifically for high-reliability isolated gate driving in SiC/GaN-based power converters, emphasizing low skew, high CMTI, and automotive qualification from the outset.
FAQ
What is the isolation rating and safety certification status of the SI82E89AGC-IS1?
The SI82E89AGC-IS1 provides 6 kVRMS isolation for one minute and is certified to UL 1577, VDE 60747-17 (reinforced insulation), CSA 62368-1, and CQC GB4943.1. These approvals confirm its suitability for reinforced insulation in mains-connected equipment such as EV chargers and industrial inverters where creepage and clearance must meet stringent regulatory limits.
How does the dead time function work on the SI82E89AGC-IS1, and can it be disabled?
The SI82E89AGC-IS1 uses an external resistor (10–110 kΩ) between DT and GNDI to set dead time per Equation 1 (tDT = 1.73×RDT + 5.74 ns). Connecting DT to VDDI disables both dead time insertion and overlap protection, allowing the device to operate as two independent gate drivers - useful for non-half-bridge topologies like dual active bridge or phase-shifted full-bridge.
What UVLO thresholds are implemented in the SI82E89AGC-IS1, and how do they behave independently?
The SI82E89AGC-IS1 has three independent UVLO monitors: VDDI enters lockout at ≤4 V and exits at >4 V; VDDA and VDDB each enter lockout at ≤8 V and exit at >8 V. If VDDI is in UVLO, both outputs are forced low regardless of gate supply status; if only VDDA is in UVLO, VOA remains low while VOB continues normal operation if VDDB is valid - enabling graceful degradation in multi-rail systems.
Does the SI82E89AGC-IS1 support bootstrap power for the high-side gate driver?
Yes, the SI82E89AGC-IS1 supports bootstrap powering of VDDA via an external diode and capacitor network. The datasheet recommends a bootstrap diode (e.g., Schottky) and 1–10 µF capacitor charged through a current-limiting resistor. This configuration is validated for 650 V SiC half-bridges and maintains stable VDDA during high-duty-cycle operation, as confirmed in Figure 20 of the official datasheet.
What is the meaning of the "GC" and "IS1" suffixes in SI82E89AGC-IS1?
The "GC" suffix denotes narrow-body 16-pin SOIC packaging with creepage-optimized layout for reinforced insulation; "IS1" indicates automotive-grade qualification per AEC-Q100 Grade 1, including extended temperature range (–40 to +125 °C), enhanced reliability testing, and manufacturing process controls specific to automotive applications - distinct from industrial-grade "IS" variants.
SI82E89AGC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E89AGC-IS1 FAQ
1.How can I place an order for SI82E89AGC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E89AGC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E89AGC-IS1 reliable?
The price and inventory of SI82E89AGC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E89AGC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82E89AGC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E89AGC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E89AGC-IS1?
SI82E89AGC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E89AGC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E89AGC-IS1?
For technical support, including SI82E89AGC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E89AGC-IS1 requirements.
6.How does Aetrix verify that SI82E89AGC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82E89AGC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E89AGC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82E89AGC-IS1?
All SI82E89AGC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E89AGC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E89AGC-IS1 part is unused and in its original packaging.
Return procedure for SI82E89AGC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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