Skyworks Solutions Inc. SI82E99AEE-IS3R

Overview

SI82E99AEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in onboard chargers and motor drives.

For engineers reviewing the SI82E99AEE-IS3R datasheet, SI82E99AEE-IS3R pinout, SI82E99AEE-IS3R application, or SI82E99AEE-IS3R equivalent, this page delivers verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed PWM-input + EN-control architecture, safety-certified isolation specs, and two rigorously cross-checked alternative parts for half-bridge gate driving.

Technical Context

The SI82E99AEE-IS3R implements a high-side/low-side dual-output topology using capacitive silicon-dioxide (SiO₂) isolation with RF OOK modulation, delivering 200 kV/µs CMTI and deterministic timing behavior across –40 to 125 °C. Its PWM input accepts standard logic-level signals while EN enables synchronous shutdown of both outputs.

Dead time is programmable via external resistor on DT pin (10–110 kΩ), enabling precise shoot-through prevention in half-bridge configurations. UVLO thresholds are fixed at 4 V (VDDI), 8 V (VDDA), and 8 V (VDDB), with independent monitoring per power domain and active pull-down clamps during unpowered states.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC (SOIC-16 NB) package with creepage ≥8.3 mm and clearance ≥8.0 mm; RoHS-compliant, halogen-free, Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.

Compared with SI82E99AEE-IS3R, SI8239AD-D-ISR offers lower cost but reduced drive and noise immunity, while 1EDF5673KXUMA1 provides integrated Miller clamping but sacrifices dead time flexibility and requires PCB rework - SI82E99AEE-IS3R uniquely balances programmability, robustness, and automotive qualification in SOIC-16.

Availability

SI82E99AEE-IS3R is available at Aetrix Electronics and suitable for onboard EV chargers, industrial motor drives, renewable energy inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant performance.

Supply support for SI82E99AEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and communications markets.

The Si82Ex family was developed specifically for high-reliability isolated gate driving in next-generation power converters using wide-bandgap semiconductors, emphasizing safety certification, timing precision, and thermal resilience.

FAQ

What is the function of the DT pin on the SI82E99AEE-IS3R?

The DT pin on the SI82E99AEE-IS3R programs dead time between VOA and VOB transitions using an external resistor to GND (10–110 kΩ), yielding 17–200 ns delay. Connecting DT to VDDI disables dead time and overlap protection, allowing universal dual-driver operation. This pin directly controls shoot-through prevention in half-bridge circuits without external logic.

Does the SI82E99AEE-IS3R support both SiC and GaN FETs?

Yes, the SI82E99AEE-IS3R supports SiC and GaN FETs through its ±6 A peak output drive, 5–30 V gate supply range, and voltage-mode architecture that enables precise gate resistor tuning for optimal dV/dt control and overshoot suppression. Its 200 kV/µs CMTI and <5 ns skew are specifically validated for wide-bandgap switching speeds.

How does the EN pin behave during VDDI undervoltage conditions?

When VDDI falls below its 3.5 V UVLO threshold, the SI82E99AEE-IS3R ignores the EN pin state and forces both VOA and VOB low regardless of EN logic level. Normal EN functionality resumes only after VDDI rises above 4 V and remains stable for tUVLO (typically <1 µs), ensuring fail-safe behavior during power-up/down sequences.

What safety certifications apply to the SI82E99AEE-IS3R?

The SI82E99AEE-IS3R carries UL 1577 recognition (6 kVRMS, 1 min), CSA 62368-1 and 60601-1 (2 MOPP), VDE 60747-17, and CQC GB4943.1 - all for reinforced insulation. These certifications validate its use in medical, industrial, and automotive systems requiring dual protection against electric shock and fire hazards.

Can the SI82E99AEE-IS3R operate with a 3.3 V logic input?

Yes, the SI82E99AEE-IS3R accepts 3.3 V logic inputs on its PWM and EN pins because its CMOS-compatible inputs have VIH(min) = 0.7 × VDDI and VIL(max) = 0.3 × VDDI. With VDDI ≥ 4.7 V (minimum for reliable 3.3 V high-level recognition), the device reliably interprets standard 3.3 V microcontroller outputs without level shifting.