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Skyworks Solutions Inc. SI82E99BBE-IS3R
- Part No.:
- SI82E99BBE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E99BBE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:4,603
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Product details
Overview
SI82E99BBE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in high-efficiency power converters.
For engineers reviewing the SI82E99BBE-IS3R datasheet, SI82E99BBE-IS3R pinout, SI82E99BBE-IS3R application, or SI82E99BBE-IS3R equivalent, key selection criteria include dead-time programmability via external resistor, CMOS-compatible PWM input, UVLO thresholds at 4/8/12/15 V, CMTI >200 kV/μs, and AEC-Q100 qualification for automotive-grade reliability.
Technical Context
The SI82E99BBE-IS3R implements a high-side/low-side gate driver architecture using silicon-dioxide capacitive isolation with RF OOK modulation, enabling precise timing control and fault-tolerant signal transmission. Its dual-output stage delivers voltage-mode drive with independent VDDA/VDDB supplies and integrated shutdown clamp for unpowered-state safety.
It features a dedicated PWM input (not separate VIA/VIB), active-high EN control, and DT pin for resistor-programmable dead time-enabling shoot-through prevention in half-bridge topologies. Thermal shutdown (TSD+ = 150 °C) and short-circuit clamping to VDDA/B further ensure robust operation under fault conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577, VDE 60747-17, CSA 62368-1) |
| Channel-to-Channel Skew | <5 ns - ensures synchronized switching of high-side and low-side FETs |
| Peak Output Current | ±6 A - supports fast turn-on/turn-off of high-capacitance SiC/GaN FETs |
| CMTI | >200 kV/μs - prevents false triggering in noisy high-dV/dt environments |
| UVLO Thresholds | 4 V, 8 V, 12 V, 15 V - configurable per device variant to match gate driver supply rails |
| Operating Temperature | –40 to +125 °C - qualified for automotive and industrial ambient conditions |
| Propagation Delay | Typ. 35 ns - enables high-frequency switching up to 2 MHz with tight timing margins |
| Dead Time Range | Programmable 0–500 ns via 10–110 kΩ resistor on DT pin - prevents shoot-through in half-bridge |
Pinout & Package
Narrow-body 16-pin SOIC package (IS3R suffix), with creepage/clearance optimized for reinforced insulation. Pinout matches Figure 4 (Si82E99x) in datasheet: PWM, EN, DT, VDDI, GNDI, VDDA, VOA, GNDA, VDDB, VOB, GNDB, and 3 NC pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PWM | Single logic input for both channels | Drives VOA high / VOB low when high; VOA low / VOB high when low - simplifies controller interface |
| EN | Active-high enable control | Unconditionally forces VOA/VOB low when deasserted - enables fast system-level fault shutdown |
| DT | Dead time programming terminal | Resistor-to-GND sets delay between VOA/VOB transitions; connect to VDDI to disable dead time |
| VDDI | Logic input supply | 3–20 V range powers internal isolator and logic - decoupled from gate drive supplies |
| GNDI | Logic ground reference | Galvanically isolated from GNDA/GNDB - defines primary-side return path only |
| VDDA / VDDB | Independent gate driver supplies | 5–30 V each - allows asymmetric rail design (e.g., bootstrap high-side, fixed low-side) |
| VOA / VOB | Gate drive outputs | Voltage-mode sourcing/sinking - current controlled externally via gate resistors |
| GNDA / GNDB | Gate driver ground returns | Isolated secondary-side references - required for floating high-side operation |
Key Features
| Feature | Design Value |
|---|---|
| Voltage Mode Drive | Enables precise gate current control via external resistors - optimizes switching speed, EMI, and overshoot |
| Programmable Dead Time | Adjustable 0–500 ns via single resistor - eliminates need for external timing ICs in half-bridge designs |
| Integrated Shutdown Clamp | Active pull-down to GNDA/GNDB when VDDA/VDDB unpowered - prevents parasitic FET turn-on during startup/shutdown |
| AEC-Q100 Qualified | Grade 1 (–40 to +125 °C) - validated for automotive traction inverters, onboard chargers, and DC-DC converters |
| 1500 VRMS Working Voltage | Sustained isolation rating - meets IEC 62368-1 and IEC 60601-1 2-MOPP requirements for medical and industrial systems |
| 4 kV HBM ESD Rating | Robust handling during PCB assembly and field service - reduces risk of latent damage in manufacturing |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase inverter driving permanent magnet synchronous motors in EV traction systems. IC Role / Device Role / Timing Role: High-side/low-side gate driver for half-bridge legs, enforcing dead time to prevent shoot-through during PWM commutation. Use Value: 6 A drive strength and <5 ns skew enable precise timing control of SiC FETs at 100+ kHz, improving torque ripple and efficiency. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in electric vehicle onboard chargers. IC Role / Device Role / Timing Role: Isolated gate driver for interleaved LLC and phase-shifted full-bridge topologies requiring reinforced insulation and high CMTI. Use Value: 6 kVRMS isolation and 200 kV/μs CMTI withstand fast transients from grid harmonics and regenerative braking noise. |
| Isolated Switched-Mode Supplies | Power Inverters |
|
Use Scenario: High-density 1–3 kW telecom and server PSUs using active clamp forward or flyback converters. IC Role / Device Role / Timing Role: Dual-channel driver controlling synchronous rectifiers and primary-side switches across isolated boundaries. Use Value: Independent VDDA/VDDB supplies allow optimal gate biasing for GaN HEMTs and Si MOSFETs in same design, reducing BOM count. |
Use Scenario: Solar string inverters and UPS systems requiring galvanic isolation between DC input and AC output stages. IC Role / Device Role / Timing Role: Gate driver for three-level NPC or T-type inverter bridges, where channel matching minimizes neutral-point voltage drift. Use Value: Tight part-to-part skew and temperature stability ensure consistent dead time across parallel modules without calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3R | Universal configuration (dual VIA/VIB inputs), no PWM mode; identical isolation, skew, and drive strength | Better suited for dual independent switch control (e.g., two separate buck converters), not half-bridge | Select when independent channel control is required instead of complementary PWM-driven operation |
| UCC5390SCD | Texas Instruments part with 4 A drive, 100 kV/μs CMTI, and integrated Miller clamp; different pinout and UVLO setpoints | Lacks AEC-Q100 qualification and 6 kVRMS certification; requires external dead time circuitry | Choose for cost-sensitive industrial supplies where automotive compliance and highest CMTI are not mandatory |
Compared with SI82E99BBE-IS3R, Si8239BD-IS3R offers flexible input routing but lacks native PWM simplicity, while UCC5390SCD trades isolation robustness and automotive qualification for lower cost and integrated protection features.
Availability
SI82E99BBE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, and isolated switched-mode supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E99BBE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power systems, delivering superior timing accuracy, lifetime stability, and reinforced isolation for automotive, industrial, and energy infrastructure applications.
FAQ
What is the function of the DT pin on the SI82E99BBE-IS3R?
The DT pin on the SI82E99BBE-IS3R is used to program dead time between VOA and VOB transitions via an external resistor to GNDI. With RDT = 10–110 kΩ, it provides 0–500 ns adjustable delay to prevent shoot-through in half-bridge circuits. Connecting DT to VDDI disables dead time insertion, allowing SI82E99BBE-IS3R to operate as a dual independent driver.
Does the SI82E99BBE-IS3R support bootstrap high-side gate drive?
Yes, the SI82E99BBE-IS3R supports bootstrap high-side gate drive. Its VDDA supply can be powered through a bootstrap diode and capacitor network referenced to GNDA, enabling cost-effective high-side operation without a separate isolated supply. The shutdown clamp ensures safe behavior during bootstrap capacitor discharge cycles.
What safety certifications does the SI82E99BBE-IS3R hold?
The SI82E99BBE-IS3R holds UL 1577 (6000 VRMS, 1 min), VDE 60747-17 (reinforced insulation), CSA 62368-1 and 60601-1 (2 MOPP), and CQC GB4943.1 approvals. These certifications validate its suitability for medical, industrial, and automotive systems requiring reinforced isolation and double protection.
How does the EN pin behave during undervoltage lockout on the SI82E99BBE-IS3R?
When VDDI falls below its UVLO threshold (e.g., 4 V), the SI82E99BBE-IS3R ignores the EN pin state and forces VOA/VOB low regardless of EN logic level. EN only becomes functional once VDDI exceeds the UVLO release threshold (e.g., 4.5 V), ensuring predictable behavior during power-up and brownout conditions.
Can the SI82E99BBE-IS3R drive both SiC and GaN FETs effectively?
Yes, the SI82E99BBE-IS3R is specifically designed for wide-bandgap FETs. Its ±6 A peak output current, <5 ns skew, and voltage-mode drive architecture enable fast, controlled switching of SiC MOSFETs and GaN HEMTs. External gate resistors allow tuning of dV/dt to balance switching loss, EMI, and device stress.
SI82E99BBE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E99BBE-IS3R FAQ
1.How can I place an order for SI82E99BBE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E99BBE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E99BBE-IS3R reliable?
The price and inventory of SI82E99BBE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E99BBE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E99BBE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E99BBE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E99BBE-IS3R?
SI82E99BBE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E99BBE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E99BBE-IS3R?
For technical support, including SI82E99BBE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E99BBE-IS3R requirements.
6.How does Aetrix verify that SI82E99BBE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E99BBE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E99BBE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E99BBE-IS3R?
All SI82E99BBE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E99BBE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E99BBE-IS3R part is unused and in its original packaging.
Return procedure for SI82E99BBE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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