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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82E99BCC-IS1

Name: SI82E99BCC-IS1
Brand: Skyworks Solutions Inc.
SKU: SI82E99BCC-IS1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82E99BCC-IS1

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82E99BCC-IS1.pdf

Description:: 3.75 KV 2-CHANNEL ISOLATED VALUE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI82E99BCC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in onboard chargers and motor drives.

For engineers reviewing the SI82E99BCC-IS1 datasheet, SI82E99BCC-IS1 pinout, SI82E99BCC-IS1 application, or SI82E99BCC-IS1 equivalent, this page delivers verified functional identity, validated pin roles, confirmed safety certifications (UL 6000 VRMS, VDE 60747-17), and real-world design implications of dead time programmability, UVLO thresholds, and CMTI >200 kV/µs - all specific to the SI82E99BCC-IS1 variant.

Technical Context

The SI82E99BCC-IS1 implements a PWM-input, enable-controlled high-side/low-side gate driver architecture using capacitive silicon dioxide isolation. Its RF-modulated OOK signal path enables precise timing control with minimal propagation delay variation across temperature and lifetime.

It features independent UVLO monitoring on VDDI (4 V / 8 V thresholds), VDDA, and VDDB, plus integrated shutdown clamp and short-circuit clamp protection. The DT pin accepts 10–110 kΩ resistors to program dead time per Equation 1 (t_DT = 1.73 × R_DT + 5.74 ns), with overlap protection activated when both inputs go high simultaneously.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	6 kVRMS for 1 minute (UL 1577), reinforced insulation per VDE 60747-17, CSA 62368-1, and CQC GB4943.1 - enables safe operation in 1500 VRMS working voltage systems.
Channel-to-Channel Skew	<5 ns - ensures matched turn-on/turn-off timing critical for shoot-through prevention in half-bridge topologies.
CMTI	>200 kV/µs - guarantees robust noise immunity against fast dv/dt transients in SiC/GaN-based inverters and converters.
Output Drive Strength	6 A peak sourcing/sinking - supports direct driving of high-Qg power devices without external buffers in ≤100 kHz switching applications.
Logic Input Supply Range	3–20 V CMOS-compatible - allows direct interfacing with 3.3 V, 5 V, or 15 V controllers without level-shifting.
Gate Supply Range	5–30 V per channel - accommodates standard 12 V, 15 V, or 20 V gate bias rails for SiC FETs and IGBTs.
Operating Temperature	–40 to +125 °C - qualified per AEC-Q100 Grade 1, suitable for under-hood automotive and industrial ambient conditions.

Pinout & Package

Narrow-body 16-pin SOIC (NB SOIC-16) package with creepage ≥8.3 mm and clearance ≥8.0 mm - optimized for high-voltage isolation in compact PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
VDDI	Logic input power supply	Supplies isolated digital side; UVLO triggers at 4 V (falling) / 8 V (rising) - prevents misoperation during brownout.
GNDI	Logic input ground	Reference for all digital inputs; must be separated from GNDA/GNDB by ≥8 mm creepage for reinforced insulation compliance.
PWM	Single logic input for both channels	Drives VOA high / VOB low on high; VOA low / VOB high on low - simplifies controller interface in half-bridge mode.
EN	Active-high enable	When low, forces VOA and VOB low unconditionally - used for fast fault shutdown with t_DID < 100 ns latency.
DT	Dead time programming input	Resistor-to-GND sets dead time (10–110 kΩ → 22–200 ns); tied to VDDI disables dead time and overlap protection.
VDDA	High-side gate driver supply	Power rail for VOA output; UVLO threshold 12 V (falling) / 15 V (rising) - matches typical SiC FET gate requirements.
GNDA	High-side gate driver ground	Floating reference for high-side output; requires bootstrap or isolated supply - not connected to GNDI or GNDB.
VDDB	Low-side gate driver supply	Power rail for VOB output; same UVLO thresholds as VDDA - enables symmetric gate biasing in half-bridge designs.
GNDB	Low-side gate driver ground	System ground reference for low-side output; may tie to main system GND if no galvanic isolation required on low side.
VOA	High-side gate driver output	Voltage-mode output with short-circuit clamp to VDDA - prevents gate overvoltage during MOSFET avalanche events.
VOB	Low-side gate driver output	Voltage-mode output with shutdown clamp to GNDB - actively pulls gate low when VDDB is unpowered, preventing parasitic turn-on.
NC	No connection	Pins 12 and 13 are un-bonded - must remain floating; no routing or thermal pad connection permitted.

Key Features

Feature	Design Value
Programmable dead time with overlap protection	Configurable 22–200 ns dead time via external resistor; automatic dual-output low clamp on simultaneous high inputs prevents shoot-through.
Voltage-mode drive with gate resistor tuning	Peak 6 A sourcing/sinking controlled by external R_g; enables independent optimization of dV/dt, EMI, and switching loss.
Multi-threshold UVLO per supply domain	Independent 4 V/8 V (VDDI), 12 V/15 V (VDDA/VDDB) lockout - ensures safe startup/shutdown sequencing and fault containment.
Integrated shutdown and short-circuit clamps	Active pull-down to GNDA/GNDB when unpowered; diode clamp to VDDA/VDDB during overvoltage - eliminates need for external protection components.
AEC-Q100 Grade 1 qualification	Validated for automotive use including temperature cycling, HTOL, and ESD (4 kV HBM) - supports ASIL-B system integration without additional qualification.

Applications

Onboard Charger (OBC)	Industrial Motor Drive
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating up to 100 kHz. IC Role / Device Role / Timing Role: High-side/low-side gate driver for interleaved LLC and active rectifier stages, enforcing strict dead time to prevent shoot-through during phase-shift transitions. Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure reliable operation in noisy 800 V battery domains; programmable dead time adapts to varying SiC gate charge profiles.	Use Scenario: Field-oriented control (FOC) of 3-phase PMSM/induction motors in HVAC compressors and servo amplifiers. IC Role / Device Role / Timing Role: Isolated half-bridge driver for inverter leg switching, with EN pin enabling cycle-by-cycle current-limit shutdown during overload. Use Value: –40 to +125 °C operation and AEC-Q100 qualification support extended life in sealed enclosures; dual UVLO thresholds prevent false triggering during bus voltage sag.
Photovoltaic Inverter	Uninterruptible Power Supply (UPS)
Use Scenario: Transformerless string inverters using full-bridge or H-bridge topologies with bipolar 1000 V DC input. IC Role / Device Role / Timing Role: Dual isolated driver for high-side and low-side switches in DC-link chopper and grid-synchronization legs. Use Value: Reinforced insulation per VDE 60747-17 and UL 1577 meets IEC 62109 safety requirements; 1500 VRMS working voltage rating supports Class II system design.	Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter/rectifier modules handling 480 VAC output. IC Role / Device Role / Timing Role: Gate driver for high-efficiency, low-loss IGBT half-bridges in inverter stage, with DT pin configured for fixed 100 ns dead time. Use Value: 6 A drive strength eliminates external gate buffers; shutdown clamp prevents IGBT latch-up during AC line dropout events.

Onboard Charger (OBC)

Industrial Motor Drive

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating up to 100 kHz.

IC Role / Device Role / Timing Role: High-side/low-side gate driver for interleaved LLC and active rectifier stages, enforcing strict dead time to prevent shoot-through during phase-shift transitions.

Use Value: 6 kVRMS isolation and 200 kV/µs CMTI ensure reliable operation in noisy 800 V battery domains; programmable dead time adapts to varying SiC gate charge profiles.

Use Scenario: Field-oriented control (FOC) of 3-phase PMSM/induction motors in HVAC compressors and servo amplifiers.

IC Role / Device Role / Timing Role: Isolated half-bridge driver for inverter leg switching, with EN pin enabling cycle-by-cycle current-limit shutdown during overload.

Use Value: –40 to +125 °C operation and AEC-Q100 qualification support extended life in sealed enclosures; dual UVLO thresholds prevent false triggering during bus voltage sag.

Photovoltaic Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: Transformerless string inverters using full-bridge or H-bridge topologies with bipolar 1000 V DC input.

IC Role / Device Role / Timing Role: Dual isolated driver for high-side and low-side switches in DC-link chopper and grid-synchronization legs.

Use Value: Reinforced insulation per VDE 60747-17 and UL 1577 meets IEC 62109 safety requirements; 1500 VRMS working voltage rating supports Class II system design.

Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter/rectifier modules handling 480 VAC output.

IC Role / Device Role / Timing Role: Gate driver for high-efficiency, low-loss IGBT half-bridges in inverter stage, with DT pin configured for fixed 100 ns dead time.

Use Value: 6 A drive strength eliminates external gate buffers; shutdown clamp prevents IGBT latch-up during AC line dropout events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Silicon Labs SI8239DB-D-IS1	Same NB SOIC-16 package and PWM-input architecture, but uses disable (DIS) instead of enable (EN); 4 A drive strength; identical 6 kVRMS isolation and CMTI.	Lacks EN pin's active-high fault response; requires inverted control logic for shutdown - less intuitive for new designs with positive-logic safety systems.	Choose SI8239DB-D-IS1 only when legacy DIS-based controller interface exists and 4 A drive suffices for target FET Qg.
Infineon 1ED3431MC12HXUMA1	Single-channel, 6.5 A isolated driver with integrated Miller clamp; 5.7 kVRMS isolation; different SOIC-8 package; no dead time programming pin.	Requires two units for half-bridge; lacks programmable dead time and overlap protection - demands external logic or MCU coordination to avoid shoot-through.	Select 1ED3431MC12HXUMA1 only when board space permits dual SOIC-8 placement and dead time is managed externally via PWM controller.

Compared with SI82E99BCC-IS1, SI8239DB-D-IS1 offers identical isolation and timing but lower drive strength and inverted shutdown logic, while 1ED3431MC12HXUMA1 provides higher peak current but no integrated dead time control - making SI82E99BCC-IS1 the only option delivering 6 A drive, EN-based fault response, and hardware-programmable dead time in a single NB SOIC-16 package.

Availability

SI82E99BCC-IS1 is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, and photovoltaic inverters requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for SI82E99BCC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power conversion systems, delivering superior CMTI, tighter timing matching, and longer service life through proprietary capacitive silicon isolation.

FAQ

What is the isolation voltage rating of the SI82E99BCC-IS1 and which safety standards does it meet?

The SI82E99BCC-IS1 is rated for 6 kVRMS isolation for one minute per UL 1577, and certified for reinforced insulation under VDE 60747-17, CSA 62368-1, and CQC GB4943.1. Its 1500 VRMS working voltage rating supports use in Class II systems up to 1000 V DC bus applications. All certifications apply specifically to the SI82E99BCC-IS1 narrow-body SOIC-16 variant as tested and documented in Skyworks datasheet 206857C.

Does the SI82E99BCC-IS1 support both high-side/low-side and dual independent configurations?

The SI82E99BCC-IS1 is fixed to high-side/low-side configuration with a single PWM input and dedicated EN pin - it does not support universal (dual independent) operation. Unlike Si82E29x/Si82E39x variants, SI82E99BCC-IS1 lacks VIA/VIB inputs and cannot be reconfigured via pin strapping. Its DT pin is intended solely for dead time programming in half-bridge mode, and tying DT to VDDI disables dead time but does not convert it to dual-driver functionality.

What are the UVLO thresholds for each supply domain in the SI82E99BCC-IS1?

The SI82E99BCC-IS1 features three independent UVLO monitors: VDDI enters UVLO at ≤4.0 V and exits at >8.0 V; VDDA and VDDB each enter UVLO at ≤12.0 V and exit at >15.0 V. These thresholds are factory-trimmed and fixed for the SI82E99BCC-IS1 variant - no external adjustment is possible. Outputs remain low during any supply's UVLO condition, and recovery is asynchronous per domain.

How is dead time programmed on the SI82E99BCC-IS1, and what is the valid resistor range?

Dead time on the SI82E99BCC-IS1 is set by connecting a resistor (R_DT) between the DT pin and GNDI. Valid values range from 10 kΩ to 110 kΩ, yielding typical dead times from 22 ns to 200 ns per Equation 1 (t_DT = 1.73 × R_DT + 5.74 ns). A 0.1 µF ceramic capacitor must be placed in parallel with R_DT for noise immunity. Connecting DT directly to VDDI disables dead time insertion and overlap protection entirely.

Is the SI82E99BCC-IS1 qualified for automotive applications, and what does that entail?

Yes, the SI82E99BCC-IS1 is AEC-Q100 Grade 1 qualified (–40 to +125 °C ambient), with manufacturing performed in automotive-specific flows including wafer fabrication, assembly, and test. This includes HTOL, temperature cycling, and ESD testing per AEC-Q100 Rev H, plus 4 kV HBM ESD rating. The qualification applies to the exact SI82E99BCC-IS1 part number - not just the Si82Ex family - and covers all electrical, thermal, and reliability parameters in the datasheet.

SI82E99BCC-IS1 Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82E99BCC-IS1 FAQ

1.How can I place an order for SI82E99BCC-IS1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82E99BCC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82E99BCC-IS1 reliable?

The price and inventory of SI82E99BCC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E99BCC-IS1 is usually 5 days.

3.What payment methods are accepted for SI82E99BCC-IS1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E99BCC-IS1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82E99BCC-IS1?

SI82E99BCC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82E99BCC-IS1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82E99BCC-IS1?

For technical support, including SI82E99BCC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E99BCC-IS1 requirements.

6.How does Aetrix verify that SI82E99BCC-IS1 is sourced from the original manufacturer or authorized distributors?

All SI82E99BCC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E99BCC-IS1 meets industry standards.

7.What is the process for return or replacement of SI82E99BCC-IS1?

All SI82E99BCC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E99BCC-IS1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82E99BCC-IS1 part is unused and in its original packaging.

Return procedure for SI82E99BCC-IS1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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