Skyworks Solutions Inc. SI82E99BCE-IS3
- Part No.:
- SI82E99BCE-IS3
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E99BCE-IS3.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:

- Shipping:

Inventory:3,482
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI82E99BCE-IS3 from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive capability, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and up to 30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in onboard chargers and motor drives.
For engineers reviewing the SI82E99BCE-IS3 datasheet, SI82E99BCE-IS3 pinout, SI82E99BCE-IS3 application, or SI82E99BCE-IS3 equivalent, key selection considerations include its programmable dead time (via DT pin), CMOS-compatible PWM input architecture, automotive-grade AEC-Q100 qualification, and 200 kV/µs CMTI for noisy power stage environments.
Technical Context
The SI82E99BCE-IS3 implements a high-side/low-side gate driver topology using differential capacitive isolation with RF OOK modulation across dual SiO₂ barriers, enabling precise timing control and fault tolerance. Its PWM input architecture synchronizes both outputs with inherent overlap protection triggered by simultaneous high inputs.
Dead time is user-programmed via an external resistor on the DT pin (10–110 kΩ), generating 1.73×RDT + 5.74 ns typical delay, and can be disabled by connecting DT to VDDI. UVLO thresholds are fixed at 4 V (VDDI), 8 V (VDDA), and 8 V (VDDB), with independent monitoring per supply rail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements. |
| Channel-to-Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side gate drive signals in half-bridge topologies. |
| CMTI | >200 kV/µs - suppresses false triggering during fast dV/dt transients in SiC/GaN-based inverters. |
| Output Drive Strength | 6 A peak sourcing/sinking - supports fast switching of high-capacitance wide-bandgap FETs without external buffers. |
| Logic Input Supply Range | 3–20 V - compatible with 3.3 V, 5 V, and 15 V controller interfaces without level-shifting. |
| Gate Supply Range | 5–30 V - enables flexible biasing for unipolar or bipolar gate drive configurations (e.g., +15 V/–5 V). |
| Operating Temperature | –40 to +125 °C - qualified per AEC-Q100 Grade 1 for under-hood automotive applications. |
| ESD Rating | 4 kV HBM - provides robust handling during PCB assembly and system integration. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage ≥8.3 mm and clearance ≥8.3 mm; RoHS-compliant, halogen-free, and automotive-qualified.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Logic input power supply | Supplies 3–20 V to internal digital circuitry; triggers UVLO if ≤4 V. |
| GNDI | Logic input ground reference | Isolated return path for digital side; must be separated from GNDA/GNDB by ≥8.3 mm creepage. |
| PWM | Single-input control signal | Drives VOA high / VOB low when high; VOA low / VOB high when low - enables half-bridge complementary operation. |
| EN | Active-high enable input | When low, forces VOA and VOB low unconditionally; resumes normal operation within tEID after rising edge. |
| DT | Dead time programming terminal | Resistor-to-GND sets dead time (1.73×RDT + 5.74 ns); tied to VDDI disables dead time and overlap protection. |
| VDDA | High-side gate driver supply | 5–30 V supply for VOA output; UVLO activates at ≤8 V to prevent weak turn-on of high-side FET. |
| GNDA | High-side gate driver ground | Return path for high-side output; electrically isolated from GNDI and GNDB. |
| VDDB | Low-side gate driver supply | 5–30 V supply for VOB output; independent UVLO at ≤8 V ensures safe low-side operation. |
| GNDB | Low-side gate driver ground | Return path for low-side output; isolated from GNDI and GNDA. |
| VOA | High-side gate driver output | 6 A capable voltage-source output; includes short-circuit clamp to VDDA and shutdown clamp to GNDA. |
| VOB | Low-side gate driver output | 6 A capable voltage-source output; features identical clamping and thermal protection as VOA. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Dead Time | Configurable 0–120 ns via external resistor on DT pin; prevents shoot-through in half-bridge circuits. |
| Overlap Protection | Hardware-enforced immediate low-state on both VOA/VOB when PWM goes high while either output is already high. |
| Voltage Mode Drive | Output behaves as controlled voltage source; gate resistor selection directly tunes rise/fall times and EMI. |
| Independent UVLO Monitoring | Dedicated 4 V (VDDI), 8 V (VDDA), and 8 V (VDDB) thresholds ensure safe operation even if one supply fails. |
| Thermal Shutdown | Auto-recovering shutdown at TSD+ = 150 °C; weak pull-down until temperature falls below TSD− = 135 °C. |
| Shutdown Clamp | Active pull-down to GNDA/GNDB when VDDA/VDDB is unpowered - prevents parasitic FET turn-on during startup/shutdown. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating at 100+ kHz. IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling interleaved totem-pole PFC and isolated DC-DC stages. Use Value: 6 kVRMS isolation and 200 kV/µs CMTI maintain signal integrity across 1 kV bus rails; <5 ns skew enables precise ZVS control. |
Use Scenario: Field-oriented control (FOC) of 3-phase permanent magnet motors in HVAC compressors and traction inverters. IC Role / Device Role / Timing Role: Half-bridge driver for each phase leg, synchronized via PWM input with programmable dead time. Use Value: AEC-Q100 qualification and –40 to +125 °C operation support under-hood deployment; 6 A drive reduces external buffer needs. |
| Uninterruptible Power Supply (UPS) | Renewable Energy Inverter |
Use Scenario: Online double-conversion UPS with IGBT-based inverter stage delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Isolated gate driver for high-voltage IGBT half-bridges in output inverter stage. Use Value: 30 V gate supply supports ±15 V gate bias for IGBTs; reinforced insulation meets UL 62368-1 safety requirements. |
Use Scenario: Grid-tied solar string inverters using SiC FETs in three-level NPC or T-type topologies. IC Role / Device Role / Timing Role: Dual-channel driver for high-side and low-side switches in each half-bridge leg. Use Value: Low propagation delay variation over temperature ensures stable dead time across –40 to +125 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3 | Same SOIC-16 NB package and PWM input architecture, but lacks AEC-Q100 qualification and has fixed 8 V UVLO on VDDA/VDDB (vs. SI82E99BCE-IS3's 8 V UVLO). | Targeted at industrial UPS and server PSUs where automotive qualification is unnecessary. | Select when AEC-Q100 is not required and cost sensitivity outweighs extended temperature margin. |
| UCC5390SCD | TI part with 10 A peak drive, single 5–25 V gate supply, and integrated Miller clamp; no programmable DT pin or dual UVLO thresholds. | Optimized for high-current GaN half-bridges requiring active Miller clamping, not universal high-side/low-side flexibility. | Choose when higher peak current and Miller clamping are critical, and dead time tuning is handled externally. |
Compared with Si8239BD-IS3, SI82E99BCE-IS3 adds automotive qualification and tighter UVLO tolerances; versus UCC5390SCD, it trades peak current for design flexibility in dead time control, dual-rail gate supplies, and independent UVLO monitoring - making it preferable for thermally constrained, safety-critical half-bridge systems.
Availability
SI82E99BCE-IS3 is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82E99BCE-IS3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power conversion systems, delivering superior CMTI, lifetime stability, and integration for SiC/GaN-based motor drives and EV infrastructure.
FAQ
What is the function of the DT pin on the SI82E99BCE-IS3?
The DT pin on the SI82E99BCE-IS3 programs dead time between VOA and VOB transitions using an external resistor to GND (10–110 kΩ), yielding 1.73×RDT + 5.74 ns typical delay. Connecting DT to VDDI disables dead time and overlap protection, allowing the SI82E99BCE-IS3 to operate as a dual independent driver. This pin is essential for preventing shoot-through in half-bridge configurations.
Does the SI82E99BCE-IS3 support bipolar gate drive voltages?
Yes, the SI82E99BCE-IS3 supports bipolar gate drive through independent VDDA and VDDB supplies. By applying +15 V to VDDA and –5 V to VDDB (with appropriate level-referenced grounds), the SI82E99BCE-IS3 can generate +15 V/–5 V gate drive for enhanced SiC FET turn-off robustness. The device's voltage-mode architecture and shutdown clamp ensure safe operation during polarity transitions.
How does the SI82E99BCE-IS3 handle undervoltage conditions on its power supplies?
The SI82E99BCE-IS3 implements independent UVLO monitoring: VDDI enters lockout below 4 V, while VDDA and VDDB each trigger at 8 V. When any supply drops below its threshold, the corresponding output (VOA or VOB) is forced low. If VDDI is in UVLO, both VOA and VOB remain low regardless of input state - ensuring fail-safe behavior during brownouts or startup sequences in the SI82E99BCE-IS3.
What isolation certifications apply to the SI82E99BCE-IS3?
The SI82E99BCE-IS3 is certified to UL 1577 (6000 VRMS, 1 min), VDE 60747-17 (reinforced insulation), CSA 62368-1 (reinforced), and CQC GB4943.1. These approvals confirm its suitability for safety-critical applications including automotive onboard chargers and medical power supplies requiring two means of patient protection (2 MOPP) per IEC 60601-1.
Can the SI82E99BCE-IS3 drive both SiC and IGBT power devices?
Yes, the SI82E99BCE-IS3 is explicitly validated for SiC FETs, IGBTs, MOSFETs, and GaN HEMTs. Its 6 A peak sourcing/sinking current, 30 V max gate supply, and voltage-mode drive architecture allow direct interfacing with diverse gate charge requirements. The SI82E99BCE-IS3's 200 kV/µs CMTI and low skew further ensure reliable switching in high-dV/dt SiC inverters and high-current IGBT modules.
SI82E99BCE-IS3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E99BCE-IS3 FAQ
1.How can I place an order for SI82E99BCE-IS3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E99BCE-IS3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E99BCE-IS3 reliable?
The price and inventory of SI82E99BCE-IS3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E99BCE-IS3 is usually 5 days.
3.What payment methods are accepted for SI82E99BCE-IS3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E99BCE-IS3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E99BCE-IS3?
SI82E99BCE-IS3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E99BCE-IS3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E99BCE-IS3?
For technical support, including SI82E99BCE-IS3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E99BCE-IS3 requirements.
6.How does Aetrix verify that SI82E99BCE-IS3 is sourced from the original manufacturer or authorized distributors?
All SI82E99BCE-IS3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E99BCE-IS3 meets industry standards.
7.What is the process for return or replacement of SI82E99BCE-IS3?
All SI82E99BCE-IS3 units undergo pre-shipment inspection (PSI). If there is an issue with SI82E99BCE-IS3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E99BCE-IS3 part is unused and in its original packaging.
Return procedure for SI82E99BCE-IS3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI82E99BCE-IS3 Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
