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Skyworks Solutions Inc. SI82E99BEE-IS3R
- Part No.:
- SI82E99BEE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82E99BEE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED VALUE GA
- Quantity:
- Payment:
- Shipping:
Inventory:4,797
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Product details
Overview
SI82E99BEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 6 A peak output drive strength, <5 ns channel-to-channel skew, and 6 kVRMS reinforced isolation. It operates with 3–20 V logic supply and 5–30 V gate supply, and is designed for half-bridge SiC/GaN/MOSFET/IGBT control in onboard chargers and motor drives.
For engineers reviewing the SI82E99BEE-IS3R datasheet, SI82E99BEE-IS3R pinout, SI82E99BEE-IS3R application, or SI82E99BEE-IS3R equivalent, key selection considerations include its PWM-input architecture, programmable dead time via external resistor, UVLO thresholds (4/8/12/15 V options), CMTI >200 kV/μs, and AEC-Q100 qualification for automotive power systems.
Technical Context
The SI82E99BEE-IS3R implements a PWM-input, high-side/low-side dual gate driver topology using Skyworks' proprietary silicon-dioxide capacitive isolation. Its functional block includes RF-modulated OOK signal transmission across dual isolation barriers, integrated dead time control logic, and independent UVLO monitoring per supply rail (VDDI, VDDA, VDDB).
It features a voltage-mode output stage with active shutdown clamp and short-circuit protection, supports unipolar/bipolar output configurations, and delivers deterministic timing behavior with propagation delay matching <5 ns between channels - critical for shoot-through prevention in hard-switched half-bridges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute (UL 1577, VDE 60747-17, CSA 62368-1) |
| Channel-to-Channel Skew | <5 ns - ensures synchronized switching and prevents timing-induced shoot-through |
| Peak Output Current | 6 A sourcing/sinking - drives high-Qg SiC/GaN FETs without external buffers |
| CMTI | >200 kV/μs - maintains signal integrity in high-dV/dt motor/inverter environments |
| Input Logic Type | PWM-only interface - simplifies controller interface vs. dual-input variants; single signal controls complementary outputs |
| UVLO Thresholds | Factory-set at 4 V, 8 V, 12 V, or 15 V - prevents erratic switching during brown-out conditions |
| Operating Temp | –40 to +125 °C - supports under-hood automotive and industrial ambient requirements |
| Package | Narrow-body SOIC-16 (IS3R) - 8.3 mm × 10.3 mm footprint with 1.27 mm pitch, optimized for thermal dissipation |
Pinout & Package
Narrow-body 16-pin SOIC (IS3R) package with creepage ≥8.3 mm and clearance ≥8.0 mm, rated for 1500 VRMS working voltage and 10 kV bipolar surge immunity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Logic input power supply | 3–20 V CMOS-compatible supply; powers internal digital logic and isolation modulator |
| GNDI | Logic input ground | Reference for all digital inputs; galvanically isolated from gate driver grounds |
| PWM | Single PWM input | Drives complementary VOA/VOB outputs - high = VOA high / VOB low; low = VOA low / VOB high |
| EN | Active-high enable | Asserting EN = high enables normal operation; deasserting forces both outputs low unconditionally |
| DT | Dead time programming | Resistor-to-GND sets dead time (10–110 kΩ → 17.3–190 ns); tied to VDDI disables dead time |
| VDDA | High-side gate driver supply | 5–30 V supply for VOA output stage; supports bootstrap or isolated supply topologies |
| GNDA | High-side gate driver ground | Return path for VOA; electrically isolated from GNDI and GNDB |
| VDDB | Low-side gate driver supply | 5–30 V supply for VOB; may share ground with system power stage |
| GNDB | Low-side gate driver ground | Return path for VOB; isolated from GNDA but may be connected to system ground |
| VOA | High-side gate driver output | Voltage-mode source/sink output driving high-side FET gate; includes short-circuit clamp |
| VOB | Low-side gate driver output | Voltage-mode source/sink output driving low-side FET gate; includes shutdown clamp |
| NC | No connection | Pins 12, 13, and 15 are internally unconnected - must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| PWM-input high-side/low-side topology | Eliminates need for external logic inversion; reduces PCB routing complexity in half-bridge designs |
| Programmable dead time with overlap protection | Prevents shoot-through by forcing both outputs low on simultaneous high inputs - no external logic required |
| Voltage-mode drive with gate resistor tuning | Enables precise control of dV/dt, EMI, and overshoot via Rg selection - no current-source limitations |
| Independent triple-rail UVLO monitoring | Guarantees safe startup/shutdown sequencing: VDDI, VDDA, and VDDB each have dedicated lockout thresholds |
| AEC-Q100 qualified (Grade 1) | Validated for automotive powertrain and charging applications including onboard chargers and traction inverters |
| 10 kV bipolar surge immunity | Withstands repetitive line transients in EV charging and industrial motor drive environments without degradation |
Applications
| Onboard Chargers (OBC) | Motor Drives |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers using interleaved LLC or phase-shifted full-bridge topologies. IC Role / Device Role / Timing Role: SI82E99BEE-IS3R provides isolated, complementary gate drive to high-side/low-side SiC MOSFETs in primary-side half-bridges, enforcing dead time to prevent shoot-through during zero-voltage switching transitions. Use Value: Enables >96% efficiency at 11 kW OBC power levels while maintaining <5 ns timing margin across temperature and lifetime - critical for meeting ISO 17987-2 EMC requirements. | Use Scenario: Field-oriented control (FOC) of permanent magnet synchronous motors (PMSM) in HVAC compressors and industrial servo drives. IC Role / Device Role / Timing Role: SI82E99BEE-IS3R delivers tightly matched, isolated gate signals to IGBTs/SiC FETs in three-phase inverter legs, with CMTI >200 kV/μs rejecting common-mode noise from fast-switching motor phases. Use Value: Eliminates false triggering in noisy motor environments, reducing torque ripple and enabling <1% speed regulation error over 0–10 kHz bandwidth. |
| Power Inverters | Uninterruptible Power Supplies (UPS) |
Use Scenario: High-frequency DC/AC inversion in solar microinverters and energy storage system (ESS) bidirectional converters. IC Role / Device Role / Timing Role: SI82E99BEE-IS3R drives high-side/low-side GaN HEMTs in totem-pole PFC and inverter stages, leveraging its 6 A drive to minimize gate charge time at 100+ kHz switching. Use Value: Reduces total gate drive loss by 40% vs. optocoupled alternatives, directly improving inverter efficiency and thermal margin at 65 °C ambient. | Use Scenario: Online double-conversion UPS systems requiring fast transfer (<10 ms), high reliability, and reinforced isolation for medical/industrial backup power. IC Role / Device Role / Timing Role: SI82E99BEE-IS3R isolates and drives IGBTs in inverter bridge, with UVLO thresholds configured to match battery voltage sag profiles during grid failure. Use Value: Ensures clean, jitter-free switching during brown-out events - preventing inverter collapse and supporting seamless load transfer per IEC 62040-3 Class VFI-SS-111. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3R | Universal configuration (dual independent inputs VIA/VIB), no PWM mode; same 6 A drive, 6 kVRMS isolation, and IS3R package | Suitable for designs requiring independent control of high/low side (e.g., synchronous rectification, asymmetrical topologies) | Select when non-complementary switching or asymmetric dead time is required - not drop-in for SI82E99BEE-IS3R's PWM interface |
| UCC5390SCD | Texas Instruments part with 10 A drive, 5.7 kVRMS isolation, and integrated Miller clamp; uses different pinout and logic polarity | Better suited for ultra-fast SiC switching with higher peak current demands, but requires layout revision and firmware adaptation | Choose for >100 kHz SiC designs needing enhanced Miller clamping - not pin-compatible or functionally identical |
Compared with Si8239BD-IS3R and UCC5390SCD, SI82E99BEE-IS3R offers the only PWM-input, AEC-Q100-qualified, narrow-body SOIC option with factory-configured UVLO and guaranteed <5 ns skew - making it optimal for cost-sensitive, space-constrained automotive OBC and inverter half-bridge implementations.
Availability
SI82E99BEE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor drives, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and reinforced isolation compliance.
Supply support for SI82E99BEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Ex family was developed to replace optocoupled gate drivers in high-reliability power systems, delivering superior CMTI, tighter timing specs, and automotive qualification using monolithic silicon-dioxide isolation.
FAQ
What is the input logic configuration of the SI82E99BEE-IS3R?
The SI82E99BEE-IS3R uses a single PWM input (pin 2) to generate complementary high-side (VOA) and low-side (VOB) gate drive outputs. Unlike dual-input variants, it does not accept separate VIA/VIB signals - this simplifies controller interface and eliminates external logic inversion. The PWM signal directly determines output states: high → VOA high / VOB low; low → VOA low / VOB high. SI82E99BEE-IS3R also includes an active-high EN pin (pin 11) for system-level fault shutdown.
Does the SI82E99BEE-IS3R support programmable dead time, and how is it implemented?
Yes, SI82E99BEE-IS3R supports user-programmable dead time via the DT pin (pin 10). A resistor (10–110 kΩ) connected from DT to GNDI sets dead time from 17.3 ns to 190 ns using tDT = 1.73 × RDT + 5.74. Connecting DT to VDDI disables dead time insertion and overlap protection, allowing dual independent drive. The device also enforces overlap protection - if both outputs would otherwise be high simultaneously, both are forced low to prevent shoot-through. SI82E99BEE-IS3R implements this entirely in hardware with no firmware dependency.
What safety certifications does the SI82E99BEE-IS3R hold?
SI82E99BEE-IS3R is UL 1577 recognized (6000 VRMS, 1 min), VDE 60747-17 certified (reinforced insulation), CSA 62368-1 and 60601-1 compliant (2 MOPP), and CQC GB4943.1 approved - all validating its 6 kVRMS isolation barrier. It meets reinforced insulation requirements for functional safety in automotive (ISO 26262) and industrial (IEC 61800-5-1) applications. The narrow-body SOIC-16 (IS3R) package achieves ≥8.3 mm creepage and 1500 VRMS working voltage, confirmed in the official Skyworks Certificate of Conformance.
How does the SI82E99BEE-IS3R handle undervoltage conditions on its power rails?
SI82E99BEE-IS3R includes independent UVLO monitors on VDDI (logic supply), VDDA (high-side gate supply), and VDDB (low-side gate supply). Each has factory-set thresholds (4/8/12/15 V options) with hysteresis. If VDDI falls below its UVLO threshold, both outputs are forced low regardless of input state. If only VDDA or VDDB drops out, the corresponding output (VOA or VOB) is clamped low via the shutdown clamp, preventing parasitic turn-on of the driven FET. This behavior is documented in Table 3 of the datasheet and ensures fail-safe operation during partial power loss - a key requirement for SI82E99BEE-IS3R in automotive OBC systems.
Is the SI82E99BEE-IS3R qualified for automotive applications?
Yes, SI82E99BEE-IS3R is AEC-Q100 qualified (Grade 1, –40 to +125 °C) and built using automotive-specific manufacturing flows. It supports automotive powertrain and charging applications including onboard chargers, DC-DC converters, and traction inverter auxiliary supplies. Its 6 kVRMS isolation, 10 kV bipolar surge rating, and CMTI >200 kV/μs meet stringent EMC and safety requirements for EV systems. Skyworks explicitly lists "Automotive grade is available" for the Si82E99x series in the datasheet, and SI82E99BEE-IS3R's OPN suffix confirms automotive qualification per ordering guide section 10.
SI82E99BEE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82E99BEE-IS3R FAQ
1.How can I place an order for SI82E99BEE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82E99BEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82E99BEE-IS3R reliable?
The price and inventory of SI82E99BEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82E99BEE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82E99BEE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82E99BEE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82E99BEE-IS3R?
SI82E99BEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82E99BEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82E99BEE-IS3R?
For technical support, including SI82E99BEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82E99BEE-IS3R requirements.
6.How does Aetrix verify that SI82E99BEE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82E99BEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82E99BEE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82E99BEE-IS3R?
All SI82E99BEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82E99BEE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82E99BEE-IS3R part is unused and in its original packaging.
Return procedure for SI82E99BEE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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