Skyworks Solutions Inc. SI82F39ABE-IS3R

Overview

SI82F39ABE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with Universal configuration, CMOS inputs, and Selectable Variable Current Drive (SelVCD™) supporting 3–20 V input supply, 5–30 V gate supply, <5 ns channel-to-channel skew, and 6 kVRMS isolation. It drives SiC/GaN FETs in half-bridge motor inverters requiring precise dead-time control and Miller clamping.

For engineers reviewing the SI82F39ABE-IS3R datasheet, SI82F39ABE-IS3R pinout, SI82F39ABE-IS3R application, or SI82F39ABE-IS3R equivalent, this page delivers verified functional identity, validated pin roles, confirmed SelVCD™ current settings, exact UVLO thresholds, and real-world timing behavior under shoot-through prevention and thermal-safe operation.

Technical Context

The SI82F39ABE-IS3R implements dual-channel capacitive isolation using differential RF-modulated OOK signaling across silicon dioxide barriers, enabling 200 kV/μs CMTI and stable timing across –40 to 125 °C. Its Universal pinout supports independent high-side/low-side control via VIA/VIB inputs with programmable dead time via external resistor on DT pin.

SelVCD™ operates as an eight-level current-source output: SPD+ sets sourcing current (VOA/VOB turn-on), SPD– sets sinking current (turn-off), both referenced to GNDA/GNDB. Integrated Miller clamp activates below VMCTA/B (~1.9 V) during VOH→VOL transitions, eliminating external gate resistors while maintaining ±10% current regulation over temperature and process for 8/12/15 V UVLO variants.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC package (IS3R suffix) with creepage-optimized layout for reinforced insulation. Pin 1 = VIA; Pin 16 = VDDI; Pins 12 & 13 = NC (no connection). All pins electrically validated per Skyworks Preliminary Data Sheet 206821A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.

Compared with SI82F39ABE-IS3R, Si8239BD-IS3R offers identical performance with inverted control logic, while UCC5390SCDWR trades flexibility for lower cost and reduced feature set-making SI82F39ABE-IS3R optimal for designs requiring independent channel tuning, universal topology support, and integrated Miller protection.

Availability

SI82F39ABE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, power inverters, and uninterruptible power supplies requiring stable component supply, AEC-Q100 compliance, and reinforced isolation certification.

Supply support for SI82F39ABE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in EV powertrain, renewable energy, and industrial motor control-leveraging proprietary capacitive isolation to replace aging optocoupler-based solutions.

FAQ

What is the isolation rating and safety certification status of SI82F39ABE-IS3R?

SI82F39ABE-IS3R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage and 10 kV bipolar surge rating meet IEC 61800-5-1 and IEC 62109 requirements for industrial and automotive inverters. The device uses dual silicon dioxide capacitors for fault-tolerant isolation.

Does SI82F39ABE-IS3R support both high-side/low-side and dual independent configurations?

Yes, SI82F39ABE-IS3R uses a Universal pinout with VIA and VIB inputs, enabling both high-side/low-side half-bridge operation (with DT-programmed dead time) and dual independent channel control (with DT tied to VDDI to disable dead time). This eliminates PCB redesign when migrating between topologies, unlike fixed PWM-input drivers such as Si82F99x variants.

How does the SelVCD™ technology in SI82F39ABE-IS3R eliminate the need for external gate resistors?

SI82F39ABE-IS3R's SelVCD™ implements eight-level programmable current-source outputs: SPD+ sets sourcing current (0.5–6 A), SPD− sets sinking current. Because output current is actively regulated ±10% over temperature and process, gate charging/discharging is precisely controlled without dissipating power in external resistors-enabling faster switching and eliminating resistor-induced Miller clamp degradation.

What is the function of the Miller clamp in SI82F39ABE-IS3R and when does it activate?

The Miller clamp in SI82F39ABE-IS3R activates automatically when VOA or VOB falls below ~1.9 V during turn-off transitions, engaging maximum sinking current (SPD7− level) to rapidly discharge the power switch gate and suppress false turn-on. It remains active until the next rising edge, and requires no external components-unlike discrete clamp circuits that add complexity and delay.

What UVLO thresholds are implemented in SI82F39ABE-IS3R and how do they protect power switches?

SI82F39ABE-IS3R features independently monitored UVLO on VDDI (logic supply), VDDA (high-side gate supply), and VDDB (low-side gate supply), all set to 12 V nominal with hysteresis. If any supply drops below its UVLO threshold, the corresponding output (VOA or VOB) is forced low, preventing partial turn-on of SiC/GaN FETs that could cause destructive shoot-through or thermal runaway.