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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82F39AEE-IS3R

Name: SI82F39AEE-IS3R
Brand: Skyworks Solutions Inc.
SKU: SI82F39AEE-IS3R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82F39AEE-IS3R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82F39AEE-IS3R.pdf

Description:: 6 KV 2-CHANNEL ISOLATED SELVCD G

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Product details

Overview

SI82F39AEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with Universal configuration, CMOS inputs, and Selectable Variable Current Drive (SelVCD™) for driving SiC/GaN FETs and IGBTs in half-bridge topologies. It delivers 6 kVRMS isolation, <5 ns channel-to-channel skew, 200 kV/μs CMTI, and programmable dead time via external resistor on DT pin. Used in onboard chargers and motor drives requiring high reliability and Miller clamping.

For engineers reviewing the SI82F39AEE-IS3R datasheet, SI82F39AEE-IS3R pinout, SI82F39AEE-IS3R application, or SI82F39AEE-IS3R equivalent, this page provides verified functional identity, validated pin mapping for SOIC-16 narrow-body package, confirmed SelVCD™ current levels, UVLO thresholds, and real-world design implications of SPD± programming and Miller clamp behavior - all derived from Skyworks' official preliminary datasheet (206821A, May 2024).

Technical Context

The SI82F39AEE-IS3R implements dual-channel capacitive isolation using differential RF-modulated OOK signaling across silicon dioxide barriers, enabling 6 kVRMS reinforced insulation and 1500 VRMS working voltage. Its Universal configuration supports independent control of VOA and VOB via VIA and VIB inputs, with EN enable logic and DT-programmable dead time.

It integrates SelVCD™ as a precision current source (±10% tolerance over temp/process for 8/12/15 V UVLO variants), Miller clamp triggered at VMCTA/B threshold during VOH→VOL transitions, and independent UVLO monitoring on VDDI, VDDA, and VDDB rails - each with configurable thresholds (4/8/12/15 V).

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements.
Channel Skew	<5 ns - enables precise timing alignment between high-side and low-side gate drive signals in half-bridge circuits.
CMTI	>200 kV/μs - ensures robust noise immunity in high-dV/dt environments like SiC/GaN inverters.
Input Supply Range	3 V to 20 V - supports direct interface with MCU GPIOs, FPGA outputs, or level-shifted control logic without external regulators.
Gate Supply Range	5 V to 30 V - accommodates wide-range bias supplies for diverse power switches including 12 V, 15 V, and 20 V gate drivers.
UVLO Thresholds	Configurable at 4 V, 8 V, 12 V, or 15 V - prevents erratic switching during brown-out conditions while matching common gate driver supply rails.
SelVCD™ Levels	8 discrete sourcing/sinking current settings - eliminates need for external gate resistors and enables dynamic turn-on/turn-off speed tuning.
Operating Temp	–40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive-grade operation in engine bay and traction inverter applications.

Pinout & Package

Narrow-body 16-pin SOIC (SOIC-16 NB) package with 1.27 mm pitch and creepage ≥8.3 mm. Pin 1 marked by dot; pins 12 and 13 are NC (no connection). Isolation barrier separates input-side (pins 1–8, 16) from output-side (pins 9–11, 14–15).

Pin/Terminal	Circuit Role	Design Meaning
VIA	Non-inverting logic input for driver A	CMOS-compatible, Schmitt-triggered input controlling VOA directly; deglitched for noise immunity.
VIB	Non-inverting logic input for driver B	Independent control path for VOB; enables true dual-driver operation without shared PWM logic.
EN	Active-high enable signal	Asserting EN = high enables both outputs; deasserting forces VOA/VOB low unconditionally - used for system-level fault shutdown.
DT	Dead time programming input	Resistor-to-GND sets dead time (10–110 kΩ → ~10–120 ns); connecting to VDDI disables dead time for universal dual-driver mode.
SPD+	Sourcing current programming input	Resistor-to-GND selects one of eight turn-on current levels; enables gate drive strength optimization without discrete resistors.
SPD−	Sinking current programming input	Resistor-to-GND selects one of eight turn-off current levels; works in tandem with SPD+ to balance rise/fall times and minimize Miller-induced shoot-through.
VDDA / GNDA	Power and ground for driver A	Independent supply domain for high-side or low-side output stage; supports split-rail configurations and separate UVLO monitoring.
VDDB / GNDB	Power and ground for driver B	Electrically isolated from VDDA/GNDA; allows asymmetric gate drive voltages (e.g., +15 V/–5 V) for enhanced SiC FET control.
VDDI / GNDI	Logic input power and ground	Galvanically isolated input supply domain; decouples digital control from noisy power domains and enables floating controller interfaces.
VOA / VOB	Driver A and B outputs	Current-source outputs with integrated Miller clamp; sink/source up to 4 A peak (per SelVCD™ setting); no external gate resistors required.

Key Features

Feature	Design Value
Selectable Variable Current Drive (SelVCD™)	Eight discrete sourcing/sinking current levels set via SPD+/SPD− resistors - replaces gate resistors and enables adaptive switching speed tuning for EMI/efficiency trade-offs.
Integrated Miller Clamp	Automatically engages when VOA/VOB falls below VMCTA/B (~2.5 V typical) - suppresses Miller-induced false turn-on during high dV/dt commutation without external components.
Programmable Dead Time	Resistor-controlled DT pin sets dead time from ~10 ns to ~120 ns - prevents shoot-through in half-bridge configurations while retaining flexibility for universal dual-driver use.
AEC-Q100 Qualified	Grade 1 (–40 °C to +125 °C) qualification with automotive-specific manufacturing flow - ensures low defectivity and long-term reliability in traction and charging systems.
No Unknown Output States	Defined VOA/VOB logic-low state during UVLO, power loss, or EN deassertion - eliminates risk of unintended power switch conduction during fault or startup conditions.
High CMTI & Low Skew	200 kV/μs common-mode transient immunity and <5 ns channel-to-channel skew - maintains timing integrity in fast-switching SiC/GaN inverters with >50 V/ns transients.

Applications

Onboard Charger (OBC)	Industrial Motor Drive
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers using SiC MOSFET half-bridges. IC Role / Device Role / Timing Role: Isolated dual gate driver providing independent, skew-controlled turn-on/turn-off of high-side and low-side SiC switches with programmable dead time. Use Value: Enables >100 kHz switching with minimal shoot-through risk and reduced EMI via SelVCD™-tuned edge rates - critical for meeting CISPR-25 Class 5 emissions limits.	Use Scenario: Field-oriented control (FOC) of permanent magnet synchronous motors (PMSM) in HVAC and industrial automation inverters. IC Role / Device Role / Timing Role: Universal-configured gate driver delivering precise, isolated timing to IGBTs or SiC modules with synchronized enable/disable and Miller clamping. Use Value: Eliminates external gate resistors and Miller diodes while maintaining <5 ns skew - improves torque ripple performance and thermal margin under overload conditions.
Uninterruptible Power Supply (UPS)	DC-DC Converter for Server PSU
Use Scenario: High-efficiency 3-phase inverter stage in online UPS systems with battery backup and grid synchronization. IC Role / Device Role / Timing Role: Dual isolated driver managing complementary switching in three half-bridge legs with coordinated EN-based system shutdown. Use Value: 6 kVRMS isolation and 1500 VRMS working voltage meet IEC 62368-1 safety requirements for double-insulated UPS designs without additional creepage/clearance measures.	Use Scenario: 48 V–12 V or 48 V–5 V non-isolated buck converters in AI server power delivery networks (PDNs) using GaN FETs. IC Role / Device Role / Timing Role: High-speed gate driver with ultra-low propagation delay skew ensuring clean zero-voltage switching (ZVS) in multi-phase interleaved topologies. Use Value: 200 kV/μs CMTI prevents false triggering from adjacent high-current phases; SelVCD™ allows fine-tuning of GaN gate drive to minimize reverse conduction losses.

Onboard Charger (OBC)

Industrial Motor Drive

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers using SiC MOSFET half-bridges.

IC Role / Device Role / Timing Role: Isolated dual gate driver providing independent, skew-controlled turn-on/turn-off of high-side and low-side SiC switches with programmable dead time.

Use Value: Enables >100 kHz switching with minimal shoot-through risk and reduced EMI via SelVCD™-tuned edge rates - critical for meeting CISPR-25 Class 5 emissions limits.

Use Scenario: Field-oriented control (FOC) of permanent magnet synchronous motors (PMSM) in HVAC and industrial automation inverters.

IC Role / Device Role / Timing Role: Universal-configured gate driver delivering precise, isolated timing to IGBTs or SiC modules with synchronized enable/disable and Miller clamping.

Use Value: Eliminates external gate resistors and Miller diodes while maintaining <5 ns skew - improves torque ripple performance and thermal margin under overload conditions.

Uninterruptible Power Supply (UPS)

DC-DC Converter for Server PSU

Use Scenario: High-efficiency 3-phase inverter stage in online UPS systems with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Dual isolated driver managing complementary switching in three half-bridge legs with coordinated EN-based system shutdown.

Use Value: 6 kVRMS isolation and 1500 VRMS working voltage meet IEC 62368-1 safety requirements for double-insulated UPS designs without additional creepage/clearance measures.

Use Scenario: 48 V–12 V or 48 V–5 V non-isolated buck converters in AI server power delivery networks (PDNs) using GaN FETs.

IC Role / Device Role / Timing Role: High-speed gate driver with ultra-low propagation delay skew ensuring clean zero-voltage switching (ZVS) in multi-phase interleaved topologies.

Use Value: 200 kV/μs CMTI prevents false triggering from adjacent high-current phases; SelVCD™ allows fine-tuning of GaN gate drive to minimize reverse conduction losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8239AD-IS3R	Same SOIC-16 NB package and Universal configuration, but uses DIS (disable) instead of EN (enable) logic; identical SelVCD™, CMTI, and isolation specs.	Requires active-high disable signal instead of enable; truth table behavior differs during fault handling - DIS asserts low-side priority in overlap protection.	Select Si8239AD-IS3R only if system architecture mandates disable-first safety sequencing rather than enable-gated operation.
UCC5870QDWJRQ1	Texas Instruments part with 5.7 kVRMS isolation, 100 kV/μs CMTI, and integrated DESAT detection; requires external gate resistors and lacks SelVCD™ current-source architecture.	Includes built-in desaturation fault reporting and higher peak output current (10 A), but adds complexity with external components and lacks Miller clamp integration.	Choose UCC5870QDWJRQ1 when desat protection is mandatory and board space allows for gate resistors and filter components; SI82F39AEE-IS3R preferred for resistorless, Miller-clamped simplicity.

Compared with Si8239AD-IS3R, SI82F39AEE-IS3R offers enable-driven control for safer default-off behavior; versus UCC5870QDWJRQ1, it eliminates gate resistors and integrates Miller clamping - reducing BOM count and layout sensitivity in high-density SiC/GaN designs.

Availability

SI82F39AEE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, uninterruptible power supplies, and server DC-DC converters requiring stable component supply, automotive-grade reliability, and resistorless gate drive implementation.

Supply support for SI82F39AEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, infrastructure, and industrial markets.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in next-generation power electronics - emphasizing capacitor-based isolation, SelVCD™ current-source architecture, and AEC-Q100 qualification for SiC/GaN-based traction and charging systems.

FAQ

What is the isolation voltage rating of the SI82F39AEE-IS3R?

The SI82F39AEE-IS3R is rated for 6 kVRMS isolation for 1 minute per UL 1577, with 1500 VRMS working voltage and compliance to VDE 60747-17, CSA 62368-1, and GB4943.1 standards. This reinforced insulation rating enables its use in safety-critical applications such as automotive onboard chargers and industrial inverters where galvanic separation between control and power domains is mandatory.

Does the SI82F39AEE-IS3R require external gate resistors?

No, the SI82F39AEE-IS3R does not require external gate resistors due to its Selectable Variable Current Drive (SelVCD™) architecture. The device operates as a precision current source with eight programmable sourcing and sinking levels set via SPD+ and SPD− pins. This eliminates gate resistor placement, reduces component count, and enables dynamic switching speed tuning - a key advantage over traditional voltage-mode gate drivers like the UCC5870QDWJRQ1.

How is dead time configured on the SI82F39AEE-IS3R?

Dead time on the SI82F39AEE-IS3R is configured using an external resistor (R_DT) connected between the DT pin and GNDI. Values from 10 kΩ to 110 kΩ yield typical dead times from ~10 ns to ~120 ns, calculated as t_DT = 1.73 × R_DT + 5.74 (ns). Connecting DT to VDDI disables dead time insertion entirely, allowing the SI82F39AEE-IS3R to operate in universal dual-driver mode without overlap protection.

What is the function of the Miller clamp in the SI82F39AEE-IS3R?

The Miller clamp in the SI82F39AEE-IS3R engages automatically when VOA or VOB falls below VMCTA/B (~2.5 V), temporarily boosting sinking current to SPD7− level to suppress Miller-induced false turn-on during high dV/dt transitions. It operates directly through the VOA/VOB pins - requiring no external diodes or resistors - and disengages only upon the next VOH-to-VOL transition, ensuring robust immunity against parasitic turn-on in SiC and GaN FETs.

Is the SI82F39AEE-IS3R qualified for automotive applications?

Yes, the SI82F39AEE-IS3R is AEC-Q100 Grade 1 qualified (–40 °C to +125 °C) and built using automotive-specific manufacturing flows. It supports automotive applications including traction inverters and onboard chargers, with safety certifications pending for UL 1577, CSA 62368-1 (2 MOPP), and VDE 60747-17 - confirming suitability for ASIL-B system integration where reinforced isolation and long-term reliability are required.

SI82F39AEE-IS3R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82F39AEE-IS3R FAQ

1.How can I place an order for SI82F39AEE-IS3R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F39AEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F39AEE-IS3R reliable?

The price and inventory of SI82F39AEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39AEE-IS3R is usually 5 days.

3.What payment methods are accepted for SI82F39AEE-IS3R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39AEE-IS3R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F39AEE-IS3R?

SI82F39AEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F39AEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F39AEE-IS3R?

For technical support, including SI82F39AEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39AEE-IS3R requirements.

6.How does Aetrix verify that SI82F39AEE-IS3R is sourced from the original manufacturer or authorized distributors?

All SI82F39AEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39AEE-IS3R meets industry standards.

7.What is the process for return or replacement of SI82F39AEE-IS3R?

All SI82F39AEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39AEE-IS3R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F39AEE-IS3R part is unused and in its original packaging.

Return procedure for SI82F39AEE-IS3R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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