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Skyworks Solutions Inc. SI82F39BBC-IS1
- Part No.:
- SI82F39BBC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F39BBC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED SELVC
- Quantity:
- Payment:
- Shipping:
Inventory:4,162
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Product details
Overview
SI82F39BBC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver in universal configuration with enable (EN) input, designed for high-side/low-side half-bridge control in SiC/GaN-based power converters. It delivers 6 kVRMS isolation, <5 ns channel-to-channel skew, 200 kV/μs CMTI, and Selectable Variable Current Drive (SelVCD™) across eight sourcing/sinking levels - enabling direct gate drive of wide-bandgap FETs without external gate resistors in onboard chargers and motor drives.
For engineers reviewing the SI82F39BBC-IS1 datasheet, SI82F39BBC-IS1 pinout, SI82F39BBC-IS1 application, or SI82F39BBC-IS1 equivalent, this page provides verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed EN-input truth table behavior, SelVCD™ current calibration data, and automotive-grade AEC-Q100 qualification status - all directly extracted from Skyworks' May 2024 Preliminary Data Sheet 206821A.
Technical Context
The SI82F39BBC-IS1 implements dual CMOS-isolated channels using differential RF-modulated capacitive coupling across silicon dioxide barriers, delivering reinforced insulation and deterministic timing. Its universal pinout supports both independent dual-driver and half-bridge modes via DT pin configuration, with EN input enabling synchronous shutdown of both VOA and VOB outputs regardless of input state.
SelVCD™ operates as a precision current source: SPD+ and SPD− pins set sourcing/sinking current independently across eight discrete levels, each maintaining ±10% tolerance over temperature and process variation for UVLO ≥8 V variants. Integrated Miller clamp activates at VMCTA/B threshold during VOH→VOL transitions, bypassing external clamping components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements. |
| Channel Skew | <5 ns - ensures precise timing alignment between VOA and VOB for shoot-through prevention in half-bridge topologies. |
| CMTI | >200 kV/μs - guarantees noise immunity in high-dV/dt SiC/GaN switching environments. |
| Input Supply Range | 3 V to 20 V - supports direct interface with 3.3 V, 5 V, and 15 V logic controllers without level shifting. |
| Gate Supply Range | 5 V to 30 V - enables direct drive of SiC FETs requiring >15 V gate bias and GaN devices with 5–12 V thresholds. |
| UVLO Threshold | Configurable at 4 V / 8 V / 12 V / 15 V - prevents erratic switching during brown-out conditions; SI82F39BBC-IS1 uses 8 V variant. |
| Operating Temp | –40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive onboard chargers and traction inverters. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB), creepage ≥8.3 mm, clearance ≥8.3 mm, reinforced insulation barrier between input and output sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for driver A | CMOS-compatible, Schmitt-triggered, deglitch-enabled input controlling VOA directly in universal mode. |
| VIB | Non-inverting logic input for driver B | Independent control path for VOB; enables true dual-driver operation when DT = VDDI. |
| EN | Active-high enable signal | Unconditionally forces VOA and VOB low when deasserted (logic low); overrides all other inputs including UVLO state. |
| DT | Dead time programming input | Resistor-to-GND sets dead time (10–110 kΩ → 17.3–110 ns); tied to VDDI disables dead time and overlap protection. |
| SPD+ | Sourcing current control input | Sets VOA/VOB turn-on current across eight levels; voltage or resistor-programmable with ±10% accuracy (8 V UVLO). |
| SPD− | Sinking current control input | Sets VOA/VOB turn-off current independently; engages integrated Miller clamp when VO drops below VMCTA/B. |
| VDDA / GNDA | Driver A gate supply and ground | Isolated 5–30 V power domain for VOA output stage; independent of VDDB/GNDB for asymmetrical rail designs. |
| VDDB / GNDB | Driver B gate supply and ground | Separate isolated supply domain allows independent biasing of high-side and low-side FETs in split-rail systems. |
| VDDI / GNDI | Logic input supply and ground | 3–20 V domain powering digital isolation barrier and input logic; UVLO monitoring prevents false triggering. |
| VOA / VOB | Gate driver outputs | Current-source outputs with built-in Miller clamp; no external gate resistors required for SiC/GaN FETs. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels, ±10% tolerance over temp/process - eliminates gate resistors and enables dynamic slew rate tuning. |
| Integrated Miller Clamp | Activates automatically at VMCTA/B threshold during VOH→VOL transition - suppresses Miller-induced false turn-on without external components. |
| Programmable Dead Time | 17.3–110 ns via single resistor on DT pin - prevents shoot-through in half-bridge configurations while retaining overlap protection. |
| AEC-Q100 Qualified | Grade 1 (–40 °C to +125 °C) with automotive-specific manufacturing flow - certified for EV onboard chargers and auxiliary inverters. |
| High-Voltage Logic Inputs | CMOS/Schmitt-triggered inputs tolerant up to 20 V with deglitch filter option - compatible with microcontrollers, DSPs, and FPGA I/O without buffers. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW EV charging systems using SiC MOSFET half-bridges. IC Role / Device Role / Timing Role: Isolated dual gate driver providing synchronized, skew-controlled turn-on/turn-off of high-side and low-side SiC switches with programmable dead time. Use Value: Enables >97% system efficiency by minimizing switching losses through precise SelVCD™-tuned gate currents and eliminating external gate resistor thermal dissipation. |
Use Scenario: Field-oriented control (FOC) of permanent magnet synchronous motors (PMSM) in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Universal-configured isolated driver operating in dual-driver mode to independently control two inverter legs with matched propagation delay. Use Value: Reduces torque ripple and acoustic noise via <5 ns channel skew and supports sensorless FOC through fast, jitter-free PWM edge fidelity. |
| Renewable Energy Inverter | Server PSU with GaN HEMTs |
Use Scenario: Three-phase string inverters for residential solar PV systems using 650 V SiC modules. IC Role / Device Role / Timing Role: High-CMTI isolated driver ensuring reliable gate control under high common-mode transients from transformerless topologies. Use Value: Prevents false triggering during lightning surge events (4 kV HBM ESD, 10 kV bipolar surge rating) while maintaining tight timing across temperature. |
Use Scenario: High-frequency (500 kHz–1 MHz) LLC resonant converters in AI server PSUs using 100 V GaN HEMTs. IC Role / Device Role / Timing Role: Dual-current-source driver delivering fast, controlled turn-on/turn-off with dynamic SPD± adjustment for load-dependent optimization. Use Value: Achieves <10 ns rise/fall times with zero gate resistor parasitics, reducing conduction losses and improving transient response in multi-phase VRMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BB-IM1 | Same Si82Fx family, wide-body SOIC-14 package; identical SelVCD™, UVLO, and CMTI specs but lacks NC pins and has reduced creepage (7.5 mm). | Preferred for space-constrained industrial SMPS where SOIC-14 footprint saves PCB area; not automotive-qualified. | Select when board layout prioritizes smaller footprint over automotive compliance and maximum creepage. |
| UCC5390SCD | Texas Instruments part with 5.7 kVRMS isolation, 100 kV/μs CMTI, and fixed 4-A/6-A peak drive - no SelVCD™ or SPD± programming. | Better suited for cost-sensitive, non-dynamic applications like basic UPS inverters where fixed drive strength suffices. | Choose only if design requires TI ecosystem support and does not need variable current tuning or Miller clamp integration. |
Compared with Si8239BB-IM1, SI82F39BBC-IS1 offers higher creepage, AEC-Q100 qualification, and SOIC-16 mechanical robustness; versus UCC5390SCD, it provides superior noise immunity, programmable slew control, and integrated Miller clamping - critical for SiC/GaN reliability in automotive and high-density power systems.
Availability
SI82F39BBC-IS1 is available at Aetrix Electronics and suitable for onboard chargers, industrial motor drives, renewable energy inverters, and GaN-based server PSUs requiring stable component supply across automotive and industrial production ramps.
Supply support for SI82F39BBC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless infrastructure, automotive, and industrial markets.
The Si82Fx product line was engineered specifically for high-reliability isolated gate driving in wide-bandgap power systems - emphasizing CMTI resilience, timing precision, and integrated protection features like SelVCD™ and Miller clamping.
FAQ
What is the isolation rating and safety certification status of the SI82F39BBC-IS1?
The SI82F39BBC-IS1 provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its reinforced insulation barrier meets 2 MOPP requirements per IEC 60601-1, making it suitable for medical and automotive applications where galvanic separation is critical. All ratings apply directly to the SI82F39BBC-IS1 per Skyworks Preliminary Data Sheet 206821A.
Does the SI82F39BBC-IS1 support both high-side/low-side and dual independent driver configurations?
Yes, the SI82F39BBC-IS1 operates in universal configuration: when the DT pin is connected to GND via resistor, it functions as a high-side/low-side driver with programmable dead time; when DT is tied to VDDI, dead time and overlap protection are disabled, enabling true dual independent driver operation where VOA follows VIA and VOB follows VIB. This flexibility is confirmed in Figures 2 and 14 of the SI82F39BBC-IS1 datasheet.
How does the SelVCD™ technology in the SI82F39BBC-IS1 eliminate the need for external gate resistors?
SelVCD™ configures the SI82F39BBC-IS1's VOA and VOB outputs as precision current sources - sourcing and sinking currents are set independently via SPD+ and SPD− pins across eight calibrated levels. Because output current remains regulated within ±10% over temperature and process (for 8 V UVLO variant), external gate resistors become redundant for controlling dV/dt or power loss. This also enables the integrated Miller clamp to function directly at the gate node without resistor-induced voltage drop.
What is the role of the EN pin in the SI82F39BBC-IS1, and how does it interact with UVLO conditions?
The EN pin is an active-high enable input that unconditionally forces both VOA and VOB low when deasserted (logic low), overriding all other inputs including VIA/VIB states and UVLO conditions. However, if VDDI falls below its UVLO threshold (8 V for SI82F39BBC-IS1), the EN pin becomes inactive and outputs remain low regardless of EN state. This dual-layer safety ensures fail-safe shutdown during power faults or brownouts.
Is the SI82F39BBC-IS1 qualified for automotive applications, and what does its AEC-Q100 Grade 1 rating mean?
Yes, the SI82F39BBC-IS1 is AEC-Q100 Grade 1 qualified, meaning it is manufactured using automotive-specific flows at all stages - wafer fabrication, assembly, and test - to ensure low defectivity and robustness for under-hood environments. Grade 1 specifies operation from –40 °C to +125 °C ambient, validated through HTOL, TC, and ESD testing. This makes SI82F39BBC-IS1 suitable for EV onboard chargers, DC-DC converters, and auxiliary inverters per ISO 26262 ASIL-B system requirements.
SI82F39BBC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F39BBC-IS1 FAQ
1.How can I place an order for SI82F39BBC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F39BBC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F39BBC-IS1 reliable?
The price and inventory of SI82F39BBC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39BBC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82F39BBC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39BBC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F39BBC-IS1?
SI82F39BBC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F39BBC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F39BBC-IS1?
For technical support, including SI82F39BBC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39BBC-IS1 requirements.
6.How does Aetrix verify that SI82F39BBC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82F39BBC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39BBC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82F39BBC-IS1?
All SI82F39BBC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39BBC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F39BBC-IS1 part is unused and in its original packaging.
Return procedure for SI82F39BBC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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