Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Skyworks Solutions Inc. SI82F39BBC-IS1R

Part No.:
SI82F39BBC-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
-
Datasheet:
AetrixSI82F39BBC-IS1R.pdf
Description:
3.75 KV 2-CHANNEL ISOLATED SELVC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,101

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SI82F39BBC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver in narrow-body 16-pin SOIC package, configured for universal (independent high-side/low-side) operation with enable (EN) input. It delivers ±1.5 A peak sourcing/sinking current via SelVCD™, supports 3–20 V logic supply and 5–30 V gate supply, and targets SiC/GaN FETs in half-bridge motor inverters and onboard chargers.

For engineers reviewing the SI82F39BBC-IS1R datasheet, SI82F39BBC-IS1R pinout, SI82F39BBC-IS1R application, or SI82F39BBC-IS1R equivalent, key selection criteria include channel-to-channel skew < 5 ns, CMTI > 200 kV/µs, integrated Miller clamp, programmable dead time, and AEC-Q100 qualification for automotive powertrain systems.

Technical Context

The SI82F39BBC-IS1R implements dual CMOS-isolated channels using silicon-dioxide capacitive isolation, enabling 6 kVRMS reinforced insulation and 1500 VRMS working voltage. Its functional architecture includes independent VIA/VIB inputs, EN-controlled enable logic, SPD± analog programming for eight-level current drive, and DT-resistor-programmable dead time.

It operates as a current-source output stage with ±10% current regulation over temperature and process for UVLO = 8 V/12 V/15 V variants, and integrates shutdown clamps that force VOA/VOB low during UVLO, DIS assertion, or unpowered VDDA/VDDB - ensuring no undefined output states under fault conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Isolation Voltage6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements
Channel Skew< 5 ns - enables precise timing alignment between high-side and low-side gate signals in half-bridge topologies
CMTI> 200 kV/µs - ensures robust noise immunity in high-dV/dt environments like SiC/GaN switching
Output Current±1.5 A peak (SPD7 level) - sufficient to drive 1200 V SiC MOSFETs with fast turn-on/turn-off without external gate resistors
UVLO Threshold12 V (typical) - provides stable gate drive only when gate supply exceeds safe minimum for full enhancement of wide-bandgap devices
Operating Temp–40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for under-hood automotive applications
PackageNarrow-body 16-pin SOIC - 10.3 mm × 10.3 mm footprint compatible with standard PCB assembly and thermal relief design

Pinout & Package

Narrow-body 16-pin SOIC (NB SOIC-16) package with 1.27 mm pitch, creepage ≥ 8.0 mm, and reinforced insulation barrier between input and output sides.

Pin/TerminalCircuit RoleDesign Meaning
VIANon-inverting logic input for channel ADirectly controls VOA state; CMOS-compatible with deglitch filter option for noise immunity
VIBNon-inverting logic input for channel BDirectly controls VOB state; independent of VIA, enabling universal dual-driver configuration
ENActive-high enable inputUnconditionally forces VOA/VOB low when deasserted; enables fail-safe shutdown in system control logic
DTDead time programming inputResistor-to-GND sets dead time (10–110 kΩ → 18–200 ns); tied to VDDI disables dead time for dual-driver mode
SPD+Sourcing current programming inputResistor-to-GND selects one of eight sourcing current levels (0.25–1.5 A); eliminates need for external turn-on gate resistors
SPD−Sinking current programming inputResistor-to-GND selects one of eight sinking current levels (0.25–1.5 A); enables integrated Miller clamp activation during turn-off
VOA / VOBGate driver outputsCurrent-source outputs with built-in Miller clamp; directly connect to power device gates without series resistors
VDDI / GNDILogic input supply3–20 V tolerant; powers isolated input side and enables robust interfacing with MCU/FPGA I/O
VDDA / GNDA / VDDB / GNDBIndependent gate driver supplies5–30 V per channel; allows asymmetric rail configurations and independent UVLO monitoring per output

Key Features

FeatureDesign Value
Selectable Variable Current Drive (SelVCD™)Eight programmable sourcing/sinking current levels (0.25–1.5 A) via SPD± pins - replaces discrete gate resistors and enables dynamic speed tuning
Integrated Miller ClampAutomatically engages when VOA/VOB falls below VMCTA/B (~2 V) - suppresses Miller-induced false turn-on in SiC/GaN FETs without external components
Programmable Dead TimeResistor-set dead time (18–200 ns) with overlap protection - prevents shoot-through in half-bridge configurations without external logic
AEC-Q100 QualifiedGrade 1 (–40 °C to +125 °C) qualification across manufacturing flow - ensures reliability for automotive traction inverters and OBCs
No Unknown Output StatesDefined VOA/VOB = low during UVLO, EN = low, DIS = high, or unpowered VDDA/VDDB - eliminates risk of unintended power device conduction

Applications

Motor DrivesOnboard Chargers (OBC)

Use Scenario: Three-phase inverter driving permanent magnet synchronous motors in EV traction systems.

IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, skew-controlled turn-on/turn-off of high-side and low-side SiC MOSFETs per phase leg.

Use Value: <5 ns skew and >200 kV/µs CMTI ensure clean commutation at 100+ kHz switching frequencies while maintaining functional safety integrity.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW EV onboard chargers.

IC Role / Device Role / Timing Role: Isolated gate driver controlling GaN HEMTs in totem-pole PFC and isolated LLC resonant stages.

Use Value: SelVCD™-programmed ±1.5 A drive and integrated Miller clamp enable zero-voltage switching (ZVS) across full load range without gate resistor tuning.

Power InvertersUninterruptible Power Supplies

Use Scenario: Solar string inverters converting DC from PV arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Universal gate driver operating in high-side/low-side mode for IGBTs in three-level NPC topologies.

Use Value: 6 kVRMS isolation and 1500 VRMS working voltage meet IEC 62109 and UL 1741 safety requirements for transformerless inverters.

Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz sine wave output during mains failure.

IC Role / Device Role / Timing Role: Isolated driver for IGBTs in inverter stage, synchronized to DSP-controlled PWM with minimal propagation delay variation.

Use Value: <5 ns channel skew and tight part-to-part matching ensure consistent dead time across parallel inverter modules for redundant power delivery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si8239BB-IM1RSame Si82Fx family, wide-body 14-pin SOIC package; identical electrical specs but different pinout and creepage (≥10.2 mm)Better suited for designs requiring higher creepage/clearance or space-constrained layouts where WB SOIC-14 fits better than NB SOIC-16Select Si8239BB-IM1R if board layout requires wider creepage or narrower package width (8.7 mm vs. 10.3 mm)
UCC5390SCDTexas Instruments part with 5.7 kVRMS isolation, 1.5 A drive, but uses transformer-based isolation and lacks SelVCD™ current programmingRequires external gate resistors and separate Miller clamp circuitry; not AEC-Q100 qualifiedChoose UCC5390SCD only for cost-sensitive industrial applications where automotive qualification and resistorless design are not required

Compared with SI82F39BBC-IS1R, Si8239BB-IM1R offers identical performance in a mechanically distinct package, while UCC5390SCD provides baseline isolation and drive capability but lacks programmable current control, integrated Miller clamp, and automotive qualification - making SI82F39BBC-IS1R the preferred choice for high-reliability SiC/GaN systems.

Availability

SI82F39BBC-IS1R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, power inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for SI82F39BBC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si82Fx product line was designed specifically for high-efficiency, high-reliability isolated gate driving in wide-bandgap power systems - emphasizing low skew, high CMTI, programmable drive strength, and automotive qualification.

FAQ

What is the isolation rating of the SI82F39BBC-IS1R and which safety standards does it meet?

The SI82F39BBC-IS1R provides 6 kVRMS isolation for 1 minute and 1500 VRMS working voltage. It is certified to UL 1577 (reinforced), VDE 60747-17 (reinforced), CSA 62368-1 (reinforced), and CSA 60601-1 (2 MOPP). These approvals confirm its suitability for medical, industrial, and automotive applications requiring reinforced insulation barriers between control and power domains.

Does the SI82F39BBC-IS1R support both high-side/low-side and dual independent configurations?

Yes, the SI82F39BBC-IS1R is a Universal-configuration device with VIA and VIB inputs, allowing it to operate either as independent high-side/low-side drivers or as two fully decoupled gate drivers. Connecting the DT pin to VDDI disables dead time and overlap protection, enabling pure dual-driver mode - confirmed in the Si82F39x functional block diagram and truth table.

How does the SelVCD™ technology in the SI82F39BBC-IS1R eliminate the need for external gate resistors?

SelVCD™ configures the SI82F39BBC-IS1R's outputs as precision current sources with eight selectable levels (0.25–1.5 A). Because output current is actively regulated - not voltage-limited - gate charging/discharging is controlled by current magnitude and duration, not RC time constants. This removes dependency on external resistors while enabling the integrated Miller clamp to function directly at VOA/VOB pins.

What is the purpose of the SPD+ and SPD− pins on the SI82F39BBC-IS1R?

The SPD+ and SPD− pins on the SI82F39BBC-IS1R set the sourcing and sinking current levels for both VOA and VOB outputs. Each pin accepts a resistor-to-GND to select one of eight discrete current values (e.g., 1.5 A at SPD7). This allows fine-grained optimization of switching speed, EMI, and Miller immunity - all without modifying the PCB layout or adding discrete components.

Is the SI82F39BBC-IS1R qualified for automotive applications?

Yes, the SI82F39BBC-IS1R is AEC-Q100 qualified Grade 1 (–40 °C to +125 °C) and manufactured using automotive-specific process flows. It supports automotive use cases including traction inverters, onboard chargers, and DC-DC converters, with full documentation of HTOL, TC, and ESD (4 kV HBM) test results in the preliminary datasheet.

SI82F39BBC-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
-
Number of Channels:
-
Voltage - Isolation:
-
Common Mode Transient Immunity (Min):
-
Propagation Delay tpLH / tpHL (Max):
-
Pulse Width Distortion (Max):
-
Rise / Fall Time (Typ):
-
Current - Output High, Low:
-
Current - Peak Output:
-
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
-
Grade:
-
Qualification:
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Approval Agency:
-

SI82F39BBC-IS1R FAQ

1.How can I place an order for SI82F39BBC-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F39BBC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F39BBC-IS1R reliable?

The price and inventory of SI82F39BBC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39BBC-IS1R is usually 5 days.

3.What payment methods are accepted for SI82F39BBC-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39BBC-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F39BBC-IS1R?

SI82F39BBC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F39BBC-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F39BBC-IS1R?

For technical support, including SI82F39BBC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39BBC-IS1R requirements.

6.How does Aetrix verify that SI82F39BBC-IS1R is sourced from the original manufacturer or authorized distributors?

All SI82F39BBC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39BBC-IS1R meets industry standards.

7.What is the process for return or replacement of SI82F39BBC-IS1R?

All SI82F39BBC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39BBC-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F39BBC-IS1R part is unused and in its original packaging.

Return procedure for SI82F39BBC-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SI82F39BBC-IS1R Tags

  • SI82F39BBC-IS1R
  • SI82F39BBC-IS1R PDF
  • SI82F39BBC-IS1R Datasheet
  • SI82F39BBC-IS1R Specifications
  • SI82F39BBC-IS1R Images
  • Skyworks Solutions Inc.
  • Skyworks Solutions Inc. SI82F39BBC-IS1R
  • Buy SI82F39BBC-IS1R
  • SI82F39BBC-IS1R Price
  • SI82F39BBC-IS1R Distributor
  • SI82F39BBC-IS1R Supplier
  • SI82F39BBC-IS1R Wholesale
Related Products
TLP152(TPL,E
TLP152(TPL,E

Toshiba Semiconductor and Storage

HT0740LG-G
HT0740LG-G

Microchip Technology

FOD8314TR2
FOD8314TR2

onsemi

1EDI60N12AFXUMA1
1EDI60N12AFXUMA1

Infineon Technologies

1EDB7275FXUMA1
1EDB7275FXUMA1

Infineon Technologies

UCC5350MCDR
UCC5350MCDR

Texas Instruments

2EDB7259KXUMA1
2EDB7259KXUMA1

Infineon Technologies

UCC5304DWVR
UCC5304DWVR

Texas Instruments

SI8261BBC-C-ISR
SI8261BBC-C-ISR

Skyworks Solutions Inc.

HT0440LG-G
HT0440LG-G

Microchip Technology

HCPL-0302-500E
HCPL-0302-500E

Broadcom Limited

STGAP2HSCMTR
STGAP2HSCMTR

STMicroelectronics

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER