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Skyworks Solutions Inc. SI82F39BEC-IS1R
- Part No.:
- SI82F39BEC-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F39BEC-IS1R.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED SELVC
- Quantity:
- Payment:
- Shipping:
Inventory:1,341
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Product details
Overview
SI82F39BEC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with Universal configuration, CMOS input interface, and Selectable Variable Current Drive (SelVCD™) supporting 8-level sourcing/sinking current control. It delivers <5 ns channel-to-channel skew, 200 kV/µs CMTI, and 6 kVRMS isolation for driving SiC/GaN FETs in half-bridge motor inverters. Operates from 3–20 V logic supply and 5–30 V gate supply.
For engineers reviewing the SI82F39BEC-IS1R datasheet, SI82F39BEC-IS1R pinout, SI82F39BEC-IS1R application, or SI82F39BEC-IS1R equivalent, this page provides verified functional identity, validated pin roles, confirmed isolation and timing specs, real-world use cases in power conversion, and two rigorously cross-checked alternative parts with documented technical differences.
Technical Context
The SI82F39BEC-IS1R implements dual capacitive isolation using silicon dioxide barriers, enabling differential RF-modulated signal transmission with OOK encoding for high fault tolerance and precise timing. Its Universal configuration supports independent control of both channels via VIA and VIB inputs, with dead time programmability via external resistor on DT pin.
It integrates SelVCD™ current-source outputs with dynamic Miller clamping triggered at VMCTA/B threshold, eliminating external gate resistors while maintaining ±10% current regulation across temperature and process variation for UVLO = 8 V/12 V/15 V variants. The EN pin enables unconditional low-state forcing of VOA/VOB during system safety shutdown.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets reinforced insulation requirements per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel Skew | <5 ns - ensures synchronous switching in high-frequency half-bridge topologies without shoot-through risk. |
| CMTI | >200 kV/µs - prevents false triggering in noisy high-dV/dt environments like SiC/GaN-based inverters. |
| Input Supply Range | 3 V to 20 V - compatible with 3.3 V, 5 V, and 12 V controller logic without level-shifting. |
| Gate Supply Range | 5 V to 30 V - supports direct drive of IGBTs, SiC MOSFETs, and GaN HEMTs up to 1200 V systems. |
| UVLO Threshold | Configurable at 4 V / 8 V / 12 V / 15 V - prevents erratic operation during brown-out or startup transients. |
| Operating Temp | –40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive traction inverter modules. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with 1.27 mm pitch and creepage ≥8.3 mm. RoHS-compliant, halogen-free, and rated for 1500 VRMS working voltage.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for Channel A | CMOS-compatible, Schmitt-triggered, deglitch-enabled input controlling VOA directly in Universal mode. |
| VIB | Non-inverting logic input for Channel B | Independent control path for VOB; enables true dual-driver operation without shared PWM constraint. |
| EN | Active-high enable input | Drives VOA/VOB low unconditionally when deasserted - critical for functional safety shutdown sequences. |
| DT | Dead time programming input | Resistor-to-GND sets dead time (1.73×RDT + 5.74 ns); tied to VDDI disables dead time for dual-driver use. |
| SPD+ | Sourcing current control input | Selects one of eight turn-on current levels (SPD1–SPD8) via resistor divider or analog voltage - eliminates gate resistors. |
| SPD− | Sinking current control input | Selects one of eight turn-off current levels; enables Miller clamp activation below VMCTA/B threshold. |
| VDDA / GNDA | Channel A gate driver supply & ground | Independent 5–30 V power domain for high-side or low-side switch - supports split-rail gate biasing. |
| VDDB / GNDB | Channel B gate driver supply & ground | Electrically isolated from VDDA/GNDA - enables floating high-side drive without bootstrap complexity. |
| VDDI / GNDI | Logic input supply & ground | 3–20 V domain isolated from gate supplies - allows direct MCU/FPGA interfacing with no level translation. |
| VOA / VOB | Isolated gate driver outputs | Current-source outputs with integrated Miller clamp; deliver regulated sourcing/sinking current without external components. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels per channel, calibrated to ±10% over temp/process for 8/12/15 V UVLO variants. |
| Integrated Miller Clamp | Automatically engages when VOA/VOB falls below VMCTA/B, maximizing turn-off current (SPD7−) to suppress parasitic turn-on in SiC/GaN switches. |
| Programmable Dead Time | External resistor on DT pin sets delay between VOA/VOB transitions (10–110 kΩ → ~22–190 ns), preventing shoot-through in half-bridge configurations. |
| Universal Pinout | Independent VIA/VIB inputs allow asymmetric control - unlike High-Side/Low-Side variants that share PWM - enabling custom modulation schemes. |
| AEC-Q100 Qualified | Grade 1 (–40 °C to +125 °C) qualification with automotive-specific manufacturing flow ensures low defectivity for EV traction inverters. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Driving dual SiC MOSFETs in a 3-phase inverter for electric power steering (EPS) or HVAC compressor. IC Role / Device Role / Timing Role: Isolated dual gate driver providing independent channel control, sub-5 ns skew, and Miller clamping to prevent false turn-on during high dV/dt commutation. Use Value: Enables >100 kHz switching with reduced EMI and thermal stress, extending inverter lifetime in automotive under-hood environments. |
Use Scenario: Controlling high-side/low-side switches in bi-directional AC/DC and DC/DC stages of 11 kW OBCs. IC Role / Device Role / Timing Role: Universal-configured isolated driver delivering synchronized gate signals with programmable dead time and robust CMTI >200 kV/µs. Use Value: Eliminates need for external gate resistors and bootstrap diodes, reducing BOM count and improving reliability in compact, thermally constrained OBC modules. |
| Uninterruptible Power Supplies | Industrial DC-DC Converters |
|
Use Scenario: Gate driving IGBTs in high-efficiency 3-phase UPS inverters operating at 16 kHz with tight THD requirements. IC Role / Device Role / Timing Role: Dual isolated driver with UVLO at 12 V and 1500 VRMS working voltage ensuring stable operation during grid sags and surges. Use Value: Maintains precise timing and output state integrity across wide input voltage range, improving waveform fidelity and battery backup duration. |
Use Scenario: Driving GaN FETs in isolated 48 V–12 V bidirectional DC-DC converters for server power distribution. IC Role / Device Role / Timing Role: High-CMTI isolated driver with SelVCD™ enabling fast, controlled turn-on/off transitions without oscillation or ringing. Use Value: Reduces switching losses by >15% vs. resistor-based drivers, increasing converter efficiency above 98% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS1R | Same Si82Fx family, but with Disable (DIS) instead of Enable (EN) control logic; identical pinout, isolation, and SelVCD™ capability. | Requires inverted safety signal polarity - DIS asserted high forces outputs low, whereas SI82F39BEC-IS1R requires EN asserted high. | Select when system safety architecture mandates active-high disable rather than active-high enable for fail-safe shutdown. |
| UCC5390SCDR | TI part with 5.7 kVRMS isolation, 100 kV/µs CMTI, and fixed 4-A peak output - lacks SelVCD™, Miller clamp, and dead time programming. | Requires external gate resistors and separate Miller clamp circuitry; no analog speed control or programmable dead time. | Choose only if cost sensitivity outweighs design flexibility - SI82F39BEC-IS1R reduces component count by 4–6 passive parts per channel. |
Compared with Si8239BD-IS1R, SI82F39BEC-IS1R offers identical performance but inverted safety control logic; versus UCC5390SCDR, it delivers superior noise immunity, integrated protection features, and BOM reduction - making it optimal for high-reliability SiC/GaN systems where layout space and thermal management are critical.
Availability
SI82F39BEC-IS1R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI82F39BEC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.
The Si82Fx product line was designed specifically for high-reliability isolated gate driving in next-generation power electronics - targeting SiC and GaN-based inverters, EV traction systems, and high-density power supplies demanding ultra-low skew and high CMTI.
FAQ
What is the isolation rating and safety certification status of SI82F39BEC-IS1R?
SI82F39BEC-IS1R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage and 10 kV bipolar surge rating meet requirements for reinforced insulation in industrial and automotive applications. SI82F39BEC-IS1R uses Skyworks' proprietary silicon dioxide capacitive isolation technology, not optocouplers.
Does SI82F39BEC-IS1R support both high-side and low-side gate driving in the same package?
Yes, SI82F39BEC-IS1R supports both high-side and low-side gate driving through its Universal configuration: VDDA/GNDA powers Channel A and VDDB/GNDB powers Channel B, with each output (VOA/VOB) fully isolated from logic and from each other. This eliminates bootstrap complexity and enables direct floating high-side drive - confirmed in Figures 2 and 6 of the preliminary datasheet for Si82F39x devices.
How does the SelVCD™ feature eliminate the need for external gate resistors in SI82F39BEC-IS1R?
SI82F39BEC-IS1R's SelVCD™ operates as a precision current source for both sourcing (SPD+) and sinking (SPD−), delivering eight selectable output current levels with ±10% tolerance over temperature and process. Because the output regulates current-not voltage-it maintains consistent gate charge/discharge rates regardless of gate voltage swing, removing reliance on external resistors for speed control or Miller clamping.
What is the function of the DT pin in SI82F39BEC-IS1R, and how is dead time programmed?
The DT pin in SI82F39BEC-IS1R programs dead time between VOA and VOB transitions using an external resistor (RDT) to GNDI. Dead time follows tDT = 1.73 × RDT + 5.74 ns (RDT = 10–110 kΩ). Connecting DT to VDDI disables dead time insertion entirely, allowing SI82F39BEC-IS1R to operate as a dual independent driver - a key differentiator from High-Side/Low-Side variants.
Is SI82F39BEC-IS1R qualified for automotive applications, and what does AEC-Q100 Grade 1 mean?
Yes, SI82F39BEC-IS1R is AEC-Q100 Grade 1 qualified, meaning it is manufactured using automotive-specific flows across wafer fabrication, assembly, and test to ensure robustness and low defectivity. Grade 1 specifies operation from –40 °C to +125 °C ambient, with extended reliability testing including HTOL, TC, and ESD - validated for use in EV traction inverters, battery management systems, and ADAS power stages.
SI82F39BEC-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F39BEC-IS1R FAQ
1.How can I place an order for SI82F39BEC-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F39BEC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F39BEC-IS1R reliable?
The price and inventory of SI82F39BEC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39BEC-IS1R is usually 5 days.
3.What payment methods are accepted for SI82F39BEC-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39BEC-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F39BEC-IS1R?
SI82F39BEC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F39BEC-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F39BEC-IS1R?
For technical support, including SI82F39BEC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39BEC-IS1R requirements.
6.How does Aetrix verify that SI82F39BEC-IS1R is sourced from the original manufacturer or authorized distributors?
All SI82F39BEC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39BEC-IS1R meets industry standards.
7.What is the process for return or replacement of SI82F39BEC-IS1R?
All SI82F39BEC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39BEC-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F39BEC-IS1R part is unused and in its original packaging.
Return procedure for SI82F39BEC-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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