Skyworks Solutions Inc. SI82F39BEE-IS3R
- Part No.:
- SI82F39BEE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F39BEE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED SELVCD G
- Quantity:
- Payment:

- Shipping:

Inventory:2,803
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI82F39BEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver with Universal configuration, CMOS inputs, and Selectable Variable Current Drive (SelVCD™) for driving SiC/GaN MOSFETs and IGBTs in half-bridge topologies. It supports 3–20 V input supply, 5–30 V gate supply, <5 ns channel-to-channel skew, 200 kV/µs CMTI, and integrated Miller clamp - deployed in onboard chargers and motor drives requiring reinforced isolation.
For engineers reviewing the SI82F39BEE-IS3R datasheet, SI82F39BEE-IS3R pinout, SI82F39BEE-IS3R application, or SI82F39BEE-IS3R equivalent, this page delivers verified functional identity, validated pin roles, confirmed safety-rated isolation specs (6 kVRMS), real-world dead time programmability, and two rigorously cross-checked alternative parts - all grounded in Skyworks' May 2024 preliminary datasheet.
Technical Context
The SI82F39BEE-IS3R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling precise timing control and fault-tolerant signal transfer between logic and power domains. Its dual independent outputs operate as high-precision current sources with ±10% output current tolerance over temperature and process variation when configured with 8 V, 12 V, or 15 V UVLO.
It features universal pinout supporting both non-inverting inputs (VIA/VIB) and enable-controlled operation (EN), with DT pin programmability for dead time insertion up to ~630 ns via external resistor. SPD+ and SPD− pins configure sourcing/sinking current across eight discrete levels without gate resistors, while the integrated Miller clamp activates below VMCTA/B during VOH→VOL transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - certified reinforced insulation per UL 1577, VDE 60747-17, CSA 62368-1. |
| Channel-to-Channel Skew | <5 ns - ensures synchronized switching in half-bridge circuits to prevent shoot-through. |
| CMTI | >200 kV/µs - maintains signal integrity in high-dV/dt environments like SiC/GaN inverters. |
| Input Supply Range | 3 V to 20 V - compatible with 3.3 V, 5 V, and 15 V logic controllers without level shifting. |
| Gate Supply Range | 5 V to 30 V - supports wide-range biasing of SiC FETs (15–20 V) and IGBTs (15 V). |
| UVLO Threshold | Configurable at 4 V / 8 V / 12 V / 15 V - prevents erroneous turn-on during brownout conditions. |
| Operating Temperature | –40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive powertrain and charging systems. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage-enhanced layout for reinforced isolation. Pin 1 marked; NC pins (12, 13) must remain unconnected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input A | Drives VOA high when asserted; enables independent control of upper/lower switch in universal mode. |
| VIB | Non-inverting logic input B | Drives VOB high when asserted; allows asymmetric PWM or phase-shifted control. |
| EN | Active-high enable | Unconditionally forces VOA/VOB low when deasserted - critical for safe shutdown sequences. |
| DT | Dead time programming | Resistor-to-GND sets dead time (10–110 kΩ → ~100–630 ns); tied to VDDI disables dead time for dual-driver use. |
| SPD+ | Sourcing current control | Selects one of eight turn-on current levels (0.5–10 A typical) - eliminates external gate resistors. |
| SPD− | Sinking current control | Selects one of eight turn-off current levels (0.5–10 A typical) - enables fast Miller discharge without Rg. |
| VOA / VOB | Isolated gate driver outputs | Current-source outputs with integrated Miller clamp - clamp engages below VMCTA/B (~1.5 V) during turn-off. |
| VDDI / GNDI | Logic-side supply | Isolated 3–20 V input domain powering CMOS inputs and isolation interface. |
| VDDA / GNDA / VDDB / GNDB | Power-side supplies | Independent 5–30 V rails for each output channel - supports split-bias or floating configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels per channel - replaces gate resistors and enables dynamic speed tuning. |
| Integrated Miller Clamp | Automatic activation below VMCTA/B during VOH→VOL transition - suppresses Miller-induced false turn-on in SiC/GaN switches. |
| Programmable Dead Time | Resistor-set delay (100–630 ns typical) between VOA/VOB edges - prevents shoot-through in half-bridge topologies. |
| High CMTI & Low Skew | 200 kV/µs common-mode transient immunity and <5 ns channel-to-channel skew - ensures robust operation in noisy power stages. |
| AEC-Q100 Qualified | Automotive-grade reliability with full manufacturing flow traceability - suitable for OBC, traction inverters, and ADAS power modules. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating at 100–200 kHz. IC Role / Device Role / Timing Role: Isolated dual gate driver providing independent control of high-side/low-side switches in interleaved totem-pole PFC and LLC resonant stages. Use Value: SelVCD™ enables optimized dV/dt control per phase; 6 kVRMS isolation meets reinforced insulation requirements for 1000 V battery systems. |
Use Scenario: Field-oriented control (FOC) of 3-phase PMSM/induction motors in HVAC compressors and servo drives. IC Role / Device Role / Timing Role: Universal-configured gate driver delivering matched propagation delay and skew across three half-bridge legs. Use Value: <5 ns skew ensures precise PWM edge alignment; AEC-Q100 qualification supports extended industrial lifecycle requirements. |
| Renewable Energy Inverter | Uninterruptible Power Supply (UPS) |
Use Scenario: Grid-tied solar inverters using SiC-based 3-level NPC or T-type topologies with active neutral-point clamping. IC Role / Device Role / Timing Role: Dual isolated driver per half-bridge leg, managing shoot-through prevention and Miller immunity under rapid voltage transients. Use Value: 200 kV/µs CMTI withstands >5 kV/µs grid fault transients; SPD± programming tailors switching loss vs. EMI trade-offs per operating condition. |
Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter/rectifier stages handling 480 VAC input and battery backup. IC Role / Device Role / Timing Role: High-side/low-side gate driver with programmable dead time ensuring safe commutation during line/battery switchover. Use Value: UVLO thresholds configurable to match IGBT gate drive requirements (15 V); 1500 VRMS working voltage supports 600 VAC system design margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3R | Same Si82Fx family, but with Disable (DIS) input instead of Enable (EN); identical pinout, isolation, and SelVCD™ capability. | Preferred where system-level safety requires active-low disable assertion (e.g., ISO 26262 ASIL-B fault handling). | Select Si8239BD-IS3R only if DIS functionality aligns with controller architecture - EN and DIS are not interchangeable. |
| UCC5390SCD | TI part with 5.7 kVRMS isolation, 100 kV/µs CMTI, single-input PWM mode only; no SPD± analog programming or universal VIA/VIB option. | Limited to synchronous half-bridge control; lacks independent input flexibility and fine-grained current tuning of SI82F39BEE-IS3R. | Choose UCC5390SCD for cost-sensitive, PWM-only designs where SelVCD™ and dual-input operation are unnecessary. |
Compared with SI82F39BEE-IS3R, Si8239BD-IS3R offers identical performance with inverted control polarity, while UCC5390SCD trades configurability for lower BOM count in fixed-topology systems - making SI82F39BEE-IS3R optimal for adaptive, high-reliability SiC/GaN power stages.
Availability
SI82F39BEE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor drives, renewable energy inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant isolation performance.
Supply support for SI82F39BEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si82Fx family was designed specifically for high-reliability isolated gate driving in next-generation power electronics - targeting SiC/GaN adoption in automotive, industrial, and energy infrastructure applications with reinforced safety certification and programmable drive strength.
FAQ
What is the isolation rating and safety certification status of the SI82F39BEE-IS3R?
The SI82F39BEE-IS3R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage and 10 kV bipolar surge rating meet reinforced insulation requirements for 1000 V DC systems. All certifications apply directly to the SI82F39BEE-IS3R device as specified in Skyworks' May 2024 preliminary datasheet.
Does the SI82F39BEE-IS3R support both high-side/low-side and dual independent configurations?
Yes - the SI82F39BEE-IS3R uses a Universal pinout with VIA and VIB inputs, allowing it to operate as either a high-side/low-side driver (with DT pin enabled) or dual independent drivers (with DT tied to VDDI). Unlike Si82F89/Si82F99 variants, SI82F39BEE-IS3R does not use PWM-only input logic, preserving full asymmetrical control flexibility for complex modulation schemes.
How does the SelVCD™ technology in the SI82F39BEE-IS3R eliminate the need for external gate resistors?
SelVCD™ configures VOA and VOB as precision current sources across eight discrete sourcing (SPD+) and sinking (SPD−) levels. Because output current is actively regulated - not voltage-limited - the driver directly controls dV/dt without series resistance. This also enables the integrated Miller clamp to function effectively, as no voltage drop occurs across an external resistor during turn-off transitions.
What is the function of the EN pin on the SI82F39BEE-IS3R, and how does it differ from DIS?
The EN pin on the SI82F39BEE-IS3R is an active-high enable that forces VOA and VOB low when deasserted (logic low), terminating operation within tDID. It differs from DIS (used in Si82F29/Si82F89 variants) in polarity and control philosophy: EN asserts normal operation, while DIS asserts shutdown. SI82F39BEE-IS3R does not include a DIS pin - only EN - and its truth table defines behavior exclusively around EN assertion.
Can the SI82F39BEE-IS3R drive both SiC MOSFETs and IGBTs reliably?
Yes - the SI82F39BEE-IS3R is explicitly characterized for SiC FETs, GaN HEMTs, and IGBTs. Its 5–30 V gate supply range supports 15–20 V SiC turn-on and 15 V IGBT gate bias; its 200 kV/µs CMTI withstands fast SiC switching transients; and its integrated Miller clamp prevents false turn-on in all three device types. Skyworks confirms this capability across the Si82Fx family in Section 1 of the preliminary datasheet.
SI82F39BEE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F39BEE-IS3R FAQ
1.How can I place an order for SI82F39BEE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F39BEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F39BEE-IS3R reliable?
The price and inventory of SI82F39BEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39BEE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82F39BEE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39BEE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F39BEE-IS3R?
SI82F39BEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F39BEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F39BEE-IS3R?
For technical support, including SI82F39BEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39BEE-IS3R requirements.
6.How does Aetrix verify that SI82F39BEE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82F39BEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39BEE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82F39BEE-IS3R?
All SI82F39BEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39BEE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F39BEE-IS3R part is unused and in its original packaging.
Return procedure for SI82F39BEE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI82F39BEE-IS3R Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
