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Skyworks Solutions Inc. SI82F39ECC-IS1R
- Part No.:
- SI82F39ECC-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F39ECC-IS1R.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED SELVC
- Quantity:
- Payment:
- Shipping:
Inventory:3,875
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Product details
Overview
SI82F39ECC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver with Universal configuration, CMOS inputs, and Selectable Variable Current Drive (SelVCD™) for driving SiC/GaN MOSFETs and IGBTs in half-bridge topologies. It supports 3–20 V input supply, 5–30 V gate supply, <5 ns channel-to-channel skew, 200 kV/µs CMTI, and integrated Miller clamp.
For engineers reviewing the SI82F39ECC-IS1R datasheet, SI82F39ECC-IS1R pinout, SI82F39ECC-IS1R application, or SI82F39ECC-IS1R equivalent, this page delivers verified specifications, functional pin mapping, real-world use cases in motor drives and inverters, and validated alternative options - all grounded in Skyworks' preliminary datasheet Rev. 206821A (May 20, 2024).
Technical Context
The SI82F39ECC-IS1R implements capacitive isolation using dual silicon dioxide (SiO₂) barriers, enabling 6 kVRMS reinforced insulation and high noise immunity. Its Universal configuration accepts independent non-inverting inputs (VIA, VIB) and supports dead time programmability via external resistor on DT pin.
SelVCD™ provides eight-level sourcing/sinking current control via SPD+ and SPD− pins, eliminating external gate resistors while enabling precise Miller clamping during switching transitions. UVLO thresholds are fixed at 8 V per channel, and outputs remain defined under all fault conditions including power sequencing mismatches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 6 kVRMS for 1 minute; enables reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel Skew | <5 ns; ensures precise timing alignment between VOA and VOB for shoot-through prevention in half-bridge circuits. |
| CMTI | >200 kV/µs; maintains signal integrity in high-dV/dt environments like SiC/GaN-based inverters. |
| Input Supply Range | 3–20 V; compatible with standard logic interfaces and industrial control voltages without level-shifting. |
| Gate Supply Range | 5–30 V; supports wide-range biasing of SiC FETs (15–20 V) and IGBTs (15 V) from single rail. |
| UVLO Threshold | 8 V (VDDI, VDDA, VDDB); prevents erratic switching during brown-out or startup by holding outputs low until stable. |
| Operating Temp | –40 to +125 °C; qualified to AEC-Q100 Grade 1 for automotive-grade reliability in under-hood applications. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with creepage-optimized layout for reinforced isolation. Pin 1 = VIA; Pin 16 = VDDI; Pins 12 & 13 = NC (no connection). All pins electrically validated per Figure 2 (Si82F39x Pinout) in Skyworks Preliminary Datasheet 206821A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input A | Drives VOA high when asserted; enables independent control of high-side or low-side switch in Universal mode. |
| VIB | Non-inverting logic input B | Drives VOB high when asserted; allows asynchronous dual-channel operation without PWM synchronization. |
| EN | Active-high enable | Unconditionally forces VOA/VOB low when deasserted; used for system-level fault shutdown with tEID < 100 ns recovery. |
| DT | Dead time programming | Resistor-to-GND sets dead time (1.73×RDT + 5.74 ns); connect to VDDI to disable dead time and overlap protection. |
| SPD+ | Sourcing current control | Selects one of eight turn-on current levels (0.5–6 A typical); eliminates gate resistor and enables dynamic speed control. |
| SPD− | Sinking current control | Selects one of eight turn-off current levels (0.5–6 A typical); activates Miller clamp when VOA/B falls below VMCTA/B. |
| VDDA / GNDA | Driver A power & ground | Independent 5–30 V supply domain for high-side or low-side output stage; supports split-rail gate biasing. |
| VDDB / GNDB | Driver B power & ground | Independent 5–30 V supply domain; enables asymmetric gate drive voltages for SiC/GaN optimization. |
| VOA / VOB | Output terminals | Current-source outputs with built-in Miller clamp; require direct connection to power switch gate-no series resistor. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels (0.5–6 A), adjustable via SPD± resistors or voltage sources, enabling optimized switching loss vs. EMI trade-offs. |
| Integrated Miller Clamp | Automatically engages during VOH→VOL transition when VOA/B < VMCTA/B, suppressing Miller-induced false turn-on without external components. |
| Programmable Dead Time | Configurable 0–200 ns dead time via single resistor on DT pin; prevents shoot-through in half-bridge configurations with overlap protection. |
| Defined Output States | No floating or undefined outputs under any condition-including UVLO, power sequencing faults, or EN/DIS assertion-ensuring fail-safe behavior. |
| AEC-Q100 Qualified | Grade 1 (–40 to +125 °C) qualification with automotive-specific manufacturing flow, supporting onboard chargers and traction inverters. |
Applications
| Motor Drives | Power Inverters |
|---|---|
Use Scenario: Three-phase BLDC or PMSM motor control in HVAC compressors and industrial servo systems. IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, skew-controlled drive to high-side and low-side switches in each half-bridge leg. Use Value: <5 ns skew and 200 kV/µs CMTI prevent timing-induced shoot-through and ensure robust commutation under noisy EMI conditions. |
Use Scenario: Grid-tied solar inverters and UPS systems requiring bidirectional energy flow and fast transient response. IC Role / Device Role / Timing Role: Isolated gate driver enabling SiC MOSFET switching at >100 kHz with precise dead time control and Miller clamping. Use Value: SelVCD™ eliminates gate resistors and reduces gate loop inductance, improving switching efficiency and thermal margin in high-frequency designs. |
| Onboard Chargers | Isolated DC-DC Converters |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV onboard chargers (OBC) with 800 V battery architectures. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver for active clamp flyback and dual-active-bridge topologies operating up to 125 °C ambient. Use Value: AEC-Q100 Grade 1 qualification and 6 kVRMS isolation meet automotive safety requirements while enabling compact, high-power-density OBC designs. |
Use Scenario: High-efficiency isolated DC-DC modules in telecom rectifiers and server PSUs using GaN HEMTs. IC Role / Device Role / Timing Role: Universal-configured gate driver delivering matched turn-on/turn-off timing across primary and secondary side switches. Use Value: Independent VDDA/VDDB supplies allow optimal gate biasing (e.g., 12 V for GaN turn-on, –3 V for turn-off), reducing conduction loss and improving reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SIL1225ED-IM | Single-input, high-side/low-side configuration only; no VIA/VIB universal mode; fixed 4 A sourcing/sinking; no SPD± programmability. | Better suited for cost-sensitive, fixed-topology half-bridges where independent input control is unnecessary. | Choose SIL1225ED-IM if design uses synchronous PWM and requires lower BOM count, but cannot support dynamic current adjustment or Miller clamp tuning. |
| UCC5390SCD | 3.3–15 V input range (narrower); 5–33 V gate supply; 100 kV/µs CMTI (lower); no integrated Miller clamp; external gate resistors required. | Targeted at industrial motor drives with legacy IGBTs where ultra-high CMTI and SiC/GaN optimization are not critical. | Choose UCC5390SCD if existing layout uses gate resistors and system-level EMI filtering compensates for lower CMTI, but avoid for new SiC/GaN designs requiring Miller suppression. |
Compared with SIL1225ED-IM and UCC5390SCD, SI82F39ECC-IS1R uniquely combines Universal input flexibility, eight-level SelVCD™, and integrated Miller clamp-enabling higher efficiency, smaller gate loops, and simplified layout in next-generation wide-bandgap power converters.
Availability
SI82F39ECC-IS1R is available at Aetrix Electronics and suitable for motor drives, power inverters, onboard chargers, and isolated DC-DC converters requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.
Supply support for SI82F39ECC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-reliability applications.
The Si82Fx family was designed specifically for isolated gate driving in wide-bandgap power systems, emphasizing timing precision, noise immunity, and integration of Miller clamping and variable current drive to replace discrete resistor-based solutions.
FAQ
What is the isolation rating and safety certification status of SI82F39ECC-IS1R?
SI82F39ECC-IS1R provides 6 kVRMS reinforced isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 and 60601-1 (2 MOPP), VDE 60747-17, and CQC GB4943.1 certifications. The isolation barrier uses dual SiO₂ capacitors and supports 1500 VRMS working voltage and 10 kV bipolar surge tolerance, making it suitable for high-voltage industrial and automotive systems where safety-critical isolation is mandatory. SI82F39ECC-IS1R meets these requirements as specified in Skyworks Preliminary Datasheet 206821A.
Does SI82F39ECC-IS1R support both high-side/low-side and independent dual-channel configurations?
Yes, SI82F39ECC-IS1R uses the Universal configuration with VIA and VIB inputs, enabling true independent dual-channel operation - unlike high-side/low-side-only variants (e.g., Si82F99x). This allows asynchronous control of two separate switches, such as in three-phase inverter topologies or dual-output DC-DC converters. The DT pin can be tied to VDDI to disable dead time and overlap protection, confirming its flexible dual-driver capability as documented in Figure 2 and Section 1.1.1 of the SI82F39ECC-IS1R datasheet.
How does the SelVCD™ technology in SI82F39ECC-IS1R eliminate the need for external gate resistors?
SI82F39ECC-IS1R's SelVCD™ operates as a tightly regulated current source - not a voltage source - with eight selectable sourcing/sinking levels (0.5–6 A typical) set via SPD+ and SPD− pins. Because output current remains stable across temperature, process variation, and supply voltage (5–30 V), external gate resistors become redundant for controlling dV/dt or switching speed. Furthermore, the integrated Miller clamp engages automatically during turn-off, removing the need for separate Miller clamp circuits. SI82F39ECC-IS1R achieves this without sacrificing thermal performance, as confirmed in Section 4.6 and Figure 15–17 of the datasheet.
What is the function of the EN pin on SI82F39ECC-IS1R, and how does it differ from DIS?
The EN pin on SI82F39ECC-IS1R is an active-high enable signal: when logic high, the device operates normally; when logic low, it unconditionally forces VOA and VOB low within tDID delay (<100 ns), regardless of input states or power supply conditions. Unlike DIS (used in Si82F29x/Si82F89x variants), EN provides positive-enable control ideal for system-level fault handling. This behavior is explicitly defined in Table 1 (Pin Details) and Truth Table 2 of the SI82F39ECC-IS1R datasheet, and applies only to EN-equipped variants like SI82F39ECC-IS1R.
Is SI82F39ECC-IS1R qualified for automotive applications, and what does AEC-Q100 Grade 1 mean for its use?
Yes, SI82F39ECC-IS1R is AEC-Q100 Grade 1 qualified, meaning it is tested and manufactured under automotive-specific flows across wafer fabrication, assembly, and test - ensuring low defectivity and robustness for under-hood environments. Grade 1 specifies operation from –40 to +125 °C junction temperature, supporting applications like EV onboard chargers and traction inverters where thermal stress and long-term reliability are critical. This qualification is explicitly stated in the Key Features list and Section 2 of the SI82F39ECC-IS1R preliminary datasheet.
SI82F39ECC-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F39ECC-IS1R FAQ
1.How can I place an order for SI82F39ECC-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F39ECC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F39ECC-IS1R reliable?
The price and inventory of SI82F39ECC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F39ECC-IS1R is usually 5 days.
3.What payment methods are accepted for SI82F39ECC-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F39ECC-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F39ECC-IS1R?
SI82F39ECC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F39ECC-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F39ECC-IS1R?
For technical support, including SI82F39ECC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F39ECC-IS1R requirements.
6.How does Aetrix verify that SI82F39ECC-IS1R is sourced from the original manufacturer or authorized distributors?
All SI82F39ECC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F39ECC-IS1R meets industry standards.
7.What is the process for return or replacement of SI82F39ECC-IS1R?
All SI82F39ECC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F39ECC-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F39ECC-IS1R part is unused and in its original packaging.
Return procedure for SI82F39ECC-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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