Skyworks Solutions Inc. SI82F89AEC-IS1R

Overview

SI82F89AEC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with disable (DIS) input, 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, and Selectable Variable Current Drive (SelVCD™) supporting eight sourcing/sinking current levels. It drives SiC/GaN FETs and IGBTs in half-bridge motor inverters and onboard chargers.

For engineers reviewing the SI82F89AEC-IS1R datasheet, SI82F89AEC-IS1R pinout, SI82F89AEC-IS1R application, or SI82F89AEC-IS1R equivalent, this page delivers verified functional identity, validated pin roles, confirmed isolation and timing specs, real-world application context, and two rigorously cross-checked alternative parts for half-bridge gate drive systems requiring AEC-Q100 qualification and Miller clamp functionality.

Technical Context

The SI82F89AEC-IS1R implements capacitive silicon-dioxide isolation with differential RF-modulated OOK signaling, enabling 200 kV/μs CMTI and stable timing across temperature. Its High-Side/Low-Side topology uses a single PWM input to control complementary outputs with programmable dead time via external resistor on DT pin.

It integrates SelVCD™ current-source outputs with dynamic Miller clamping triggered at VMCTA/B threshold, eliminating external gate resistors. UVLO thresholds are fixed at 4 V, 8 V, 12 V, or 15 V per variant - SI82F89AEC-IS1R uses 12 V UVLO on VDDA/VDDB and 4 V on VDDI.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC package (7.5 mm × 10.3 mm, 1.27 mm pitch) with creepage ≥8.3 mm and clearance ≥8.0 mm - optimized for high-voltage spacing in compact half-bridge layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated high-side/low-side gate drive applications.

Compared with SI82F89AEC-IS1R, Si8239BD-IS1R offers input flexibility but requires additional logic for half-bridge use, while UCC5390SCDWR provides lower isolation rating and no current-source drive - making SI82F89AEC-IS1R uniquely suited for SiC/GaN systems demanding integrated Miller clamping and resistorless gate control.

Availability

SI82F89AEC-IS1R is available at Aetrix Electronics and suitable for onboard chargers, industrial motor inverters, and renewable energy inverters requiring stable component supply, AEC-Q100 compliance, and reinforced 6 kVRMS isolation.

Supply support for SI82F89AEC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and communications markets.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in next-generation power converters using wide-bandgap semiconductors - emphasizing low skew, programmable drive strength, and integrated protection features like Miller clamping.

FAQ

What is the isolation rating and safety certification status of SI82F89AEC-IS1R?

SI82F89AEC-IS1R provides 6 kVRMS reinforced isolation rated for 1 minute per UL 1577, with pending certifications to VDE 60747-17, CSA 62368-1, and GB4943.1. It achieves 1500 VRMS working voltage and 10 kV bipolar surge capability, meeting requirements for automotive and industrial power systems where galvanic separation is critical for operator safety and system robustness. The isolation barrier uses dual silicon-dioxide capacitors for fault tolerance.

How does the SelVCD™ technology in SI82F89AEC-IS1R eliminate the need for external gate resistors?

SI82F89AEC-IS1R implements SelVCD™ as a precision current-source output stage, where SPD+ and SPD− pins configure eight discrete sourcing and sinking current levels (0.5–10 A). Because the output behaves as a regulated current source - not a voltage source - it directly controls dV/dt without dissipating power in external resistors. This also enables the integrated Miller clamp to function through VOA/VOB pins, suppressing parasitic turn-on in SiC/GaN FETs without added components.

What is the function of the DT pin on SI82F89AEC-IS1R, and how is dead time programmed?

The DT pin on SI82F89AEC-IS1R programs dead time between VOA and VOB transitions using an external resistor (10–110 kΩ) connected to GNDI. Typical dead time ranges from ~20 ns to ~120 ns per Equation 1 (t_DT = 1.73 × R_DT + 5.74). Connecting DT to VDDI disables dead time insertion and overlap protection, allowing SI82F89AEC-IS1R to operate as a dual independent driver. A 0.1 µF capacitor in parallel improves noise immunity.

Does SI82F89AEC-IS1R support both SiC and GaN power devices, and what design features enable this?

Yes, SI82F89AEC-IS1R supports both SiC MOSFETs and GaN HEMTs through its 5–30 V gate drive supply range, 200 kV/μs CMTI, <5 ns channel skew, and integrated Miller clamp activated at VMCTA/B (~2 V). Its SelVCD™ current-source outputs deliver controlled dV/dt without gate resistors, while the 12 V UVLO on VDDA/VDDB ensures reliable turn-on for SiC devices requiring higher gate bias, and the 4 V VDDI UVLO prevents logic-level misfiring during MCU brown-out.

What is the role of the DIS pin on SI82F89AEC-IS1R, and how does it differ from EN in other Si82Fx variants?

The DIS (disable) pin on SI82F89AEC-IS1R is an active-high signal that unconditionally forces VOA and VOB low regardless of PWM state or supply conditions - used for fast fault shutdown in OBC or inverter systems. Unlike EN (enable) variants such as SI82F99x, DIS asserts shutdown immediately upon logic high, with termination within t_DID and recovery within t_EID. DIS has no effect if VDDI is in UVLO (<4 V), ensuring fail-safe behavior during power loss.