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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82F99ABC-IS1R

Name: SI82F99ABC-IS1R
Brand: Skyworks Solutions Inc.
SKU: SI82F99ABC-IS1R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82F99ABC-IS1R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82F99ABC-IS1R.pdf

Description:: 3.75 KV 2-CHANNEL ISOLATED SELVC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI82F99ABC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, 6 kVRMS reinforced isolation, SelVCD™ current-source outputs (8-level programmable sourcing/sinking), integrated Miller clamp, and <5 ns channel-to-channel skew. It drives SiC/GaN FETs and IGBTs in half-bridge topologies for onboard chargers and motor inverters.

For engineers reviewing the SI82F99ABC-IS1R datasheet, SI82F99ABC-IS1R pinout, SI82F99ABC-IS1R application, or SI82F99ABC-IS1R equivalent, key selection criteria include its 3–20 V logic supply range, 5–30 V gate supply capability, programmable dead time via external resistor, ±10% output current regulation over temperature, and AEC-Q100 qualification for automotive power systems.

Technical Context

The SI82F99ABC-IS1R implements silicon-dioxide capacitive isolation with differential RF-modulated OOK signaling, enabling 200 kV/µs CMTI and stable timing across temperature and lifetime. Its High-Side/Low-Side architecture uses a single PWM input to drive complementary outputs with user-programmable dead time via the DT pin.

It integrates UVLO thresholds at 4 V, 8 V, 12 V, or 15 V per channel, independent GNDA/VDDB and GNDA/VDDB supplies, and Schmitt-triggered CMOS inputs with optional deglitch filtering. The SelVCD™ circuit operates as a precision current source-sourcing and sinking currents are set independently via SPD+ and SPD− pins using resistor or voltage control.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Voltage	6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements.
Channel Skew	<5 ns - ensures precise timing alignment between high-side and low-side gate drive signals in half-bridge switching.
Logic Supply Range	3 V to 20 V - supports direct interface with MCU GPIOs, DSPs, and FPGA I/O without level-shifting.
Gate Supply Range	5 V to 30 V - enables direct drive of SiC FETs requiring >20 V gate bias and IGBTs with 15 V turn-on.
CMTI	>200 kV/µs - prevents false triggering in high-dV/dt environments like motor drives and fast-switching inverters.
Output Current Control	8-level SelVCD™ - eliminates external gate resistors and enables dynamic turn-on/turn-off speed tuning via SPD± pins.
Working Voltage	1500 VRMS - defines continuous operational isolation barrier rating under steady-state conditions.
Temperature Range	–40 °C to +125 °C - qualified for under-hood automotive and industrial ambient environments.

Pinout & Package

Narrow-body 16-pin SOIC package (SOIC-16 NB) with 1.27 mm pitch and creepage ≥8.3 mm. Pin 1 marked by dot; pins 12 and 13 are NC (no connection).

Pin/Terminal	Circuit Role	Design Meaning
VIA	Non-inverting logic input for gate driver A	Unused in SI82F99ABC-IS1R - this variant uses PWM input mode, not independent VIA/VIB control.
PWM	Single logic input controlling both channels	Drives VOA high / VOB low when high; VOA low / VOB high when low - core half-bridge control signal.
EN	Active-high enable input	When low, forces VOA and VOB low unconditionally - used for system-level fault shutdown or soft-start sequencing.
DT	Dead time programming input	Resistor-to-GND sets dead time (10–110 kΩ → ~10–110 ns); tied to VDDI disables dead time for dual-driver operation.
SPD+	Sourcing current programming input	Resistor or voltage sets one of eight turn-on current levels - directly controls MOSFET/SiC FET gate charge rate.
SPD−	Sinking current programming input	Resistor or voltage sets one of eight turn-off current levels - enables independent optimization of switching losses and EMI.
VDDA / GNDA	High-side gate driver supply and ground	Independent 5–30 V supply domain - isolates high-side gate loop from low-side and logic domains.
VDDB / GNDB	Low-side gate driver supply and ground	Independent 5–30 V supply domain - allows asymmetric gate drive voltages (e.g., +20 V / –5 V).
VDDI / GNDI	Logic input supply and ground	3–20 V domain powers isolated input receiver and internal logic - galvanically separated from gate supplies.
VOA / VOB	High-side and low-side gate driver outputs	Current-source outputs with integrated Miller clamp - connect directly to power switch gates without series resistors.
SPD−	Sinking current programming input	Resistor or voltage sets one of eight turn-off current levels - enables independent optimization of switching losses and EMI.

Key Features

Feature	Design Value
Selectable Variable Current Drive (SelVCD™)	Eight discrete sourcing/sinking current levels set via SPD± pins - replaces gate resistors and enables real-time switching loss tuning.
Integrated Miller Clamp	Automatically engages during VOH→VOL transition below VMCTA/B threshold - suppresses Miller-induced shoot-through without external components.
Programmable Dead Time	Resistor-controlled DT pin sets inter-channel delay (10–110 ns typical) - prevents cross-conduction in half-bridge power stages.
AEC-Q100 Qualified	Grade 1 (–40 °C to +125 °C) qualification - validated for automotive traction inverters, OBCs, and DC-DC converters.
UVLO with Multiple Thresholds	Configurable 4 V / 8 V / 12 V / 15 V UVLO per channel - ensures safe gate drive only when gate and logic supplies meet minimum operating margins.
High CMTI & Low Skew	200 kV/µs common-mode transient immunity and <5 ns channel-to-channel skew - maintains signal integrity in noisy high-power systems.

Applications

Onboard Charger (OBC)	Motor Inverter
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC-based totem-pole PFC and isolated DC-DC stages. IC Role / Device Role / Timing Role: High-Side/Low-Side gate driver for half-bridge SiC FETs in primary-side LLC resonant converter and secondary-side synchronous rectification. Use Value: SelVCD™ enables optimized dV/dt control to reduce EMI in compact OBC designs; 6 kVRMS isolation satisfies reinforced insulation requirements for 1000 V battery systems.	Use Scenario: Traction inverter driving permanent magnet synchronous motors (PMSM) in hybrid/electric vehicles. IC Role / Device Role / Timing Role: Isolated gate driver for high-frequency (20–50 kHz) SiC half-bridges with precise dead time insertion to prevent shoot-through during torque transients. Use Value: <5 ns skew ensures balanced phase-leg timing; AEC-Q100 Grade 1 qualification guarantees reliability under vibration, thermal cycling, and high humidity.
Industrial UPS	Grid-Tied Solar Inverter
Use Scenario: Double-conversion online UPS with IGBT-based three-phase inverter stage delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Dual isolated driver for IGBT half-bridges with UVLO monitoring on each gate supply to detect driver rail faults before hard switching. Use Value: 30 V max gate supply supports 15 V IGBT gate bias with margin; integrated Miller clamp prevents false turn-on during bus transients in high-power backup systems.	Use Scenario: Transformerless string inverters using SiC MOSFETs in H-bridge and NPC topologies for 1000 V DC input and 230/400 V AC output. IC Role / Device Role / Timing Role: High-reliability isolated driver for bidirectional half-bridge switches with programmable dead time to accommodate varying modulation schemes (SVPWM, DPWM). Use Value: 200 kV/µs CMTI withstands fast grid fault transients; 1500 VRMS working voltage meets IEC 62109 and UL 1741 safety standards for PV systems.

Onboard Charger (OBC)

Motor Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC-based totem-pole PFC and isolated DC-DC stages.

IC Role / Device Role / Timing Role: High-Side/Low-Side gate driver for half-bridge SiC FETs in primary-side LLC resonant converter and secondary-side synchronous rectification.

Use Value: SelVCD™ enables optimized dV/dt control to reduce EMI in compact OBC designs; 6 kVRMS isolation satisfies reinforced insulation requirements for 1000 V battery systems.

Use Scenario: Traction inverter driving permanent magnet synchronous motors (PMSM) in hybrid/electric vehicles.

IC Role / Device Role / Timing Role: Isolated gate driver for high-frequency (20–50 kHz) SiC half-bridges with precise dead time insertion to prevent shoot-through during torque transients.

Use Value: <5 ns skew ensures balanced phase-leg timing; AEC-Q100 Grade 1 qualification guarantees reliability under vibration, thermal cycling, and high humidity.

Industrial UPS

Grid-Tied Solar Inverter

Use Scenario: Double-conversion online UPS with IGBT-based three-phase inverter stage delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: Dual isolated driver for IGBT half-bridges with UVLO monitoring on each gate supply to detect driver rail faults before hard switching.

Use Value: 30 V max gate supply supports 15 V IGBT gate bias with margin; integrated Miller clamp prevents false turn-on during bus transients in high-power backup systems.

Use Scenario: Transformerless string inverters using SiC MOSFETs in H-bridge and NPC topologies for 1000 V DC input and 230/400 V AC output.

IC Role / Device Role / Timing Role: High-reliability isolated driver for bidirectional half-bridge switches with programmable dead time to accommodate varying modulation schemes (SVPWM, DPWM).

Use Value: 200 kV/µs CMTI withstands fast grid fault transients; 1500 VRMS working voltage meets IEC 62109 and UL 1741 safety standards for PV systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8239x-AB-IS1R	Universal configuration (independent VIA/VIB inputs), no PWM mode; same isolation, SelVCD™, and package.	Used where independent high-side/low-side control is required (e.g., phase-shifted full-bridge), not half-bridge PWM.	Select SI82F99ABC-IS1R for PWM-driven half-bridge; choose Si8239x-AB-IS1R when separate logic inputs are needed for asymmetrical drive.
UCC5870QDWJRQ1	Texas Instruments part with 5.7 kVRMS isolation, 100 V/ns CMTI, fixed 4-A peak output, no SelVCD™ or Miller clamp.	Requires external gate resistors and Miller clamping circuits; lacks programmable current drive and integrated protection.	SI82F99ABC-IS1R offers superior EMI control and layout simplicity via SelVCD™ and built-in Miller clamp - preferred for SiC/GaN designs targeting high efficiency.

Compared with Si8239x-AB-IS1R, SI82F99ABC-IS1R provides dedicated PWM input and dead-time control for half-bridge optimization, while UCC5870QDWJRQ1 lacks current-source drive and requires additional components to match SI82F99ABC-IS1R's integrated functionality.

Availability

SI82F99ABC-IS1R is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial motor drives, uninterruptible power supplies, and grid-tied solar inverters requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant isolation performance.

Supply support for SI82F99ABC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in next-generation power electronics using wide-bandgap semiconductors, emphasizing robustness, programmability, and automotive-grade qualification.

FAQ

What is the isolation rating and safety certification status of SI82F99ABC-IS1R?

SI82F99ABC-IS1R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage supports continuous operation in 1000 V-class systems. All certifications apply directly to the SI82F99ABC-IS1R device as specified in Skyworks' preliminary datasheet 206821A.

Does SI82F99ABC-IS1R support independent high-side and low-side control, or only PWM mode?

SI82F99ABC-IS1R is configured exclusively for PWM input mode - it accepts a single PWM signal on the PWM pin and generates complementary high-side (VOA) and low-side (VOB) outputs. It does not support independent VIA/VIB control; that functionality is reserved for Si82F29x/Si82F39x variants. The SI82F99ABC-IS1R pinout and truth table confirm PWM-only operation.

How is dead time programmed on SI82F99ABC-IS1R, and what is the adjustment range?

Dead time on SI82F99ABC-IS1R is set by connecting an external resistor (R_DT) between the DT pin and GNDI. R_DT values from 10 kΩ to 110 kΩ yield typical dead times of ~10 ns to ~110 ns, calculated as t_DT = 1.73 × R_DT + 5.74 (ns). Connecting DT to VDDI disables dead time insertion entirely, reconfiguring SI82F99ABC-IS1R as a dual non-overlapping driver.

What UVLO thresholds are implemented in SI82F99ABC-IS1R, and how are they selected?

SI82F99ABC-IS1R offers factory-configured UVLO thresholds of 4 V, 8 V, 12 V, or 15 V on both VDDI and gate supplies (VDDA/VDDB). The specific threshold is fixed per orderable part number and cannot be adjusted externally. The SI82F99ABC-IS1R variant uses 8 V UVLO, as confirmed in Skyworks' ordering guide and electrical characteristics tables in datasheet 206821A.

Can SI82F99ABC-IS1R drive GaN FETs directly without external gate resistors?

Yes - SI82F99ABC-IS1R's SelVCD™ current-source outputs and integrated Miller clamp allow direct connection to GaN FET gates. Its eight-level programmable sourcing/sinking current eliminates the need for external gate resistors, and the Miller clamp engages automatically during turn-off to suppress parasitic turn-on. This capability is explicitly validated in Skyworks' application notes for GaN half-bridge drivers.

SI82F99ABC-IS1R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82F99ABC-IS1R FAQ

1.How can I place an order for SI82F99ABC-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99ABC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99ABC-IS1R reliable?

The price and inventory of SI82F99ABC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99ABC-IS1R is usually 5 days.

3.What payment methods are accepted for SI82F99ABC-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99ABC-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99ABC-IS1R?

SI82F99ABC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99ABC-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99ABC-IS1R?

For technical support, including SI82F99ABC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99ABC-IS1R requirements.

6.How does Aetrix verify that SI82F99ABC-IS1R is sourced from the original manufacturer or authorized distributors?

All SI82F99ABC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99ABC-IS1R meets industry standards.

7.What is the process for return or replacement of SI82F99ABC-IS1R?

All SI82F99ABC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99ABC-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99ABC-IS1R part is unused and in its original packaging.

Return procedure for SI82F99ABC-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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