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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82F99ACE-IS3R

Name: SI82F99ACE-IS3R
Brand: Skyworks Solutions Inc.
SKU: SI82F99ACE-IS3R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82F99ACE-IS3R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82F99ACE-IS3R.pdf

Description:: 6 KV 2-CHANNEL ISOLATED SELVCD G

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Product details

Overview

SI82F99ACE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, and Selectable Variable Current Drive (SelVCD™) supporting eight sourcing/sinking current levels. It drives SiC/GaN FETs and IGBTs in half-bridge power stages of onboard chargers and motor inverters.

For engineers reviewing the SI82F99ACE-IS3R datasheet, SI82F99ACE-IS3R pinout, SI82F99ACE-IS3R application, or SI82F99ACE-IS3R equivalent, this page delivers verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed SelVCD™ current source behavior, exact UVLO thresholds (15 V), and two field-validated alternative parts for high-reliability power conversion designs.

Technical Context

The SI82F99ACE-IS3R implements digital capacitive isolation using dual silicon dioxide (SiO₂) capacitors with RF OOK modulation, enabling 200 kV/μs CMTI and stable timing across temperature. Its High-Side/Low-Side topology uses a single PWM input to control complementary outputs with programmable dead time via external resistor on DT pin.

It integrates a Miller clamp that activates when VOA/VOB falls below VMCTA/B (typ. 1.9 V), forcing SPD– to maximum level (SPD7–) for rapid turn-off. Output current regulation maintains ±10% tolerance over temperature and process variation due to its precision current-source architecture and 15 V UVLO setting.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Voltage	6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements.
Channel Skew	<5 ns - ensures precise timing alignment between high-side and low-side gate drive signals in half-bridge topologies.
Input Supply Range	3 V to 20 V - supports direct interface with 3.3 V, 5 V, and 15 V logic controllers without level shifting.
Gate Supply Range	5 V to 30 V - enables direct driving of SiC FETs requiring >20 V gate bias and IGBTs with 15 V gate drive.
UVLO Threshold	15 V (VDDA/B) - prevents erroneous switching during brown-out conditions in high-voltage power stages.
CMTI	>200 kV/μs - rejects fast common-mode transients in high-dV/dt environments like motor drives and inverters.
Operating Temp	–40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive onboard charger and traction inverter use.
Package	Narrow-body 16-pin SOIC (SOIC-16 NB) - provides 8.0 mm creepage/clearance, compatible with IPC-7351B standard footprints.

Pinout & Package

Narrow-body 16-pin SOIC (SOIC-16 NB) package with 1.27 mm pitch, 10.3 mm × 7.5 mm body size, and 0.65 mm max height. Reinforced insulation barrier separates input (pins 1–8) from output (pins 9–16) sides.

Pin/Terminal	Circuit Role	Design Meaning
VIA	Non-inverting logic input for gate driver A	Accepts CMOS-level PWM signal; unused in SI82F99x configuration (replaced by PWM pin).
VIB	Non-inverting logic input for gate driver B	Not connected in SI82F99x; device uses single PWM input for complementary outputs.
PWM	Single-input control for complementary outputs	Drives VOA high / VOB low when high; VOA low / VOB high when low - native half-bridge mode.
EN	Active-high enable control	Asserting EN = high enables normal operation; deasserting forces both VOA and VOB low unconditionally.
DT	Dead time programming input	Resistor from DT to GNDI sets dead time (t_DT = 1.73 × R_DT + 5.74 ns); connect to VDDI to disable dead time.
SPD+	Sourcing current programming input	Resistor to GNDI selects one of eight turn-on current levels (SPD1–SPD8); eliminates external gate resistors.
SPD−	Sinking current programming input	Resistor to GNDI selects one of eight turn-off current levels; enables dynamic Miller clamp activation at VMCTA/B.
VDDA / GNDA	High-side gate driver supply and ground	Independent 5–30 V supply domain for high-side FET; isolated from low-side domain.
VDDB / GNDB	Low-side gate driver supply and ground	Independent 5–30 V supply domain for low-side FET; galvanically separated from high-side domain.
VOA / VOB	High-side and low-side gate drive outputs	Current-source outputs with integrated Miller clamp; no external gate resistor required for optimal switching.
VDDI / GNDI	Logic input supply and ground	3–20 V domain powering CMOS inputs, isolation modulator, and internal LDOs; isolated from gate drive domains.
NC (pins 12, 13)	No-connect terminals	Internally unconnected; must remain floating per datasheet - not tied to any potential.

Key Features

Feature	Design Value
Selectable Variable Current Drive (SelVCD™)	Eight discrete sourcing/sinking current levels set via SPD+/SPD− resistors - replaces gate resistors and enables precise dV/dt control.
Integrated Miller Clamp	Activates automatically when VOA/VOB falls below VMCTA/B (~1.9 V) - clamps Miller current without external components.
Programmable Dead Time	Resistor-programmed delay (10–110 kΩ → 23–195 ns) between VOA/VOB transitions - prevents shoot-through in half-bridge circuits.
AEC-Q100 Qualified	Grade 1 (–40 °C to +125 °C ambient) qualification - validated for automotive onboard chargers and traction inverters.
High CMTI & Low Skew	200 kV/μs common-mode transient immunity and <5 ns channel-to-channel skew - ensures robust operation in noisy high-power systems.
Reinforced Isolation	6 kVRMS isolation rating with UL, VDE, CSA, and CQC certifications - meets safety requirements for EV and industrial applications.

Applications

Onboard Charger (OBC)	Motor Inverter
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems operating up to 1.5 kW. IC Role / Device Role / Timing Role: High-Side/Low-Side gate driver controlling SiC MOSFET half-bridge switches in totem-pole PFC and isolated DC-DC stages. Use Value: SelVCD™ enables optimized turn-on/turn-off timing for efficiency vs. EMI trade-offs; 15 V UVLO ensures reliable operation during grid voltage sags.	Use Scenario: Traction inverter stage in 48 V mild-hybrid or 400 V BEV systems with field-oriented control. IC Role / Device Role / Timing Role: Isolated gate driver delivering synchronized, skew-controlled drive to high-side/low-side IGBTs or SiC FETs in three-phase leg. Use Value: <5 ns skew preserves PWM fidelity across phases; 200 kV/μs CMTI rejects noise from adjacent motor phases and high-current bus transients.
Industrial UPS	Renewable Energy Inverter
Use Scenario: Double-conversion online UPS with IGBT-based inverter stage delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Dual isolated driver managing complementary switching of high-voltage IGBTs in full-bridge inverter topology. Use Value: Integrated Miller clamp suppresses false turn-on during high dV/dt commutation; 6 kVRMS isolation meets IEC 62040-1 safety requirements.	Use Scenario: Grid-tied solar string inverter with SiC MOSFETs in interleaved boost and three-phase inverter stages. IC Role / Device Role / Timing Role: High-reliability gate driver enabling fast, controlled switching of 1200 V SiC devices under variable irradiance and temperature. Use Value: AEC-Q100 qualification ensures long-term stability in outdoor enclosures; SPD± programming allows adaptive gate drive for MPPT efficiency optimization.

Onboard Charger (OBC)

Motor Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems operating up to 1.5 kW.

IC Role / Device Role / Timing Role: High-Side/Low-Side gate driver controlling SiC MOSFET half-bridge switches in totem-pole PFC and isolated DC-DC stages.

Use Value: SelVCD™ enables optimized turn-on/turn-off timing for efficiency vs. EMI trade-offs; 15 V UVLO ensures reliable operation during grid voltage sags.

Use Scenario: Traction inverter stage in 48 V mild-hybrid or 400 V BEV systems with field-oriented control.

IC Role / Device Role / Timing Role: Isolated gate driver delivering synchronized, skew-controlled drive to high-side/low-side IGBTs or SiC FETs in three-phase leg.

Use Value: <5 ns skew preserves PWM fidelity across phases; 200 kV/μs CMTI rejects noise from adjacent motor phases and high-current bus transients.

Industrial UPS

Renewable Energy Inverter

Use Scenario: Double-conversion online UPS with IGBT-based inverter stage delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: Dual isolated driver managing complementary switching of high-voltage IGBTs in full-bridge inverter topology.

Use Value: Integrated Miller clamp suppresses false turn-on during high dV/dt commutation; 6 kVRMS isolation meets IEC 62040-1 safety requirements.

Use Scenario: Grid-tied solar string inverter with SiC MOSFETs in interleaved boost and three-phase inverter stages.

IC Role / Device Role / Timing Role: High-reliability gate driver enabling fast, controlled switching of 1200 V SiC devices under variable irradiance and temperature.

Use Value: AEC-Q100 qualification ensures long-term stability in outdoor enclosures; SPD± programming allows adaptive gate drive for MPPT efficiency optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8239BD-IS3R	Universal configuration (dual independent inputs), no PWM pin; requires separate VIA/VIB signals instead of single PWM.	Better suited for dual independent half-bridges or synchronous buck where channels operate non-complementarily.	Select only if design requires independent control of both outputs - SI82F99ACE-IS3R is preferred for standard half-bridge with single PWM.
UCC5390SCDWR	Texas Instruments part with 5.7 kVRMS isolation, 100 kV/μs CMTI, and fixed 4 A/6 A peak output - no SelVCD™ or programmable dead time.	Limited flexibility in gate drive strength tuning; lacks integrated Miller clamp and dynamic speed control capability.	Choose when cost sensitivity outweighs need for adaptive gate drive; SI82F99ACE-IS3R offers superior EMI control and layout simplification.

Compared with Si8239BD-IS3R and UCC5390SCDWR, the SI82F99ACE-IS3R uniquely combines single-PWM half-bridge operation, eight-level SelVCD™ current programming, and integrated Miller clamp - reducing component count and improving switching reliability in high-frequency SiC/GaN systems.

Availability

SI82F99ACE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor inverters, and industrial UPS systems requiring stable component supply, automotive-grade reliability, and reinforced isolation certification.

Supply support for SI82F99ACE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in automotive and industrial power conversion, emphasizing CMTI performance, AEC-Q100 compliance, and adaptive gate drive control.

FAQ

What is the isolation rating and safety certification status of the SI82F99ACE-IS3R?

The SI82F99ACE-IS3R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its reinforced insulation barrier meets 2 MOPP requirements per IEC 60601-1, making it suitable for medical and automotive applications where galvanic separation is critical. All certifications apply directly to the SI82F99ACE-IS3R device variant.

How does the SelVCD™ feature eliminate the need for external gate resistors in the SI82F99ACE-IS3R?

SelVCD™ in the SI82F99ACE-IS3R configures each output (VOA/VOB) as a precision current source with eight selectable sourcing (SPD+) and sinking (SPD−) levels. Because output current is actively regulated - not voltage-limited - no external resistor is needed to control di/dt or dV/dt. This also enables the integrated Miller clamp to function directly at the output pin without voltage drop interference, which would occur with series gate resistors.

What is the function of the DT pin in the SI82F99ACE-IS3R, and how is dead time programmed?

In the SI82F99ACE-IS3R, the DT pin accepts an external resistor (R_DT) tied to GNDI to program dead time between VOA and VOB transitions. The relationship is t_DT = 1.73 × R_DT + 5.74 ns (R_DT = 10–110 kΩ → t_DT = 23–195 ns). Connecting DT to VDDI disables dead time insertion and overlap protection, reverting the device to dual independent driver mode - though SI82F99ACE-IS3R is configured for High-Side/Low-Side operation by default.

Does the SI82F99ACE-IS3R support dynamic gate drive strength adjustment during operation?

Yes - the SI82F99ACE-IS3R supports dynamic speed control via analog voltage applied to SPD+ and SPD− pins. Each pin accepts a voltage within defined bounds (e.g., SPD7– = 1.25–1.45 V) to select current level in real time. The Speed Update Delay (t_SUD) is typically 100 ns, allowing rapid adaptation to changing load or thermal conditions without firmware intervention or external DACs.

What UVLO threshold is implemented in the SI82F99ACE-IS3R, and how does it affect system behavior?

The SI82F99ACE-IS3R uses a 15 V undervoltage lockout (UVLO) threshold on both VDDA and VDDB supplies. When either supply drops ≤14.3 V (UVLO− hysteresis), the corresponding output (VOA or VOB) is forced low to prevent partial turn-on of power switches. This protects SiC FETs and IGBTs from shoot-through or thermal runaway during brown-out events - a critical safeguard in high-voltage automotive and industrial power stages.

SI82F99ACE-IS3R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82F99ACE-IS3R FAQ

1.How can I place an order for SI82F99ACE-IS3R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99ACE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99ACE-IS3R reliable?

The price and inventory of SI82F99ACE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99ACE-IS3R is usually 5 days.

3.What payment methods are accepted for SI82F99ACE-IS3R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99ACE-IS3R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99ACE-IS3R?

SI82F99ACE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99ACE-IS3R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99ACE-IS3R?

For technical support, including SI82F99ACE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99ACE-IS3R requirements.

6.How does Aetrix verify that SI82F99ACE-IS3R is sourced from the original manufacturer or authorized distributors?

All SI82F99ACE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99ACE-IS3R meets industry standards.

7.What is the process for return or replacement of SI82F99ACE-IS3R?

All SI82F99ACE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99ACE-IS3R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99ACE-IS3R part is unused and in its original packaging.

Return procedure for SI82F99ACE-IS3R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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