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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82F99AEE-IS3R

Name: SI82F99AEE-IS3R
Brand: Skyworks Solutions Inc.
SKU: SI82F99AEE-IS3R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82F99AEE-IS3R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82F99AEE-IS3R.pdf

Description:: 6 KV 2-CHANNEL ISOLATED SELVCD G

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Product details

Overview

SI82F99AEE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, 6 kVRMS reinforced isolation, SelVCD™ current-source outputs (8-level programmable sourcing/sinking), integrated Miller clamp, and <5 ns channel-to-channel skew. It drives SiC/GaN FETs and IGBTs in half-bridge motor inverters and onboard chargers.

For engineers reviewing the SI82F99AEE-IS3R datasheet, SI82F99AEE-IS3R pinout, SI82F99AEE-IS3R application, or SI82F99AEE-IS3R equivalent, this page delivers verified functional identity, validated SOIC-16 narrow-body package mapping, confirmed CMOS input interface, exact UVLO thresholds (15 V), and real-world dead time programming behavior using external R_DT.

Technical Context

The SI82F99AEE-IS3R implements differential capacitive isolation using duplicated SiO₂ barriers modulated via OOK RF carrier, enabling 200 kV/µs CMTI and stable timing across temperature. Its High-Side/Low-Side topology uses a single PWM input to drive complementary outputs with user-programmable dead time via resistor-connected DT pin.

It integrates a high-precision current-source output stage with SelVCD™, where SPD+ and SPD− pins set sourcing/sinking current independently across eight levels; Miller clamp engages automatically when VOA/VOB falls below VMCTA/B during turn-off, eliminating need for external gate resistors.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Voltage	6 kVRMS for 1 minute - certified reinforced insulation per UL 1577, VDE 60747-17, CSA 62368-1
Channel Skew	<5 ns - ensures precise timing alignment between high-side and low-side outputs in half-bridge switching
Input Supply Range	3 V to 20 V - supports direct connection to MCU I/O or level-shifted control logic without external regulators
Gate Drive Supply	5 V to 30 V - enables direct drive of SiC FETs requiring >20 V gate bias and IGBTs with 15 V gate drive
UVLO Threshold	15 V (VDDA/B) - prevents erroneous switching during power-up/down by holding outputs low until gate supply stabilizes
CMTI	>200 kV/µs - maintains signal integrity in high-dV/dt environments like motor drives and inverters
Operating Temp	–40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for under-hood automotive applications

Pinout & Package

Narrow-body 16-pin SOIC (SOIC-16 NB) package with 1.27 mm pitch, creepage ≥8.3 mm, clearance ≥8.3 mm, and reinforced insulation barrier between input and output sides.

Pin/Terminal	Circuit Role	Design Meaning
VIA	Logic input terminal	Not used - SI82F99x uses PWM input only; VIA is NC in this variant
VIB	Logic input terminal	Not used - SI82F99x uses PWM input only; VIB is NC in this variant
PWM	Primary control input	Single CMOS-compatible input driving complementary VOA/VOB outputs with dead-time insertion
EN	Enable control	Active-high signal that unconditionally forces VOA/VOB low when deasserted; overrides all other inputs
DT	Dead time programming	Resistor-to-GND sets dead time (1.73×R_DT + 5.74 ns); tied to VDDI disables dead time for dual-driver mode
SPD+	Sourcing current control	Resistor-to-GND selects one of eight sourcing current levels (SPD1–SPD8); enables dynamic speed control via voltage
SPD−	Sinking current control	Resistor-to-GND selects one of eight sinking current levels; triggers Miller clamp at VMCTA/B during turn-off
VDDA / GNDA	High-side gate supply	Independent 5–30 V power domain for VOA output; includes dedicated UVLO monitoring
VDDB / GNDB	Low-side gate supply	Independent 5–30 V power domain for VOB output; includes dedicated UVLO monitoring
VDDI / GNDI	Logic input supply	3–20 V domain powering CMOS inputs, isolation modulator, and internal LDO; UVLO threshold = 15 V
VOA / VOB	Gate driver outputs	Current-source outputs with integrated Miller clamp; no external gate resistors required for optimal switching
NC (Pins 12,13)	No connection	Unbonded die pads - must remain floating; no PCB trace or component connection permitted

Key Features

Feature	Design Value
Selectable Variable Current Drive (SelVCD™)	Eight discrete sourcing/sinking current levels per output, adjustable via SPD+/SPD− resistors or analog voltage, ±10% tolerance over temp/process
Integrated Miller Clamp	Automatically engages when VOA/VOB falls below VMCTA/B during turn-off, clamping gate voltage to GNDA/B without external components
Programmable Dead Time	User-configurable delay (10–120 ns typical) between VOA/VOB transitions via single R_DT resistor on DT pin, preventing shoot-through in half-bridge topologies
Reinforced Isolation	6 kVRMS 1-min rating with 1500 VRMS working voltage and 10 kV bipolar surge capability - meets automotive and industrial safety standards
AEC-Q100 Qualified	Grade 1 (–40 °C to +125 °C ambient) qualification with automotive-specific manufacturing flow, ensuring low defectivity for EV traction inverters and OBCs

Applications

Motor Drives	Onboard Chargers (OBC)
Use Scenario: Driving SiC half-bridge in 800 V EV traction inverter with 10 kHz PWM and <100 ns dead time requirements. IC Role / Device Role / Timing Role: High-Side/Low-Side isolated gate driver providing synchronized, skew-controlled VOA/VOB outputs with programmable dead time and Miller clamping. Use Value: Eliminates external gate resistors and discrete Miller clamps, reducing BOM count and layout area while maintaining <5 ns skew across temperature.	Use Scenario: Controlling dual-phase interleaved LLC resonant converter in 11 kW bidirectional OBC with fast transient response. IC Role / Device Role / Timing Role: Isolated PWM-to-complementary-output translator with independent UVLO on VDDA/VDDB and dynamic current drive scaling via SPD±. Use Value: Enables adaptive gate drive strength during soft-switching transitions, improving efficiency and reducing EMI without changing gate resistor network.
Power Inverters	Uninterruptible Power Supplies
Use Scenario: 3-phase solar inverter string module using discrete SiC MOSFETs with 200 V/ns dV/dt stress on gate loops. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver delivering 200 kV/µs CMTI immunity and tight propagation delay matching between channels. Use Value: Prevents false triggering in high-noise photovoltaic environments, ensuring reliable commutation even during lightning-induced transients.	Use Scenario: Double-conversion UPS with IGBT-based output stage requiring robust fault handling and defined output states during brownouts. IC Role / Device Role / Timing Role: Fault-tolerant isolated driver with EN-controlled shutdown, independent UVLO per gate supply, and no unknown output states. Use Value: Guarantees safe turn-off during AC loss events, eliminating risk of shoot-through or latch-up during grid failure recovery sequences.

Motor Drives

Onboard Chargers (OBC)

Use Scenario: Driving SiC half-bridge in 800 V EV traction inverter with 10 kHz PWM and <100 ns dead time requirements.

IC Role / Device Role / Timing Role: High-Side/Low-Side isolated gate driver providing synchronized, skew-controlled VOA/VOB outputs with programmable dead time and Miller clamping.

Use Value: Eliminates external gate resistors and discrete Miller clamps, reducing BOM count and layout area while maintaining <5 ns skew across temperature.

Use Scenario: Controlling dual-phase interleaved LLC resonant converter in 11 kW bidirectional OBC with fast transient response.

IC Role / Device Role / Timing Role: Isolated PWM-to-complementary-output translator with independent UVLO on VDDA/VDDB and dynamic current drive scaling via SPD±.

Use Value: Enables adaptive gate drive strength during soft-switching transitions, improving efficiency and reducing EMI without changing gate resistor network.

Power Inverters

Uninterruptible Power Supplies

Use Scenario: 3-phase solar inverter string module using discrete SiC MOSFETs with 200 V/ns dV/dt stress on gate loops.

IC Role / Device Role / Timing Role: Reinforced-isolation gate driver delivering 200 kV/µs CMTI immunity and tight propagation delay matching between channels.

Use Value: Prevents false triggering in high-noise photovoltaic environments, ensuring reliable commutation even during lightning-induced transients.

Use Scenario: Double-conversion UPS with IGBT-based output stage requiring robust fault handling and defined output states during brownouts.

IC Role / Device Role / Timing Role: Fault-tolerant isolated driver with EN-controlled shutdown, independent UVLO per gate supply, and no unknown output states.

Use Value: Guarantees safe turn-off during AC loss events, eliminating risk of shoot-through or latch-up during grid failure recovery sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8239AD-IS3R	Universal configuration (dual independent inputs), no PWM input; same SOIC-16 NB package, identical isolation and SelVCD™ specs	Requires separate VIA/VIB signals instead of single PWM; better suited for synchronous rectification or non-complementary topologies	Select when independent control of high-side and low-side is needed; not drop-in for SI82F99AEE-IS3R's PWM-driven half-bridge use case
UCC5870QDWJRQ1	Texas Instruments part with 5.7 kVRMS isolation, 150 kV/µs CMTI, and fixed 10 A peak drive; no SelVCD™ or SPD± programming	Lacks programmable current drive and Miller clamp; requires external gate resistors and clamps for SiC/GaN optimization	Choose for cost-sensitive designs where fixed high-current drive suffices and dynamic speed control is unnecessary

Compared with Si8239AD-IS3R and UCC5870QDWJRQ1, SI82F99AEE-IS3R uniquely combines PWM-input simplicity, eight-level SelVCD™ current tuning, and integrated Miller clamp in a single AEC-Q100-qualified SOIC-16 package - optimizing for compact, high-efficiency SiC half-bridge systems.

Availability

SI82F99AEE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, power inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and reinforced isolation certification.

Supply support for SI82F99AEE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in automotive electrification and industrial power conversion, emphasizing CMTI robustness, programmable drive strength, and AEC-Q100 compliance.

FAQ

What is the isolation rating and safety certification status of SI82F99AEE-IS3R?

SI82F99AEE-IS3R provides 6 kVRMS reinforced isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1, VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage and 10 kV bipolar surge rating meet automotive and industrial safety requirements. The device achieves these ratings through dual SiO₂ capacitive barriers with differential OOK modulation, ensuring long-term reliability without optocoupler degradation.

How does the SelVCD™ technology in SI82F99AEE-IS3R eliminate the need for external gate resistors?

SI82F99AEE-IS3R implements SelVCD™ as a precision current-source output stage where SPD+ and SPD− pins directly program sourcing and sinking current across eight discrete levels. Because the output behaves as a regulated current source-not a voltage source-gate charging/discharging is controlled by current magnitude rather than RC time constants. This removes dependency on external gate resistors while enabling the integrated Miller clamp to function directly at VOA/VOB pins without voltage drop interference.

What is the function of the DT pin in SI82F99AEE-IS3R, and how is dead time programmed?

The DT pin in SI82F99AEE-IS3R programs dead time between VOA and VOB transitions using an external resistor (R_DT) connected to GNDI. Typical dead time follows t_DT = 1.73 × R_DT + 5.74 ns (R_DT = 10–110 kΩ). Connecting DT to VDDI disables dead time insertion and overlap protection, allowing SI82F99AEE-IS3R to operate as a dual independent driver. A 0.1 µF capacitor placed near DT improves noise immunity during resistor-based programming.

Does SI82F99AEE-IS3R support both SiC and GaN FETs, and what design features enable this?

Yes, SI82F99AEE-IS3R supports SiC and GaN FETs through its 5–30 V gate supply range, 200 kV/µs CMTI, <5 ns channel skew, and SelVCD™ current-source outputs. Its 15 V UVLO threshold ensures stable turn-on for SiC devices requiring >12 V gate bias, while programmable sinking current (via SPD−) enables fast, controlled turn-off critical for GaN's low Q_g and high dV/dt. Integrated Miller clamp further prevents spurious turn-on in both technologies.

What is the role of the EN pin in SI82F99AEE-IS3R, and how does it interact with UVLO conditions?

The EN pin in SI82F99AEE-IS3R is an active-high enable signal that unconditionally forces VOA and VOB low when deasserted (logic low), regardless of PWM state or gate supply conditions. However, EN has no effect if VDDI is below its 15 V UVLO threshold - in that case, SI82F99AEE-IS3R remains in shutdown with outputs held low by internal circuitry. This dual-layer control ensures fail-safe operation during power sequencing or fault events.

SI82F99AEE-IS3R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82F99AEE-IS3R FAQ

1.How can I place an order for SI82F99AEE-IS3R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99AEE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99AEE-IS3R reliable?

The price and inventory of SI82F99AEE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99AEE-IS3R is usually 5 days.

3.What payment methods are accepted for SI82F99AEE-IS3R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99AEE-IS3R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99AEE-IS3R?

SI82F99AEE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99AEE-IS3R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99AEE-IS3R?

For technical support, including SI82F99AEE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99AEE-IS3R requirements.

6.How does Aetrix verify that SI82F99AEE-IS3R is sourced from the original manufacturer or authorized distributors?

All SI82F99AEE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99AEE-IS3R meets industry standards.

7.What is the process for return or replacement of SI82F99AEE-IS3R?

All SI82F99AEE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99AEE-IS3R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99AEE-IS3R part is unused and in its original packaging.

Return procedure for SI82F99AEE-IS3R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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