My Inquiry
My Account
Skyworks Solutions Inc. SI82F99BBC-IS1
- Part No.:
- SI82F99BBC-IS1
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F99BBC-IS1.pdf
- Description:
- 3.75 KV 2-CHANNEL ISOLATED SELVC
- Quantity:
- Payment:
- Shipping:
Inventory:1,271
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI82F99BBC-IS1 from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, supporting SiC and GaN FETs in half-bridge topologies. It delivers 6 kVRMS isolation, <5 ns channel-to-channel skew, 200 kV/μs CMTI, and Selectable Variable Current Drive (SelVCD™) across eight sourcing/sinking levels - enabling precise gate control in onboard chargers and motor drives.
For engineers reviewing the SI82F99BBC-IS1 datasheet, SI82F99BBC-IS1 pinout, SI82F99BBC-IS1 application, or SI82F99BBC-IS1 equivalent, this page provides verified functional identity, validated pin roles, confirmed safety certifications (UL 1577, VDE 60747-17), exact SelVCD™ current settings, and automotive-grade AEC-Q100 qualification status - all specific to the SI82F99BBC-IS1 narrow-body SOIC-16 package.
Technical Context
The SI82F99BBC-IS1 implements differential capacitive isolation using silicon dioxide barriers, enabling RF-modulated signal transmission with OOK encoding for high noise immunity and low propagation delay variation. Its architecture integrates independent UVLO monitors per channel (4 V, 8 V, 12 V, or 15 V options), programmable dead time via external resistor on DT pin, and Miller clamp activation triggered at VMCTA/B threshold during VO→VOL transitions.
This device operates as a current-source output driver: SPD+ and SPD− pins configure sourcing and sinking currents independently across eight discrete levels, with ±10% tolerance over temperature and process for 8–15 V UVLO variants. The EN input forces both outputs low unconditionally, while PWM input synchronizes complementary VOA/VOB switching with overlap protection activated by simultaneous high inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - certified reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1. |
| Channel Skew | <5 ns - ensures precise timing alignment between high-side and low-side gate drive signals in half-bridge circuits. |
| CMTI | >200 kV/μs - prevents false triggering under fast transient common-mode noise in high-dv/dt power stages. |
| Input Supply Range | 3 V to 20 V - supports direct interface with MCU I/O or level-shifted control logic without external regulators. |
| Gate Supply Range | 5 V to 30 V - enables direct drive of SiC FETs requiring >20 V gate bias and GaN devices with 5–12 V gate thresholds. |
| UVLO Thresholds | 4 V, 8 V, 12 V, or 15 V - configurable per device variant; SI82F99BBC-IS1 uses 8 V UVLO for robust startup/shutdown behavior. |
| Operating Temp | –40 °C to +125 °C - qualified for automotive under-hood and industrial motor drive environments. |
| Package | Narrow-body 16-pin SOIC - 7.5 mm body width, creepage ≥8.3 mm, meets reinforced insulation spacing requirements. |
Pinout & Package
Narrow-body 16-pin SOIC package (7.5 mm width) with 8.3 mm creepage and reinforced insulation rating. Pin 1 marked with dot; pins 12 and 13 are NC (no connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Non-inverting logic input for gate driver A | Accepts CMOS-level PWM or control signal; active-high, Schmitt-triggered, deglitch-filtered. |
| VIB | Non-inverting logic input for gate driver B | Complementary input for dual independent control; used with VIA in universal mode or disabled in HS/LS mode. |
| EN | Active-high enable input | Drives VOA and VOB low when deasserted; overrides all other inputs - critical for safe shutdown sequences. |
| DT | Dead time programming input | Resistor-to-GND sets dead time (10–110 kΩ → 10–120 ns); tied to VDDI disables dead time for dual-driver operation. |
| SPD+ | Sourcing current programming input | Configures turn-on current level (8 settings); resistor or voltage source selects target current with ±10% tolerance. |
| SPD− | Sinking current programming input | Configures turn-off current level (8 settings); enables Miller clamp engagement at VMCTA/B during VO→VOL transition. |
| VDDA / GNDA | High-side gate driver supply and ground | Independent 5–30 V supply domain; UVLO monitoring prevents unsafe switching if VDDA drops below threshold. |
| VDDB / GNDB | Low-side gate driver supply and ground | Independent 5–30 V supply domain; allows asymmetric gate biasing (e.g., 15 V HS / 5 V LS) for optimized FET performance. |
| VOA / VOB | High-side and low-side gate driver outputs | Current-source outputs with integrated Miller clamp; no external gate resistors required for optimal switching control. |
| VDDI / GNDI | Logic input supply and ground | 3–20 V digital supply; powers isolation barrier and input logic; UVLO monitoring ensures deterministic startup behavior. |
| SPD+ / SPD− | Analog speed control inputs | High-voltage tolerant (up to 30 V), internally clamped; support static resistor or dynamic voltage-based current selection. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels per output, ±10% tolerance over temp/process - eliminates gate resistors and enables adaptive switching speed. |
| Integrated Miller Clamp | Automatically engages when VOA/VOB falls below VMCTA/B (~2.5 V), maximizing sink current (SPD7−) to suppress Miller-induced turn-on during dV/dt events. |
| Programmable Dead Time | Resistor-programmed 10–120 ns dead time between VOA/VOB transitions - prevents shoot-through in half-bridge configurations without external logic. |
| High-Voltage Input Tolerance | VIA, VIB, EN, DT, SPD+, SPD− tolerate up to 30 V - simplifies interface with industrial PLCs, battery-monitoring ICs, or fault-detection circuits. |
| AEC-Q100 Qualified | Grade 1 (–40 °C to +125 °C) qualification with automotive-specific manufacturing flow - ensures low defectivity and long-term reliability in EV systems. |
| No Unknown Output States | Deterministic VOA/VOB behavior during power-up, UVLO, disable, or fault conditions - guarantees safe default states in safety-critical applications. |
Applications
| Onboard Charger (OBC) | Industrial Motor Drive |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs operating at 100 kHz–1 MHz. IC Role / Device Role: Isolated high-side/low-side gate driver controlling half-bridge legs in totem-pole PFC and DC-DC LLC stages. Use Value: SelVCD™ enables optimized turn-on/off timing per FET type; 6 kVRMS isolation meets IEC 62109 and UL 62368-1 reinforced insulation requirements. |
Use Scenario: Field-oriented control (FOC) of 3-phase permanent magnet motors in HVAC compressors and servo inverters. IC Role / Device Role: Dual-channel isolated driver providing complementary gate signals with programmable dead time to prevent shoot-through. Use Value: <5 ns skew ensures accurate phase timing; CMTI >200 kV/μs maintains signal integrity in noisy factory environments with variable-frequency drives. |
| Renewable Energy Inverter | Uninterruptible Power Supply (UPS) |
Use Scenario: Grid-tied solar inverters using SiC half-bridges for MPPT and transformerless topology with high efficiency targets. IC Role / Device Role: Isolated gate driver for high-side/low-side switches in H-bridge output stage and DC-link chopper circuits. Use Value: 1500 VRMS working voltage and 10 kV bipolar surge rating support long-term reliability in outdoor installations exposed to lightning transients. |
Use Scenario: Online double-conversion UPS systems requiring fast transfer times and zero-break operation with IGBT/SiC hybrid switching. IC Role / Device Role: Gate driver for half-bridge inverter stage and bypass/static switch control with fail-safe EN-driven shutdown. Use Value: EN input enables hardware-level emergency stop; AEC-Q100 qualification supports extended service life in 24/7 datacenter deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BB-IS1 | Universal configuration (VIA/VIB inputs), no PWM input; same SOIC-16 package, identical isolation and CMTI specs. | Requires external logic for complementary output generation; lacks built-in dead time control and overlap protection. | Select when independent high-side/low-side control is needed without half-bridge constraints - e.g., dual synchronous buck converters. |
| UCC5390SCD | TI's 5.7 kVRMS isolated dual-driver with 100 kV/μs CMTI; single 3.3–15 V input supply; no SPD± analog programming. | Fixed 4-A peak output; relies on external gate resistors; no integrated Miller clamp or programmable dead time. | Choose for cost-sensitive industrial designs where fixed-current drive and simpler layout outweigh adaptive control needs. |
Compared with SI82F99BBC-IS1, Si8239BB-IS1 offers greater input flexibility but requires external dead time management, while UCC5390SCD provides lower system cost at the expense of adaptive current control and Miller clamping - making SI82F99BBC-IS1 optimal for high-reliability SiC/GaN half-bridge systems demanding precise timing and transient immunity.
Availability
SI82F99BBC-IS1 is available at Aetrix Electronics and suitable for onboard chargers, motor drives, and renewable energy inverters requiring stable component supply, automotive-grade reliability, and reinforced isolation certification.
Supply support for SI82F99BBC-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si82Fx family was designed specifically for high-efficiency, high-reliability power conversion systems using wide-bandgap semiconductors - delivering isolated gate drive with programmable current, integrated protection, and automotive qualification in compact SOIC packages.
FAQ
What is the isolation rating and safety certification status of the SI82F99BBC-IS1?
The SI82F99BBC-IS1 is rated for 6 kVRMS isolation for 1 minute and carries pending UL 1577 recognition, VDE 60747-17 reinforced insulation approval, CSA 62368-1 compliance, and CQC GB4943.1 certification. These approvals confirm its suitability for reinforced insulation in AC-connected equipment such as EV onboard chargers and industrial UPS systems - all verified in the May 2024 preliminary datasheet revision 206821A.
Does the SI82F99BBC-IS1 support SiC and GaN FETs, and how does it handle their gate drive requirements?
Yes, the SI82F99BBC-IS1 supports SiC and GaN FETs through its 5–30 V gate supply range, programmable SelVCD™ current (eight levels), and integrated Miller clamp. It eliminates external gate resistors by operating as a precision current source, and the Miller clamp activates at VMCTA/B (~2.5 V) to suppress parasitic turn-on - directly addressing the fast dv/dt and low gate charge challenges of wide-bandgap devices.
How is dead time controlled on the SI82F99BBC-IS1, and what is the adjustment range?
Dead time on the SI82F99BBC-IS1 is controlled via an external resistor (RDT) connected between the DT pin and GNDI. RDT values from 10 kΩ to 110 kΩ yield typical dead times from 10 ns to 120 ns, calculated using tDT = 1.73 × RDT + 5.74. Connecting DT to VDDI disables dead time insertion entirely, allowing the SI82F99BBC-IS1 to function as a dual independent driver instead of a half-bridge controller.
What is the role of the SPD+ and SPD− pins on the SI82F99BBC-IS1, and how are they configured?
The SPD+ and SPD− pins on the SI82F99BBC-IS1 set the sourcing and sinking current levels for both VOA and VOB outputs across eight discrete steps. Configuration is achieved using 1% resistors to GNDI (static mode) or voltage sources (dynamic mode). Each pin sources ISPD± current and measures resulting voltage to determine the selected level - enabling precise, repeatable gate drive strength without manual resistor selection or layout changes.
Is the SI82F99BBC-IS1 qualified for automotive applications, and what does that entail?
Yes, the SI82F99BBC-IS1 is AEC-Q100 Grade 1 qualified (–40 °C to +125 °C) and built using automotive-specific manufacturing flows across wafer fabrication, assembly, and test. This entails enhanced process controls, lower defectivity targets, and extended reliability testing - ensuring long-term stability in EV traction inverters, battery management systems, and ADAS power supplies where field failure is unacceptable.
SI82F99BBC-IS1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F99BBC-IS1 FAQ
1.How can I place an order for SI82F99BBC-IS1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F99BBC-IS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F99BBC-IS1 reliable?
The price and inventory of SI82F99BBC-IS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99BBC-IS1 is usually 5 days.
3.What payment methods are accepted for SI82F99BBC-IS1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99BBC-IS1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F99BBC-IS1?
SI82F99BBC-IS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F99BBC-IS1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F99BBC-IS1?
For technical support, including SI82F99BBC-IS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99BBC-IS1 requirements.
6.How does Aetrix verify that SI82F99BBC-IS1 is sourced from the original manufacturer or authorized distributors?
All SI82F99BBC-IS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99BBC-IS1 meets industry standards.
7.What is the process for return or replacement of SI82F99BBC-IS1?
All SI82F99BBC-IS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99BBC-IS1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F99BBC-IS1 part is unused and in its original packaging.
Return procedure for SI82F99BBC-IS1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI82F99BBC-IS1 Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
