Skyworks Solutions Inc. SI82F99BBC-IS1R

Overview

SI82F99BBC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver in high-side/low-side configuration with enable (EN) input, supporting SiC and GaN FETs in half-bridge topologies. It delivers 6 kVRMS isolation, <5 ns channel-to-channel skew, 200 kV/μs CMTI, and Selectable Variable Current Drive (SelVCD™) across eight sourcing/sinking levels - enabling precise gate control without external resistors in onboard chargers and motor drives.

For engineers reviewing the SI82F99BBC-IS1R datasheet, SI82F99BBC-IS1R pinout, SI82F99BBC-IS1R application, or SI82F99BBC-IS1R equivalent, this page provides verified functional identity, validated pin roles, confirmed safety certifications (UL 1577, VDE 60747-17), real-world dead time programmability, and direct alternative part comparisons for half-bridge power stage design.

Technical Context

The SI82F99BBC-IS1R implements differential capacitive isolation using duplicated silicon dioxide (SiO₂) capacitors modulated via RF OOK, delivering robust noise immunity and tight timing matching. Its logic inputs are CMOS-compatible, Schmitt-triggered, and deglitched - ensuring reliable operation in noisy industrial environments.

This variant uses PWM input architecture with EN control, supports independent UVLO thresholds (4 V/8 V/12 V/15 V), and integrates Miller clamping directly at VOA/VOB pins. Dead time is resistor-programmable (10–110 kΩ) on the DT pin, and disabling it by connecting DT to VDDI reconfigures the device as a dual independent driver.

Key Specifications

Pinout & Package

Narrow-body 16-pin SOIC package (7.5 mm × 10.3 mm, 1.27 mm pitch) with creepage ≥8.3 mm and clearance ≥8.0 mm - optimized for high-voltage spacing in compact power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with Si8239BB-IS1R, SI82F99BBC-IS1R offers simplified control via PWM input but sacrifices independent channel flexibility; versus UCC5390SCDR, it delivers superior noise immunity, adaptive drive strength, and reduced external component count - critical for SiC/GaN systems demanding precision timing and reliability.

Availability

SI82F99BBC-IS1R is available at Aetrix Electronics and suitable for onboard chargers, motor drive inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade qualification, and reinforced isolation compliance.

Supply support for SI82F99BBC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions for wireless, automotive, and industrial markets.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in SiC/GaN-based power conversion systems - emphasizing timing precision, noise immunity, and integration of Miller clamping and variable current drive.

FAQ

What is the isolation rating and safety certification status of SI82F99BBC-IS1R?

SI82F99BBC-IS1R is rated for 6 kVRMS isolation for 1 minute and carries pending UL 1577 recognition, VDE 60747-17 (reinforced insulation), CSA 62368-1, and CQC GB4943.1 approvals. These certifications confirm its suitability for reinforced insulation in medical (60601-1, 2 MOPP) and industrial power applications where galvanic separation is mandatory.

How does the SelVCD™ feature work in SI82F99BBC-IS1R, and what design benefit does it provide?

SI82F99BBC-IS1R implements SelVCD™ via SPD+ and SPD− pins, each accepting a resistor-to-ground to select one of eight discrete sourcing or sinking current levels. This eliminates external gate resistors, reduces PCB footprint, and enables precise tuning of turn-on/turn-off speeds - directly improving efficiency and EMI in SiC/GaN half-bridge designs without sacrificing reliability.

Can SI82F99BBC-IS1R drive both SiC and GaN FETs, and what makes it suitable for these devices?

Yes, SI82F99BBC-IS1R is explicitly qualified for SiC FETs and GaN HEMTs. Its 200 kV/μs CMTI withstands fast dV/dt edges, <5 ns skew ensures synchronized switching, and the integrated Miller clamp actively suppresses false turn-on - all critical for maintaining safe operation and efficiency in high-speed wide-bandgap power stages.

What is the function of the DT pin in SI82F99BBC-IS1R, and how is dead time configured?

The DT pin in SI82F99BBC-IS1R programs dead time between VOA and VOB transitions using an external resistor (10–110 kΩ) to GNDI. Typical dead time ranges from ~20 ns to ~120 ns. Connecting DT to VDDI disables dead time and overlap protection, allowing SI82F99BBC-IS1R to operate as a dual independent driver rather than a half-bridge controller.

Does SI82F99BBC-IS1R include built-in protection features, and how do they enhance system reliability?

Yes, SI82F99BBC-IS1R includes undervoltage lockout (UVLO) on all supplies (VDDI, VDDA, VDDB), integrated Miller clamp at VOA/VOB, short-circuit clamp, thermal protection, and defined low-state outputs during faults. These features eliminate undefined gate states, prevent shoot-through, suppress parasitic turn-on, and protect against overtemperature - significantly improving robustness in automotive and industrial power systems.