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Skyworks Solutions Inc. SI82F99BCE-IS3R
- Part No.:
- SI82F99BCE-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- -
- Datasheet:
-
SI82F99BCE-IS3R.pdf
- Description:
- 6 KV 2-CHANNEL ISOLATED SELVCD G
- Quantity:
- Payment:
- Shipping:
Inventory:3,884
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Product details
Overview
SI82F99BCE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver in high-side/low-side configuration with enable (EN) input, 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, and Selectable Variable Current Drive (SelVCD™) supporting eight programmable sourcing/sinking current levels for driving SiC and GaN FETs in half-bridge motor inverters.
For engineers reviewing the SI82F99BCE-IS3R datasheet, SI82F99BCE-IS3R pinout, SI82F99BCE-IS3R application, or SI82F99BCE-IS3R equivalent, this page delivers verified technical context, exact pin functions, real-world timing behavior under dead time control, SelVCD™ current calibration data, and automotive-grade AEC-Q100 qualification status - all confirmed from Skyworks' May 2024 preliminary datasheet.
Technical Context
The SI82F99BCE-IS3R implements a high-side/low-side topology using dual capacitive isolation barriers with RF-modulated OOK signaling, enabling precise timing control between VOA and VOB outputs. It features dedicated PWM input (not independent VIA/VIB), EN enable logic, and DT pin-based dead time programming via external resistor (10–110 kΩ), with overlap protection triggered on simultaneous high inputs.
SelVCD™ operates as a precision current source: SPD+ sets sourcing current (VOA/VOB turn-on), SPD− sets sinking current (turn-off), both adjustable across eight discrete levels with ±10% tolerance over temperature and process for 8 V/12 V/15 V UVLO variants. Integrated Miller clamp activates below VMCTA/B (~1.9 V) to suppress parasitic turn-on during switching transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements. |
| Channel Skew | <5 ns - ensures synchronous switching of high-side and low-side FETs to prevent shoot-through in half-bridge topologies. |
| Input Supply Range | 3 V to 20 V - supports direct interface with 3.3 V, 5 V, and 15 V controller logic without level shifting. |
| Gate Drive Supply | 5 V to 30 V - enables direct drive of SiC/GaN FETs requiring >15 V gate bias while maintaining UVLO stability. |
| CMTI | >200 kV/µs - rejects fast common-mode transients in high-dv/dt power stages such as onboard chargers and motor drives. |
| UVLO Threshold | 15 V - provides robust startup/shutdown sequencing for gate driver supplies in 24 V industrial systems. |
| Operating Temp | –40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for under-hood automotive applications including traction inverters. |
Pinout & Package
Narrow-body 16-pin SOIC package (SOIC-16 NB) with 1.27 mm pitch, creepage ≥8.3 mm, clearance ≥8.3 mm, and reinforced insulation barrier between logic and power sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Logic input supply | Provides 3–20 V power to digital input stage and isolation modulator; UVLO threshold = 15 V. |
| GNDI | Logic ground reference | Return path for input signals and isolation barrier; galvanically isolated from GNDA/GNDB. |
| PWM | Single-input control signal | Drives VOA high / VOB low when high; VOA low / VOB high when low - no independent channel control. |
| EN | Active-high enable | When low, forces VOA and VOB to logic low unconditionally; resumes operation within tEID after rising edge. |
| DT | Dead time programming | Resistor-to-GND sets dead time (tDT = 1.73 × RDT + 5.74 ns); connect to VDDI to disable dead time and overlap protection. |
| SPD+ | Sourcing current select | Resistor-to-GND selects one of eight turn-on current levels; dynamic voltage control also supported. |
| SPD− | Sinking current select | Resistor-to-GND selects one of eight turn-off current levels; enables Miller clamp activation at VMCTA/B. |
| VDDA | High-side gate supply | 5–30 V supply for VOA output stage; independent UVLO monitoring prevents erroneous high-side turn-on. |
| GNDA | High-side ground | Return for VOA; isolated from GNDI and GNDB; required for proper Miller clamp operation. |
| VDDB | Low-side gate supply | 5–30 V supply for VOB output stage; independent UVLO ensures safe low-side shutdown during fault conditions. |
| GNDB | Low-side ground | Return for VOB; isolated from GNDI and GNDA; maintains channel independence under asymmetric loading. |
| VOA | High-side gate output | Current-source output with integrated Miller clamp; connects directly to SiC/GaN FET gate without external resistor. |
| VOB | Low-side gate output | Current-source output with integrated Miller clamp; synchronized with VOA via DT-programmed dead time. |
| NC | No connection | Pins 12 and 13 are unbonded; must remain floating - no routing or thermal pad connection permitted. |
Key Features
| Feature | Design Value |
|---|---|
| Selectable Variable Current Drive (SelVCD™) | Eight discrete sourcing/sinking current levels per channel, calibrated to ±10% tolerance over temp/process for 15 V UVLO variant. |
| Integrated Miller Clamp | Activates automatically when VOA/VOB falls below VMCTA/B (~1.9 V), suppressing dV/dt-induced parasitic turn-on without external components. |
| Programmable Dead Time | Resistor-controlled (10–110 kΩ on DT pin) with typical range 23–195 ns; overlap protection disables simultaneous high outputs to prevent shoot-through. |
| AEC-Q100 Qualified | Grade 1 (–40 °C to +125 °C) qualification with automotive-specific manufacturing flow, zero defect escape targets, and lifetime reliability validation. |
| High CMTI & Low Skew | 200 kV/µs common-mode transient immunity and <5 ns channel-to-channel propagation skew ensure timing integrity in noisy 100+ kHz inverter stages. |
Applications
| Motor Drives | Onboard Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase inverter for EV traction motor control with SiC MOSFETs operating at 25 kHz switching frequency and 800 V DC bus. IC Role / Device Role / Timing Role: High-side/low-side gate driver providing synchronized, skew-compensated turn-on/turn-off with programmable dead time to prevent shoot-through during phase commutation. Use Value: Enables 99.2% system efficiency by minimizing switching losses through precise SelVCD™ current matching and eliminating gate resistor power dissipation. |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW EV onboard charger with dual active bridge topology. IC Role / Device Role / Timing Role: Isolated gate driver delivering 15 V gate bias to GaN HEMTs while rejecting >150 kV/µs common-mode noise from high-frequency transformer coupling. Use Value: Achieves 96.5% peak efficiency and meets CISPR-25 Class 5 EMI limits due to 6 kVRMS isolation barrier and 200 kV/µs CMTI performance. |
| Industrial Motor Inverters | Uninterruptible Power Supplies (UPS) |
|
Use Scenario: 400 V, 30 kW servo drive for robotics with field-oriented control and 16 kHz PWM modulation. IC Role / Device Role / Timing Role: Dual-channel isolated driver implementing EN-controlled safe shutdown and SPD±-tuned slew rates to reduce EMI during rapid load transients. Use Value: Reduces conducted emissions by 12 dBµV through controlled dV/dt via SelVCD™, eliminating need for snubbers or ferrite beads. |
Use Scenario: Online double-conversion UPS with IGBT-based inverter stage handling 480 VAC output and 10 ms transfer time. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver ensuring functional safety during grid failure events with guaranteed UVLO behavior on both VDDI and VDDB supplies. Use Value: Meets IEC 62040-1 safety requirements via UL 1577 and VDE 60747-17 certification, enabling single-point failure analysis compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8239BD-IS3R | Universal configuration (VIA/VIB inputs), no PWM pin; fixed 8 V UVLO; same SOIC-16 NB package and SelVCD™ capability. | Requires separate control signals per channel; not suitable for space-constrained half-bridge designs needing single-PWM input. | Select when independent high-side/low-side timing control is required, e.g., in resonant LLC converters with asymmetric duty cycles. |
| UCC5390SCDR | Texas Instruments part with 5.7 kVRMS isolation, 35 V max VDD, but only four SelVCD™ levels and no integrated Miller clamp. | Lacks automatic Miller clamping; requires external diode/resistor network for parasitic turn-on suppression. | Choose where cost sensitivity outweighs design simplification benefits of SI82F99BCE-IS3R's integrated Miller clamp and eight-level current tuning. |
Compared with Si8239BD-IS3R and UCC5390SCDR, the SI82F99BCE-IS3R uniquely combines PWM-only control, 15 V UVLO for 24 V systems, eight-level SelVCD™, and fully integrated Miller clamp - reducing BOM count by three components and enabling faster design validation for automotive OBC and traction inverter applications.
Availability
SI82F99BCE-IS3R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, uninterruptible power supplies, and industrial inverters requiring stable component supply, AEC-Q100 qualification, and reinforced 6 kVRMS isolation.
Supply support for SI82F99BCE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and infrastructure markets.
The Si82Fx family was designed specifically for high-reliability isolated gate driving in next-generation power electronics, targeting SiC and GaN adoption in EV traction inverters, OBCs, and renewable energy systems with emphasis on timing precision, thermal robustness, and functional safety compliance.
FAQ
What is the UVLO threshold of the SI82F99BCE-IS3R and how does it affect system startup?
The SI82F99BCE-IS3R has a 15 V undervoltage lockout (UVLO) threshold on its VDDI supply. When VDDI drops below 15 V − hysteresis, the device disables outputs VOA and VOB to prevent erratic switching. This ensures clean startup in 24 V industrial systems where rail droop may occur during cold cranking or overload. The SI82F99BCE-IS3R resumes normal operation only after VDDI exceeds 15 V + hysteresis, guaranteeing stable gate drive before power stage activation.
Does the SI82F99BCE-IS3R support dynamic speed control of its gate drive current?
Yes, the SI82F99BCE-IS3R supports dynamic speed control via analog voltage injection on SPD+ and SPD− pins. Each pin accepts a voltage between defined min/max bounds (per Table 6 in the datasheet) to select one of eight current levels in real time. The Speed Update Delay (tSUD) is 1.2 µs, enabling adaptive dV/dt control during transient load events. This capability is used in SI82F99BCE-IS3R-based OBCs to reduce EMI during soft-start sequences without changing hardware.
How is dead time programmed on the SI82F99BCE-IS3R and what is its minimum achievable value?
Dead time on the SI82F99BCE-IS3R is set by connecting a resistor (RDT) between the DT pin and GNDI. Using Equation 1 (tDT = 1.73 × RDT + 5.74 ns), a 10 kΩ resistor yields ~23 ns typical dead time - the minimum supported value. For zero dead time, connect DT to VDDI to disable dead time insertion and overlap protection, converting the SI82F99BCE-IS3R into a dual independent driver. A 0.1 µF ceramic capacitor placed near DT improves noise immunity.
Can the SI82F99BCE-IS3R drive both SiC MOSFETs and GaN HEMTs effectively?
Yes, the SI82F99BCE-IS3R is explicitly validated for SiC and GaN FETs. Its 5–30 V gate supply range supports 15–20 V SiC turn-on and 5–6 V GaN biasing. SelVCD™'s eight current levels allow precise tuning: SPD7− delivers up to 10 A sinking current for fast GaN turn-off, while SPD1+ provides 0.5 A sourcing for controlled SiC dv/dt. The integrated Miller clamp engages at VMCTA/B (~1.9 V), preventing false turn-on in both technologies without external components.
What safety certifications are pending for the SI82F99BCE-IS3R?
The SI82F99BCE-IS3R has pending safety certifications including UL 1577 (6000 VRMS, 1-minute), CSA 62368-1 (reinforced insulation), CSA 60601-1 (2 MOPP), VDE 60747-17 (reinforced insulation), and CQC GB4943.1. These reflect its 6 kVRMS isolation rating and are aligned with automotive and medical power system requirements. Certification test reports are expected Q3 2024; the SI82F99BCE-IS3R remains fully functional and qualified per AEC-Q100 Grade 1 regardless of pending status.
SI82F99BCE-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Number of Channels:
- -
- Voltage - Isolation:
- -
- Common Mode Transient Immunity (Min):
- -
- Propagation Delay tpLH / tpHL (Max):
- -
- Pulse Width Distortion (Max):
- -
- Rise / Fall Time (Typ):
- -
- Current - Output High, Low:
- -
- Current - Peak Output:
- -
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- -
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Approval Agency:
- -
SI82F99BCE-IS3R FAQ
1.How can I place an order for SI82F99BCE-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI82F99BCE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI82F99BCE-IS3R reliable?
The price and inventory of SI82F99BCE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99BCE-IS3R is usually 5 days.
3.What payment methods are accepted for SI82F99BCE-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99BCE-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI82F99BCE-IS3R?
SI82F99BCE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI82F99BCE-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI82F99BCE-IS3R?
For technical support, including SI82F99BCE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99BCE-IS3R requirements.
6.How does Aetrix verify that SI82F99BCE-IS3R is sourced from the original manufacturer or authorized distributors?
All SI82F99BCE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99BCE-IS3R meets industry standards.
7.What is the process for return or replacement of SI82F99BCE-IS3R?
All SI82F99BCE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99BCE-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI82F99BCE-IS3R part is unused and in its original packaging.
Return procedure for SI82F99BCE-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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