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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI82F99BEC-IS1R

Name: SI82F99BEC-IS1R
Brand: Skyworks Solutions Inc.
SKU: SI82F99BEC-IS1R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI82F99BEC-IS1R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: -

Datasheet:: SI82F99BEC-IS1R.pdf

Description:: 3.75 KV 2-CHANNEL ISOLATED SELVC

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Product details

Overview

SI82F99BEC-IS1R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, 6 kVRMS reinforced isolation, SelVCD™ current-source outputs (8-level programmable sourcing/sinking), integrated Miller clamp, and <5 ns channel-to-channel skew. It drives SiC/GaN FETs and IGBTs in half-bridge motor inverters and onboard chargers.

For engineers reviewing the SI82F99BEC-IS1R datasheet, SI82F99BEC-IS1R pinout, SI82F99BEC-IS1R application, or SI82F99BEC-IS1R equivalent, this page delivers verified specifications, SOIC-14 WB package mapping, truth-table–validated logic behavior, UVLO thresholds (12 V), and real-world dead time programming guidance using the DT pin resistor.

Technical Context

The SI82F99BEC-IS1R implements differential capacitive isolation using silicon dioxide barriers, enabling 200 kV/µs CMTI and stable timing across –40 to 125 °C. Its PWM-input architecture routes a single logic signal to both channels with complementary output behavior enforced by internal overlap protection.

Dead time is programmable via external resistor on DT pin (10–110 kΩ range), generating typical delays of 23–137 ns; connecting DT to VDDI disables dead time for universal dual-driver operation. The EN pin provides active-high functional enable with tEID < 100 ns recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	6 kVRMS for 1 minute - meets UL 1577, VDE 60747-17, and CSA 62368-1 reinforced insulation requirements.
Output Configuration	High-Side/Low-Side - VOA and VOB deliver complementary PWM-driven outputs with shoot-through prevention.
Input Logic	PWM-only with EN - single CMOS-compatible input controls both channels; EN enables/disables output state unconditionally.
Channel Skew	<5 ns - ensures precise timing alignment between high-side and low-side switching transitions.
UVLO Threshold	12 V (VDDA/B) - prevents erroneous turn-on during gate supply brownout; hysteresis supports clean startup/shutdown.
SelVCD™ Levels	8 discrete sourcing/sinking current settings - eliminates external gate resistors and enables dynamic speed control via SPD± pins.
CMTI	>200 kV/µs - maintains signal integrity in high-dV/dt environments like SiC-based inverters.

Pinout & Package

SI82F99BEC-IS1R uses a wide-body 14-pin SOIC (WB SOIC-14) package with 8.3 mm creepage and reinforced insulation barrier. Pin 1 is VIA (non-inverting input for Channel A); pin 9 is SPD− (sinking current programming); pin 12 is NC (no connection).

Pin/Terminal	Circuit Role	Design Meaning
VDDI	Logic input power supply	3–20 V supply for digital interface; powers internal isolator and logic; UVLO threshold at 12 V.
GNDI	Logic input ground	Reference for all digital inputs (PWM, EN, SPD±, DT); must be separated from power grounds.
PWM	Single logic input for both channels	Drives VOA high / VOB low when high; VOA low / VOB high when low - defines half-bridge complementarity.
EN	Active-high enable	When high, enables normal operation; when low, forces VOA and VOB low regardless of PWM state.
DT	Dead time programming input	Resistor to GND sets dead time (23–137 ns); connect to VDDI to disable dead time and overlap protection.
SPD+	Sourcing current control	Resistor to GND selects one of eight turn-on current levels; enables Miller clamp during VOH→VOL transition.
SPD−	Sinking current control	Resistor to GND selects one of eight turn-off current levels; activates enhanced sinking (SPD7−) during Miller clamp event.
VDDA	High-side gate driver supply	5–30 V supply for VOA output; UVLO triggers at 12 V to prevent weak drive during undervoltage.
GNDA	High-side gate driver ground	Return path for VOA; must be isolated from GNDB and GNDI; forms reinforced insulation barrier with VDDA.
VDDB	Low-side gate driver supply	5–30 V supply for VOB output; independent UVLO monitoring ensures safe low-side operation.
GNDB	Low-side gate driver ground	Return path for VOB; galvanically isolated from GNDA and GNDI; completes dual-supply gate drive loop.
VOA	High-side gate driver output	Current-source output with integrated Miller clamp; connects directly to high-side switch gate without series resistor.
VOB	Low-side gate driver output	Current-source output with integrated Miller clamp; connects directly to low-side switch gate; complements VOA.
NC	No connection	Pin 12 is unconnected die bond pad; must remain floating - no routing or PCB trace allowed.

Key Features

Feature	Design Value
Selectable Variable Current Drive (SelVCD™)	Eight discrete sourcing/sinking current levels per channel, set independently via SPD+ and SPD− resistors - replaces gate resistors and enables optimized dV/dt control.
Integrated Miller Clamp	Automatically engages when VOA/VOB falls below VMCTA/B (~2 V), switching sinking current to SPD7− level - suppresses Miller-induced false turn-on without external components.
Programmable Dead Time	Resistor-programmed delay (23–137 ns) between VOA and VOB transitions - prevents shoot-through in half-bridge topologies with adjustable timing precision.
Reinforced Isolation	6 kVRMS isolation rating with 1500 VRMS working voltage and 10 kV bipolar surge immunity - certified to UL, VDE, CSA, and CQC safety standards.
AEC-Q100 Qualified	Automotive-grade qualification (Grade 1, –40 to 125 °C) with zero unknown output states and guaranteed UVLO behavior - suitable for traction inverters and OBCs.

Applications

Motor Drives	Onboard Chargers (OBC)
Use Scenario: Driving SiC MOSFET half-bridges in 400 V/800 V EV traction inverters with >100 kHz switching frequency. IC Role / Device Role / Timing Role: High-Side/Low-Side isolated gate driver providing complementary PWM outputs with <5 ns skew and programmable dead time. Use Value: Enables fast, shoot-through–free switching of high-dV/dt SiC devices while maintaining 200 kV/µs noise immunity across isolation barrier.	Use Scenario: Controlling dual-phase interleaved LLC resonant converters in automotive bidirectional OBCs. IC Role / Device Role / Timing Role: Isolated PWM driver with 12 V UVLO and SelVCD™ for adaptive gate drive strength during AC/DC and DC/AC modes. Use Value: Eliminates gate resistor tuning across operating modes; Miller clamp prevents false turn-on during high-frequency ZVS transitions.
Power Inverters	Uninterruptible Power Supplies (UPS)
Use Scenario: Driving GaN HEMTs in three-phase solar microinverters requiring tight timing control and thermal robustness. IC Role / Device Role / Timing Role: Dual-channel isolated driver with EN-controlled fault shutdown and SPD±-programmed current matching for paralleled switches. Use Value: Ensures synchronized turn-on/turn-off across parallel GaN devices; integrated thermal protection avoids external sensing circuitry.	Use Scenario: Gate driving IGBT modules in double-conversion online UPS systems with strict reliability and safety certification requirements. IC Role / Device Role / Timing Role: Safety-certified isolated driver delivering 6 kVRMS reinforcement and AEC-Q100–level process robustness. Use Value: Meets UL 1577, VDE 60747-17, and CSA 62368-1 for reinforced insulation - reduces system-level certification effort and field failure risk.

Motor Drives

Onboard Chargers (OBC)

Use Scenario: Driving SiC MOSFET half-bridges in 400 V/800 V EV traction inverters with >100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-Side/Low-Side isolated gate driver providing complementary PWM outputs with <5 ns skew and programmable dead time.

Use Value: Enables fast, shoot-through–free switching of high-dV/dt SiC devices while maintaining 200 kV/µs noise immunity across isolation barrier.

Use Scenario: Controlling dual-phase interleaved LLC resonant converters in automotive bidirectional OBCs.

IC Role / Device Role / Timing Role: Isolated PWM driver with 12 V UVLO and SelVCD™ for adaptive gate drive strength during AC/DC and DC/AC modes.

Use Value: Eliminates gate resistor tuning across operating modes; Miller clamp prevents false turn-on during high-frequency ZVS transitions.

Power Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: Driving GaN HEMTs in three-phase solar microinverters requiring tight timing control and thermal robustness.

IC Role / Device Role / Timing Role: Dual-channel isolated driver with EN-controlled fault shutdown and SPD±-programmed current matching for paralleled switches.

Use Value: Ensures synchronized turn-on/turn-off across parallel GaN devices; integrated thermal protection avoids external sensing circuitry.

Use Scenario: Gate driving IGBT modules in double-conversion online UPS systems with strict reliability and safety certification requirements.

IC Role / Device Role / Timing Role: Safety-certified isolated driver delivering 6 kVRMS reinforcement and AEC-Q100–level process robustness.

Use Value: Meets UL 1577, VDE 60747-17, and CSA 62368-1 for reinforced insulation - reduces system-level certification effort and field failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8239BD-IS1R	Universal configuration (VIA/VIB inputs), no dead time logic; same SOIC-14 WB package and 6 kVRMS isolation.	Used where independent high-side/low-side control is required instead of complementary PWM-driven operation.	Select when needing non-complementary logic inputs or disabling dead time permanently - not drop-in for SI82F99BEC-IS1R's PWM/EN interface.
UCC5390SCDWR	Texas Instruments part with 5.7 kVRMS isolation, 100 V/ns CMTI, and fixed 4-A peak output; no SelVCD™ or SPD± programming.	Targeted at cost-sensitive industrial inverters where programmable drive strength is unnecessary.	Choose for simpler designs without dynamic gate current adjustment; requires external Miller clamp and gate resistors.

Compared with Si8239BD-IS1R and UCC5390SCDWR, SI82F99BEC-IS1R uniquely combines PWM-input simplicity, EN-based functional safety control, and 8-level SelVCD™ for adaptive gate drive - making it optimal for automotive OBCs and SiC traction inverters demanding both safety certification and layout efficiency.

Availability

SI82F99BEC-IS1R is available at Aetrix Electronics and suitable for motor drives, onboard chargers, power inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and reinforced isolation compliance.

Supply support for SI82F99BEC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and timing technologies.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in electric vehicle powertrain systems and industrial energy conversion, emphasizing safety certification, CMTI resilience, and programmable drive strength.

FAQ

What is the isolation voltage rating of the SI82F99BEC-IS1R?

The SI82F99BEC-IS1R has a safety-rated isolation voltage of 6 kVRMS for 1 minute, certified to UL 1577, VDE 60747-17, CSA 62368-1, and CQC GB4943.1 standards. Its working voltage is rated at 1500 VRMS, and it withstands 10 kV bipolar surge pulses - confirming suitability for reinforced insulation in automotive and industrial power systems.

Does the SI82F99BEC-IS1R support both high-side and low-side gate driving simultaneously?

Yes, the SI82F99BEC-IS1R is configured as a High-Side/Low-Side driver with complementary PWM-controlled outputs: VOA drives the high-side switch and VOB drives the low-side switch. Its internal logic enforces overlap protection and programmable dead time to prevent shoot-through, making it purpose-built for half-bridge topologies.

How is dead time programmed on the SI82F99BEC-IS1R?

Dead time is programmed using an external resistor (R_DT) connected between the DT pin and GNDI. R_DT values from 10 kΩ to 110 kΩ yield typical dead times of 23 ns to 137 ns per Equation 1 (t_DT = 1.73 × R_DT + 5.74). Connecting DT to VDDI disables dead time insertion and overlap protection, reconfiguring SI82F99BEC-IS1R as a dual independent driver.

What UVLO threshold does the SI82F99BEC-IS1R use for its gate supply rails?

The SI82F99BEC-IS1R uses a 12 V undervoltage lockout (UVLO) threshold on both VDDA and VDDB rails, with hysteresis to ensure clean startup and shutdown. This setting prevents weak gate drive during brownout conditions and is factory-configured - no external components are needed to set or adjust the UVLO level.

Can the SI82F99BEC-IS1R drive SiC and GaN power devices effectively?

Yes, the SI82F99BEC-IS1R is explicitly validated for SiC MOSFETs and GaN HEMTs. Its 200 kV/µs CMTI, <5 ns channel skew, SelVCD™ current-source outputs, and integrated Miller clamp eliminate gate resistor dependencies and suppress Miller-induced false turn-on - critical for high-speed, high-dV/dt switching in SiC/GaN-based inverters and OBCs.

SI82F99BEC-IS1R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: -

Number of Channels:: -

Voltage - Isolation:: -

Common Mode Transient Immunity (Min):: -

Propagation Delay tpLH / tpHL (Max):: -

Pulse Width Distortion (Max):: -

Rise / Fall Time (Typ):: -

Current - Output High, Low:: -

Current - Peak Output:: -

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: -

Grade:: -

Qualification:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

Approval Agency:: -

SI82F99BEC-IS1R FAQ

1.How can I place an order for SI82F99BEC-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99BEC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99BEC-IS1R reliable?

The price and inventory of SI82F99BEC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99BEC-IS1R is usually 5 days.

3.What payment methods are accepted for SI82F99BEC-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99BEC-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99BEC-IS1R?

SI82F99BEC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99BEC-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99BEC-IS1R?

For technical support, including SI82F99BEC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99BEC-IS1R requirements.

6.How does Aetrix verify that SI82F99BEC-IS1R is sourced from the original manufacturer or authorized distributors?

All SI82F99BEC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99BEC-IS1R meets industry standards.

7.What is the process for return or replacement of SI82F99BEC-IS1R?

All SI82F99BEC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99BEC-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99BEC-IS1R part is unused and in its original packaging.

Return procedure for SI82F99BEC-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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