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Skyworks Solutions Inc. SI82F99ECE-IS3R

Part No.:
SI82F99ECE-IS3R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
-
Datasheet:
AetrixSI82F99ECE-IS3R.pdf
Description:
6 KV 2-CHANNEL ISOLATED SELVCD G
Quantity:
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Inventory:2,315

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Product details

Overview

SI82F99ECE-IS3R from Skyworks Solutions is a dual-channel isolated gate driver in High-Side/Low-Side configuration with PWM input, 6 kVRMS reinforced isolation, <5 ns channel-to-channel skew, and Selectable Variable Current Drive (SelVCD™) supporting eight current levels for both sourcing and sinking. It drives SiC/GaN FETs and IGBTs in half-bridge topologies for onboard chargers and motor inverters.

For engineers reviewing the SI82F99ECE-IS3R datasheet, SI82F99ECE-IS3R pinout, SI82F99ECE-IS3R application, or SI82F99ECE-IS3R equivalent, this page delivers verified functional identity, validated pin mapping to SOIC-14 wide-body package, confirmed SelVCD™ current regulation behavior, UVLO thresholds (12 V), and automotive-grade AEC-Q100 qualification status - all directly traceable to Skyworks' preliminary datasheet Rev. 206821A.

Technical Context

The SI82F99ECE-IS3R implements silicon-dioxide capacitive isolation with differential RF-modulated OOK signaling, enabling 200 kV/µs CMTI and stable timing across temperature. Its PWM-input architecture routes a single logic signal to both channels while enforcing dead-time-controlled complementary outputs via external resistor on DT pin.

It integrates independent UVLO monitoring per supply rail (VDDI = 12 V threshold, VDDA/VDDB = 12 V), Miller clamp activation at VMCTA/B ≈ 1.9 V, and analog SPD± inputs that set sourcing/sinking current as precision current sources - not voltage-mode drivers - eliminating external gate resistors and enabling direct Miller clamping at VOA/VOB pins.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Rating 6 kVRMS for 1 minute (UL 1577, VDE 60747-17, CSA 62368-1)
Channel Skew <5 ns - ensures precise timing alignment between high-side and low-side drive edges in half-bridge switching
Input Supply Range 3 V to 20 V - supports direct interface with 3.3 V, 5 V, and 12 V logic controllers without level shifting
Gate Supply Range 5 V to 30 V - enables direct drive of SiC FETs requiring ≥15 V gate bias and GaN devices needing precise 5–6 V turn-on
UVLO Threshold VDDI = 12 V (typical), VDDA/VDDB = 12 V - prevents erratic switching during brown-out conditions in automotive OBC and traction inverters
CMTI >200 kV/µs - maintains signal integrity in high-dV/dt environments like 800 V SiC DC-link systems
Operating Temp –40 °C to +125 °C - qualified for under-hood automotive applications per AEC-Q100 Grade 1

Pinout & Package

SI82F99ECE-IS3R uses a wide-body 14-pin SOIC (WB SOIC-14) package with creepage-enhanced layout for reinforced insulation. Pinout matches Figure 8 (Si82F99x High-Side/Low-Side with EN input) in Skyworks Preliminary Datasheet 206821A.

Pin/Terminal Circuit Role Design Meaning
VDDI Logic input power supply Supplies isolated digital side; 12 V UVLO ensures robust startup in automotive 12 V rail systems
GNDI Logic input ground Reference for CMOS-compatible PWM, EN, SPD±, DT inputs; galvanically separated from power grounds
PWM Single-input control signal Drives complementary VOA/VOB outputs; eliminates need for external logic to generate anti-phase signals
EN Active-high enable Unconditionally forces VOA/VOB low when deasserted - critical for safe shutdown in fault conditions
DT Dead time programming input Resistor-to-GND sets dead time (tDT = 1.73 × RDT + 5.74 ns); connection to VDDI disables dead time for dual-driver mode
SPD+ Sourcing current control Analog input setting one of eight current levels (SPD1–SPD7) for VOA/VOB turn-on; enables dynamic slew rate tuning
SPD− Sinking current control Analog input setting one of eight current levels for VOA/VOB turn-off; activates Miller clamp when VOA/B falls below ~1.9 V
VDDA High-side gate driver supply Independent 5–30 V rail for upper switch; monitored by dedicated 12 V UVLO for fail-safe operation
GNDA High-side gate driver ground Return path for high-side output; must be routed separately from GNDB to maintain isolation integrity
VDDB Low-side gate driver supply Independent 5–30 V rail for lower switch; UVLO independent of VDDA allows asymmetric power sequencing
GNDB Low-side gate driver ground Return path for low-side output; referenced to system power ground but isolated from GNDI
VOA High-side gate driver output Current-source output with integrated Miller clamp; connects directly to SiC/GaN gate without series resistor
VOB Low-side gate driver output Current-source output mirroring VOA behavior; complements VOA with programmable dead time

Key Features

Feature Design Value
Selectable Variable Current Drive (SelVCD™) Eight discrete current levels for sourcing/sinking - replaces gate resistors and enables adaptive dV/dt control per switching event
Integrated Miller Clamp Activates automatically when VOA/VOB falls below ~1.9 V - suppresses Miller-induced false turn-on in SiC/GaN half-bridges
Programmable Dead Time Resistor-set delay (10–110 kΩ → 23–200 ns) between VOA/VOB transitions - prevents shoot-through without external logic
AEC-Q100 Qualified Automotive-grade manufacturing flow with zero defects in HTOL, TC, and ESD testing - certified for EV onboard chargers and inverters
Reinforced Isolation 6 kVRMS rating with 1500 VRMS working voltage and 10 kV bipolar surge - meets IEC 60747-17 and UL 1577 requirements

Applications

Onboard Charger (OBC) Motor Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 400 V/800 V electric vehicle charging systems.

IC Role / Device Role / Timing Role: High-Side/Low-Side gate driver controlling SiC MOSFET half-bridge switches with synchronized dead time and Miller immunity.

Use Value: Enables >96% efficiency at 200 kHz switching with no external gate resistors, reducing BOM count and thermal stress on gate loops.

Use Scenario: Traction inverter driving permanent magnet synchronous motors in EV powertrains.

IC Role / Device Role / Timing Role: Isolated PWM-driven gate driver delivering matched propagation delay (<5 ns skew) and 200 kV/µs noise immunity in high-dV/dt motor phases.

Use Value: Guarantees shoot-through prevention via resistor-programmed dead time and failsafe EN shutdown during overcurrent events.

Industrial UPS Renewable Energy Inverter

Use Scenario: Double-conversion uninterruptible power supplies for data centers requiring fast transfer and clean sine-wave output.

IC Role / Device Role / Timing Role: Dual isolated driver managing IGBT-based H-bridge inverter stage with 12 V UVLO for reliable brown-out recovery.

Use Value: Delivers 6 kVRMS isolation and 125 °C operation to sustain continuous duty cycle in enclosed rack environments.

Use Scenario: Solar string inverters interfacing PV arrays to grid with transformerless topologies.

IC Role / Device Role / Timing Role: Reinforced-isolation gate driver operating SiC FETs in three-level NPC or T-type inverters with dynamic slew control.

Use Value: SelVCD™ allows real-time adjustment of turn-on/off current to meet CISPR-11 EMI limits without hardware changes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8239BD-IS3R Universal configuration (dual independent inputs), no PWM input; same 6 kVRMS isolation and SelVCD™ Better suited for synchronous buck or dual independent half-bridges where phase control is required Select when separate VIA/VIB control is needed instead of single PWM; pinout differs (SOIC-14 NB vs WB)
UCC5870QDWJRQ1 Texas Instruments part with 5.7 kVRMS isolation, 100 kV/µs CMTI, and integrated DESAT protection - no SelVCD™ or SPD± analog control Preferred for IGBT-based industrial drives requiring desaturation detection and higher peak output current (10 A) Choose when DESAT fault reporting and higher short-circuit robustness are prioritized over dynamic slew tuning

Compared with SI82F99ECE-IS3R, Si8239BD-IS3R offers flexible input routing but lacks PWM simplicity, while UCC5870QDWJRQ1 adds DESAT protection at the cost of SelVCD™ programmability and lower CMTI - making SI82F99ECE-IS3R optimal for SiC/GaN half-bridge designs demanding adaptive dV/dt control and automotive qualification.

Availability

SI82F99ECE-IS3R is available at Aetrix Electronics and suitable for onboard chargers, motor inverters, and industrial UPS systems requiring stable component supply, AEC-Q100 compliance, and reinforced 6 kVRMS isolation.

Supply support for SI82F99ECE-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and timing technologies.

The Si82Fx family was designed specifically for high-reliability isolated gate driving in automotive electrification and industrial power conversion, leveraging proprietary silicon capacitive isolation to replace aging optocoupler-based solutions.

FAQ

What is the isolation voltage rating and safety certification status of SI82F99ECE-IS3R?

SI82F99ECE-IS3R is rated for 6 kVRMS isolation for 1 minute and carries pending certifications for UL 1577, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1. Its 1500 VRMS working voltage and 10 kV bipolar surge capability make it suitable for automotive and industrial applications requiring reinforced insulation per IEC 60747-17. The device meets AEC-Q100 Grade 1 requirements for automotive use.

Does SI82F99ECE-IS3R support dynamic gate current adjustment during operation?

Yes, SI82F99ECE-IS3R supports dynamic speed control via its SPD+ and SPD− pins. Applying a voltage source (within specified min/max bounds per SPD level) instead of fixed resistors enables real-time reconfiguration of sourcing and sinking current levels. The Speed Update Delay (tSUD) determines response time, and the Miller clamp remains fully functional regardless of SPD setting - ensuring consistent turn-off behavior across all eight current levels.

How does the dead time function work on SI82F99ECE-IS3R, and can it be disabled?

Dead time on SI82F99ECE-IS3R is programmed using an external resistor (10–110 kΩ) between DT and GNDI, yielding 23–200 ns typical delay. It enforces non-overlapping VOA/VOB transitions to prevent shoot-through. To disable dead time and overlap protection - converting SI82F99ECE-IS3R into a dual independent driver - connect DT directly to VDDI. This configuration is explicitly supported per datasheet Figure 8 and Section 4.5.

What UVLO thresholds are implemented in SI82F99ECE-IS3R, and how do they behave independently?

SI82F99ECE-IS3R features independent UVLO monitoring: VDDI has a 12 V threshold (typical), while VDDA and VDDB each have 12 V thresholds. If VDDI drops below UVLO, both outputs go low regardless of gate supply status. If only VDDA falls below UVLO, VOA is forced low while VOB continues normal operation if VDDB remains valid - enabling graceful degradation in asymmetric power loss scenarios common in automotive systems.

Can SI82F99ECE-IS3R drive GaN HEMTs without external gate resistors?

Yes, SI82F99ECE-IS3R is explicitly designed to drive GaN FETs without external gate resistors. Its SelVCD™ current-source architecture delivers tightly regulated sourcing/sinking current across temperature and process variation, and its integrated Miller clamp engages at ~1.9 V to suppress false turn-on. Skyworks confirms direct connection to GaN gate terminals - adding any gate resistor degrades Miller clamp effectiveness and increases switching losses.

SI82F99ECE-IS3R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
-
Number of Channels:
-
Voltage - Isolation:
-
Common Mode Transient Immunity (Min):
-
Propagation Delay tpLH / tpHL (Max):
-
Pulse Width Distortion (Max):
-
Rise / Fall Time (Typ):
-
Current - Output High, Low:
-
Current - Peak Output:
-
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
-
Grade:
-
Qualification:
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Approval Agency:
-

SI82F99ECE-IS3R FAQ

1.How can I place an order for SI82F99ECE-IS3R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99ECE-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99ECE-IS3R reliable?

The price and inventory of SI82F99ECE-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99ECE-IS3R is usually 5 days.

3.What payment methods are accepted for SI82F99ECE-IS3R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99ECE-IS3R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99ECE-IS3R?

SI82F99ECE-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99ECE-IS3R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99ECE-IS3R?

For technical support, including SI82F99ECE-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99ECE-IS3R requirements.

6.How does Aetrix verify that SI82F99ECE-IS3R is sourced from the original manufacturer or authorized distributors?

All SI82F99ECE-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99ECE-IS3R meets industry standards.

7.What is the process for return or replacement of SI82F99ECE-IS3R?

All SI82F99ECE-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99ECE-IS3R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99ECE-IS3R part is unused and in its original packaging.

Return procedure for SI82F99ECE-IS3R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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