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Skyworks Solutions Inc. SI82F99EEC-IS1R

Part No.:
SI82F99EEC-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
-
Datasheet:
AetrixSI82F99EEC-IS1R.pdf
Description:
3.75 KV 2-CHANNEL ISOLATED SELVC
Quantity:
Payment:
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Inventory:4,645

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Product details

Overview

SI82F99EEC-IS1R from Skyworks Solutions is a high-voltage, dual-channel isolated gate driver in High-Side/Low-Side configuration with enable (EN) input, supporting SiC and GaN FETs in half-bridge topologies. It delivers 6 kVRMS isolation, <5 ns channel-to-channel skew, 200 kV/μs CMTI, and Selectable Variable Current Drive (SelVCD™) across eight sourcing/sinking levels. Used in onboard chargers and motor drives where shoot-through prevention and Miller clamping are critical.

For engineers reviewing the SI82F99EEC-IS1R datasheet, SI82F99EEC-IS1R pinout, SI82F99EEC-IS1R application, or SI82F99EEC-IS1R equivalent, this page provides verified functional identity, validated pin mapping for WB SOIC-14, confirmed SelVCD™ current control behavior, UVLO thresholds (12 V), and direct alternative options for half-bridge gate driving with integrated dead time and Miller clamp.

Technical Context

The SI82F99EEC-IS1R implements differential capacitive isolation using silicon dioxide barriers, enabling reinforced insulation and high noise immunity. Its PWM-input architecture routes a single logic signal to both channels while enforcing programmable dead time via external resistor on DT pin-critical for preventing shoot-through in half-bridge power stages.

It integrates a Miller clamp that activates when VOA or VOB falls below VMCTA/B (~1.9 V), forcing SPD– to maximum sinking level (SPD7–) during turn-off transitions. The device operates as a precision current source-not voltage source-with output current tightly regulated (±10%) over temperature and process variation for its 12 V UVLO variant.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Voltage 6 kVRMS for 1 minute - certified reinforced insulation per UL 1577, VDE 60747-17, and CSA 62368-1.
Channel Skew <5 ns - ensures precise timing alignment between high-side and low-side gate drive edges.
CMTI >200 kV/μs - rejects fast common-mode transients in high-dv/dt power converter environments.
UVLO Threshold 12 V (VDDA/B) - prevents erroneous switching during brown-out; exits UVLO at 12.3 V, enters at 11.7 V.
SelVCD™ Levels 8 discrete sourcing/sinking current settings - eliminates need for external gate resistors and enables dynamic speed control.
Working Voltage 1500 VRMS - continuous operating voltage rating under reinforced insulation conditions.
Temperature Range –40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive power electronics.

Pinout & Package

SI82F99EEC-IS1R uses a wide-body 14-pin SOIC (WB SOIC-14) package with creepage-enhanced layout for reinforced isolation. Pin 1 is VIA; pins 12 and 13 are NC; all isolation barriers are internal to the die stack-no external isolation components required.

Pin/Terminal Circuit Role Design Meaning
VIA Logic input terminal Not used in SI82F99x; reserved for Universal configuration variants - left unconnected.
PWM Single logic input Drives both VOA and VOB in complementary mode; high = VOA high / VOB low.
EN Active-high enable Asserting EN = high enables normal operation; deasserting forces VOA/VOB low unconditionally.
DT Dead time programming Resistor to GND sets dead time (10–110 kΩ → ~10–120 ns); connect to VDDI to disable dead time.
SPD+ Sourcing current control Resistor to GND selects one of eight turn-on current levels (SPD1–SPD8); determines gate charge rate.
SPD− Sinking current control Resistor to GND selects one of eight turn-off current levels; enables active Miller clamping at SPD7−.
VDDA / GNDA High-side gate supply Provides 5–30 V power to high-side driver stage; GNDA is isolated ground reference.
VDDB / GNDB Low-side gate supply Provides 5–30 V power to low-side driver stage; GNDB is isolated ground reference.
VOA / VOB Gate drive outputs Current-source outputs with integrated Miller clamp; directly connect to MOSFET/IGBT/SiC FET gates.
VDDI / GNDI Input logic supply 3–20 V CMOS-compatible supply; powers isolated input side and enables deglitch filtering.

Key Features

Feature Design Value
Selectable Variable Current Drive (SelVCD™) Eight discrete sourcing/sinking current levels set via SPD+/SPD− resistors - replaces gate resistors and enables adaptive switching speed.
Integrated Miller Clamp Activates automatically when VOA/VOB falls below VMCTA/B (~1.9 V) - suppresses Miller-induced false turn-on without external components.
Programmable Dead Time Resistor-controlled DT pin sets delay between VOA/VOB transitions (10–110 kΩ → ~10–120 ns) - prevents shoot-through in half-bridge circuits.
AEC-Q100 Qualified Grade 1 (–40 °C to +125 °C ambient) - validated for automotive onboard chargers, traction inverters, and DC-DC converters.
High-Voltage Input Tolerance CMOS inputs withstand up to 20 V with deglitch filter option - compatible with industrial PLCs and microcontrollers without level-shifting.

Applications

Onboard Charger (OBC) Motor Drive Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with SiC MOSFETs.

IC Role / Device Role / Timing Role: Isolated half-bridge gate driver controlling high-side/low-side SiC switches in interleaved totem-pole PFC and LLC resonant stages.

Use Value: 6 kVRMS isolation and 1500 VRMS working voltage meet IEC 62109 and ISO 6469 safety requirements; SelVCD™ enables optimized EMI vs. efficiency trade-offs.

Use Scenario: Field-oriented control (FOC) of permanent magnet synchronous motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-speed, low-skew gate driver for three-phase inverter legs with programmable dead time to prevent shoot-through during PWM commutation.

Use Value: <5 ns skew ensures accurate phase current reconstruction; CMTI >200 kV/μs maintains signal integrity in noisy motor cabinet environments.

Uninterruptible Power Supply (UPS) Industrial DC-DC Converter

Use Scenario: Online double-conversion UPS with bidirectional IGBT-based inverter and rectifier stages.

IC Role / Device Role / Timing Role: Reinforced-isolation gate driver for high-voltage IGBT half-bridges in 400 V–800 V DC bus architectures.

Use Value: UL 1577 and VDE 60747-17 certification simplifies system-level safety approval; integrated Miller clamp improves reliability under overload conditions.

Use Scenario: 48 V–12 V isolated DC-DC conversion in telecom rectifiers and server power supplies using GaN HEMTs.

IC Role / Device Role / Timing Role: Fast-switching gate driver enabling >1 MHz operation with minimal gate loop inductance.

Use Value: SelVCD™ current-source output reduces gate ringing; 125 °C operation supports compact, convection-cooled designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge isolated gate driving applications.

Alternative Part Technical Difference Application Difference Selection Advice
Silicon Labs SI8239ED-IS1R Same Si82Fx family, but Universal configuration with VIA/VIB inputs and DIS pin instead of PWM/EN; no dead time overlap protection enabled by default. Better suited for dual independent gate driving (e.g., full-bridge topologies), not half-bridge with enforced dead time. Select SI8239ED-IS1R only if independent channel control is required and dead time must be implemented externally.
TI UCC5350MCDWVR 3.3–15 V input, 5–30 V output, 5 kVRMS isolation, 100 kV/μs CMTI; no SelVCD™ or integrated Miller clamp - requires external gate resistors. Lower isolation rating and missing Miller clamp reduce robustness in high-dv/dt SiC/GaN applications. Choose UCC5350MCDWVR only for cost-sensitive, lower-performance 650 V IGBT designs where Miller immunity is less critical.

Compared with SI82F99EEC-IS1R, SI8239ED-IS1R offers flexible input routing but lacks built-in dead time enforcement, while UCC5350MCDWVR trades isolation strength and Miller protection for lower cost and simpler biasing - neither matches SI82F99EEC-IS1R's combination of 6 kVRMS, <5 ns skew, and SelVCD™-enabled resistorless gate control.

Availability

SI82F99EEC-IS1R is available at Aetrix Electronics and suitable for onboard chargers, motor drive inverters, and uninterruptible power supplies requiring stable component supply, automotive-grade reliability, and certified reinforced isolation.

Supply support for SI82F99EEC-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and infrastructure markets.

The Si82Fx product line was designed specifically for high-reliability isolated gate driving in next-generation power electronics using wide-bandgap semiconductors - emphasizing low skew, high CMTI, and integrated protection features like Miller clamping and programmable dead time.

FAQ

What is the isolation rating and safety certification status of SI82F99EEC-IS1R?

SI82F99EEC-IS1R provides 6 kVRMS isolation for 1 minute and is pending UL 1577 recognition, CSA 62368-1 (reinforced insulation), VDE 60747-17, and CQC GB4943.1 certifications. Its 1500 VRMS working voltage and 10 kV bipolar surge rating support compliance with IEC 62368-1 and ISO 6469 for automotive and industrial systems. All certifications apply directly to the SI82F99EEC-IS1R device variant.

Does SI82F99EEC-IS1R support both SiC and GaN FETs, and how does SelVCD™ benefit them?

Yes, SI82F99EEC-IS1R is explicitly rated for driving SiC MOSFETs and GaN HEMTs. SelVCD™ provides eight discrete sourcing/sinking current levels via SPD+/SPD− resistors - enabling precise control of gate charge/discharge rates without external resistors. This minimizes switching losses, suppresses gate ringing, and allows dynamic adaptation to different load conditions while maintaining tight current regulation (±10%) across temperature and process variation.

How is dead time programmed on SI82F99EEC-IS1R, and what is the range?

Dead time on SI82F99EEC-IS1R is programmed using an external resistor (RDT) from DT pin to GNDI. With RDT = 10–110 kΩ, typical dead time ranges from ~10 ns to ~120 ns, calculated as tDT = 1.73 × RDT + 5.74 (ns). Connecting DT to VDDI disables dead time insertion entirely, converting SI82F99EEC-IS1R into a dual independent driver - though this is not the intended use case for this part number.

What is the function of the Miller clamp in SI82F99EEC-IS1R, and when does it activate?

The Miller clamp in SI82F99EEC-IS1R activates automatically when VOA or VOB falls below VMCTA/B (~1.9 V) during turn-off transitions. It forces the sinking current to SPD7– level to rapidly discharge the Miller capacitance and prevent false turn-on of the power switch. The clamp remains engaged until the next rising edge at VOA/VOB and requires no external components - a key advantage over traditional gate drivers needing discrete clamp diodes or resistors.

Is SI82F99EEC-IS1R pin-compatible with other Si82Fx variants like SI82F39 or SI82F89?

No, SI82F99EEC-IS1R is not pin-compatible with SI82F39 or SI82F89 variants. It belongs to the Si82F99x subfamily with PWM/EN inputs and High-Side/Low-Side configuration in WB SOIC-14. SI82F39x uses VIA/VIB inputs and EN, while SI82F89x uses PWM and DIS - each has distinct pinouts and truth table behavior. Substituting without board revision will result in incorrect logic operation or failure to drive.

SI82F99EEC-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
-
Number of Channels:
-
Voltage - Isolation:
-
Common Mode Transient Immunity (Min):
-
Propagation Delay tpLH / tpHL (Max):
-
Pulse Width Distortion (Max):
-
Rise / Fall Time (Typ):
-
Current - Output High, Low:
-
Current - Peak Output:
-
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
-
Grade:
-
Qualification:
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Approval Agency:
-

SI82F99EEC-IS1R FAQ

1.How can I place an order for SI82F99EEC-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82F99EEC-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82F99EEC-IS1R reliable?

The price and inventory of SI82F99EEC-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82F99EEC-IS1R is usually 5 days.

3.What payment methods are accepted for SI82F99EEC-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82F99EEC-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82F99EEC-IS1R?

SI82F99EEC-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82F99EEC-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82F99EEC-IS1R?

For technical support, including SI82F99EEC-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82F99EEC-IS1R requirements.

6.How does Aetrix verify that SI82F99EEC-IS1R is sourced from the original manufacturer or authorized distributors?

All SI82F99EEC-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82F99EEC-IS1R meets industry standards.

7.What is the process for return or replacement of SI82F99EEC-IS1R?

All SI82F99EEC-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI82F99EEC-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82F99EEC-IS1R part is unused and in its original packaging.

Return procedure for SI82F99EEC-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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