Skyworks Solutions Inc. SI8752AB-AS

Overview

SI8752AB-AS from Skyworks Solutions is an automotive-grade isolated FET driver with diode-emulator input, designed to replace mechanical relays and optocoupler-based SSRs. It delivers 10 V gate drive with ≤1 mA input current, achieves 82 μs turn-on time at 30 mA input, features Active Miller Clamp, and operates across –40 to +125 °C. It enables custom solid-state relay designs for AC/DC load switching in EV charging and battery monitoring systems.

For engineers reviewing the SI8752AB-AS datasheet, SI8752AB-AS pinout, SI8752AB-AS application, or SI8752AB-AS equivalent, this page provides verified specifications, SOIC-8 package details, automotive AEC-Q100 qualification, 2.5 kVrms isolation rating, and real-world SSR replacement use cases - all confirmed from Skyworks' official Si8751/52 datasheet (Rev. A, July 2022).

Technical Context

The SI8752AB-AS uses RF-based CMOS isolation to transmit signal and power across a semiconductor barrier, eliminating need for external isolated supply. Its diode-emulator input (ANODE/CATHODE) accepts 1–30 mA forward current to modulate gate drive strength and switching speed.

It integrates dual Miller clamp inputs (MCAP1/MCAP2) that activate internal low-impedance gate-source paths when dV/dt exceeds threshold, preventing unintended FET turn-on in high-noise AC switching. Output stage drives external N-channel FETs with programmable VG(ON) from 8–13 V depending on input current.

Key Specifications

Pinout & Package

SI8752AB-AS is housed in a ROHS-compliant 8-pin narrow-body SOIC package (5.00 × 4.00 mm footprint, 1.27 mm pitch), with creepage/clearance margins exceeding IEC 60664-1 requirements for reinforced insulation up to 125 VRMS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated FET driver applications.

Compared with SI8752AB-IS, the SI8752AB-AS adds automotive temperature range and AEC-Q100 qualification without changing footprint or function; versus ADUM4122BRWZ, it trades higher peak current for self-powered simplicity and direct optocoupler drop-in capability in SSR designs.

Availability

SI8752AB-AS is available at Aetrix Electronics and suitable for automotive charging, battery monitoring, and HVAC relay replacement requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SI8752AB-AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The SI875x family was developed to enable next-generation solid-state relays by integrating RF-based isolation, self-powered gate drive, and diode-emulator/digital inputs - targeting automotive, industrial, and energy infrastructure applications demanding reliability and space efficiency.

FAQ

What is the primary function of the SI8752AB-AS?

The SI8752AB-AS is an isolated FET driver with diode-emulator input, designed to replace optocouplers and mechanical relays in solid-state relay (SSR) implementations. It generates its own isolated gate drive voltage (up to 13 V) to control external N-channel FETs, supporting both AC and DC load switching. Its core function is to provide robust galvanic isolation while simplifying power architecture - eliminating the need for external isolated supplies in SSR designs. The SI8752AB-AS specifically uses ANODE/CATHODE terminals to emulate LED input behavior, making it compatible with legacy PLC and microcontroller outputs.

Does the SI8752AB-AS require an external isolated power supply?

No, the SI8752AB-AS does not require an external isolated power supply. It uses RF-based CMOS isolation to transmit both signal and power across the barrier, generating its own secondary-side gate drive voltage internally. This self-contained power architecture allows the SI8752AB-AS to deliver up to 13 V at the GATE pin referenced to the SOURCE pin - sufficient to fully enhance standard logic-level N-channel FETs - without any auxiliary isolated DC/DC converter. This feature directly reduces system BOM count, PCB area, and design complexity compared to traditional isolated gate drivers.

How does the Miller Clamp feature work in the SI8752AB-AS?

The SI8752AB-AS includes two dedicated Miller clamp inputs (MCAP1 and MCAP2) that detect rapid voltage transients (dV/dt) on the drain of the external FET. When a positive-going edge exceeds threshold, the internal clamp activates a low-impedance path between GATE and SOURCE, rapidly discharging the gate and preventing unintended turn-on. This is especially critical in AC switching applications using back-to-back FETs, where one FET's drain sees full line voltage swing. A 10–100 pF capacitor connects each FET drain to its respective MCAP pin - the SI8752AB-AS draws up to 6 mA during clamping to ensure fast, reliable suppression of inductive chatter.

What certifications apply to the SI8752AB-AS?

The SI8752AB-AS is certified to UL1577 (2500 VRMS isolation), VDE 0884-10 (630 V_peak working voltage), CSA C22.2 No. 60950-1 (125 VRMS reinforced insulation), and CQC GB4943.1. All certifications apply to its 2.5 kVrms isolation rating, with production units tested to 3.0 kVrms for 1 second. It is also qualified to AEC-Q100 Grade 1, covering temperature cycling, HTOL, ESD (HBM 3500 V), and EMC stress - confirming suitability for automotive under-hood and charging applications where safety, longevity, and regulatory compliance are mandatory.

Can the SI8752AB-AS drive both AC and DC loads?

Yes, the SI8752AB-AS supports both AC and DC load configurations. For DC loads, it drives a single N-channel FET with SOURCE tied to system ground or low-side return. For AC loads, it drives two N-channel FETs in series (back-to-back), with MCAP1 and MCAP2 independently protecting each FET's gate against dV/dt-induced turn-on. The GATE output delivers 10.3 V typical at 1 mA input - enough to fully enhance logic-level FETs - and the device's 2.5 kVrms isolation and 20 kV/μs CMTI ensure reliable operation in mains-connected applications like HVAC relays and EV charging disconnect switches.